JPS6319817B2 - - Google Patents
Info
- Publication number
- JPS6319817B2 JPS6319817B2 JP55033899A JP3389980A JPS6319817B2 JP S6319817 B2 JPS6319817 B2 JP S6319817B2 JP 55033899 A JP55033899 A JP 55033899A JP 3389980 A JP3389980 A JP 3389980A JP S6319817 B2 JPS6319817 B2 JP S6319817B2
- Authority
- JP
- Japan
- Prior art keywords
- ion
- film
- sensitive
- inorganic
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Molecular Biology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3389980A JPS56130648A (en) | 1980-03-19 | 1980-03-19 | Production of ion sensor |
| GB8021027A GB2072418B (en) | 1980-03-19 | 1980-06-26 | Ion sensor and method of manufacturing the same |
| FR8014342A FR2478880A1 (fr) | 1980-03-19 | 1980-06-27 | Capteur ionique et son procede de fabrication |
| DE3024295A DE3024295C2 (de) | 1980-03-19 | 1980-06-27 | Ionenmessfühler und Verfahren zu dessen Herstellung |
| US06/163,792 US4446474A (en) | 1980-03-19 | 1980-06-27 | Ion sensor FET with surface treated metal gate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3389980A JPS56130648A (en) | 1980-03-19 | 1980-03-19 | Production of ion sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56130648A JPS56130648A (en) | 1981-10-13 |
| JPS6319817B2 true JPS6319817B2 (en, 2012) | 1988-04-25 |
Family
ID=12399366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3389980A Granted JPS56130648A (en) | 1980-03-19 | 1980-03-19 | Production of ion sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56130648A (en, 2012) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5870154A (ja) * | 1981-10-22 | 1983-04-26 | Kuraray Co Ltd | 陽イオンセンサ−の製造法 |
| JPS6270749A (ja) * | 1985-09-25 | 1987-04-01 | Toshiba Corp | Fetセンサおよびその製造方法 |
| JP2704817B2 (ja) * | 1992-11-19 | 1998-01-26 | 新日本製鐵株式会社 | 残湯残滓排出装置 |
| JPH0829403B2 (ja) * | 1993-04-02 | 1996-03-27 | 株式会社神戸製鋼所 | 連続鋳造設備 |
| EP2224234A4 (en) | 2007-12-18 | 2015-01-28 | Horiba Ltd G | ION-ELECTRODE ELECTRODE |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4020830A (en) * | 1975-03-12 | 1977-05-03 | The University Of Utah | Selective chemical sensitive FET transducers |
| JPS51126891A (en) * | 1975-04-28 | 1976-11-05 | Eiji Niki | Ion selective electrode with semiconductor crystal as the sensitive el ement |
-
1980
- 1980-03-19 JP JP3389980A patent/JPS56130648A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56130648A (en) | 1981-10-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5180680A (en) | Method of fabricating electrically erasable read only memory cell | |
| US4305802A (en) | Compound chemically sensitive element | |
| US4446474A (en) | Ion sensor FET with surface treated metal gate | |
| GB2103014A (en) | Semiconductor device responsive to ions | |
| JPH058586B2 (en, 2012) | ||
| US3632438A (en) | Method for increasing the stability of semiconductor devices | |
| US4349395A (en) | Method for producing MOS semiconductor device | |
| US5208174A (en) | Method for manufacturing a nonvolatile semiconductor memory device | |
| US4232326A (en) | Chemically sensitive field effect transistor having electrode connections | |
| JPS6319817B2 (en, 2012) | ||
| US5679590A (en) | Method for manufacturing contact hole for a nonvolatile semiconductor device | |
| KR970077363A (ko) | 박막 트랜지스터 및 그 제조 방법 | |
| JPS6319816B2 (en, 2012) | ||
| JP2546340B2 (ja) | 感湿素子およびその動作回路 | |
| JPH0518935A (ja) | ダイヤモンド薄膜イオンセンサ | |
| KR100421300B1 (ko) | 고도핑된 영역에 대해 낮은 콘택저항을 갖는 반도체 소자 | |
| JPH0740607B2 (ja) | 薄膜トランジスタの製造方法 | |
| KR100305124B1 (ko) | 붕소규화물막의확산원을갖는불순물도핑방법 | |
| JPH08340056A (ja) | シリコン系絶縁膜の形成方法と半導体装置 | |
| JPS6247251B2 (en, 2012) | ||
| JPS622266B2 (en, 2012) | ||
| JPH0311551B2 (en, 2012) | ||
| JPH01189966A (ja) | 不揮発性半導体メモリ装置 | |
| JPH0481327B2 (en, 2012) | ||
| KR970006208B1 (ko) | 반도체 소자의 제조방법 |