JPS6319865A - Hybrid circuit element - Google Patents

Abstract

PURPOSE:To produce a hybrid circuit element comprising bioelectric elements and conventional semiconductor elements by a method wherein the bioelectric elements comprising electron transferrable biological material or pseudo living body material and semiconductor elements are integrated with one another to be electrically connected by wirings. CONSTITUTION:A hybrid circuit element is composed of a substrate 1, an Si device layer 2 formed on the substrate 1, an insulating layer 3 formed on a part of the surface of Si device layer 2, a monolithic bioelectric element circuit 4 formed on the insulating layer 3, while said layers 4 and 2 are electrically connected by wirings 5. The monolithic bioelectric element circuit 4 uses rectifying elements D1-D4, switching elements Tr1, Tr2, resistor elements R1, R2 (R1 comprises D1, D2, R2 comprises D3, D4) and a capacitor element C1 to make interconnection in the all directions using the electron transferrable and conductive protein molecules 4 while insulating said elements from one another with protein molecules 5 of low dielectric constant. Through these procedures, a hybrid circuit making the best use of the bioelectric elements and semiconductor elements can be produced.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a hybrid circuit element including various bioelectrical elements formed using biomaterials.

[Conventional technology]

Conventionally, rectifying elements used in integrated circuits have had an MO3 structure as shown in FIG.

In the figure, 11 is a p-type silicon substrate, 12 is an n-shade region, 13 is a p-shade region, 14 is an n-shade region, 15 is a Si0g film, and 16.17 is an electrode, and these two electrodes 16.1
p-n junction between 7 (p shadow area 13 - n shadow area 14 junction)
is formed, thereby realizing rectifying characteristics.

[Problem that the invention seeks to solve]

Because the conventional MO3 structure rectifier is configured as described above, it can be microfabricated, and currently LSIs using rectifiers with the above structure or transistor elements with a similar structure are suitable for 256 LSI has been put into practical use.

By the way, in order to increase the memory capacity and operation speed of integrated circuits, it is essential to miniaturize the elements themselves, but Si
In devices using ultra-fine patterns of about 0.2 μm, the mean free path of electrons becomes almost equal to the device size, and there is a limit that independence of the devices cannot be maintained.

In this way, silicon technology, which continues to develop day by day, is expected to eventually hit a wall in terms of miniaturization. What we can do is needed.

Under these circumstances, the inventors of the present invention have developed a rectifier that uses electron transport proteins that exist in living organisms and utilizes the difference in their redox potential to exhibit rectifying characteristics similar to those of p-n junctions using p- and n-type semiconductors. element.

We also developed a transistor device that exhibits transistor characteristics similar to those of a p-n-p junction transistor. This allows the device size to be ultra-fine at the level of biomolecules, making it possible to increase the density and speed of circuits.

Furthermore, in order to construct a bioelectrical element circuit using such elements, resistors with good compatibility with these elements,
Although we have developed elements such as capacitors, the next problem is how to construct circuits using these elements.For this, we have developed circuits using both bioelectric elements using these biomaterials and conventional semiconductor elements. It is also considered possible to configure .

The present invention was made in view of the above situation, and an object of the present invention is to obtain a hybrid circuit element consisting of a bioelectrical element and a conventional semiconductor element.

[Means for solving problems]

The hybrid circuit device according to the present invention is constructed by integrating a bioelectrical device constructed using a biological material or a pseudo-biological material capable of electron transfer with a semiconductor device, and electrically connecting the two with wiring. It is something.

[Effect]

In this invention, a hybrid circuit element is formed by integrating a bioelectric element and a semiconductor element, so that a circuit that takes advantage of the advantages of the above-described pixel element can be obtained.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

First, bioelectrical elements developed by the present inventors, such as a rectifying element, a switching element, a resistive element, and a capacitor element, will be explained.

That is, the rectifying element developed by the present inventors is shown in Fig. 3(a).
As shown in Figure 2, two types of electron transport proteins with different redox (oxidation-reduction) potentials, for example, flavotoxin molecule 1 and cytochrome C molecule 2, are adhesively bonded to form a complex, and each molecule has a pair of electron transport proteins. The electrodes 4a and 4b are connected to each other. In this rectifying element, the redox potentials of flavotoxin 1 and cytochrome C2 are different as shown in Figure 3 (b), so when a voltage is applied between them, the electrons will form the solid line in the figure. Accordingly, a rectifying element exhibiting rectifying characteristics similar to that of a pn junction diode in which an n-type semiconductor and a p-type semiconductor are joined can be obtained.

In addition, the switch element developed by the present inventors is shown in Fig. 4 (
As shown in al, for example, the flavotoxin molecule 1 is adhesively bonded to both sides of the cytochrome C molecule 2, and electrodes 4c, 4d, and 4e are connected to each side. In this switch element Tr, the redox potential state when no voltage is applied to each electrode 4c, 4d, 4e is the state a shown in FIG.
The redox potential states when applying a negative voltage ``2'' to the electrode 4C with respect to the electrode 4e, or when applying a negative voltage ``1'' to the electrode 4d with respect to the voltage i4e in addition to the voltage v2, are shown in Fig. 4. (The state becomes state c. In state a and b, no current flows between the electrodes 4C94e, but in state C, it flows. Therefore, the state in which voltage 2 is applied between electrodes 4c and 4e By turning on and off the voltage v1 between vL4d and 48, this element can be given switching characteristics.

Furthermore, as shown in FIG. 5, for example, the resistance element developed by the present inventors includes a plurality of the above-mentioned composites, in this case two, arranged in antiparallel between a pair of electrodes 4f and 4g. There is a resistance element R, and in this element R, a desired resistance value can be obtained by changing the number of the above-mentioned composites.

Similarly, as the capacitor element C, for example, as shown in FIG.
There is one configured by placing it between 4i.

Further, the actual configuration of the rectifying element is as shown in FIG.

That is, in FIG. 9, 76 is a substrate with kfi edge characteristics, 77 is a metal electrode such as Ag, Au, A1, etc.
A plurality of strips are formed in parallel on 6.

78 is a group + anti-76 on L B (Langmuir-B
Cytochrome C prepared by the Rodgett method etc.
79 is a second electron transfer protein membrane made of flavotoxin prepared by the same <LB method, etc., and is cumulatively adhesively bonded to the first ii1 child transfer protein membrane 78. 80 is a plurality of parallel electrodes 77
A plurality of parallel electrodes are formed perpendicularly to the second electron transfer protein membrane 79.

Further, the actual configuration of the above switch element is as shown in FIG.

That is, in FIG. 10, 86 is a substrate with insulating properties;
87 is a metal electrode such as Ag, Au, A1, etc., and the substrate 86
Multiple stripes are formed in parallel on the top. Reference numeral 88 denotes a first electron transfer protein film made of flavotoxin, which is formed on the substrate 86 by the LB method or the like, and is formed on the plurality of electrodes 87 described above.

Reference numeral 90 denotes a plurality of parallel electrodes formed perpendicularly to the plurality of parallel electrodes 87, which are connected to the first electron transfer protein membrane 88.
formed on top. Reference numeral 89 denotes a second electron transfer protein film made of cytochrome C, which was also created by the LB method, etc., and is cumulatively adhesively bonded to the first electron transfer protein film 88.
It is joined to the electrode 90. Reference numeral 91 denotes a third electron transfer protein film made of flavotoxin prepared by the same <LB method, etc., which is cumulatively adhesively bonded to the eight second electron transfer protein films. A plurality of parallel electrodes 92 are formed perpendicularly to the plurality of parallel electrodes 90, and are formed on the third electron transfer protein membrane 91.

By using the various elements mentioned above, and by using a conductive protein that can transfer electrons in all directions for the wiring and a protein that does not have an electron transfer function for the insulator, we have created a monolithic bioelectric device circuit using only protein molecules. can be configured.

That is, FIG. 8(C) shows the rectifying elements -D, and the switching elements Tr as shown in FIGS. 3.4 and 5.6.

Tr2. Resistance element R+, Rz (R+ beam, D
.

, R2 is D! , Da), and a capacitor element C4 is used, and the capacitor element C4 is used, and the capacitor element C4 is
Protein molecules with a low dielectric constant (
By wiring using conductive protein molecules 4 that can transfer electrons in all directions while being insulated by insulating protein molecules (g), the circuits represented by the equivalent circuits in Figures 8(a) and (b) can be constructed using protein molecules. In this way, it is possible to obtain a circuit whose element size is ultra-fine at the level of biomolecules and which is capable of high density and high speed.

FIG. 1 shows a hybrid circuit element according to a first embodiment of the present invention. In the figure, 1 is a substrate, 2 is an St device layer formed on the base vil, and 3 is a part on the surface of the Si device layer 2. The formed insulating layer 4 is a monolithic bioelectrical device circuit as shown in FIG. 8 formed on the insulating layer 3. However, this may of course be an element with a simpler configuration. Reference numeral 5 denotes wiring for electrically connecting the bioelectric element circuit 4 and the Si device layer 2. In this embodiment, a bioelectric element circuit 4 is formed on the Si device layer 2 via an insulator N3, and the two are electrically connected by wiring.

In this example, the bioelectrical element circuit and the Si device are combined on the same substrate, so the raw
It is possible to obtain a circuit that has both the high-density and high-speed device characteristics of a J electric device circuit and the characteristics of a semiconductor device.

FIG. 2 shows a vibe lift circuit element according to a second embodiment of the present invention, in which the same reference numerals as in FIG. 1 indicate the same elements. In this example, a bioelectrical element circuit 4 is formed on the entire surface of the Si device layer 2 with an insulating layer 3 interposed therebetween.
Both 3.4 are connected by wiring 5 through layer 3, forming a multilayer structure consisting of bioelectrical element circuit 4 and Si device layer 2.

In this embodiment, as in the first embodiment, it is possible to obtain a circuit that takes advantage of the advantages of the pixel element, and it is also possible to improve the degree of integration of the circuit.

〔Effect of the invention〕

As described above, according to the present invention, a hybrid circuit element consisting of a bioelectric element and a semiconductor element is constructed, so that
This has the effect of making it possible to construct a circuit that has both the high-density and high-speed characteristics of bioelectric devices and semiconductor devices, and the characteristics of semiconductor devices.

[Brief explanation of the drawing]

Fig. 1 and Fig. 2 are schematic diagrams showing hybrid circuit elements according to the first and second embodiments of the present invention, respectively, and Fig. 3 +a) is a schematic diagram showing an example of a rectifying element developed by the present inventors. 3(b) is a diagram showing the redox potential state, FIG. 4 is a schematic diagram showing an example of the switch element developed by the present inventors, and FIG. 5 is a diagram showing the resistance element developed by the present inventors. FIG. 6 is a schematic diagram showing an example of a capacitor element developed by the present inventors, and FIG. 7 is a schematic diagram showing an example of a capacitor element developed by the present inventors.
A diagram showing an example of a rectifying element with an O3 configuration, FIG. 8 is a diagram showing a monolithic bioelectric element circuit developed by the present inventors,
Fig. 9 is a schematic cross-sectional configuration diagram showing a device incorporating a rectifying element developed by the present inventors, Fig. 10 is an insulating layer of the switch element developed by the present inventors, and 4 is a bioelectric element circuit. , 5 is wiring. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

[Claims] (1) A hybrid circuit characterized by integrating a bioelectrical element constructed using a biological material or pseudo-biological material capable of electron transfer and a semiconductor element, and electrically connecting the two with wiring. element.