JPS6320158A - Soldering method for target material to spattering packing plate - Google Patents
Soldering method for target material to spattering packing plateInfo
- Publication number
- JPS6320158A JPS6320158A JP16645186A JP16645186A JPS6320158A JP S6320158 A JPS6320158 A JP S6320158A JP 16645186 A JP16645186 A JP 16645186A JP 16645186 A JP16645186 A JP 16645186A JP S6320158 A JPS6320158 A JP S6320158A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- soldering
- alloy
- target material
- layer thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005476 soldering Methods 0.000 title claims abstract description 27
- 239000013077 target material Substances 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims description 14
- 238000012856 packing Methods 0.000 title abstract 3
- 229910000679 solder Inorganic materials 0.000 claims abstract description 16
- 229910001128 Sn alloy Inorganic materials 0.000 claims abstract description 14
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 4
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 238000005477 sputtering target Methods 0.000 claims 1
- 229910000765 intermetallic Inorganic materials 0.000 abstract description 12
- 229910000881 Cu alloy Inorganic materials 0.000 abstract description 6
- 229910017755 Cu-Sn Inorganic materials 0.000 abstract description 4
- 229910017927 Cu—Sn Inorganic materials 0.000 abstract description 4
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 abstract description 4
- 238000001816 cooling Methods 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 241001530473 Swertia perennis Species 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 235000012976 tarts Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Abstract
Description
【発明の詳細な説明】
合金製ターグツト材をＣｕまたはＣｕ合金製バンキング
プレート（冷却板）に強固にはんだ付けする方法に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for firmly soldering an alloy tart material to a Cu or Cu alloy banking plate (cooling plate).
一般に、ＡｌまたはＡｌ合合金製ターラント材スパッタ
リングに用いる場合には、ＣｕまたはＣｕ合金製バッキ
ングプレートにはんだ付けした状態で実用に供されてい
る。Generally, when used for sputtering a tarant material made of Al or Al alloy, it is put into practical use in a state where it is soldered to a backing plate made of Cu or Cu alloy.
従来、かかるターゲツト材のバンキングプレートへのは
んだ付けには、Ｓｎ合金はんだが用いられているが、Ａ
ｌまたはＡｌ金合金対するＳｎ合金はんだのぬれ性がき
わめて悪く、このためＡｌまたはＡ１合金製ターゲツト
材のはんだ付け面に、Ｓｎ合金はんだとのぬれ性が良好
なＣｕ層を１０〜２０μｍの平均層厚で形成した状態で
、はんだ付けを行なっている。Conventionally, Sn alloy solder has been used to solder such target materials to banking plates, but A
The wettability of Sn alloy solder to Al or Al gold alloy is extremely poor. Therefore, a 10 to 20 μm average layer of Cu layer, which has good wettability with Sn alloy solder, is applied to the soldering surface of the Al or Al alloy target material. Soldering is performed in a state where it is formed thickly.
しかし、上記のターゲツト材のはんだ付け面にＣｕ層を
形成して行なう従来のはんだ付け方法では、Ｃｕ層が相
対的に厚いことに原因して、はんだ付け時およびス・ぐ
ツタリング時にはんだ付け部にきわめて脆いＣｕ −Ｓ
ｎの金属間化合物層が形成されるようになシ、この結果
、特に近年の大型化したターゲツト材では、残留歪や熱
衝撃などによって実操業中に剥離が生じ、事故発生の原
因となるほか、さらに使用済のターゲツト材をバッキン
グプレートからホットプレートなどを用いて加熱して分
離しようとしてでも、前記Ｃｕ−８ｎの金属間化合物層
は融点が高いために、草々る加熱分離は困難であり、ハ
ンマなどによるこう打衝撃を加える力どの子分の手間を
必要とするものである。However, in the conventional soldering method in which a Cu layer is formed on the soldering surface of the target material described above, due to the relatively thick Cu layer, the soldering part may be damaged during soldering and spacing. Cu-S is extremely brittle.
n intermetallic compound layer is formed, and as a result, especially in target materials that have become larger in recent years, peeling occurs during actual operation due to residual strain and thermal shock, which can cause accidents. Furthermore, even if an attempt is made to separate the used target material from the backing plate by heating it using a hot plate or the like, the Cu-8n intermetallic compound layer has a high melting point, so it is difficult to separate the target material by heating. It requires the effort of a subordinate to apply the force of a hammer or the like.
そこで、本発明者等は、上述のような観点から、脆い金
属間化合物層の形成なく、かつ強固にＭまたはＡ１合金
製ターゲツト材をＣｕまたはＣｕ合金製バッキングプレ
ートに、Ｓｎ合金はんだを用いて接合すべく研究を行な
った結果、
上記のはんだ付けしようとする部材のはんだ付け面のそ
れぞれに、Ｎｉ層を介して、相対的に薄いＣｕ層を形成
した状態で、Ｓｎ合金はんだを用いてはんだ付けを行な
うと、前記Ｎｉ層には、Ｃｕ −８ｎの金属間化合物層
の形成を抑制する作用があるので、上記のようにＣｕ層
を相対的に薄くしたことと合まって、はんだ付け部に脆
い金属間化合物層の形成が皆無となることから、はんだ
付け部にＳｎ合金はんだのもつ良好な靭性が確保され、
この結果歪や衝撃などによってターゲツト材がバンキン
グプレートから剥離することがなくなり、かつ加熱によ
る使用済ターゲツト材の分離も可能となり、さらに前記
Ｃｕ層がＮｉ層に対するＳｎ合金はんだのぬれ性を著し
く向上させることから、強固な接合強度をもったはんだ
付け部が形成されるようになるという知見を得たのであ
る。Therefore, from the above-mentioned viewpoint, the inventors of the present invention have developed a method for firmly attaching an M or A1 alloy target material to a Cu or Cu alloy backing plate using Sn alloy solder without forming a brittle intermetallic compound layer. As a result of research into joining, it was found that a relatively thin Cu layer was formed on each of the soldering surfaces of the components to be soldered, and a Sn alloy solder was used to form a relatively thin Cu layer through a Ni layer. When soldering is performed, the Ni layer has the effect of suppressing the formation of a Cu-8n intermetallic compound layer. Since there is no formation of a brittle intermetallic compound layer, the good toughness of the Sn alloy solder is ensured at the soldering part.
As a result, the target material does not peel off from the banking plate due to strain or impact, and it becomes possible to separate the used target material by heating. Furthermore, the Cu layer significantly improves the wettability of the Sn alloy solder to the Ni layer. This led to the knowledge that soldered parts with strong bonding strength can be formed.
この発明は、上記知見にもとづいてなされたものであっ
て、ＡｌまたはＡ１合金製ターケゝット材を、Ｃｕまた
はＣｕ合金製バッキングプレートにはんだ付けするに際
して、
これら両部材のはんだ付け面に、それぞれ平均層厚：１
−１５μｍのＮｉ層を介して、平均層厚＝０．１〜５μ
ｍのＣｕ層を形成した後、これら両部材をＳｎ合金はん
だを用いてはんだ付けすることからなるス、６ツタリン
グ用ターゲット材のバンキングプレートへのはんだ付け
方法に特徴を有するものである。This invention was made based on the above knowledge, and when soldering an Al or A1 alloy target material to a Cu or Cu alloy backing plate, the soldering surface of both these members is Average layer thickness: 1
- Average layer thickness = 0.1-5μ via Ni layer of 15μm
The present invention is characterized by the method of soldering the target material for 6-tuttering to the banking plate, which consists of forming a Cu layer of m and then soldering these two members using Sn alloy solder.
つぎに、この発萌の方法において、Ｎｉ層およびＣｕ層
の平均層厚を上記の通りに限定した理由を説明する。Next, the reason why the average layer thicknesses of the Ni layer and the Cu layer are limited as described above in this sprouting method will be explained.
（ａ） Ｎｉ層の平均層厚
Ｎｉ層には、上記の通シ脆い金属間化合物層の形成を抑
制するほか、特にターゲツト材がＳｎ合金はんだにさら
されて接合強度が低下するようになるのを防止する作用
があるが、その平均層厚が１μｍ未満では前記作用に所
望の効果が得られず、一方その平均層厚を１５μｍを越
えて厚くしても前記作用は飽和するだけであり、経済性
を考慮して、その平均層厚を１〜１５μｍと定めた。(a) Average layer thickness of Ni layer In addition to suppressing the formation of the above-mentioned brittle intermetallic compound layer, the Ni layer is also used to prevent bonding strength from decreasing when the target material is exposed to Sn alloy solder. However, if the average layer thickness is less than 1 μm, the desired effect cannot be obtained, and on the other hand, if the average layer thickness is increased beyond 15 μm, the effect is only saturated. Considering economic efficiency, the average layer thickness was determined to be 1 to 15 μm.
（ｂ） Ｃｕ層の平均層厚
上記のようにＣｕ層には、Ｎｉ層とＳｎ合金はんだとの
漬れ性を向上させて強固な接合強度を確保する作用があ
るが、その平均層厚が０．１μｍ未満では所望の接合強
度を確保することができず、一方その平均層厚が５μｍ
を越えると、はんだ付け部に脆い（：ｕ −Ｓｎ の
金属間化合物層が形成されるようにガることがら、その
平均層厚を０．１〜５μｍ と定めた。(b) Average layer thickness of Cu layer As mentioned above, the Cu layer has the effect of improving the soakability between the Ni layer and the Sn alloy solder and ensuring strong bonding strength, but the average layer thickness of the Cu layer is If the thickness is less than 0.1 μm, the desired bonding strength cannot be secured; on the other hand, if the average layer thickness is 5 μm
The average layer thickness was determined to be 0.1 to 5 μm, since if the thickness exceeds 0.1 μm, a brittle (:u-Sn) intermetallic compound layer may be formed at the soldered portion.
つぎに、この発明の方法を実施例により具体的に説明す
る。Next, the method of the present invention will be specifically explained using examples.
ターゲツト材として、いずれも平面：’ｌＱｓｍ×１０
′Ｂ、厚さ：５語の寸法を有し、かつそれぞれ第１表に
示される組成をもったＡｌまたはＡ１合金製□試験片を
用意し、またバッキングプレートとして、直径：２０ｍ
１１φ×厚さ＝１０鋸の寸法を有し、かつ同じくそれぞ
れ第１表に示される組成をもったＣｕまたはＣｕ合金製
試験片を用意し、これら両試験片のはんだ付け面に、通
常のイオンブレーティング法を用いて、それぞれ第１表
に示される層厚のＮｉ層およびＣｕ層を形成し、ついで
これら両試験片を、同じく第１表に示される組成、並び
に平面＝１０訪×１０Ｂ、厚さ＝０．３訪の寸法をもつ
たＳｎ合金はんだをはさみ、かつＡｌまたはＭ合金製試
験片を上部に位置せしめて重ね合わせ、さらに１０Ｋｇ
の重シを乗せ、この状態で、ｌＸｌ０−’Ｔｏｒｒの真
空中、温度＝２５０℃に３分間保持の条件で、はんだ付
けを行ない、さらにス・ぐツタリング条件に相当する温
度：１４０℃に５０時間保持の加熱処理を施すことによ
って本発明法１〜８および従来法１〜３をそれぞれ実施
した。As a target material, both are flat: 'lQsm×10
'B, thickness: 5 test pieces made of Al or A1 alloy with the composition shown in Table 1 were prepared, and as a backing plate, a diameter: 20 m was prepared.
Prepare test pieces made of Cu or Cu alloy having the dimensions of 11φ x thickness = 10 saws and having the compositions shown in Table 1, respectively. Using the brating method, a Ni layer and a Cu layer were formed with the layer thicknesses shown in Table 1, and then these test pieces were prepared with the compositions also shown in Table 1, plane = 10B x 10B, Sandwich the Sn alloy solder with a thickness of 0.3 cm and place the Al or M alloy test piece on top, and then stack the solder with a weight of 10 kg.
In this state, soldering was carried out under the condition of holding the temperature at 250℃ for 3 minutes in a vacuum of lXl0-' Torr, and then soldering at a temperature equivalent to the soldering condition: 140℃ for 50 minutes. Methods 1 to 8 of the present invention and conventional methods 1 to 3 were carried out by performing a time-holding heat treatment, respectively.
ついで、この本発明法１〜８および従来法１〜３によっ
て得られたはんだ付け試験片について、はんだ付け部の
剪断強度および溶融温度を測定した。々お、剪断強度は
接合強度を、また溶融温度はＳｎ −（：ｕ の金属間
化合物層の形成の有無をそれぞれ評価するだめのもので
ある。Next, the shear strength and melting temperature of the soldered portions of the soldered test pieces obtained by Methods 1 to 8 of the present invention and Conventional Methods 1 to 3 were measured. The shear strength is used to evaluate the bonding strength, and the melting temperature is used to evaluate the presence or absence of the formation of an intermetallic compound layer of Sn - (:u).
第１表に示される結果から、本発明法１〜８によれば、
いずれもＣｕ −Ｓｎ の金属間化合物層の形成なく、
高い接合強度が得られるのに対して、従来法１〜３では
、いずれも高い接合強度が得られるものの、（：ｕ −
Ｓｎの金属間化合物層の形成が避けｌ イに
られないことが明らかである。From the results shown in Table 1, according to methods 1 to 8 of the present invention,
In both cases, there is no formation of a Cu-Sn intermetallic compound layer,
While high bonding strength can be obtained in conventional methods 1 to 3, although high bonding strength can be obtained in all methods (:u −
It is clear that the formation of an intermetallic layer of Sn cannot be avoided.
上述のように、この発明のはんだ付け法によれば、はん
だ付け部にＣｕ −Ｓｎの金属間化合物層の形成なく、
高い接合強度が得られ、したがってターゲツト材が大型
化しても、これがバッキンググレートから剥離すること
が皆無となるほか、使用済ターゲツト材のバッキングプ
レートからの加熱分離が可能となるなど工業上有用な効
果が得られるのである。As described above, according to the soldering method of the present invention, there is no formation of a Cu-Sn intermetallic compound layer at the soldered part.
High bonding strength is obtained, so even if the target material becomes larger, it will never separate from the backing plate, and it also has industrially useful effects such as making it possible to separate the used target material from the backing plate by heating. is obtained.
Claims (1)
合金製バツキングプレートにはんだ付けするに際して、 これら両部材のはんだ付け面に、それぞれ平均層厚：１
〜１５μｍのＮｉ層を介して、平均層厚：０．１〜５μ
ｍのＣｕ層を形成した後、 これら両部材をＳｎ合金はんだを用いてはんだ付けする
ことを特徴とするスパッタリング用ターゲツト材のバツ
キングプレートへのはんだ付け法。[Claims] Al or Al alloy target material is made of Cu or Cu.
When soldering to the alloy bucking plate, the average layer thickness: 1
Average layer thickness: 0.1-5μ via ~15μm Ni layer
A method for soldering a sputtering target material to a backing plate, which comprises forming a Cu layer of m and then soldering these two members using Sn alloy solder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16645186A JPH0698479B2 (en) | 1986-07-15 | 1986-07-15 | Method of soldering target material for sputtering to backing plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16645186A JPH0698479B2 (en) | 1986-07-15 | 1986-07-15 | Method of soldering target material for sputtering to backing plate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6320158A true JPS6320158A (en) | 1988-01-27 |
| JPH0698479B2 JPH0698479B2 (en) | 1994-12-07 |
Family
ID=15831646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16645186A Expired - Lifetime JPH0698479B2 (en) | 1986-07-15 | 1986-07-15 | Method of soldering target material for sputtering to backing plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0698479B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0313570A (en) * | 1989-06-09 | 1991-01-22 | Mitsubishi Electric Corp | Device for producing semiconductor and target for the device |
| JP2010036250A (en) * | 2008-07-11 | 2010-02-18 | Gunma Univ | Method of joining aluminum member with copper member |
-
1986
- 1986-07-15 JP JP16645186A patent/JPH0698479B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0313570A (en) * | 1989-06-09 | 1991-01-22 | Mitsubishi Electric Corp | Device for producing semiconductor and target for the device |
| JP2010036250A (en) * | 2008-07-11 | 2010-02-18 | Gunma Univ | Method of joining aluminum member with copper member |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0698479B2 (en) | 1994-12-07 |
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