JPS56130648A - Production of ion sensor - Google Patents

Production of ion sensor

Info

Publication number
JPS56130648A
JPS56130648A JP3389980A JP3389980A JPS56130648A JP S56130648 A JPS56130648 A JP S56130648A JP 3389980 A JP3389980 A JP 3389980A JP 3389980 A JP3389980 A JP 3389980A JP S56130648 A JPS56130648 A JP S56130648A
Authority
JP
Japan
Prior art keywords
film
matter
surface stabilizing
ion
stabilizing film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3389980A
Other languages
Japanese (ja)
Other versions
JPS6319817B2 (en
Inventor
Kazumuki Yanagisawa
Takashi Mizusaki
Masayuki Matsuo
Masaki Esashi
Hiroshi Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Optical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Optical Co Ltd filed Critical Olympus Optical Co Ltd
Priority to JP3389980A priority Critical patent/JPS56130648A/en
Priority to GB8021027A priority patent/GB2072418B/en
Priority to FR8014342A priority patent/FR2478880A1/en
Priority to DE3024295A priority patent/DE3024295C2/en
Priority to US06/163,792 priority patent/US4446474A/en
Publication of JPS56130648A publication Critical patent/JPS56130648A/en
Publication of JPS6319817B2 publication Critical patent/JPS6319817B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE:To hold an ion sensing matter stably, by forming an impurity layer from the surface of a film consisting of an inorganic matter by the impurity which reacts on a constituent matter of this film to form an ion exchange site sensitive to specific ions. CONSTITUTION:Drain diffusion region 43 and source diffusion region 44 are formed in semiconductor substance 42 of approximately 200mum thickness, and gate insulating film 45 is formed on the surface of the substance. After that, surface stabilizing film 46 is formed on gate insulating film 45. This surface stabilizing film is formed with the composite consisting of ion permeable inorganic insulating materials such as oxides and nitrides of Si3N4, SiOxNy, Al and Ta by CVD or sputtering. After the film of diffusion source 47 which reacts on the constituent matter of the surface stabilizing film to form an ion exchange site sensitive to specific ions is formed on this surface stabilizing film, gate part 41 is subjected to the heat treatment to diffuse thermally the composite of the diffusion source into the surface stabilizing film, and impurity layer 48 is formed which functions as the ion sensing region.
JP3389980A 1980-03-19 1980-03-19 Production of ion sensor Granted JPS56130648A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP3389980A JPS56130648A (en) 1980-03-19 1980-03-19 Production of ion sensor
GB8021027A GB2072418B (en) 1980-03-19 1980-06-26 Ion sensor and method of manufacturing the same
FR8014342A FR2478880A1 (en) 1980-03-19 1980-06-27 ION SENSOR AND METHOD FOR MANUFACTURING THE SAME
DE3024295A DE3024295C2 (en) 1980-03-19 1980-06-27 Ion probes and methods of making them
US06/163,792 US4446474A (en) 1980-03-19 1980-06-27 Ion sensor FET with surface treated metal gate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3389980A JPS56130648A (en) 1980-03-19 1980-03-19 Production of ion sensor

Publications (2)

Publication Number Publication Date
JPS56130648A true JPS56130648A (en) 1981-10-13
JPS6319817B2 JPS6319817B2 (en) 1988-04-25

Family

ID=12399366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3389980A Granted JPS56130648A (en) 1980-03-19 1980-03-19 Production of ion sensor

Country Status (1)

Country Link
JP (1) JPS56130648A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5870154A (en) * 1981-10-22 1983-04-26 Kuraray Co Ltd Manufacture of cation sensor
JPS6270749A (en) * 1985-09-25 1987-04-01 Toshiba Corp Fet sensor and its preparation
JPH067905A (en) * 1993-04-02 1994-01-18 Kobe Steel Ltd Continuous casting device
JPH06154963A (en) * 1992-11-19 1994-06-03 Nippon Steel Corp Remaining molten metal and remnants discharge device
WO2009078418A1 (en) * 2007-12-18 2009-06-25 Horiba, Ltd. Ion-selective electrode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51126891A (en) * 1975-04-28 1976-11-05 Eiji Niki Ion selective electrode with semiconductor crystal as the sensitive el ement
JPS51139289A (en) * 1975-03-12 1976-12-01 Univ Utah Chemically sensitive fe converter

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51139289A (en) * 1975-03-12 1976-12-01 Univ Utah Chemically sensitive fe converter
JPS51126891A (en) * 1975-04-28 1976-11-05 Eiji Niki Ion selective electrode with semiconductor crystal as the sensitive el ement

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5870154A (en) * 1981-10-22 1983-04-26 Kuraray Co Ltd Manufacture of cation sensor
JPH0252820B2 (en) * 1981-10-22 1990-11-14 Kuraray Co
JPS6270749A (en) * 1985-09-25 1987-04-01 Toshiba Corp Fet sensor and its preparation
JPH06154963A (en) * 1992-11-19 1994-06-03 Nippon Steel Corp Remaining molten metal and remnants discharge device
JPH067905A (en) * 1993-04-02 1994-01-18 Kobe Steel Ltd Continuous casting device
WO2009078418A1 (en) * 2007-12-18 2009-06-25 Horiba, Ltd. Ion-selective electrode
US8197651B2 (en) 2007-12-18 2012-06-12 Horiba, Ltd. Ion-selective electrode
JP5009318B2 (en) * 2007-12-18 2012-08-22 株式会社堀場製作所 Ion selective electrode

Also Published As

Publication number Publication date
JPS6319817B2 (en) 1988-04-25

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