JPH024631B2 - - Google Patents
Info
- Publication number
- JPH024631B2 JPH024631B2 JP7706284A JP7706284A JPH024631B2 JP H024631 B2 JPH024631 B2 JP H024631B2 JP 7706284 A JP7706284 A JP 7706284A JP 7706284 A JP7706284 A JP 7706284A JP H024631 B2 JPH024631 B2 JP H024631B2
- Authority
- JP
- Japan
- Prior art keywords
- dianhydride
- inorganic material
- polyimide film
- polyamic acid
- mol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910010272 inorganic material Inorganic materials 0.000 claims description 12
- 239000011147 inorganic material Substances 0.000 claims description 12
- 229920001721 polyimide Polymers 0.000 claims description 12
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 10
- 239000002131 composite material Substances 0.000 claims description 8
- 125000006158 tetracarboxylic acid group Chemical group 0.000 claims description 7
- HUWXDEQWWKGHRV-UHFFFAOYSA-N 3,3'-Dichlorobenzidine Chemical compound C1=C(Cl)C(N)=CC=C1C1=CC=C(N)C(Cl)=C1 HUWXDEQWWKGHRV-UHFFFAOYSA-N 0.000 claims description 6
- 150000004984 aromatic diamines Chemical class 0.000 claims description 6
- 150000004985 diamines Chemical class 0.000 claims description 5
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 10
- 229920005575 poly(amic acid) Polymers 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000002966 varnish Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- KZTYYGOKRVBIMI-UHFFFAOYSA-N diphenyl sulfone Chemical compound C=1C=CC=CC=1S(=O)(=O)C1=CC=CC=C1 KZTYYGOKRVBIMI-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- -1 p-aminophenoxy Chemical group 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- BYEAHWXPCBROCE-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropan-2-ol Chemical compound FC(F)(F)C(O)C(F)(F)F BYEAHWXPCBROCE-UHFFFAOYSA-N 0.000 description 1
- AVQQQNCBBIEMEU-UHFFFAOYSA-N 1,1,3,3-tetramethylurea Chemical compound CN(C)C(=O)N(C)C AVQQQNCBBIEMEU-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
- RLYCRLGLCUXUPO-UHFFFAOYSA-N 2,6-diaminotoluene Chemical compound CC1=C(N)C=CC=C1N RLYCRLGLCUXUPO-UHFFFAOYSA-N 0.000 description 1
- ZQQOGBKIFPCFMJ-UHFFFAOYSA-N 2-(trifluoromethyl)benzene-1,4-diamine Chemical compound NC1=CC=C(N)C(C(F)(F)F)=C1 ZQQOGBKIFPCFMJ-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- PPDFQRAASCRJAH-UHFFFAOYSA-N 2-methylthiolane 1,1-dioxide Chemical compound CC1CCCS1(=O)=O PPDFQRAASCRJAH-UHFFFAOYSA-N 0.000 description 1
- XBTHNZXADRSYPR-UHFFFAOYSA-N 3-(1,1,1,3,3,3-hexafluoro-2-phenylpropan-2-yl)benzene-1,2-diamine Chemical compound NC1=CC=CC(C(C=2C=CC=CC=2)(C(F)(F)F)C(F)(F)F)=C1N XBTHNZXADRSYPR-UHFFFAOYSA-N 0.000 description 1
- OLQWMCSSZKNOLQ-UHFFFAOYSA-N 3-(2,5-dioxooxolan-3-yl)oxolane-2,5-dione Chemical compound O=C1OC(=O)CC1C1C(=O)OC(=O)C1 OLQWMCSSZKNOLQ-UHFFFAOYSA-N 0.000 description 1
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- FYYYKXFEKMGYLZ-UHFFFAOYSA-N 4-(1,3-dioxo-2-benzofuran-5-yl)-2-benzofuran-1,3-dione Chemical compound C=1C=C2C(=O)OC(=O)C2=CC=1C1=CC=CC2=C1C(=O)OC2=O FYYYKXFEKMGYLZ-UHFFFAOYSA-N 0.000 description 1
- ZCTYGKMXWWDBCB-UHFFFAOYSA-N 4-(trifluoromethyl)benzene-1,3-diamine Chemical compound NC1=CC=C(C(F)(F)F)C(N)=C1 ZCTYGKMXWWDBCB-UHFFFAOYSA-N 0.000 description 1
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 1
- QBSMHWVGUPQNJJ-UHFFFAOYSA-N 4-[4-(4-aminophenyl)phenyl]aniline Chemical group C1=CC(N)=CC=C1C1=CC=C(C=2C=CC(N)=CC=2)C=C1 QBSMHWVGUPQNJJ-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- ZHBXLZQQVCDGPA-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)sulfonyl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(S(=O)(=O)C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 ZHBXLZQQVCDGPA-UHFFFAOYSA-N 0.000 description 1
- 229910000967 As alloy Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- STZIXLPVKZUAMV-UHFFFAOYSA-N cyclopentane-1,1,2,2-tetracarboxylic acid Chemical compound OC(=O)C1(C(O)=O)CCCC1(C(O)=O)C(O)=O STZIXLPVKZUAMV-UHFFFAOYSA-N 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Natural products C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- 239000006249 magnetic particle Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000002256 xylenyl group Chemical class C1(C(C=CC=C1)C)(C)* 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Laminated Bodies (AREA)
- Paints Or Removers (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Magnetic Record Carriers (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は耐熱性の優れた複合体に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a composite material with excellent heat resistance.
現在、フレキシブル印刷配線板用の基板はポリ
イミドフイルムと金属箔とを接着剤層を介して接
着させて製造している。
Currently, substrates for flexible printed wiring boards are manufactured by bonding polyimide film and metal foil through an adhesive layer.
そのため接着剤の耐熱性が十分でないのでポリ
イミドフイルムの耐熱性を十分に発揮することが
出来ず、基板の半田耐熱性は260℃程度である。 As a result, the heat resistance of the adhesive is insufficient, making it impossible to fully demonstrate the heat resistance of the polyimide film, and the soldering heat resistance of the substrate is approximately 260°C.
また特公昭39−348号公報にはピロメリツト酸
などのテトラカルボン酸と4,4′−ジアミノジフ
エニルエーテルなどの芳香族ジアミンから得られ
た芳香族ポリアミド酸溶液を金属箔に塗布して基
板とする方法が記載されているが、得られた基板
がカールする問題がある。 Furthermore, Japanese Patent Publication No. 39-348 discloses that an aromatic polyamic acid solution obtained from a tetracarboxylic acid such as pyromellitic acid and an aromatic diamine such as 4,4'-diaminodiphenyl ether is applied to a metal foil to form a substrate. However, there is a problem that the obtained substrate curls.
一方、半導体製造に用いられているシリコンウ
エハやセラミツク基板にポリアミド酸をコート
し、加熱してイミド化するとポリイミド膜の厚さ
が薄い場合は全く問題ないが、膜厚が厚くなる
と、シリコンウエハやセラミツク板にそりが発生
し問題となる。これらは金属、シリコン、セラミ
ツクなどの無機材料とポリイミドの膨張係数の不
一致に基づくものである。 On the other hand, if silicon wafers or ceramic substrates used in semiconductor manufacturing are coated with polyamic acid and heated to imidize, there is no problem if the polyimide film is thin, but if the film becomes thick, the silicon wafer or Warping occurs on the ceramic plate, which becomes a problem. These are based on the mismatch in expansion coefficients between polyimide and inorganic materials such as metals, silicon, and ceramics.
本発明は特殊なジアミンを用いたポリアミド酸
ワニスを使用することにより耐熱性にすぐれ、カ
ールしないフレキシブル印刷配線用基板、ポリイ
ミドをコートしたそりのないシリコンウエハやセ
ラミツク基板等の複合体を提供することを目的と
する。
The present invention provides a composite body such as a flexible printed wiring board that has excellent heat resistance and does not curl by using a polyamic acid varnish using a special diamine, and a silicon wafer coated with polyimide and a ceramic board that does not warp. With the goal.
すなわち、本発明は3,3′−ジクロルベンジジ
ンと他の芳香族ジアミンとのモル比が50:50〜
95:5からなるジアミン成分とピロメリト酸二無
水物を50モル%以上含むテトラカルボン酸二無水
物成分とを重合してなるポリイミドの膜を無機材
料上に形成し又は該ポリイミドの膜と無機材料若
しくは無機材料を含む層とを一体化してなる複合
体に関する。
That is, in the present invention, the molar ratio of 3,3'-dichlorobenzidine and other aromatic diamine is from 50:50 to
A polyimide film formed by polymerizing a diamine component consisting of 95:5 and a tetracarboxylic dianhydride component containing 50 mol% or more of pyromellitic dianhydride is formed on an inorganic material, or a polyimide film and an inorganic material are formed on the inorganic material. Alternatively, it relates to a composite formed by integrating a layer containing an inorganic material.
本発明に係る複合体は、前記芳香族ジアミン成
分と前記テトラカルボン酸二無水物成分とを非プ
ロトン性極性溶媒中で反応させて得られるポリア
ミド酸ワニスを無機材料に塗布し、または該ポリ
アミド酸ワニスに無機材料を粉状で添加した後適
当な基材上に塗布し、次いで、イミド化すること
によつて製造することができる。なお、イミド化
の前にエツチング、もう一つの無機材料、ポリイ
ミドフイルム等の有機材料などの積層等を行なつ
てもよい。 The composite according to the present invention is produced by coating an inorganic material with a polyamic acid varnish obtained by reacting the aromatic diamine component and the tetracarboxylic dianhydride component in an aprotic polar solvent, or It can be produced by adding an inorganic material in powder form to a varnish, coating it on a suitable substrate, and then imidizing it. Note that, before imidization, etching, lamination of another inorganic material, an organic material such as a polyimide film, etc. may be performed.
本発明において、3,3′−ジクロルベンジジン
と他の芳香族ジアミンのモル比は、前者/後者が
50/50〜95/5であり、好ましくは65/35〜90/
10である。3,3′−ジクロルベンジジンが50モル
%より少ないと複合体としたときカールやそりが
発生する。また95モル%より多いともろくなる。 In the present invention, the molar ratio of 3,3'-dichlorobenzidine and other aromatic diamine is such that the former/latter is
50/50 to 95/5, preferably 65/35 to 90/
It is 10. If the amount of 3,3'-dichlorobenzidine is less than 50 mol%, curling or warping will occur when the composite is formed. Moreover, if it exceeds 95 mol%, it becomes brittle.
本発明において用いられるピロメリト酸二無水
物以外のテトラカルボン酸二無水物成分としては
3,3′,4,4′−ベンゾフエノンテトラカルボン
酸二無水物、3,3′,4,4′−ジフエニルエーテ
ルテトラカルボン酸二無水物、2,3,3′,4′−
ビフエニルテトラカルボン酸二無水物、3,3′,
4,4′−ビフエニルテトラカルボン酸二無水物、
2,3,6,7−ナフタリンテトラカルボン酸二
無水物、1,2,5,6−ナフタリンテトラカル
ボン酸二無水物、1,4,5,8−ナフタリンテ
トラカルボン酸二無水物、ペリレンテトラカルボ
ン酸二無水物、3,3,4,4′−ジフエニルプロ
パンテトラカルボン酸二無水物、3,3′,4,
4′−ジフエニルヘキサフルオロプロパンテトラカ
ルボン酸二無水物、3,3′,4,4′−ジフエニル
スルホンテトラカルボン酸二無水物、ブタンテト
ラカルボン酸二無水物、シクロペンタンテトラカ
ルボン酸二無水物、エチレンビストリメリテート
テトラカルボン酸二無水物などがあり、これらの
成分は50モル%以下使用するのがよい。 Tetracarboxylic dianhydride components other than pyromellitic dianhydride used in the present invention include 3,3',4,4'-benzophenonetetracarboxylic dianhydride, 3,3',4,4' -Diphenyl ether tetracarboxylic dianhydride, 2,3,3',4'-
Biphenyltetracarboxylic dianhydride, 3,3',
4,4'-biphenyltetracarboxylic dianhydride,
2,3,6,7-naphthalenetetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, perylenetetra Carboxylic dianhydride, 3,3,4,4'-diphenylpropanetetracarboxylic dianhydride, 3,3',4,
4'-Diphenylhexafluoropropanetetracarboxylic dianhydride, 3,3',4,4'-diphenylsulfonetetracarboxylic dianhydride, butanetetracarboxylic dianhydride, cyclopentanetetracarboxylic dianhydride ethylene bistrimelitate tetracarboxylic dianhydride, etc. These components are preferably used in an amount of 50 mol% or less.
3,3′−ジクロルベンジジンと組合せる他の芳
香族ジアミンとしては4,4′−ジアミノジフエニ
ルエーテル、4,4′−ジアミノジフエニルメタ
ン、4,4′−ジアミノジフエニルスルホン、3,
3′−ジアミノフエニルスルホン、4,4′−ジアミ
ノジフエニルプロパン、4,4′ジアミノジフエニ
ルヘキサフルオロプロパン、m−フエニレンジア
ミン、p−フエニレンジアミン、4,4″−ジアミ
ノターフエニル、4,4−ジアミノクオータフエ
ニル、2,4−ジアミノトルエン、2,6−ジア
ミノトルエン、2,4−ジアミノベンゾトリフル
オライド、2,5−ジアミノベンゾトリフルオラ
イド、1,4−ビス(p−アミノフエノキシ)ベ
ンゼン、1,3−ビス(p−アミノフエノキシ)
ベンゼン、4,4′−ジ(m−アミノフエノキシ)
ジフエニルスルホン、4,4′−ジ(p−アミノフ
エノキシ)ジフエニルスルホン、4,4′−ジ(o
−アミノフエノキシ)ジフエニルスルホン、4,
4′−ビス(p−アミノフエノキシ))ジフエニル
などがある。さらに全アミン成分に対して5モル
%以下ならば接着性を向上させる目的でシロキサ
ン含有ジアミンを添加することもできる。 Other aromatic diamines to be combined with 3,3'-dichlorobenzidine include 4,4'-diaminodiphenyl ether, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl sulfone, 3,
3'-diaminophenyl sulfone, 4,4'-diaminodiphenylpropane, 4,4' diaminodiphenylhexafluoropropane, m-phenylenediamine, p-phenylenediamine, 4,4''-diaminoterphenyl, 4,4-diaminoquarterphenyl, 2,4-diaminotoluene, 2,6-diaminotoluene, 2,4-diaminobenzotrifluoride, 2,5-diaminobenzotrifluoride, 1,4-bis(p-aminophenoxy) ) Benzene, 1,3-bis(p-aminophenoxy)
Benzene, 4,4'-di(m-aminophenoxy)
Diphenylsulfone, 4,4'-di(p-aminophenoxy)diphenylsulfone, 4,4'-di(o
-aminophenoxy)diphenylsulfone, 4,
Examples include 4'-bis(p-aminophenoxy))diphenyl. Further, a siloxane-containing diamine may be added for the purpose of improving adhesiveness if it is 5 mol % or less based on the total amine component.
前記非プロント性極性溶媒としてはN−メチル
−2−ピロリドン、N,N−ジメチルアセトアミ
ド、N,N−ジメチルホルムアミド、N,N−ジ
エチルホルムアミド、ジメチルスルホキサイド、
スルホラン、メチルスルホラン、テトラメチル尿
素、ヘキサメチルホスホルアミド、ブチルラクト
ン等が好ましい。これらは2種以上混合して用い
てもよい。また、これらとキシレン、トルエン、
フエノール、アセトン、メチルエチルケトン、ジ
アセトンアルコール、セロソルブ類、セロソルブ
アセテート類、カルビトール類、メチルイソブチ
ルケトン、クレゾール、キシレノール、ジオキサ
ン、シクロヘキサノン、ヘキサフルオロイソプロ
パノール等の溶媒をポリアミド酸が析出しない範
囲で添加して使用することができる。 The aprontic polar solvent includes N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, N,N-diethylformamide, dimethylsulfoxide,
Sulfolane, methylsulfolane, tetramethylurea, hexamethylphosphoramide, butyl lactone and the like are preferred. Two or more of these may be used in combination. In addition, these and xylene, toluene,
Add solvents such as phenol, acetone, methyl ethyl ketone, diacetone alcohol, cellosolves, cellosolve acetates, carbitols, methyl isobutyl ketone, cresol, xylenol, dioxane, cyclohexanone, hexafluoroisopropanol to the extent that polyamic acid does not precipitate. can be used.
全ジアミン成分と全テトラカルボン酸二無水物
成分とのモル比は等当量が好ましいや、いずれか
一方の成分が5モル%以内で適不足であつても差
しつかえない。 The molar ratio of all diamine components and all tetracarboxylic dianhydride components is preferably equivalent, but it is acceptable even if one of the components is inadequate within 5 mol %.
ポリアミド酸ワニスの濃度は3〜25重量%の間
が粘度や加工性の点でよい。 The concentration of the polyamic acid varnish is preferably between 3 and 25% by weight in terms of viscosity and processability.
ポリアミド酸ワニをス得るための反応温度は0
〜50℃がよいが、最終的に粘度を調整する場合は
一旦高粘度になつた後、70〜80℃で反応させるの
がよい。 The reaction temperature to obtain polyamic acid varnish is 0.
The temperature is preferably ~50°C, but when the viscosity is finally adjusted, it is better to carry out the reaction at 70~80°C once the viscosity has reached a high level.
このようにして得られたポリアミド酸ワニスと
無機材料と組み合せて複合体とするのであるがそ
の例としては以下のものがある。 The polyamic acid varnish thus obtained is combined with an inorganic material to form a composite, examples of which are as follows.
すなわち、
(1) 銅、鉄、アルミ、ステンレス等の金属箔に塗
布したFPC用基板やアモルフアス太陽電池用
基板、
(2) シリコン、ガリウムヒ素等のチツプ上に塗布
し多層配線層間絶縁膜として利用した多層配線
LSI、
(3) LSIチツプ上に塗布し、パツシベーシヨン膜
がα線しやへい膜として利用する半導体装置。 In other words, (1) FPC substrates and amorphous solar cell substrates coated on metal foils such as copper, iron, aluminum, and stainless steel; (2) coated on chips of silicon, gallium arsenide, etc., and used as multilayer wiring interlayer insulation films. multilayer wiring
LSI, (3) A semiconductor device in which a passivation film is coated on an LSI chip and used as an α-ray shielding film.
(4) 銅、鉄、アルミ、ステンレス、ニツケル、42
アロイ、アンバー等の金属板と配線間の絶縁の
ために絶縁膜として利用する金属基板、
(5) ガラス板上に塗布して液晶配向膜として利用
する液晶表示装置、
(6) アルミナ、炭化ケイ素、ジルコン、ベリリ
ア、サフアイア等の基板上にポリアミドを絶縁
膜として塗布した多層基板、
(7) 銅線等の導電膜の絶縁被覆材として利用する
エナメル線、
(8) ポリイミドフイルム上に蒸着またはスパツタ
リングにより形成された薄膜を有する磁気記録
媒体又はEL表示装置、
(9) ポリイミドフイルム上に磁粉を含んだワニス
を塗布してなる磁気テープ、磁気デイスク等で
ある。(4) Copper, iron, aluminum, stainless steel, nickel, 42
Metal substrates such as alloy and amber used as insulating films for insulation between metal plates and wiring, (5) Liquid crystal display devices coated on glass plates and used as liquid crystal alignment films, (6) Alumina, silicon carbide (7) Enameled wire used as an insulating coating for conductive films such as copper wire; (8) Vapor deposition or sputtering on polyimide film. (9) Magnetic tapes, magnetic disks, etc. made by coating a polyimide film with varnish containing magnetic particles.
フレキシブル印刷配線板用に使用する場合に
は、銅箔にコーター、ダイス等の手段で塗布し、
加熱により溶媒を除去すると共に閉環させてイミ
ド化を行なう。イミド化の際、金属箔の酸化を防
ぐために不活性ガス中で行なうのがよい。 When used for flexible printed wiring boards, it is applied to copper foil using a coater, die, etc.
The solvent is removed by heating and the ring is closed to effect imidization. The imidization is preferably carried out in an inert gas to prevent oxidation of the metal foil.
シリコンウエハ、セラミツク板などへコートす
る場合はスピンナーによるコートがよい。 When coating silicon wafers, ceramic plates, etc., it is best to coat with a spinner.
実施例 1
温度計、撹拌機および塩化カルシウム管をつけ
た5の四口フラスコに3,3′−ジクロルベンジ
ジン215.05g、4,4′−ジアミノジフエニルエー
テル30g、N−メチルピロリドン2000g、N,N
−ジメチルアセトアミド2000gを入れて、内容物
を撹拌し、フラスコを氷冷する。ピロメリト酸二
無水物218gを徐々に加え、10℃で9時間反応さ
せた。生成したポリアミド酸の還元粘度は2.13
dl/g(溶媒N−メチルピロリドン、濃度0.1
g/100ml、温度25℃)であつた。この溶液を
35μmの圧延銅箔に塗布し、窒素雰囲気中で100℃
で30分加熱し、次に銅箔を固定して250℃10分、
400℃、10分熱処理し、塗膜厚25μmのフレキシブ
ル印刷配線板用の基板を得た。この基板は初期、
エツチング後共にカールしなかつた。半田耐熱試
験の結果350℃でもふくれの発生はなかつた。
Example 1 215.05 g of 3,3'-dichlorobenzidine, 30 g of 4,4'-diaminodiphenyl ether, 2000 g of N-methylpyrrolidone, N ,N
- Add 2000 g of dimethylacetamide, stir the contents, and cool the flask on ice. 218 g of pyromellitic dianhydride was gradually added and reacted at 10°C for 9 hours. The reduced viscosity of the produced polyamic acid is 2.13
dl/g (solvent N-methylpyrrolidone, concentration 0.1
g/100ml, temperature 25°C). This solution
Coated on 35μm rolled copper foil and heated at 100℃ in nitrogen atmosphere
Heat for 30 minutes at 250℃, then fix the copper foil and heat at 250℃ for 10 minutes.
Heat treatment was performed at 400°C for 10 minutes to obtain a substrate for a flexible printed wiring board with a coating thickness of 25 μm. This board is initially
After etching, it did not curl. As a result of the solder heat resistance test, no blistering occurred even at 350℃.
本発明により耐熱性に優れ、カールを防止し、
そりが少ない複合体が得られた。
The present invention has excellent heat resistance, prevents curling,
A composite with less warpage was obtained.
Claims (1)
アミンとのモル比が50:50〜95:5から成るジア
ミン成分とピロメリト酸二無水物を50モル%以上
含むテトラカルボン酸二無水物成分とを重合して
なるポリイミドの膜を無機材料上に形成し又は該
ポリイミドの膜と無機材料若しくは無機材料を含
む層とを一体化してなる複合体。1. A diamine component consisting of a molar ratio of 3,3'-dichlorobenzidine and other aromatic diamine of 50:50 to 95:5, and a tetracarboxylic dianhydride component containing 50 mol% or more of pyromellitic dianhydride. A composite body formed by forming a polyimide film on an inorganic material, or integrating the polyimide film and an inorganic material or a layer containing an inorganic material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7706284A JPS60221427A (en) | 1984-04-17 | 1984-04-17 | Manufacture of composite material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7706284A JPS60221427A (en) | 1984-04-17 | 1984-04-17 | Manufacture of composite material |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16112389A Division JPH02103131A (en) | 1989-06-23 | 1989-06-23 | Complex |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60221427A JPS60221427A (en) | 1985-11-06 |
JPH024631B2 true JPH024631B2 (en) | 1990-01-29 |
Family
ID=13623303
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7706284A Granted JPS60221427A (en) | 1984-04-17 | 1984-04-17 | Manufacture of composite material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60221427A (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60243120A (en) * | 1984-05-18 | 1985-12-03 | Hitachi Ltd | Flexible printed base board and production thereof |
JPH0740629B2 (en) * | 1984-08-31 | 1995-05-01 | 株式会社日立製作所 | Manufacturing method of multilayer wiring board for electronic devices |
JPS61158025A (en) * | 1984-12-28 | 1986-07-17 | Canon Inc | Magnetic recording medium |
JP2657700B2 (en) * | 1988-08-08 | 1997-09-24 | 日本電信電話株式会社 | Fluorine-containing polyimide optical material |
JP3523952B2 (en) * | 1995-12-26 | 2004-04-26 | 日東電工株式会社 | Polyimide-metal foil composite film |
JP4568971B2 (en) * | 2000-07-27 | 2010-10-27 | 日立化成デュポンマイクロシステムズ株式会社 | Polyimide and its precursor, photosensitive resin composition, pattern manufacturing method and electronic component |
-
1984
- 1984-04-17 JP JP7706284A patent/JPS60221427A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60221427A (en) | 1985-11-06 |
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