JPS63204612A - Ｓｏｉ単結晶形成法 - Google Patents
Ｓｏｉ単結晶形成法Info
- Publication number
- JPS63204612A JPS63204612A JP3567487A JP3567487A JPS63204612A JP S63204612 A JPS63204612 A JP S63204612A JP 3567487 A JP3567487 A JP 3567487A JP 3567487 A JP3567487 A JP 3567487A JP S63204612 A JPS63204612 A JP S63204612A
- Authority
- JP
- Japan
- Prior art keywords
- seeds
- film
- single crystal
- seed
- grain boundary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 20
- 230000015572 biosynthetic process Effects 0.000 title abstract description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 9
- 229920005591 polysilicon Polymers 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 7
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 238000002425 crystallisation Methods 0.000 claims description 2
- 230000008025 crystallization Effects 0.000 claims description 2
- 239000007788 liquid Substances 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 238000010894 electron beam technology Methods 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 4
- 230000001590 oxidative effect Effects 0.000 abstract description 3
- 238000001953 recrystallisation Methods 0.000 abstract description 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 abstract 1
- 230000012010 growth Effects 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3567487A JPS63204612A (ja) | 1987-02-20 | 1987-02-20 | Ｓｏｉ単結晶形成法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3567487A JPS63204612A (ja) | 1987-02-20 | 1987-02-20 | Ｓｏｉ単結晶形成法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63204612A true JPS63204612A (ja) | 1988-08-24 |
| JPH0413849B2 JPH0413849B2 (enrdf_load_stackoverflow) | 1992-03-11 |
Family
ID=12448423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3567487A Granted JPS63204612A (ja) | 1987-02-20 | 1987-02-20 | Ｓｏｉ単結晶形成法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63204612A (enrdf_load_stackoverflow) |
-
1987
- 1987-02-20 JP JP3567487A patent/JPS63204612A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0413849B2 (enrdf_load_stackoverflow) | 1992-03-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5371381A (en) | Process for producing single crystal semiconductor layer and semiconductor device produced by said process | |
| Kawamura et al. | Recrystallization of Si on amorphous substrates by doughnut‐shaped cw Ar laser beam | |
| JPS5939790A (ja) | 単結晶の製造方法 | |
| JPS63204612A (ja) | Ｓｏｉ単結晶形成法 | |
| JPS60143624A (ja) | 半導体装置の製造方法 | |
| JPS5939791A (ja) | 単結晶の製造方法 | |
| JPS6147627A (ja) | 半導体装置の製造方法 | |
| JP2793241B2 (ja) | Ｓｏｉ形成法 | |
| JPS60234312A (ja) | Ｓｏｉ膜形成方法 | |
| JPH0834175B2 (ja) | 半導体装置の製造方法 | |
| JPS61240676A (ja) | 半導体薄膜結晶の製造方法 | |
| JPS6058610A (ja) | 半導体装置の製造方法 | |
| JPH0556316B2 (enrdf_load_stackoverflow) | ||
| JPS58180019A (ja) | 半導体基体およびその製造方法 | |
| JPS6167218A (ja) | 半導体装置の製造方法 | |
| JPS61251114A (ja) | 単結晶シリコン膜の製造方法 | |
| JPS61198712A (ja) | 半導体装置の製造方法 | |
| JPS62130509A (ja) | 半導体基体の製造方法 | |
| JPS6015916A (ja) | 単結晶薄膜の製造方法 | |
| JPS5978999A (ja) | 半導体単結晶膜の製造方法 | |
| JPS62190717A (ja) | 半導体薄膜形成方法 | |
| JPS62208620A (ja) | 半導体装置の製造方法 | |
| JPH0775223B2 (ja) | 半導体単結晶層の製造方法 | |
| JPH0377654B2 (enrdf_load_stackoverflow) | ||
| JPS627115A (ja) | 単結晶薄膜形成法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |