JPS6320861A - Lead frame - Google Patents

Lead frame

Info

Publication number
JPS6320861A
JPS6320861A JP61165923A JP16592386A JPS6320861A JP S6320861 A JPS6320861 A JP S6320861A JP 61165923 A JP61165923 A JP 61165923A JP 16592386 A JP16592386 A JP 16592386A JP S6320861 A JPS6320861 A JP S6320861A
Authority
JP
Japan
Prior art keywords
semiconductor pellet
external lead
loading section
element loading
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61165923A
Other languages
Japanese (ja)
Inventor
Yasushi Araoka
荒岡 慶志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC IC Microcomputer Systems Co Ltd
Original Assignee
NEC IC Microcomputer Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC IC Microcomputer Systems Co Ltd filed Critical NEC IC Microcomputer Systems Co Ltd
Priority to JP61165923A priority Critical patent/JPS6320861A/en
Publication of JPS6320861A publication Critical patent/JPS6320861A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To eliminate the need for the setting of a lower limit in the dimensions of a semiconductor pellet usable to the dimensions of an element loading section by forming an arcuate bent section to the nose of an external lead and forming a rectilinear shape hardly having excess length when completing a wiring process. CONSTITUTION:A lead frame contains an element loading section 1, on which a semiconductor pellet 1 is loaded, and an external lead 3 with a bent section 4, a nose of which is bent upward in an arcuate manner to the surface of the element loading section 1. The semiconductor pellet 2 is fixed to the element loading section 1, and an electrode for the semiconductor pellet 2 and the external lead 3 are connected by a metallic small-gage wire 5, pushing the external lead 3 by a crossarm 6. The metallic small-gage wire 5 is wired in the arcuate manner with excess length at that time. The external lead 3 is returned to an original shape by removing the crossarm 6, and the metallic small-gage wire 5 is formed to an approximately rectilinear shape hardly having excess length. Accordingly, even when the dimensions of the semiconductor pellet 2 are scaled down sufficiently to the element loading section 1, a contact with the element loading section 1 of the metallic small-gage wire 5 can be prevented when the pressure of a resin is applied in a resin seal process.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はリードフレームに関し、特に樹脂封止形の半導
体装置の製造に用いるリードフレームに関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a lead frame, and particularly to a lead frame used for manufacturing a resin-sealed semiconductor device.

〔従来の技術〕[Conventional technology]

従来、この種のリードフレームは、第3図(a)及び(
b)に示すように、半導体ベレ・ント2が搭載される素
子搭載部1と、素子搭載部1の面と平行した面を接続の
ための面とする外部り一ド3′とを有している。
Conventionally, this type of lead frame is shown in FIGS. 3(a) and (
As shown in b), it has an element mounting part 1 on which a semiconductor beam 2 is mounted, and an external lead 3' whose surface for connection is parallel to the surface of the element mounting part 1. ing.

このようなリードフレームを用いて半導体装置の組立て
を行う場合は、半導体ベレット2上の電極と外部リード
3′との間を金属細線5′を用いて、ワイヤボンディン
グにより接続している。
When assembling a semiconductor device using such a lead frame, the electrodes on the semiconductor pellet 2 and the external leads 3' are connected by wire bonding using thin metal wires 5'.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来のリードフレームは、外部リードと半導体
ペレットを接続している金属細線は余長をもって弧を描
くように配線されているので、素子搭載部に対し半導体
ベレットの金属細線に平行する辺長が十分に小さくなる
と金属細線が長くなり、樹脂封止時の樹脂の圧力によっ
て金属細線と素子搭載部とが接触することがある。
In the conventional lead frame described above, the thin metal wires connecting the external leads and the semiconductor pellet are wired in an arc with extra length, so the length of the side parallel to the thin metal wires of the semiconductor pellet with respect to the element mounting area is If it becomes small enough, the thin metal wire becomes long, and the thin metal wire may come into contact with the element mounting portion due to the pressure of the resin during resin sealing.

それ故、素子搭載部の大きさに対し、使用できる半導体
ペレットの大きさに下限が生じるという問題点がある。
Therefore, there is a problem that there is a lower limit to the size of the semiconductor pellet that can be used with respect to the size of the element mounting portion.

本発明の目的は、使用できる半導体ペレットの大きさに
下限の生じないリードフレームを提供することにある。
An object of the present invention is to provide a lead frame in which there is no lower limit to the size of semiconductor pellets that can be used.

〔問題点を解決するための手段〕[Means for solving problems]

本発明のリードフレームは、半導体ペレットを搭載する
素子搭載部と、該素子搭載部の面に対し先端が上方に円
弧状に形成される外部リードとを有している。
The lead frame of the present invention has an element mounting part on which a semiconductor pellet is mounted, and an external lead whose tip is formed in an arcuate shape upward with respect to the surface of the element mounting part.

〔実施例〕〔Example〕

次に、本発明の実施例について図面を参照して説明する
Next, embodiments of the present invention will be described with reference to the drawings.

第1図(a)及び(b)はそれぞれ本発明の一実施例の
平面図及びA−A’線断面図である。
FIGS. 1(a) and 1(b) are a plan view and a sectional view taken along the line AA' of an embodiment of the present invention, respectively.

第1図(a)及び(b)に示すように、半導体ペレット
23搭載する素子搭載部1と、素子搭載部1の面に対し
先端が上方に円弧状に曲げられた曲げ部4を有する外部
リード3とを含む。
As shown in FIGS. 1(a) and 1(b), an external part has an element mounting part 1 on which a semiconductor pellet 23 is mounted, and a bent part 4 whose tip is bent upward into an arc shape with respect to the surface of the element mounting part 1. Lead 3 is included.

半導体ペレット2の電極と外部リード3とはワイヤボン
ディングにより金属細線5で接続される。
The electrode of the semiconductor pellet 2 and the external lead 3 are connected by a thin metal wire 5 by wire bonding.

次に、第2図(a)及び(b)は第1図(a>及び(b
)のリードフレームを用いたワイヤボンディング工程を
工程順に示した半導体ペレットの断面図である。
Next, Figures 2 (a) and (b) are similar to Figure 1 (a> and (b).
) is a cross-sectional view of a semiconductor pellet showing the wire bonding process using a lead frame in order of process.

第2図(a)に示すように、半導体ペレット2を素子搭
載部1に固定し、外部リード3を押え金6で矢印Bの方
向から押圧し、外部リード3の表面を平らにする。
As shown in FIG. 2(a), the semiconductor pellet 2 is fixed to the element mounting portion 1, and the external lead 3 is pressed with a presser foot 6 in the direction of arrow B to flatten the surface of the external lead 3.

次に、第2図(b)に示すように、押え金6で押付けな
らが、半導体ペレット2の電極と外部リード3とを金属
細線5で接続する。この時は、金属細線5は余長をもっ
て円弧状に配線されている。
Next, as shown in FIG. 2(b), while pressing with a presser foot 6, the electrode of the semiconductor pellet 2 and the external lead 3 are connected with a thin metal wire 5. At this time, the thin metal wire 5 is wired in an arc shape with an extra length.

次に、押え金6を取除くことにより、外部り−ド3は元
の形状に戻り、金属細線5は、第1図(1))に示すよ
うに、余長の少いほぼ直線状になる。
Next, by removing the presser foot 6, the outer wire 3 returns to its original shape, and the thin metal wire 5 becomes almost straight with little extra length, as shown in FIG. 1 (1)). Become.

従って、素子搭載部1に対し半導体ペレット2の大きさ
が十分小さくなっても、樹脂封止工程で樹脂の圧力が加
わった時、金属細線5が素子搭載部1に接触することを
防止できる。
Therefore, even if the size of the semiconductor pellet 2 is sufficiently small relative to the element mounting part 1, the thin metal wire 5 can be prevented from coming into contact with the element mounting part 1 when resin pressure is applied in the resin sealing process.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明のリードフレームは、外部リ
ードの先端に円弧状の曲げ部を設けて半導体ペレットと
外部リードを接続する金属細線を配線工程完了時に余長
の少い直線状とすることにより、金属細線と素子搭載部
が接触することを防止できるので、素子搭載部の大きさ
に対して使用可能な半導体ペレットの大きさに下限を設
定することを要せず、生産性を向上できるという効果が
ある。
As explained above, in the lead frame of the present invention, an arcuate bent portion is provided at the tip of the external lead so that the thin metal wire connecting the semiconductor pellet and the external lead is formed into a straight line with little extra length when the wiring process is completed. This prevents the thin metal wire from coming into contact with the element mounting area, so it is not necessary to set a lower limit on the size of the semiconductor pellet that can be used relative to the size of the element mounting area, and productivity can be improved. There is an effect.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a>及び(b)はそれぞれ本発明の一実施例の
平面図及びA−A’線断面図、第2図(a>及び(b)
はそれぞれ第1図(早)及び(l〕)のリードフレーム
を用いたワイヤボンディング工程を工程順に示した半導
体ペレットの断面図、第3図(a)及び(b)はそれぞ
れ従来のリードフレームの一例の平面図及びc−c’線
断面図である。 1・・・素子搭載部、2・・・半導体ペレット、3.3
′・・・外部リード、4・・・曲げ部、5.5′・・・
金属オ 第1図 第2図
Figures 1 (a> and (b) are a plan view and a sectional view taken along the line A-A' of an embodiment of the present invention, respectively, and Figures 2 (a> and (b) are
are cross-sectional views of a semiconductor pellet showing the wire bonding process using the lead frame shown in Fig. 1 (early) and (l) in order of process, respectively, and Fig. 3 (a) and (b) are cross-sectional views of the wire bonding process using the lead frame of the conventional lead frame, respectively. FIG. 2 is a plan view and a cross-sectional view taken along line cc' of an example. 1... Element mounting part, 2... Semiconductor pellet, 3.3
'...External lead, 4...Bent part, 5.5'...
Metal O Figure 1 Figure 2

Claims (1)

【特許請求の範囲】[Claims] 半導体ペレットを搭載する素子搭載部と、該素子搭載部
の面に対し先端が上方に円弧状に形成される外部リード
とを有するリードフレーム。
A lead frame having an element mounting part on which a semiconductor pellet is mounted, and an external lead whose tip is formed in an arc shape upward with respect to the surface of the element mounting part.
JP61165923A 1986-07-14 1986-07-14 Lead frame Pending JPS6320861A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61165923A JPS6320861A (en) 1986-07-14 1986-07-14 Lead frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61165923A JPS6320861A (en) 1986-07-14 1986-07-14 Lead frame

Publications (1)

Publication Number Publication Date
JPS6320861A true JPS6320861A (en) 1988-01-28

Family

ID=15821577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61165923A Pending JPS6320861A (en) 1986-07-14 1986-07-14 Lead frame

Country Status (1)

Country Link
JP (1) JPS6320861A (en)

Similar Documents

Publication Publication Date Title
JPS6320861A (en) Lead frame
JP2002353395A (en) Manufacturing method of lead frame, the lead frame and semiconductor device
JPH03230556A (en) Lead frame for semiconductor device
JP2846095B2 (en) Method for manufacturing semiconductor device
JPS61135131A (en) Resin mold semiconductor device
JPH1012802A (en) Lead frame and semiconductor device using the same
JPH0366150A (en) Semiconductor integrated circuit device
JPH11233709A (en) Semiconductor device, its manufacture and electronic equipment
JPH0621304A (en) Manufacture of lead frame and semiconductor device
JPH0498861A (en) Resin sealed type semiconductor device
JPS6171652A (en) Semiconductor device
JP2005150294A (en) Semiconductor device and its manufacturing method
JPS621239A (en) Semiconductor device
JPS5994834A (en) Lead frame
JPH03245560A (en) Lead frame
JPH01255259A (en) Resin-sealed semiconductor device
JPH0362564A (en) Semiconductor device
JPH05121635A (en) Lead frame
JPH113963A (en) Resin-sealed semiconductor device and lead frame
JPS6049658A (en) Semiconductor device
JPS63181358A (en) Semiconductor device and its manufacture
JPH03129869A (en) Lead frame
JPH0493055A (en) Two-terminal semiconductor device
JPH0462942A (en) Semiconductor device
JPH033354A (en) Semiconductor device