JPS63189252A - Thermal head - Google Patents
Thermal headInfo
- Publication number
- JPS63189252A JPS63189252A JP2129887A JP2129887A JPS63189252A JP S63189252 A JPS63189252 A JP S63189252A JP 2129887 A JP2129887 A JP 2129887A JP 2129887 A JP2129887 A JP 2129887A JP S63189252 A JPS63189252 A JP S63189252A
- Authority
- JP
- Japan
- Prior art keywords
- heat
- thermal head
- resin layer
- resistant resin
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920001721 polyimide Polymers 0.000 claims abstract description 36
- 229920006015 heat resistant resin Polymers 0.000 claims abstract description 25
- 239000009719 polyimide resin Substances 0.000 claims abstract description 23
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229920005575 poly(amic acid) Polymers 0.000 claims abstract description 13
- 150000003949 imides Chemical class 0.000 claims abstract description 10
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims abstract description 9
- JVERADGGGBYHNP-UHFFFAOYSA-N 5-phenylbenzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(=O)O)=CC(C=2C=CC=CC=2)=C1C(O)=O JVERADGGGBYHNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000007259 addition reaction Methods 0.000 claims abstract description 8
- 238000007142 ring opening reaction Methods 0.000 claims abstract description 8
- 238000007363 ring formation reaction Methods 0.000 claims abstract description 6
- 238000006243 chemical reaction Methods 0.000 claims abstract description 4
- 239000004020 conductor Substances 0.000 claims abstract description 4
- 229920005989 resin Polymers 0.000 claims abstract 5
- 239000011347 resin Substances 0.000 claims abstract 5
- 238000010438 heat treatment Methods 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 16
- 239000004642 Polyimide Substances 0.000 claims description 13
- -1 biphenyltetracarboxylic anhydride Chemical class 0.000 claims description 8
- 150000004985 diamines Chemical class 0.000 claims description 6
- 230000018044 dehydration Effects 0.000 claims description 4
- 238000006297 dehydration reaction Methods 0.000 claims description 4
- 239000004202 carbamide Substances 0.000 claims description 3
- 125000000962 organic group Chemical group 0.000 claims description 3
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 claims description 2
- LVACOMKKELLCHJ-UHFFFAOYSA-N 3-trimethoxysilylpropylurea Chemical compound CO[Si](OC)(OC)CCCNC(N)=O LVACOMKKELLCHJ-UHFFFAOYSA-N 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 125000002947 alkylene group Chemical group 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims 4
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000006210 cyclodehydration reaction Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000002966 varnish Substances 0.000 abstract description 7
- 239000003960 organic solvent Substances 0.000 abstract description 5
- 239000000203 mixture Substances 0.000 abstract description 2
- 239000011324 bead Substances 0.000 abstract 1
- 230000032798 delamination Effects 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 10
- 125000003118 aryl group Chemical group 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000003064 anti-oxidating effect Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
Abstract
Description
【発明の詳細な説明】
[発明の目的]
(産業上の利用分野)
本発明は、金属支持体上にイミド成分を含有する耐熱樹
脂層を形成し、この耐熱樹脂層上に多数の発熱抵抗体を
形成してなるサーマルヘッドに関する。Detailed Description of the Invention [Objective of the Invention] (Industrial Application Field) The present invention involves forming a heat-resistant resin layer containing an imide component on a metal support, and forming a large number of heat-generating resistors on this heat-resistant resin layer. It relates to a thermal head formed by a body.
(従来の技術)
近年、サーマルヘッドは、受音、省保守、低ランニング
コスト等の利点を生かして、ファクシミリ、ワードプロ
セッサ用プリンタ等の各種記録装置に多用されるように
なってきている。−・方、これらのlit器は小形化、
低価格化が要請されており、このため丈−ンルヘッドに
も小型で安価なものが望まれている。(Prior Art) In recent years, thermal heads have come to be widely used in various recording devices such as facsimiles and word processor printers, taking advantage of their advantages such as sound reception, reduced maintenance, and low running costs. - On the other hand, these lit devices are smaller,
There is a demand for lower prices, and for this reason, there is a desire for long length heads to be small and inexpensive.
ところで従来のサーマルヘッドは、AJ2203純度が
90%以上のアルミナセラミック基板の上にグレーズガ
ラス層を形成し、その上に多数の発熱体と、この発熱体
に接続された導電体を形成してなるものが多用されてい
た。しかしながらこのようなサーマルヘッドに用いられ
るセラミック基板は、その製造に際して、原料粉末から
アルカリ金属成分を除去する処理、高温焼成、高温焼成
時に生じた基板の反りをとるための仕上げの研摩等の多
くの工程を必要とするため生産コストが高くなるという
問題があった。By the way, conventional thermal heads are made by forming a glazed glass layer on an alumina ceramic substrate with an AJ2203 purity of 90% or more, and forming a large number of heating elements and conductors connected to the heating elements on top of the glazed glass layer. Things were used a lot. However, the ceramic substrates used in such thermal heads undergo many processes during manufacturing, such as processing to remove alkali metal components from raw powder, high-temperature firing, and finishing polishing to remove warping of the substrate that occurs during high-temperature firing. There was a problem in that the production cost was high because it required a process.
このため、最近、金mW板上に熱の放散および蓄熱をコ
ントロールする保温層としてポリイミド樹脂層を形成し
、このポリイミド樹脂層上に多数の発熱抵抗体を形成し
てなる小型で安価なサーマルヘッドが提案されている(
昭和61年度電子通信学会総合全国大会概要集(198
B)、 1−125および5゜−126)。For this reason, recently, a polyimide resin layer is formed on a gold mW plate as a heat insulating layer to control heat dissipation and heat accumulation, and a large number of heating resistors are formed on this polyimide resin layer to produce a small and inexpensive thermal head. has been proposed (
Collection of summaries of the 1986 IEICE Comprehensive National Conference (198
B), 1-125 and 5°-126).
このように金属基板上に耐熱性に優れたポリイミド樹脂
層を形成し、この上に発熱抵抗体を形成してなるサーマ
ルヘッドは、従来のアルミナM根上にグレーズガラス層
を形成してなる樋板を用いたサーマルヘッドと比較して
、熱効率に優れ、しかも曲げ加工が可能で小型化し易い
という特長を有しており、今後小型で安価な高性能の1
ノーマルヘツドとして有望視されている。The thermal head, which is made by forming a polyimide resin layer with excellent heat resistance on a metal substrate and forming a heating resistor on top of it, is similar to the conventional gutter plate which is made by forming a glazed glass layer on an alumina M base. Compared to thermal heads using
It is considered promising as a normal head.
ところがこのポリイミド樹脂層を用いたサーマルヘッド
では、ポリイミド樹脂が耐熱性に極めて優れている特長
を有する半面、金属支持体J3よぴ発熱抵抗体との密着
性に乏しく、このため後工程や使用中にはがれが生じ易
いという問題があった。However, in the thermal head using this polyimide resin layer, although the polyimide resin has the feature of extremely excellent heat resistance, it has poor adhesion with the metal support J3 and the heating resistor, and as a result, it has poor adhesion with the metal support J3 and the heating resistor, so it is difficult to use in post-processing or during use. There was a problem that peeling easily occurred.
(発明が解決しようとする問題点)
このようにポリイミド樹脂層上に多数の発熱抵抗体を形
成してなるサーマルヘッドでは、ポリイミド樹脂が極め
て耐熱性に優れ、熱効率に優れ、また曲げ加工が可能で
小型化し易いという長所を有する半面、後工程や使用中
にはがれが生じ易いという問題があった。(Problems to be Solved by the Invention) In the thermal head in which a large number of heating resistors are formed on a polyimide resin layer, the polyimide resin has extremely high heat resistance and thermal efficiency, and can be bent. Although it has the advantage of being easily miniaturized, it has the problem that it tends to peel off during post-processing or during use.
本発明者等は、このような欠点を解消1べく鋭意研究を
すすめたところ、ビフェニルテトラカルボン酸二無水物
とp−フェニレンジアミンより得られた芳香族ポリイミ
ドは、耐熱性に優れ、しがも金属支持体の熱膨張率に近
い熱膨張率を有することを見出した。しかしながらこの
芳香族ポリイミドはこのようなサーマルヘッドに適した
特性を有する半面、金属支持体との密着性が不十分であ
るという問題がある。The present inventors conducted intensive research to eliminate these drawbacks, and found that an aromatic polyimide obtained from biphenyltetracarboxylic dianhydride and p-phenylenediamine has excellent heat resistance and It has been found that the thermal expansion coefficient is close to that of the metal support. However, although this aromatic polyimide has properties suitable for such a thermal head, it has a problem of insufficient adhesion to a metal support.
本発明者等はさらにこの点を改善すべく研究をずすめ、
この問題はp−フェニレンジアミンの一部をSi基を有
するp−フェニレンジアミンで置き代えることにより大
幅に改善されることを見出した。The present inventors further conducted research to improve this point,
It has been found that this problem can be significantly improved by replacing a portion of p-phenylenediamine with p-phenylenediamine having a Si group.
本発明はかかる知見に基いてなされたもので、金属基板
上に熱の放散および蓄熱をコントロールする保温層とし
て設けた耐熱樹脂層と金属支持体および発熱抵抗体との
密着性を向上させた、熱効率に優れ曲げ加工が可能で小
型化しやすく、安価で高性能のサーマルヘッドを提供す
ることを目的としている。The present invention was made based on this knowledge, and improves the adhesion between the heat-resistant resin layer provided on the metal substrate as a heat-retaining layer for controlling heat dissipation and heat accumulation, and the metal support and heating resistor. The aim is to provide a low-cost, high-performance thermal head that has excellent thermal efficiency, can be bent, is easily miniaturized, and has excellent thermal efficiency.
[発明の構成]
(問題点を解決するための手段)
本発明のサーマルヘッドは、金属支持体と、この金属支
持体上に形成されたイミド成分を含有する耐熱樹脂層と
、このイミド成分を含有する耐熱樹脂層上に形成された
多数の発熱抵抗体と、これら各発熱抵抗体に接続された
導電体とを備えてなるサーマルヘッドにおいて、前記イ
ミド成分を含有する耐熱樹脂層が、ビフェニルテトラカ
ルボン酸二無水物とp−フェニレンジアミンの反応によ
り得られたポリイミド系樹脂であり、かつ少なくとも前
記イミド成分を含有する耐熱樹脂層の金属支持体側がこ
のポリイミド系樹脂の主鎖の一部にSi基を有するポリ
イミド系樹脂からなることを特徴としている。[Structure of the Invention] (Means for Solving the Problems) The thermal head of the present invention includes a metal support, a heat-resistant resin layer containing an imide component formed on the metal support, and a heat-resistant resin layer containing the imide component. In a thermal head comprising a large number of heating resistors formed on a heat-resistant resin layer containing a heat-resistant resin layer and a conductor connected to each heat-generating resistor, the heat-resistant resin layer containing an imide component contains biphenyl tetrafluoride. This is a polyimide resin obtained by the reaction of carboxylic dianhydride and p-phenylenediamine, and the metal support side of the heat-resistant resin layer containing at least the imide component has Si in a part of the main chain of the polyimide resin. It is characterized by being made of a polyimide resin having a group.
本発明に使用される芳香族ポリイミド樹脂は、p−フェ
ニレンジアミンとビフェニルテトラカルボン酸二無水物
との当量混合物を有機溶剤中で開環付加反応させ、得ら
れたポリアミック酸溶液からなるワニスを塗布し脱水環
化させることにより得られる。The aromatic polyimide resin used in the present invention is prepared by subjecting an equivalent mixture of p-phenylene diamine and biphenyltetracarboxylic dianhydride to a ring-opening addition reaction in an organic solvent, and applying a varnish made of the resulting polyamic acid solution. It can be obtained by dehydration and cyclization.
この分子構造中にSi基を導入するには、開環付加反応
時に、p−フェニレンジアミンの一部として例えば、
一般式
%式%
(式中、Rはアルキレン基のような2価の有機基、R′
はアルキル基のような1価の有inを示す。)で表わさ
れるビスアミノジシロキサン、例えばビスアミノプロピ
ルテトラメチルジシロキサンを用いることにより得られ
る。In order to introduce a Si group into this molecular structure, as part of p-phenylenediamine during the ring-opening addition reaction, for example, the general formula % formula % (where R is a divalent organic group such as an alkylene group , R'
represents a monovalent in such as an alkyl group. ), such as bisaminopropyltetramethyldisiloxane.
なおビスアミノジシロキサンのような5illを有する
ジアミンの配合量は全ジアミン成分中の10モル%以下
とすることが望ましい。Note that the amount of diamine having 5ill such as bisaminodisiloxane is desirably 10 mol % or less based on the total diamine component.
さらに本発明においては、上記の開環付加反応時に得ら
れる芳香族ポリイミドの上記の優れた耐熱性、または金
属支持体との優れた密着性を実質的に損わない範凹で、
p−フェニレンジアミンの一部を他の芳香族ジアミンで
置き代えたり、ビフ℃ニルテトラカルボン酸無水物の一
部を他の芳香族テトラカルボン酸無水物またはジカルボ
ン酸で置き代えることも可能である。Furthermore, in the present invention, in a range that does not substantially impair the excellent heat resistance of the aromatic polyimide obtained during the ring-opening addition reaction or the excellent adhesion with the metal support,
It is also possible to replace a part of p-phenylenediamine with other aromatic diamines, or to replace a part of biphenyltetracarboxylic acid anhydride with other aromatic tetracarboxylic acid anhydrides or dicarboxylic acids. .
また、本発明においては芳香族ポリイミド中にシランカ
ップリング剤を添加することにより金属支持体および発
熱抵抗体、とりわけ発熱抵抗体との接着性をさらに向上
すざ「ることができる。Furthermore, in the present invention, by adding a silane coupling agent to the aromatic polyimide, it is possible to further improve the adhesion between the metal support and the heating resistor, especially the heating resistor.
このようなシランカップリング剤としては、例えばγ−
アミノプロピルトリエトキシシラン、N−フェニル−γ
−アミノプロピルトリメトキシシランのようなアミノ結
合を有するシラン化合物やγ−ウレイドプロピルトリメ
1−キシシランのような尿素結合を有するシラン化合物
が挙げられる。Examples of such silane coupling agents include γ-
Aminopropyltriethoxysilane, N-phenyl-γ
Examples include silane compounds having an amino bond such as -aminopropyltrimethoxysilane and silane compounds having a urea bond such as γ-ureidopropyltrimethoxysilane.
これらのシランカップリング剤は、開環付加反応の終了
した芳香族ポリアミック酸、または主鎖にSi基を有す
る芳香族ポリアミック酸中に任意の比率でその1種また
は2種以上が添加、混合される。One or more of these silane coupling agents can be added and mixed in any ratio into an aromatic polyamic acid that has undergone a ring-opening addition reaction, or an aromatic polyamic acid having a Si group in its main chain. Ru.
なおシランカップリング剤の添加量は、耐熱樹脂層中に
0.05〜10重間%程度とすることが望ましい。The amount of the silane coupling agent added to the heat-resistant resin layer is preferably about 0.05 to 10% by weight.
本発明のサーマルヘッドにおける耐熱樹脂層は、上記の
ワニスを1種または2種以上使い分けることにより、例
えば第2図および下記するように、金属支持体、例えば
金属基板1上に次のような積層構造で形成することがで
きる。The heat-resistant resin layer in the thermal head of the present invention can be formed by selectively using one or more of the above varnishes to form the following laminated layer on a metal support, for example, the metal substrate 1, as shown in FIG. Can be formed in a structure.
li叉亘1」 弘皿1 &1藍五11(a)
・・・・・・・・・・・・・・・・・・Pi(Si)+
Si ・・・・・・・・・・・・・・・・・・(b)
・・・・・・Pi(Si)・・・・・・
・・・・・・・・・Pi・・・・・・・・・(C)
・・・・・・Pi(Si)・・・・・・ ・・
・・・・・・・Pi+Si ・・・(d) ・
・・・・・Pi(Si)・・・・・・ ・
・・・・・Pi(Si)+Si ・・・(8)
・・・Pi(Si)÷Si ・・・ ・・・・
・・・・・Pi・・・・・・・・・(f) ・・・
Pi(Si)+Si ・・・ ・・・・・・・
・・Pi+Si ・・・・・・Pi(Si)+Si
: 3 i基が導入され、シランカップリング剤を含
むポリイミド
Pi(Si) : S i基が導入されたポリイミドP
i+Si ニジランカップリング剤を含むポリイミド
Pi:SiJJが導入されず、シランカップリング剤を
含まないポリイミド
これらの層構造は、各ワニスの塗布乾燥を繰返し行うこ
とにより形成される。li 叉亘1” Hirosara 1 &1 Aigo 11 (a)
・・・・・・・・・・・・・・・Pi(Si)+
Si ・・・・・・・・・・・・・・・・・・(b)
・・・・・・Pi(Si)・・・・・・
・・・・・・・・・Pi・・・・・・・・・(C)
・・・・・・Pi(Si)・・・・・・
・・・・・・Pi+Si ・・・(d) ・
・・・・・・Pi(Si)・・・・・
...Pi(Si)+Si...(8)
・・・Pi(Si)÷Si ・・・ ・・・・
・・・・・・Pi・・・・・・・・・(f) ・・・
Pi(Si)+Si ・・・・・・・・・
・・Pi+Si ・・・・・・Pi(Si)+Si
: Polyimide Pi(Si) into which 3 i groups are introduced and contains a silane coupling agent : Polyimide P into which Si groups are introduced
i+Si Polyimide containing silane coupling agent Pi: Polyimide in which SiJJ is not introduced and does not contain silane coupling agent These layer structures are formed by repeatedly applying and drying each varnish.
(作用)
本発明のサーマルヘッドにおいては、耐熱樹脂層を、金
属支持体との密着性の良好な、分子構造中にSi基を有
する耐熱樹脂により形成しているので、金属支持体との
熱膨張係数の差により発生ずる界面応力に起因するはが
れを有効に防止することができる。(Function) In the thermal head of the present invention, the heat-resistant resin layer is formed of a heat-resistant resin having Si groups in its molecular structure and has good adhesion to the metal support. Peeling caused by interfacial stress caused by the difference in expansion coefficients can be effectively prevented.
(実施例) 以下、本発明の実施例を図面を参照しながら説明する。(Example) Embodiments of the present invention will be described below with reference to the drawings.
この実施例のサーマルヘッドは、Fe合金からなる金属
基板1上に、(I)式で表される5iJ3を導入したポ
リアミック酸を有機溶剤に溶解させたポリイミドワニス
と、(I[)式で表されるポリアミック酸を有機溶剤に
溶解させこれにシランカップリング剤を添加してなるポ
リイミドワニスとを重ね塗りして、厚さ5〜100μm
、好ましくは10〜50μ爾の耐熱樹脂層2が形成され
、その上にTa−8iO2、Cr−SiOz、−ri−
8io2等からなる発熱抵抗体3が形成されている。The thermal head of this example consists of a metal substrate 1 made of an Fe alloy, a polyimide varnish made by dissolving polyamic acid represented by the formula (I) into which 5iJ3 is dissolved in an organic solvent, and a polyimide varnish represented by the formula (I[)]. Polyimide varnish made by dissolving the polyamic acid to be dissolved in an organic solvent and adding a silane coupling agent thereto is overcoated to a thickness of 5 to 100 μm.
A heat-resistant resin layer 2 with a thickness of preferably 10 to 50 μm is formed, and Ta-8iO2, Cr-SiOz, -ri-
A heating resistor 3 made of 8io2 or the like is formed.
(以下余白)
(式中Xは一長)ぺφ斧を、nは正の数を表わす。以下
同じ。)
この発熱抵抗体3上には、発熱部4となる間口を形成す
るごと<A、12、An−8i等からなる個別電極5お
よび共通電極6が形成され、少なくともこの発熱部4を
被覆するように5i−N−0系の酸化防止兼耐摩耗gI
7が形成されている。(Left below) (In the formula, X represents one length) peφaxe, and n represents a positive number. same as below. ) Individual electrodes 5 and common electrodes 6 made of <A, 12, An-8i, etc. are formed on this heating resistor 3 to form an opening that will become a heating section 4, and cover at least this heating section 4. 5i-N-0 type oxidation prevention and wear resistance gI
7 is formed.
(III)式、(IV)式は、それぞれ(I)式および
(II)式のポリアミック酸の脱水環化により形成され
たポリイミドの分子構造である。なJ5環化模、シラン
カップリング剤は表面に薄い層となって存在する。Formulas (III) and (IV) are molecular structures of polyimides formed by dehydration and cyclization of polyamic acids of formulas (I) and (II), respectively. The J5 cyclization model and silane coupling agent are present as a thin layer on the surface.
・・・ (IV)
そしてこのサーマルヘッドは、個別型?4+5と共通電
極6との間に所定の時間間隔でパルス電圧を印加するこ
とにより発熱部4の発熱抵抗体3が発熱し印字記録が行
われる。... (IV) And is this thermal head an individual type? By applying a pulse voltage between 4+5 and the common electrode 6 at predetermined time intervals, the heating resistor 3 of the heating section 4 generates heat and printing is performed.
このサーマルヘッドは、例えば次のようにして製造され
る。This thermal head is manufactured, for example, as follows.
まず、例えばCrを16重量%含有する厚さ0.311
程度のFe合金からなる金属基板1をレベリング模、所
定の寸法に切断し、脱脂、洗浄および乾水素雰囲気中で
600℃〜800℃の温度で熱処理を行う。次に、前述
した(1)式で表されるポリアミック酸を、N−メチル
ピロリドン等の有機溶剤を用いてローラーコーターやス
ピオンコーターを用いて金属基板1上に所定の膜厚に塗
布し、焼成炉を用いて窒素ガス雰囲気中で120℃30
分の加熱を行い溶媒の70〜80%を除去し、この後こ
の上にシランカップリング剤を含む(IF)式で示され
るポリアミック酸を所定の粘度に調整して所定の膜厚と
なるよう塗布し、窒素ガス雰囲気中で120℃30分間
、 150℃30分間、 250℃30分、 450℃
30分の加熱を行い成膜する。First, for example, the thickness is 0.311 containing 16% by weight of Cr.
A metal substrate 1 made of a Fe alloy of about 100 mL is cut into a predetermined size as a leveling pattern, and subjected to degreasing, cleaning, and heat treatment at a temperature of 600° C. to 800° C. in a dry hydrogen atmosphere. Next, the polyamic acid represented by the above-mentioned formula (1) is coated onto the metal substrate 1 to a predetermined thickness using an organic solvent such as N-methylpyrrolidone using a roller coater or a spin coater, 120℃30 in nitrogen gas atmosphere using a firing furnace
70 to 80% of the solvent is removed, and then a polyamic acid represented by the formula (IF) containing a silane coupling agent is placed on top of this to adjust the viscosity to a predetermined viscosity to obtain a predetermined film thickness. 120°C for 30 minutes, 150°C for 30 minutes, 250°C for 30 minutes, 450°C in a nitrogen gas atmosphere.
A film is formed by heating for 30 minutes.
しかる後、この耐熱樹脂層2上にスパッタリング、その
他公知の方法により丁a−8iQ2、Cr−SiO2、
Ti=SiOz等からなる発熱抵抗体3を形成し、さら
にこの発熱抵抗体3上に発熱部4となる開口が形成され
るようにスパッタリング、その他公知の方法によ、すA
J2、Aβ−8i 、 AA−8i −CuあるいはA
U等からなる個別電極5および共通電極6を形成して、
発熱部4を被覆するようにS i −N−0からなる酸
化防止膜兼耐摩耗膜7を、例えばスパッタリング法等で
形成する。Thereafter, Cr-8iQ2, Cr-SiO2,
A heat generating resistor 3 made of Ti=SiOz or the like is formed, and then sputtering or other known methods are used to form an opening on the heat generating resistor 3 to form a heat generating part 4.
J2, Aβ-8i, AA-8i-Cu or A
Forming individual electrodes 5 and common electrodes 6 made of U etc.,
An anti-oxidation film/wear-resistant film 7 made of S i -N-0 is formed by, for example, sputtering method so as to cover the heat generating portion 4 .
このサーマルヘッドの製造過程において、ポリイミド樹
脂表面の付着力および耐熱性について評価した。During the manufacturing process of this thermal head, the adhesion and heat resistance of the polyimide resin surface were evaluated.
第3図は引張り試験の結果から求めた金属との付着強度
および熱重山測定より求めた熱分解開始温度をごスアミ
ノシロキサンの添加量の関数として示したグラフであり
、また第4図はポリイミド膜上の発熱抵抗体の付着強度
をシランカップリング剤の添加量の関数として示した図
である。Figure 3 is a graph showing the adhesion strength with metal determined from the results of a tensile test and the thermal decomposition onset temperature determined from thermal mass measurement as a function of the amount of aminosiloxane added. FIG. 3 is a diagram showing the adhesion strength of a heating resistor on a film as a function of the amount of silane coupling agent added.
なおこれらの図から、Si基を有するジアミンの置換■
は2〜10モル%程度の範囲が望ましく、シランカップ
リング剤の添加1は0.05〜10重量%程度の範囲が
好ましいことがわかる。またサーマルヘッドの発熱抵抗
体は、瞬時450℃前債、持続250〜300℃の湿度
で動作するが、第4図の結果からシランカップリング剤
の添加により耐熱性が向上し、これを少くとも発熱抵抗
体と接する側に使用することにより耐熱樹脂層の耐熱寿
命を伸ばすことができることがわかる。From these figures, it can be seen that the substitution of diamine with Si group
is preferably in the range of about 2 to 10 mol%, and it is understood that the amount of addition 1 of the silane coupling agent is preferably in the range of about 0.05 to 10% by weight. In addition, the heating resistor of the thermal head operates at a humidity of 450°C momentarily and 250-300°C continuously, but the results shown in Figure 4 show that the addition of a silane coupling agent improves heat resistance. It can be seen that the heat-resistant life of the heat-resistant resin layer can be extended by using it on the side that is in contact with the heating resistor.
なお発熱抵抗体側に、SiMを有しないポリイミド系樹
脂にシランカップリング剤を添加しないで使用する場合
には、発熱抵抗体との充分な接着強度を得るために表面
の改質を行うことが望ましい。このような表面処理は、
例えばプラズマ処理、02を添加したAr中でのスパッ
タエツチング処理等により実現することができる。Note that when using a polyimide resin that does not have SiM on the heating resistor side without adding a silane coupling agent, it is desirable to modify the surface in order to obtain sufficient adhesive strength with the heating resistor. . This kind of surface treatment is
For example, this can be realized by plasma treatment, sputter etching treatment in Ar added with 02, or the like.
なお本発明では金属支持体を用いでいるので、この金属
支持体を共通電極として用い、さらに生産コストを低減
させることも可能である。さらに酸化防止兼耐摩耗膜は
必ずしも全面に設ける必要はなく、少なくとも発熱部上
に形成されCいれば充分その機能を発揮する。Note that since a metal support is used in the present invention, it is also possible to use this metal support as a common electrode to further reduce production costs. Further, the oxidation-preventing and wear-resistant film does not necessarily have to be provided on the entire surface, but it can sufficiently function as long as it is formed on at least the heat-generating portion.
[発明の効果]
以上説明したように本発明においては、金属支持体上に
形成される耐熱樹脂としてビフェニルデトラカルボン酸
二無水物とp−フェニレンジアミンの反応により得られ
たポリイミド系樹脂を使用し、かつ少なくとも金属支持
体側にこのポリイミド系樹脂の主鎖の一部にSi基を有
するポリイミド系樹脂を使用したので、金属支持体およ
び発熱抵抗体との密着性が著しく向上し、また耐熱性も
向上し、これにより信頼性に優れ、安価Cかつ小型化さ
れたサーマルヘッドを提供することができる。[Effects of the Invention] As explained above, in the present invention, a polyimide resin obtained by the reaction of biphenyldetracarboxylic dianhydride and p-phenylenediamine is used as the heat-resistant resin formed on the metal support. Moreover, since a polyimide resin having a Si group in a part of the main chain of this polyimide resin is used at least on the metal support side, the adhesion with the metal support and heating resistor is significantly improved, and heat resistance is improved. As a result, it is possible to provide a thermal head that is highly reliable, inexpensive, and compact.
第1図は本発明の一実施例のサーマルヘッドの要部を拡
大して示す断面図、第2図(a)〜(f)は、それぞれ
耐熱樹脂層の少くとも金属支持体に接する部分が分子構
造中にSi基を含有する構成例を示す断面図、第3図お
よび第4図は、それぞれ付着強度と熱分解開始温度をビ
スアミノシロキサンまたはシランカップリング剤の添加
量の関数として示したグラフである。
1・・・・・・・・・・・・金属基板
2・・・・・・・・・・・・耐熱樹脂層3・・・・・・
・・・・・・発熱抵抗体4・・・・・・・・・・・・発
熱部
5・・・・・・・・・・・・個別電極
6・・・・・・・・・・・・共通電極
7・・・・・・・・・・・・酸化防止膜兼耐摩耗膜出願
人 株式会社 東 芝
代理人弁理士 須 山 佐 −
第1図
へ1 へ1
(a) (b)へ
へ1
(C)(d)
〜1 βJ
第2図
(:
第3図
場
第4図FIG. 1 is an enlarged sectional view showing the main parts of a thermal head according to an embodiment of the present invention, and FIGS. Figures 3 and 4, which are cross-sectional views showing structural examples containing Si groups in the molecular structure, respectively show the adhesion strength and thermal decomposition initiation temperature as a function of the amount of bis-aminosiloxane or silane coupling agent added. It is a graph. 1...Metal substrate 2...Heat-resistant resin layer 3...
...Heating resistor 4...Heating part 5...Individual electrode 6...・・Common electrode 7・・・・・・・・・・・ Anti-oxidation film and wear-resistant film Applicant Toshiba Corporation Patent attorney Sa Suyama - Go to Figure 1 Go to 1 Go to 1 (a) (b )fart
to 1 (C) (d) ~1 βJ Figure 2 (: Figure 3 Field Figure 4
Claims (7)
ミド成分を含有する耐熱樹脂層と、このイミド成分を含
有する耐熱樹脂層上に形成された多数の発熱抵抗体と、
これら各発熱抵抗体に接続された導電体とを備えてなる
サーマルヘッドにおいて、 前記イミド成分を含有する耐熱樹脂層が、ビフェニルテ
トラカルボン酸二無水物とp−フェニレンジアミンの反
応により得られたポリイミド系樹脂であり、かつ少なく
とも前記イミド成分を含有する耐熱樹脂層の金属支持体
側がこのポリイミド系樹脂の主鎖の一部にSi基を有す
るポリイミド系樹脂からなることを特徴とするサーマル
ヘッド。(1) a metal support, a heat-resistant resin layer containing an imide component formed on the metal support, and a large number of heating resistors formed on the heat-resistant resin layer containing the imide component;
In a thermal head comprising a conductor connected to each of these heating resistors, the heat-resistant resin layer containing the imide component is made of polyimide obtained by a reaction of biphenyltetracarboxylic dianhydride and p-phenylenediamine. A thermal head characterized in that the metal support side of the heat-resistant resin layer containing at least the imide component is made of a polyimide resin having a Si group in a part of the main chain of the polyimide resin.
ボン酸二無水物とp−フェニレンジアミンの開環付加反
応で得たポリアミック酸の脱水環化反応を経て形成され
たものであり、かつ前記主鎖の一部にSi基を有するポ
リイミド系樹脂が前記ビフェニルテトラカルボン酸無水
物とp−フェニレンジアミンの一部をSi基を有するジ
アミンで置換して得たジアミンとの開環付加反応により
得られたポリアミック酸の脱水環化反応を経て形成され
たものである特許請求の範囲第1項記載のサーマルヘッ
ド。(2) The polyimide resin is formed through a cyclodehydration reaction of a polyamic acid obtained by a ring-opening addition reaction of biphenyltetracarboxylic dianhydride and p-phenylenediamine, and A polyamic resin obtained by a ring-opening addition reaction of a polyimide resin partially containing Si groups with a diamine obtained by substituting a portion of the biphenyltetracarboxylic anhydride and p-phenylenediamine with a diamine containing Si groups. The thermal head according to claim 1, which is formed through a dehydration cyclization reaction of an acid.
。)で表わされるビスアミノジシロキサンであることを
特徴とする特許請求の範囲第1項または第2項記載のサ
ーマルヘッド。(3) The diamine having a Si group is represented by the general formula ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (In the formula, R is a divalent organic group and R' is a monovalent organic group.) 3. The thermal head according to claim 1 or 2, wherein the thermal head is bisaminodisiloxane.
であることを特徴とする特許請求の範囲第3項記載のサ
ーマルヘッド。(4) The thermal head according to claim 3, wherein in the formula, R is an alkylene group and R' is an alkyl group.
ェニルテトラカルボン酸二無水物とp−フェニレンジア
ミンの開環付加反応により得たポリアミック酸にアミノ
結合を有するシラン化合物および尿素結合を有するシラ
ン化合物の少くとも1種をシランカップリング剤成分と
して添加したポリアミック酸の脱水環化反応を経て形成
されたものであることを特徴とする特許請求の範囲第1
項ないし第4項のいずれか1項記載のサーマルヘッド。(5) At least the heating resistor side of the heat-resistant resin layer is made of a silane compound having an amino bond and a silane bond having a urea bond in a polyamic acid obtained by a ring-opening addition reaction of biphenyltetracarboxylic dianhydride and p-phenylenediamine. Claim 1, characterized in that the polyamic acid is formed through a dehydration cyclization reaction of a polyamic acid to which at least one compound is added as a silane coupling agent component.
The thermal head according to any one of items 1 to 4.
ミノプロピルトリエトキシシラン、N−フェニル−γ−
アミノプロピルトリメトキシシランのいずれかであるこ
とを特徴とする特許請求の範囲第5項記載のサーマルヘ
ッド。(6) The silane compound having an amino bond is γ-aminopropyltriethoxysilane, N-phenyl-γ-
The thermal head according to claim 5, characterized in that it is any one of aminopropyltrimethoxysilane.
イドプロピルトリメトキシシランであることを特徴とす
る特許請求の範囲第5項記載のサーマルヘッド。(7) The thermal head according to claim 5, wherein the silane compound having a urea bond is γ-ureidopropyltrimethoxysilane.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62021298A JP2597564B2 (en) | 1987-01-31 | 1987-01-31 | Thermal head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62021298A JP2597564B2 (en) | 1987-01-31 | 1987-01-31 | Thermal head |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63189252A true JPS63189252A (en) | 1988-08-04 |
JP2597564B2 JP2597564B2 (en) | 1997-04-09 |
Family
ID=12051237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62021298A Expired - Lifetime JP2597564B2 (en) | 1987-01-31 | 1987-01-31 | Thermal head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2597564B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6469667A (en) * | 1987-08-21 | 1989-03-15 | Du Pont | Polyimide coating composition |
JPH0288677A (en) * | 1988-09-27 | 1990-03-28 | Ube Ind Ltd | Polyimidesiloxane composition |
JP2011254066A (en) * | 2010-05-06 | 2011-12-15 | Hitachi Metals Ltd | Fe-BASED NANO CRYSTAL ALLOY THIN BAND LAMINATE, MAGNETIC CORE FOR ANTENNA AND ANTENNA |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS595648A (en) * | 1982-07-02 | 1984-01-12 | Oki Electric Ind Co Ltd | Manufacture of multilayer wiring structure |
JPS59179650A (en) * | 1983-03-31 | 1984-10-12 | Nitto Electric Ind Co Ltd | Heat-resistant, electrically conductive paste composition |
-
1987
- 1987-01-31 JP JP62021298A patent/JP2597564B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS595648A (en) * | 1982-07-02 | 1984-01-12 | Oki Electric Ind Co Ltd | Manufacture of multilayer wiring structure |
JPS59179650A (en) * | 1983-03-31 | 1984-10-12 | Nitto Electric Ind Co Ltd | Heat-resistant, electrically conductive paste composition |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6469667A (en) * | 1987-08-21 | 1989-03-15 | Du Pont | Polyimide coating composition |
JPH0288677A (en) * | 1988-09-27 | 1990-03-28 | Ube Ind Ltd | Polyimidesiloxane composition |
JP2011254066A (en) * | 2010-05-06 | 2011-12-15 | Hitachi Metals Ltd | Fe-BASED NANO CRYSTAL ALLOY THIN BAND LAMINATE, MAGNETIC CORE FOR ANTENNA AND ANTENNA |
Also Published As
Publication number | Publication date |
---|---|
JP2597564B2 (en) | 1997-04-09 |
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