JPS63192203A - Thin film temperature sensor - Google Patents
Thin film temperature sensorInfo
- Publication number
- JPS63192203A JPS63192203A JP2255887A JP2255887A JPS63192203A JP S63192203 A JPS63192203 A JP S63192203A JP 2255887 A JP2255887 A JP 2255887A JP 2255887 A JP2255887 A JP 2255887A JP S63192203 A JPS63192203 A JP S63192203A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- temperature sensor
- film
- film temperature
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 21
- 239000010408 film Substances 0.000 claims description 16
- 229910000679 solder Inorganic materials 0.000 claims description 16
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 12
- 239000011888 foil Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 239000011889 copper foil Substances 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000004043 responsiveness Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 235000002597 Solanum melongena Nutrition 0.000 description 1
- 244000061458 Solanum melongena Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PCHJSUWPFVWCPO-AKLPVKDBSA-N gold-200 Chemical compound [200Au] PCHJSUWPFVWCPO-AKLPVKDBSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は薄膜温度センサに関し、特に酸化シリコン、ア
ルミナ、サファイアなどの絶縁基板の上に電極を形成し
た薄膜サーミスタと端子リード線とからなるＩ膜温度セ
ンサに係わる。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a thin film temperature sensor, and more particularly to an I.sub.thermistor comprising a thin film thermistor having an electrode formed on an insulating substrate such as silicon oxide, alumina, or sapphire, and a terminal lead wire. Related to membrane temperature sensor.
［従来の技術］
従来、薄膜温度センサを構成する＠膜す−ミスタの端子
部の加工法には、以下に列挙する種々の手段がとられて
いる。[Prior Art] Conventionally, various methods listed below have been used to process the terminal portion of a membrane mister that constitutes a thin film temperature sensor.
（１）金、アルミニウムなどのｔＩ線をワイヤーボンデ
ィングしてリード線を引出すく特開昭５５−６２４５．
特開昭５５−６２４６９）。(1) Wire bonding a tI wire made of gold, aluminum, etc. and drawing out a lead wire. JP-A-55-6245.
Japanese Patent Publication No. 55-62469).
（２）丸形又は箔状の金属線をサーミスタチップの電極
のロウ付け、又は導電性接着剤などで接続する（特開昭
５６−２６４０２）。(2) Connecting round or foil-shaped metal wires to the electrodes of the thermistor chip by brazing or using conductive adhesive (Japanese Unexamined Patent Publication No. 56-26402).
（３）基板に貫通穴を設け、ネイルヘッド状の金属ピン
を打ち込み、又はロウや導電性接着剤などで固定する（
特開昭５７−８５２０５）。(3) Make a through hole in the board and drive a nail head-shaped metal pin into it, or fix it with wax or conductive adhesive (
Japanese Patent Publication No. 57-85205).
（４）バネなどでサーミスタチップの端子を固定する（
特開昭５８−１１９６０２）。(4) Fix the thermistor chip terminal with a spring, etc. (
JP-A-58-119602).
［発明が解決しようとする問題点］
しかしながら、従来技術によれば、以下に述べる問題点
を有する。[Problems to be Solved by the Invention] However, the prior art has the following problems.
上記（１）の場合、ワイヤボンディング用の線材の太さ
は金線５Ｑ−、アルミニウム線で２００−程度が一般的
であり、振動のかかる場所で使用する場合など断線事故
を起こすことがある。また、線任が細いため外部導線へ
の接続には取扱いが困難である。In the case of (1) above, the thickness of the wire for wire bonding is generally about 5Q- gold wire or 200-mm aluminum wire, which may cause disconnection when used in places subject to vibration. In addition, since the wire length is thin, it is difficult to handle when connecting to an external conductor.
上記く２〉の場合、一般に熱応答性の良い温度センサを
作るにはサーミスタチップの大きさは非常に小さいもの
となり、端子リード線の太さもそれに合せて細くする必
要がある。このように細い線や箔などは線の強度が十分
ではなく、また２本の線が絡み合ったりして取扱いが非
常に困難である。また、エポキシ系、ポリイミド系の導
電性接着剤はその強度が年々増してきているが、セラミ
ックスとの熱膨張係数との差は大きく、厳しいヒートサ
イクルのかかる温度センサでは、接着強度の信頼性に問
題がある。In the case of item 2> above, the size of the thermistor chip is generally very small in order to make a temperature sensor with good thermal responsiveness, and the thickness of the terminal lead wire must be made thin accordingly. Such thin wires and foils do not have sufficient wire strength, and two wires may become intertwined, making it very difficult to handle them. In addition, the strength of epoxy-based and polyimide-based conductive adhesives has been increasing year by year, but the difference in thermal expansion coefficient from that of ceramics is large, and the reliability of adhesive strength may be affected in temperature sensors that undergo severe heat cycles. There's a problem.
上記（３）、（４）の場合、一般に形状は立体的になり
、薄膜サーミスタセンサの特徴である熱応答性の速さを
損う。In the cases of (3) and (4) above, the shape is generally three-dimensional, which impairs the speed of thermal response, which is a characteristic of thin film thermistor sensors.
本発明は上記事情に鑑みてなされたもので、断線事故や
接着強度の問題を解消するとともに、取扱いが容易でか
つ熱応答性を損うことがない薄膜温度センサを提供でき
る。The present invention has been made in view of the above-mentioned circumstances, and can provide a thin film temperature sensor that solves the problems of wire breakage and adhesive strength, is easy to handle, and does not impair thermal responsiveness.
［問題点を解決するための手段と作用］本発明は、少な
くともパッド部に半田と濡れやフィルム上に金属箔パタ
ーンを貼り合せた端子リード線とからなり、前記パッド
部と金属箔パターンとが半田を介して熱圧着されている
ことを要旨とする。本発明によれば、断線事故や接着強
度の問題を解消するとともに、取扱いが容易となり、し
かも熱応答性を損うこともない。[Means and effects for solving the problems] The present invention comprises a terminal lead wire having a metal foil pattern pasted on at least a solder and a film on a pad portion, and the pad portion and the metal foil pattern are bonded together. The gist is that they are bonded by thermocompression via solder. According to the present invention, problems such as disconnection accidents and adhesive strength are eliminated, handling becomes easy, and thermal responsiveness is not impaired.
［実施例］
以下、本発明の一実茄例を第１図〜第３図を参照して説
明する。ここで、第１図は本発明に係る薄膜温度センサ
の断面図、第２図は同センサの薄膜サーミスタチップの
平面図、第３図は同センサの端子リード線の平面図であ
る。[Example] Hereinafter, an eggplant example of the present invention will be described with reference to FIGS. 1 to 3. Here, FIG. 1 is a sectional view of a thin film temperature sensor according to the present invention, FIG. 2 is a plan view of a thin film thermistor chip of the sensor, and FIG. 3 is a plan view of a terminal lead wire of the sensor.
図中の１は、薄膜サーミスタチップ（以下、チップとい
う）である。このチップ１は、シリコン基板上に熱醇化
膜を形成した絶縁性基板２と、この絶縁性基板２上に形
成されパッド部３ａ、クシ型部３ｂからなる電極３と、
この電極３のクシ型部３ｂを覆うように設けられ表面に
保護膜（図示せず）を形成してなるサーミスタ薄膜４と
、半田に濡れやすい膜としてのニッケルｌ！ｉ１５とか
ら構成されている。なお、前記電極３は白金層及びクロ
ム層の２層からなる。前記チップ１には、半田層６を介
して端子リード線７が電気的に接続されている。ここで
、この端子リード線７はポリイミドフィルム８上に銅箔
パターン９を形成した構造となっており、回路基板（図
示せず）に接続される。1 in the figure is a thin film thermistor chip (hereinafter referred to as a chip). This chip 1 includes an insulating substrate 2 in which a hot-melting film is formed on a silicon substrate, an electrode 3 formed on the insulating substrate 2 and consisting of a pad portion 3a and a comb-shaped portion 3b.
A thermistor thin film 4 provided to cover the comb-shaped portion 3b of the electrode 3 and having a protective film (not shown) formed on the surface, and a nickel l! i15. Note that the electrode 3 consists of two layers: a platinum layer and a chromium layer. A terminal lead wire 7 is electrically connected to the chip 1 via a solder layer 6. Here, this terminal lead wire 7 has a structure in which a copper foil pattern 9 is formed on a polyimide film 8, and is connected to a circuit board (not shown).
また、端子リード線７の５ｉ箔パターン９の端部と前記
デツプ１のパッド部２ａは、前記半田層６を介して熱圧
着されている。Further, the end portion of the 5i foil pattern 9 of the terminal lead wire 7 and the pad portion 2a of the depth 1 are bonded by thermocompression via the solder layer 6.
次に、こうした構造の薄膜温度センサの製法について説
明する。Next, a method for manufacturing a thin film temperature sensor having such a structure will be explained.
■まず、シリコン基板の上に熱酸化膜を形成した絶縁性
基板２を準備し、この絶縁性基板２上にフォトリソグラ
フィーを用いてパッド部３ａ及びクシ型部３ｂからなる
電極３を形成した。なお、この時、電極ｏｎとしては化
学的安定性と、熱膨張係数がサーミスタ材料に近いこと
を考慮して白金を用いた。(2) First, an insulating substrate 2 on which a thermal oxide film was formed on a silicon substrate was prepared, and an electrode 3 consisting of a pad portion 3a and a comb-shaped portion 3b was formed on this insulating substrate 2 using photolithography. At this time, platinum was used as the electrode in consideration of its chemical stability and thermal expansion coefficient close to that of the thermistor material.
■次に、前記チップ１のパッド部３ａ上にニッケル膜５
をフォトリソグラフィーにより形成した。■Next, a nickel film 5 is placed on the pad portion 3a of the chip 1.
was formed by photolithography.
ここで、ニッケル膜の厚みは例えば５０００人である。Here, the thickness of the nickel film is, for example, 5000.
■次いで、前記チップ１のクシ型部３ｂ上に、表面に保
護膜を有したサーミスタ薄膜４を形成した。(2) Next, on the comb-shaped portion 3b of the chip 1, a thermistor thin film 4 having a protective film on its surface was formed.
■一方、外部リード線７はζポリイミドフィルム８上に
２枚の銅箔パターン９．９を前記パッド部３ａ、３ａの
間隔と合うように貼り合せて形成した。(2) On the other hand, the external lead wire 7 was formed by pasting two copper foil patterns 9.9 on the ζ polyimide film 8 so as to match the spacing between the pad portions 3a, 3a.
■この後、前記チップ１のパッド部３ａ、３ａ上に半田
層６をのせ、ヒータで短時間加熱してニッケルｌ１Ｉ５
と半田層６とを接続させる。■After this, a solder layer 6 is placed on the pad portions 3a, 3a of the chip 1, and heated for a short time with a heater to form a nickel l1I5
and the solder layer 6 are connected.
■最後に、前記パッド部３ａ、３ａにニッケル膜５及び
半田層６を介して外部リード線７の銅箔パターン９，９
とを重ね合せ、上から例えば半田ゴテで加熱しながら押
汗し、銅箔パターン９と半田層６とを接続する。この方
法で端子引張り強度は１ｋＱ以上（電極パッド面ｆＡ０
．８Ｘ０．７ｎ＋ｌ０２）を得た。また、パッド部３ａ
の先端を予め半田層でメッキしておくと、熱圧着は更に
容易となる。■Finally, the copper foil patterns 9, 9 of the external lead wires 7 are placed on the pad portions 3a, 3a via the nickel film 5 and the solder layer 6.
The copper foil pattern 9 and the solder layer 6 are connected to each other by stacking them one on top of the other and applying heat from above using, for example, a soldering iron. With this method, the terminal tensile strength is 1kQ or more (electrode pad surface fA0
．． 8×0.7n+102) was obtained. In addition, the pad portion 3a
If the tip is plated with a solder layer in advance, thermocompression bonding will be easier.
しかして、第１図に示す構造の薄膜温度センサによれば
、薄膜サーミスタチップ１の電極３のパッド部３ａ上に
ニッケルｌｌ１５を設け、前記パッド部３ａと端子リー
ド線７の銅箔パターン９とを半田層６を介して熱圧着し
た構造となっているため、以下に列挙する効果を有する
。According to the thin film temperature sensor having the structure shown in FIG. Since it has a structure in which it is thermocompression bonded through the solder layer 6, it has the following effects.
（イ）全体として非常に薄い薄膜温度センサができ、種
々な用途のアセンブリにおいて薄膜サーミスタチップ１
と被測定物との密着性を良くすることができる。(b) A very thin thin film temperature sensor can be created as a whole, and the thin film thermistor chip 1 can be used in assemblies for various applications.
It is possible to improve the adhesion between the material and the object to be measured.
（ロ）２本の銅箔パターン９，９が１枚のポリイミドフ
ィルム８上に形成されているため、配線の間違いや銅箔
パターン９．９同志のからみ合いなどが防止でき、アセ
ンブリが容易である。(b) Since the two copper foil patterns 9 and 9 are formed on one polyimide film 8, wiring errors and entanglement of the copper foil patterns 9 and 9 can be prevented, and assembly is easy. be.
（ハ）銅箔パターン９の強度はほとんどポリイミドフィ
ルムが担うため、断線事故を防止できる。(c) Since the strength of the copper foil pattern 9 is mostly provided by the polyimide film, disconnection accidents can be prevented.
（ニ）電極パターン３のパターンを変えることにより、
多様なアセンブリに対応できる。(d) By changing the pattern of electrode pattern 3,
Can accommodate a variety of assemblies.
（ホ）ニッケル膜５をパッド部３ａ上に形成した状態で
パッド部３ａと銅箔パターン９とを半田層６を介して熱
圧着するため、パッド部３ａと半田層６とが強固に接続
される。(e) Since the pad portion 3a and the copper foil pattern 9 are bonded by thermocompression via the solder layer 6 with the nickel film 5 formed on the pad portion 3a, the pad portion 3a and the solder layer 6 are firmly connected. Ru.
なお、上記実施例では、半田に濡れやすい膜としてニッ
ケル膜を用いたが、これに限定されるものではなく、錫
、銀、金、パラジウム、銅等でもよい。また、ニッケル
膜は上記実施例の如くパッド部上のみならず、例えばク
シ型部上に延出して形成してもよい。In the above embodiment, a nickel film is used as a film that is easily wetted by solder, but the film is not limited to this, and may be tin, silver, gold, palladium, copper, or the like. Further, the nickel film may be formed not only on the pad portion as in the above embodiment, but also extending over, for example, the comb-shaped portion.
〔発明の効果コ
以上詳述した如く本発明によれば、断線事故や接着強度
の問題を解消するとともに、取扱いが容易でかつ熱応答
性を損うことがない信頼性の高い薄膜温度センサを提供
できる。[Effects of the Invention] As detailed above, according to the present invention, a highly reliable thin film temperature sensor that is easy to handle and does not impair thermal responsiveness, which eliminates problems such as disconnection accidents and adhesive strength, is provided. Can be provided.
第１図は本発明の一実施例に係る薄膜温度センサの断面
図、第２図は同センサの７ＩＪＩｌ！Ｊサーミスクチツ
プの平面図、第３図は同センサの端子リード線の平面図
である。
１・・・薄膜サーミスタチップ、２・・・絶縁性基板、
３・・・電極、３ａ・・・パッド部、３ｂ・・・クシ型
部、４・・・サーミスタ薄膜、５・・・ニッケル膜、６
・・・半田層、７・・・端子リード線、・・・ポリイミ
ドフィルム、９・・・銅箔パターン。
出願人代理人 弁理士 鈴江武彦
第 ３ 図FIG. 1 is a sectional view of a thin film temperature sensor according to an embodiment of the present invention, and FIG. 2 is a 7IJIl! of the same sensor. A plan view of the J-thermistic chip, and FIG. 3 is a plan view of the terminal lead wire of the same sensor. 1... Thin film thermistor chip, 2... Insulating substrate,
3... Electrode, 3a... Pad part, 3b... Comb-shaped part, 4... Thermistor thin film, 5... Nickel film, 6
...Solder layer, 7...Terminal lead wire,...Polyimide film, 9...Copper foil pattern. Applicant's agent Patent attorney Takehiko Suzue Figure 3
Claims (1)
薄膜サーミスタチップと、樹脂フィルム上に金属箔パタ
ーンを貼り合せた端子リード線とからなり、前記パッド
部と金属箔パターンとが半田を介して熱圧着されている
ことを特徴とする薄膜温度センサ。It consists of a thin film thermistor chip with a film easily wetted with solder formed on at least a pad part, and a terminal lead wire with a metal foil pattern pasted on a resin film, and the pad part and the metal foil pattern are bonded by thermocompression via solder. A thin film temperature sensor characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2255887A JPS63192203A (en) | 1987-02-04 | 1987-02-04 | Thin film temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2255887A JPS63192203A (en) | 1987-02-04 | 1987-02-04 | Thin film temperature sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63192203A true JPS63192203A (en) | 1988-08-09 |
| JPH0381281B2 JPH0381281B2 (en) | 1991-12-27 |
Family
ID=12086186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2255887A Granted JPS63192203A (en) | 1987-02-04 | 1987-02-04 | Thin film temperature sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63192203A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999046570A1 (en) * | 1998-03-12 | 1999-09-16 | Yamatake Corporation | Sensor and method of producing the same |
| JP2006258520A (en) * | 2005-03-16 | 2006-09-28 | Ishizuka Electronics Corp | Probe for electronic clinical thermometer |
| JP2012182258A (en) * | 2011-02-28 | 2012-09-20 | Mitsubishi Materials Corp | Non-contact power supply device with temperature sensor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1267107A (en) * | 1969-11-25 | 1972-03-15 | ||
| JPS55162903U (en) * | 1979-05-09 | 1980-11-22 |
-
1987
- 1987-02-04 JP JP2255887A patent/JPS63192203A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1267107A (en) * | 1969-11-25 | 1972-03-15 | ||
| JPS55162903U (en) * | 1979-05-09 | 1980-11-22 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999046570A1 (en) * | 1998-03-12 | 1999-09-16 | Yamatake Corporation | Sensor and method of producing the same |
| US6382030B1 (en) | 1998-03-12 | 2002-05-07 | Yamatake Corporation | Sensor and method of producing the same |
| JP2006258520A (en) * | 2005-03-16 | 2006-09-28 | Ishizuka Electronics Corp | Probe for electronic clinical thermometer |
| JP2012182258A (en) * | 2011-02-28 | 2012-09-20 | Mitsubishi Materials Corp | Non-contact power supply device with temperature sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0381281B2 (en) | 1991-12-27 |
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