JPS6319817B2 - - Google Patents

Info

Publication number
JPS6319817B2
JPS6319817B2 JP55033899A JP3389980A JPS6319817B2 JP S6319817 B2 JPS6319817 B2 JP S6319817B2 JP 55033899 A JP55033899 A JP 55033899A JP 3389980 A JP3389980 A JP 3389980A JP S6319817 B2 JPS6319817 B2 JP S6319817B2
Authority
JP
Japan
Prior art keywords
ion
film
sensitive
inorganic
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55033899A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56130648A (en
Inventor
Kazumuki Yanagisawa
Takashi Mizusaki
Masayuki Matsuo
Masaki Esashi
Hiroshi Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Optical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Optical Co Ltd filed Critical Olympus Optical Co Ltd
Priority to JP3389980A priority Critical patent/JPS56130648A/ja
Priority to GB8021027A priority patent/GB2072418B/en
Priority to US06/163,792 priority patent/US4446474A/en
Priority to DE3024295A priority patent/DE3024295C2/de
Priority to FR8014342A priority patent/FR2478880A1/fr
Publication of JPS56130648A publication Critical patent/JPS56130648A/ja
Publication of JPS6319817B2 publication Critical patent/JPS6319817B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
JP3389980A 1980-03-19 1980-03-19 Production of ion sensor Granted JPS56130648A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP3389980A JPS56130648A (en) 1980-03-19 1980-03-19 Production of ion sensor
GB8021027A GB2072418B (en) 1980-03-19 1980-06-26 Ion sensor and method of manufacturing the same
US06/163,792 US4446474A (en) 1980-03-19 1980-06-27 Ion sensor FET with surface treated metal gate
DE3024295A DE3024295C2 (de) 1980-03-19 1980-06-27 Ionenmessfühler und Verfahren zu dessen Herstellung
FR8014342A FR2478880A1 (fr) 1980-03-19 1980-06-27 Capteur ionique et son procede de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3389980A JPS56130648A (en) 1980-03-19 1980-03-19 Production of ion sensor

Publications (2)

Publication Number Publication Date
JPS56130648A JPS56130648A (en) 1981-10-13
JPS6319817B2 true JPS6319817B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-04-25

Family

ID=12399366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3389980A Granted JPS56130648A (en) 1980-03-19 1980-03-19 Production of ion sensor

Country Status (1)

Country Link
JP (1) JPS56130648A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5870154A (ja) * 1981-10-22 1983-04-26 Kuraray Co Ltd 陽イオンセンサ−の製造法
JPS6270749A (ja) * 1985-09-25 1987-04-01 Toshiba Corp Ｆｅｔセンサおよびその製造方法
JP2704817B2 (ja) * 1992-11-19 1998-01-26 新日本製鐵株式会社 残湯残滓排出装置
JPH0829403B2 (ja) * 1993-04-02 1996-03-27 株式会社神戸製鋼所 連続鋳造設備
JP5009318B2 (ja) * 2007-12-18 2012-08-22 株式会社堀場製作所 イオン選択性電極

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4020830A (en) * 1975-03-12 1977-05-03 The University Of Utah Selective chemical sensitive FET transducers
JPS51126891A (en) * 1975-04-28 1976-11-05 Eiji Niki Ion selective electrode with semiconductor crystal as the sensitive el ement

Also Published As

Publication number Publication date
JPS56130648A (en) 1981-10-13

Similar Documents

Publication Publication Date Title
US5180680A (en) Method of fabricating electrically erasable read only memory cell
US4446474A (en) Ion sensor FET with surface treated metal gate
JPH058586B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US3632438A (en) Method for increasing the stability of semiconductor devices
US4349395A (en) Method for producing MOS semiconductor device
US5208174A (en) Method for manufacturing a nonvolatile semiconductor memory device
US4232326A (en) Chemically sensitive field effect transistor having electrode connections
JPS6319817B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US5679590A (en) Method for manufacturing contact hole for a nonvolatile semiconductor device
KR970077363A (ko) 박막 트랜지스터 및 그 제조 방법
JPS6319816B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2546340B2 (ja) 感湿素子およびその動作回路
JPH0518935A (ja) ダイヤモンド薄膜イオンセンサ
KR100421300B1 (ko) 고도핑된 영역에 대해 낮은 콘택저항을 갖는 반도체 소자
JPH0740607B2 (ja) 薄膜トランジスタの製造方法
KR100305124B1 (ko) 붕소규화물막의확산원을갖는불순물도핑방법
JPH08340056A (ja) シリコン系絶縁膜の形成方法と半導体装置
JPH0992738A (ja) 半導体装置およびその製造方法
JPS6247251B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS622266B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0311551B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH01189966A (ja) 不揮発性半導体メモリ装置
JPH0481327B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL8400612A (nl) Chemisch gevoelige fet-component.
JPH06318710A (ja) 不揮発性半導体記憶装置及びその製造方法