JPS6319817B2 - - Google Patents
Info
- Publication number
- JPS6319817B2 JPS6319817B2 JP55033899A JP3389980A JPS6319817B2 JP S6319817 B2 JPS6319817 B2 JP S6319817B2 JP 55033899 A JP55033899 A JP 55033899A JP 3389980 A JP3389980 A JP 3389980A JP S6319817 B2 JPS6319817 B2 JP S6319817B2
- Authority
- JP
- Japan
- Prior art keywords
- ion
- film
- sensitive
- inorganic
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000002500 ions Chemical class 0.000 claims description 96
- 230000000087 stabilizing effect Effects 0.000 claims description 39
- 238000009792 diffusion process Methods 0.000 claims description 34
- 238000004519 manufacturing process Methods 0.000 claims description 24
- 239000012528 membrane Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 16
- 230000005669 field effect Effects 0.000 claims description 14
- 238000005342 ion exchange Methods 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 150000002902 organometallic compounds Chemical class 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 238000000354 decomposition reaction Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 description 17
- 229910001415 sodium ion Inorganic materials 0.000 description 15
- 239000000758 substrate Substances 0.000 description 11
- 238000005468 ion implantation Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 6
- 229910001414 potassium ion Inorganic materials 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 150000004767 nitrides Chemical group 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 102000004190 Enzymes Human genes 0.000 description 2
- 108090000790 Enzymes Proteins 0.000 description 2
- 229910018068 Li 2 O Inorganic materials 0.000 description 2
- 229910007991 Si-N Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910006294 Si—N Inorganic materials 0.000 description 2
- -1 alkoxide compound Chemical class 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- 229910002800 Si–O–Al Inorganic materials 0.000 description 1
- WQDUMFSSJAZKTM-UHFFFAOYSA-N Sodium methoxide Chemical compound [Na+].[O-]C WQDUMFSSJAZKTM-UHFFFAOYSA-N 0.000 description 1
- 108010067973 Valinomycin Proteins 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- FCFNRCROJUBPLU-UHFFFAOYSA-N compound M126 Natural products CC(C)C1NC(=O)C(C)OC(=O)C(C(C)C)NC(=O)C(C(C)C)OC(=O)C(C(C)C)NC(=O)C(C)OC(=O)C(C(C)C)NC(=O)C(C(C)C)OC(=O)C(C(C)C)NC(=O)C(C)OC(=O)C(C(C)C)NC(=O)C(C(C)C)OC1=O FCFNRCROJUBPLU-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical group 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- ADZWSOLPGZMUMY-UHFFFAOYSA-M silver bromide Chemical compound [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- FCFNRCROJUBPLU-DNDCDFAISA-N valinomycin Chemical compound CC(C)[C@@H]1NC(=O)[C@H](C)OC(=O)[C@@H](C(C)C)NC(=O)[C@@H](C(C)C)OC(=O)[C@H](C(C)C)NC(=O)[C@H](C)OC(=O)[C@@H](C(C)C)NC(=O)[C@@H](C(C)C)OC(=O)[C@H](C(C)C)NC(=O)[C@H](C)OC(=O)[C@@H](C(C)C)NC(=O)[C@@H](C(C)C)OC1=O FCFNRCROJUBPLU-DNDCDFAISA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Molecular Biology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3389980A JPS56130648A (en) | 1980-03-19 | 1980-03-19 | Production of ion sensor |
| GB8021027A GB2072418B (en) | 1980-03-19 | 1980-06-26 | Ion sensor and method of manufacturing the same |
| US06/163,792 US4446474A (en) | 1980-03-19 | 1980-06-27 | Ion sensor FET with surface treated metal gate |
| DE3024295A DE3024295C2 (de) | 1980-03-19 | 1980-06-27 | Ionenmessfühler und Verfahren zu dessen Herstellung |
| FR8014342A FR2478880A1 (fr) | 1980-03-19 | 1980-06-27 | Capteur ionique et son procede de fabrication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3389980A JPS56130648A (en) | 1980-03-19 | 1980-03-19 | Production of ion sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56130648A JPS56130648A (en) | 1981-10-13 |
| JPS6319817B2 true JPS6319817B2 (fr) | 1988-04-25 |
Family
ID=12399366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3389980A Granted JPS56130648A (en) | 1980-03-19 | 1980-03-19 | Production of ion sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56130648A (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5870154A (ja) * | 1981-10-22 | 1983-04-26 | Kuraray Co Ltd | 陽イオンセンサ−の製造法 |
| JPS6270749A (ja) * | 1985-09-25 | 1987-04-01 | Toshiba Corp | Ｆｅｔセンサおよびその製造方法 |
| JP2704817B2 (ja) * | 1992-11-19 | 1998-01-26 | 新日本製鐵株式会社 | 残湯残滓排出装置 |
| JPH0829403B2 (ja) * | 1993-04-02 | 1996-03-27 | 株式会社神戸製鋼所 | 連続鋳造設備 |
| EP2224234A4 (fr) * | 2007-12-18 | 2015-01-28 | Horiba Ltd G | Electrode selective d'ions |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51126891A (en) * | 1975-04-28 | 1976-11-05 | Eiji Niki | Ion selective electrode with semiconductor crystal as the sensitive el ement |
| JPS51139289A (en) * | 1975-03-12 | 1976-12-01 | Univ Utah | Chemically sensitive fe converter |
-
1980
- 1980-03-19 JP JP3389980A patent/JPS56130648A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51139289A (en) * | 1975-03-12 | 1976-12-01 | Univ Utah | Chemically sensitive fe converter |
| JPS51126891A (en) * | 1975-04-28 | 1976-11-05 | Eiji Niki | Ion selective electrode with semiconductor crystal as the sensitive el ement |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56130648A (en) | 1981-10-13 |
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