JPS63191628U - - Google Patents

Info

Publication number
JPS63191628U
JPS63191628U JP1988059305U JP5930588U JPS63191628U JP S63191628 U JPS63191628 U JP S63191628U JP 1988059305 U JP1988059305 U JP 1988059305U JP 5930588 U JP5930588 U JP 5930588U JP S63191628 U JPS63191628 U JP S63191628U
Authority
JP
Japan
Prior art keywords
plasma
chamber
plasma etching
photoresist
indicative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1988059305U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS63191628U publication Critical patent/JPS63191628U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
    • G01N21/76—Chemiluminescence; Bioluminescence

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Drying Of Semiconductors (AREA)

Description

【図面の簡単な説明】
第１図は本考案の制御システムの一実施例の図
、第２図はプラズマの光度対時間特性を例示する
図である。第３図Ａ，Ｂ，Ｃ，Ｄ，Ｅは本考案を
説明するためのプラズマエツチングプロセスを示
す。 １１……チヤンバ、１２〜１５……電極、１６
……ウエーハ、１８……フオトセル、１９……電
流／電圧変換回路、２１……記録計、２２……電
圧計、２３……制御回路、２４……Ｒ．Ｆ．発生
回路。

Claims (1)

  1. 【実用新案登録請求の範囲】 エツチヤントガス及びエツチすべき物質を収容
    する排気可能なチヤンバ及び該チヤンバ内部に結
    合してプラズマを維持する無線周波数エネルギー
    源を有するプラズマエツチングを介してフオトレ
    ジストを生成する装置において、 前記チヤンバ内部に光学的に結合して前記プラ
    ズマの光度を示す種々のレベルの出力信号を発生
    するフオトデテクタ手段、及び、 生成されるフオトレジストを示す前記出力信号
    のレベル中の一時的な平坦特性を検出する検出手
    段、 を具えたことを特徴とするプラズマエツチング
    装置。
JP1988059305U 1979-01-02 1988-04-30 Pending JPS63191628U (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/000,472 US4246060A (en) 1979-01-02 1979-01-02 Plasma development process controller

Publications (1)

Publication Number Publication Date
JPS63191628U true JPS63191628U (ja) 1988-12-09

Family

ID=21691658

Family Applications (2)

Application Number Title Priority Date Filing Date
JP16805979A Pending JPS5591829A (en) 1979-01-02 1979-12-24 Plasma producing process controller
JP1988059305U Pending JPS63191628U (ja) 1979-01-02 1988-04-30

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP16805979A Pending JPS5591829A (en) 1979-01-02 1979-12-24 Plasma producing process controller

Country Status (4)

Country Link
US (1) US4246060A (ja)
EP (1) EP0013483B1 (ja)
JP (2) JPS5591829A (ja)
DE (1) DE2967121D1 (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157233A (en) * 1979-05-28 1980-12-06 Hitachi Ltd Method and apparatus for monitoring etching
US4377436A (en) * 1980-05-13 1983-03-22 Bell Telephone Laboratories, Incorporated Plasma-assisted etch process with endpoint detection
FR2487574A1 (fr) * 1980-07-24 1982-01-29 Efcis Procede et dispositif d'attaque sous plasma d'une couche mince
US4394237A (en) * 1981-07-17 1983-07-19 Bell Telephone Laboratories, Incorporated Spectroscopic monitoring of gas-solid processes
US4529860A (en) * 1982-08-02 1985-07-16 Motorola, Inc. Plasma etching of organic materials
US4482424A (en) * 1983-05-06 1984-11-13 At&T Bell Laboratories Method for monitoring etching of resists by monitoring the flouresence of the unetched material
US4496448A (en) * 1983-10-13 1985-01-29 At&T Bell Laboratories Method for fabricating devices with DC bias-controlled reactive ion etching
US4943336A (en) * 1988-08-18 1990-07-24 Ernest Csont Apparatus and method for fabricating composite panels for use in concrete buildings
JP3093215B2 (ja) * 1989-06-20 2000-10-03 東京エレクトロン株式会社 現像方法および現像装置
EP0662241A1 (en) * 1993-04-28 1995-07-12 Applied Materials, Inc. Method and apparatus for etchback endpoint detection
KR100257811B1 (ko) * 1997-10-24 2000-06-01 구본준 액정표시장치의 기판의 제조방법
TW524888B (en) * 2000-02-01 2003-03-21 Winbond Electronics Corp Optical temperature measurement as an in-situ monitor of etch rate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135639A (ja) * 1974-09-20 1976-03-26 Hitachi Ltd Himakunopurazumaetsuchingushorishutenkenshutsuho
JPS5188181A (ja) * 1975-01-20 1976-08-02
JPS5326674A (en) * 1976-08-25 1978-03-11 Hitachi Ltd Plasma etching

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3664942A (en) * 1970-12-31 1972-05-23 Ibm End point detection method and apparatus for sputter etching
DE2603675A1 (de) * 1976-01-31 1977-08-04 Leybold Heraeus Gmbh & Co Kg Verfahren zur kontrolle des abtragens einer duennen schicht oder durch masken bestimmter schichtbereiche mit hilfe des ionen-aetzens
DE2651187A1 (de) * 1976-11-10 1978-05-18 Kuhlmann Schaefer Wilhelm Verfahren und vorrichtung zum abtragen von schichten

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135639A (ja) * 1974-09-20 1976-03-26 Hitachi Ltd Himakunopurazumaetsuchingushorishutenkenshutsuho
JPS5188181A (ja) * 1975-01-20 1976-08-02
JPS5326674A (en) * 1976-08-25 1978-03-11 Hitachi Ltd Plasma etching

Also Published As

Publication number Publication date
JPS5591829A (en) 1980-07-11
US4246060A (en) 1981-01-20
EP0013483B1 (en) 1984-07-18
EP0013483A1 (en) 1980-07-23
DE2967121D1 (en) 1984-08-23

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