JPS6320398B2 - - Google Patents

Info

Publication number
JPS6320398B2
JPS6320398B2 JP18479081A JP18479081A JPS6320398B2 JP S6320398 B2 JPS6320398 B2 JP S6320398B2 JP 18479081 A JP18479081 A JP 18479081A JP 18479081 A JP18479081 A JP 18479081A JP S6320398 B2 JPS6320398 B2 JP S6320398B2
Authority
JP
Japan
Prior art keywords
photodetector
photoconductor
semiconductor laser
semiconductor
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP18479081A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5886789A (ja
Inventor
Mitsuhiro Kitamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56184790A priority Critical patent/JPS5886789A/ja
Publication of JPS5886789A publication Critical patent/JPS5886789A/ja
Publication of JPS6320398B2 publication Critical patent/JPS6320398B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
JP56184790A 1981-11-18 1981-11-18 半導体レ−ザ・フオトデイテクタ光集積化素子 Granted JPS5886789A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56184790A JPS5886789A (ja) 1981-11-18 1981-11-18 半導体レ−ザ・フオトデイテクタ光集積化素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56184790A JPS5886789A (ja) 1981-11-18 1981-11-18 半導体レ−ザ・フオトデイテクタ光集積化素子

Publications (2)

Publication Number Publication Date
JPS5886789A JPS5886789A (ja) 1983-05-24
JPS6320398B2 true JPS6320398B2 (show.php) 1988-04-27

Family

ID=16159333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56184790A Granted JPS5886789A (ja) 1981-11-18 1981-11-18 半導体レ−ザ・フオトデイテクタ光集積化素子

Country Status (1)

Country Link
JP (1) JPS5886789A (show.php)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0157555B1 (en) * 1984-03-27 1990-10-03 Matsushita Electric Industrial Co., Ltd. A semiconductor laser and a method of producing the same
US5086004A (en) * 1988-03-14 1992-02-04 Polaroid Corporation Isolation of layered P-N junctions by diffusion to semi-insulating substrate and implantation of top layer
DE3910288A1 (de) * 1989-03-30 1990-10-04 Standard Elektrik Lorenz Ag Verfahren zur herstellung monolithisch integrierter optoelektronischer module

Also Published As

Publication number Publication date
JPS5886789A (ja) 1983-05-24

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