JPS63195770U - - Google Patents

Info

Publication number
JPS63195770U
JPS63195770U JP7960288U JP7960288U JPS63195770U JP S63195770 U JPS63195770 U JP S63195770U JP 7960288 U JP7960288 U JP 7960288U JP 7960288 U JP7960288 U JP 7960288U JP S63195770 U JPS63195770 U JP S63195770U
Authority
JP
Japan
Prior art keywords
crystal
layer
semiconductor
active layer
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7960288U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7960288U priority Critical patent/JPS63195770U/ja
Publication of JPS63195770U publication Critical patent/JPS63195770U/ja
Pending legal-status Critical Current

Links

JP7960288U 1988-06-16 1988-06-16 Pending JPS63195770U (enrdf_load_stackoverflow)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7960288U JPS63195770U (enrdf_load_stackoverflow) 1988-06-16 1988-06-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7960288U JPS63195770U (enrdf_load_stackoverflow) 1988-06-16 1988-06-16

Publications (1)

Publication Number Publication Date
JPS63195770U true JPS63195770U (enrdf_load_stackoverflow) 1988-12-16

Family

ID=30929617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7960288U Pending JPS63195770U (enrdf_load_stackoverflow) 1988-06-16 1988-06-16

Country Status (1)

Country Link
JP (1) JPS63195770U (enrdf_load_stackoverflow)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5096189A (enrdf_load_stackoverflow) * 1973-12-24 1975-07-31
JPS52144989A (en) * 1976-05-28 1977-12-02 Hitachi Ltd Semiconductor light emitting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5096189A (enrdf_load_stackoverflow) * 1973-12-24 1975-07-31
JPS52144989A (en) * 1976-05-28 1977-12-02 Hitachi Ltd Semiconductor light emitting device

Similar Documents

Publication Publication Date Title
US4445218A (en) Semiconductor laser with conductive current mask
JP3242963B2 (ja) レーザダイオード・導波路モノリシック集積デバイス
KR19990022008A (ko) 복합 광학적 회절 격자 결합을 가지는 ｄｆｂ 레이저 다이오드 구조물
JPS6461081A (en) Distributed-feedback type semiconductor laser and manufacture thereof
US4796274A (en) Semiconductor device with distributed bragg reflector
EP0385388A3 (en) Ridge-waveguide semiconductor laser
US4280108A (en) Transverse junction array laser
JPH0740619B2 (ja) 半導体レ−ザ装置
GB1521726A (en) Beam collimation using multiple coupled elements
JPS63195770U (enrdf_load_stackoverflow)
JPH1197795A (ja) 損失結合を伴う分散帰還レーザ
US4837775A (en) Electro-optic device having a laterally varying region
JPS6417487A (en) Semiconductor laser device
JPH06132608A (ja) 半導体レーザ及びその製造方法
JPS63213383A (ja) 半導体レ−ザ
JPS6012294Y2 (ja) 複合型光半導体素子
JPS60132380A (ja) 分布帰還型半導体レ−ザ装置
JPS5618484A (en) Manufacture of semiconductor laser
JPH04192483A (ja) 半導体アレイレーザ装置
JPS62137893A (ja) 半導体レ−ザ
JPH0358191B2 (enrdf_load_stackoverflow)
KR890004446A (ko) 선택적 에피택셜 성장을 이용한 광소자 어레이의 제조방법
KR920011003A (ko) 화합물 반도체 레이저
JPS6450591A (en) Semiconductor device and manufacture thereof
JPH02303084A (ja) 半導体レーザ装置