JPH0288677A - Polyimidesiloxane composition - Google Patents
Polyimidesiloxane compositionInfo
- Publication number
- JPH0288677A JPH0288677A JP23983788A JP23983788A JPH0288677A JP H0288677 A JPH0288677 A JP H0288677A JP 23983788 A JP23983788 A JP 23983788A JP 23983788 A JP23983788 A JP 23983788A JP H0288677 A JPH0288677 A JP H0288677A
- Authority
- JP
- Japan
- Prior art keywords
- polyimidesiloxane
- aromatic
- composition
- polyimide siloxane
- polyimidosiloxane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 35
- -1 aromatic tetracarboxylic acid Chemical class 0.000 claims abstract description 25
- JVERADGGGBYHNP-UHFFFAOYSA-N 5-phenylbenzene-1,2,3,4-tetracarboxylic acid Chemical class OC(=O)C1=C(C(O)=O)C(C(=O)O)=CC(C=2C=CC=CC=2)=C1C(O)=O JVERADGGGBYHNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 150000004984 aromatic diamines Chemical class 0.000 claims abstract description 7
- 239000003960 organic solvent Substances 0.000 claims abstract description 7
- 150000004985 diamines Chemical class 0.000 claims abstract description 6
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims abstract description 6
- 230000000379 polymerizing effect Effects 0.000 claims abstract description 3
- 239000004642 Polyimide Substances 0.000 abstract description 38
- 229920001721 polyimide Polymers 0.000 abstract description 38
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 abstract description 25
- 238000000576 coating method Methods 0.000 abstract description 14
- 239000011248 coating agent Substances 0.000 abstract description 13
- 239000011247 coating layer Substances 0.000 abstract description 7
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 abstract description 4
- 150000001875 compounds Chemical class 0.000 abstract description 3
- 239000011147 inorganic material Substances 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract description 3
- 239000007769 metal material Substances 0.000 abstract description 3
- 229920013822 aminosilicone Polymers 0.000 abstract 2
- 239000012528 membrane Substances 0.000 abstract 1
- 238000002156 mixing Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 23
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 14
- 239000002904 solvent Substances 0.000 description 14
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- 238000006116 polymerization reaction Methods 0.000 description 12
- 125000003118 aryl group Chemical group 0.000 description 10
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- 238000001035 drying Methods 0.000 description 7
- 229920005575 poly(amic acid) Polymers 0.000 description 7
- 238000003756 stirring Methods 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 6
- OBFQBDOLCADBTP-UHFFFAOYSA-N aminosilicon Chemical compound [Si]N OBFQBDOLCADBTP-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 125000005462 imide group Chemical group 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000002798 polar solvent Substances 0.000 description 4
- NBAUUNCGSMAPFM-UHFFFAOYSA-N 3-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=CC(C(O)=O)=C1C(O)=O NBAUUNCGSMAPFM-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 239000004205 dimethyl polysiloxane Substances 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002430 hydrocarbons Chemical group 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 2
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 2
- UTDAGHZGKXPRQI-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(S(=O)(=O)C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 UTDAGHZGKXPRQI-UHFFFAOYSA-N 0.000 description 2
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 description 2
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 1
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 1
- ISPYQTSUDJAMAB-UHFFFAOYSA-N 2-chlorophenol Chemical compound OC1=CC=CC=C1Cl ISPYQTSUDJAMAB-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- ZYAASQNKCWTPKI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propan-1-amine Chemical compound CO[Si](C)(OC)CCCN ZYAASQNKCWTPKI-UHFFFAOYSA-N 0.000 description 1
- GZFGOTFRPZRKDS-UHFFFAOYSA-N 4-bromophenol Chemical compound OC1=CC=C(Br)C=C1 GZFGOTFRPZRKDS-UHFFFAOYSA-N 0.000 description 1
- WXNZTHHGJRFXKQ-UHFFFAOYSA-N 4-chlorophenol Chemical compound OC1=CC=C(Cl)C=C1 WXNZTHHGJRFXKQ-UHFFFAOYSA-N 0.000 description 1
- CQMIJLIXKMKFQW-UHFFFAOYSA-N 4-phenylbenzene-1,2,3,5-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(=O)O)=CC(C(O)=O)=C1C1=CC=CC=C1 CQMIJLIXKMKFQW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 description 1
- 239000004472 Lysine Substances 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000012295 chemical reaction liquid Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- CCAFPWNGIUBUSD-UHFFFAOYSA-N diethyl sulfoxide Chemical compound CCS(=O)CC CCAFPWNGIUBUSD-UHFFFAOYSA-N 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 1
- 229940090668 parachlorophenol Drugs 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 150000000000 tetracarboxylic acids Chemical group 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000002256 xylenyl group Chemical class C1(C(C=CC=C1)C)(C)* 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、特定の可溶性ポリイミドシロキサンが有機
溶媒に均一に溶解しているポリイミドシロキサン溶液に
、1級のアミノ基を一つ有するアミノシリコン化合物を
添加して得られたポリイミドシロキサン組成物に関する
ものである。[Detailed Description of the Invention] [Field of Industrial Application] This invention provides an amino silicon compound having one primary amino group in a polyimide siloxane solution in which a specific soluble polyimide siloxane is uniformly dissolved in an organic solvent. The present invention relates to a polyimidesiloxane composition obtained by adding the following.
この発明のポリイミドシロキサン組成物は、種々の無機
質又は金属質材料などの表面に対し、塗布平坦性などの
優れた塗布性能を有し、また、その塗布層を乾燥及び加
熱処理することにより、優れた密着性、特に低温処理で
加湿雰囲気下での優れた耐湿密着性、及び優れた耐熱性
を存する被覆層を形成することができ、電子部品用の層
間絶縁膜や表面保護膜などの薄膜層形成材料として好適
に用いられる。The polyimide siloxane composition of the present invention has excellent coating performance such as coating flatness on the surfaces of various inorganic or metallic materials, and also has excellent coating properties by drying and heat-treating the coating layer. It is possible to form a coating layer that has excellent adhesion, especially in a humidified atmosphere by low-temperature treatment, and excellent heat resistance, and is suitable for thin film layers such as interlayer insulation films and surface protection films for electronic components. It is suitably used as a forming material.
芳香族ポリイミドを電気絶縁性の保護膜(層間絶縁膜な
ど)として用いることは、既に種々提案されており、例
えば、特開昭48−34686号公報及び特開昭49−
40077号公報などには固体素子への絶縁膜、パッシ
ベーション膜、半導体集積回路などの層間絶縁膜などを
、耐熱性および絶縁性の優れた性質を有するポリイミド
で形成することが開示されている。Various proposals have already been made to use aromatic polyimide as an electrically insulating protective film (such as an interlayer insulating film); for example, JP-A-48-34686 and JP-A-49-
Publication No. 40077 and the like disclose that insulating films for solid-state devices, passivation films, interlayer insulating films for semiconductor integrated circuits, and the like are formed of polyimide, which has excellent heat resistance and insulating properties.
しかしながら、−船釣に、芳香族ポリイミドは、有機溶
媒に溶解し難いため、芳香族ポリイミドの前駆体(芳香
族ポリアミック酸)の溶液を使用して、塗布膜を形成し
、次いで、乾燥とイミド化とのために、塗布膜をかなり
の高温で長時間、加熱処理して、芳香族ポリイミドから
なる保護膜を形成する必要があり、芳香族ポリイミドか
らなる保護膜を比較的低温で再現性よく形成できるもの
ではなかったので、保護すべき電気又は電子材料自体が
熱的に劣化してしまうという問題があった。However, for boat fishing, aromatic polyimide is difficult to dissolve in organic solvents, so a solution of aromatic polyimide precursor (aromatic polyamic acid) is used to form a coating film, and then dried and imide coated. To achieve this, it is necessary to heat-treat the coated film at a fairly high temperature for a long time to form a protective film made of aromatic polyimide. However, there was a problem in that the electrical or electronic material itself to be protected would be thermally degraded.
一方、有機極性溶媒に可溶性芳香族ポリイミドは、例え
ば、特開昭57−41491号公報に記載されているよ
うなポリイミドが知られている。On the other hand, as aromatic polyimides soluble in organic polar solvents, for example, polyimides such as those described in JP-A-57-41491 are known.
しかし、それらの芳香族ポリイミドは塗布対象のシリコ
ンウェハーやガラス板などの基板との密着性が充分でな
かったので、予め基板を密着促進剤で処理して置くなど
の手段をとる必要があった。However, these aromatic polyimides did not have sufficient adhesion to the substrate to be coated, such as silicon wafers or glass plates, so it was necessary to take measures such as treating the substrate with an adhesion promoter beforehand. .
このような問題点を解決するために、ポリイミドとして
シリコン化合物との共重合体が提案されており、例えば
、特開昭57−143328号公報、及び特開昭58−
13531号公報には、ジアミンで両末端を停止したポ
リシロキサンをモノマー原料の一成分としたポリイミド
前駆体が開示されている。しかし、これらのポリイミド
前駆体も、イミド化のために塗布膜を高温で処理しなけ
ればいけないという欠点を有していた。In order to solve these problems, copolymers with silicon compounds have been proposed as polyimides; for example, JP-A-57-143328 and JP-A-58-
Publication No. 13531 discloses a polyimide precursor in which a polysiloxane terminated at both ends with diamine is used as a monomer raw material. However, these polyimide precursors also had the drawback that the coating film had to be treated at high temperature for imidization.
また、特開昭61−118424号公報及び特開昭61
−207438号公報には、可溶性ポリイミドシロキサ
ンが開示されているが、前者のポリイミドシロキサンは
、その製造工程が数段階に及び製造法が複雑であって長
時間を要するとの製造上の問題があり、さらに、後者の
ポリイミドシロキサンは、アミン成分として芳香族ジア
ミンを含有していないので、耐熱性が低いという問題が
あった。Also, JP-A-61-118424 and JP-A-61
207438 discloses a soluble polyimide siloxane, but the former polyimide siloxane has manufacturing problems in that the manufacturing process is complicated and takes a long time. Furthermore, since the latter polyimide siloxane does not contain aromatic diamine as an amine component, it has a problem of low heat resistance.
さらに、この発明者らは、先に、特願昭6227868
7号としてポリイミド前駆体酸及びそれを含有する組成
物を提案した。このポリイミドシロキサンはかなり優れ
た塗布平坦性及び耐湿密着性を有していたが、加熱乾燥
温度が200°C以下の場合には、密着性が不十分であ
り、さらに高温に加熱しなければ、電子部品の保護膜と
しで信頬性がなかったのである。Furthermore, the inventors previously applied for patent application No. 6227868.
As No. 7, we proposed a polyimide precursor acid and a composition containing it. This polyimide siloxane had fairly excellent coating flatness and moisture-resistant adhesion, but when the heating drying temperature was 200°C or lower, the adhesion was insufficient, and unless heated to a higher temperature, It was not reliable as a protective film for electronic components.
この発明者らは、上述の問題点が解決されたポリイミド
シロキサンを提供すべく鋭意検討した結果、特定の可溶
性ポリイミドシロキサンを有i溶媒に均一に溶解させた
ポリイミドシロキサン溶液に、特定のアミノシリコン化
合物を添加して得られたポリイミドシロキサン組成物が
、無機又は金属板に対して優れた塗布平坦性を有し、ま
た、その塗布層を乾燥及び加熱処理することにより形成
された被覆層が優れた耐湿密着性、並びに優れた耐熱性
及び電気絶縁性を有していることを見出し、この発明を
完成した。As a result of intensive studies to provide a polyimidesiloxane that solves the above-mentioned problems, the inventors added a specific aminosilicon compound to a polyimidesiloxane solution in which a specific soluble polyimidesiloxane was uniformly dissolved in a solvent. The polyimidesiloxane composition obtained by adding the above has excellent coating flatness on an inorganic or metal plate, and the coating layer formed by drying and heat-treating the coating layer has an excellent coating layer. The present invention was completed based on the discovery that it has moisture-resistant adhesion, as well as excellent heat resistance and electrical insulation.
この発明は、ビフェニルテトラカルボン酸類を主成分と
する芳香族テトラカルボン酸成分と、ジアミノポリシロ
キサン及び芳香族ジアミンを主成分とするジアミン成分
とを重合およびイミド化して得られた可溶性ポリイミド
シロキサンが有機溶媒に均一に溶解しているポリイミド
シロキサン溶液に、1級のアミノ基を一つ有するアミノ
シリコン化合物を添加して得られたポリイミドシロキサ
ン組成物に関する。In this invention, a soluble polyimidosiloxane obtained by polymerizing and imidizing an aromatic tetracarboxylic acid component mainly composed of biphenyltetracarboxylic acids and a diamine component mainly composed of diaminopolysiloxane and aromatic diamine is used. The present invention relates to a polyimidesiloxane composition obtained by adding an aminosilicon compound having one primary amino group to a polyimidesiloxane solution uniformly dissolved in a solvent.
以下、この発明のポリイミドシロキサン組成物について
、さらに詳しく説明する。Hereinafter, the polyimide siloxane composition of the present invention will be explained in more detail.
この発明の組成物に使用されている可溶性ポリイミドシ
ロキサンは、例えば、ビフェニルテトラカルボン酸類を
主成分とする(好ましくは80モル%以上含有している
)芳香族テトラカルボン酸成分と、ジアミノポリシロキ
サン及び芳香族ジアミンからなるジアミン成分とを、略
等モル、有機極性溶媒中で、かなり高温(好ましくは1
00〜300°Cの温度、特に140〜250°Cの温
度)に加熱して、−段で重合およびイミド化することに
よって製造されるか、あるいは、前記の二成分を略等モ
ル、有機極性溶媒中で、好ましくは約80°C以下の温
度、特に0〜60゛Cの温度で重合して、芳香族ポリア
ミックM(芳香族ポリイミド前駆体)を製造し、その芳
香族ポリアミック酸を適当な条件でイミド化して製造さ
れる。The soluble polyimidosiloxane used in the composition of the present invention includes, for example, an aromatic tetracarboxylic acid component whose main component is biphenyltetracarboxylic acids (preferably containing 80 mol% or more), diamino polysiloxane and A diamine component consisting of an aromatic diamine is mixed in approximately equimolar amounts in an organic polar solvent at a fairly high temperature (preferably 1
00 to 300 °C, especially 140 to 250 °C), and polymerization and imidization in two stages, or the above two components are combined in approximately equimolar, organic polar Aromatic polyamic M (aromatic polyimide precursor) is produced by polymerization in a solvent, preferably at a temperature of about 80°C or less, especially at a temperature of 0 to 60°C, and the aromatic polyamic acid is Manufactured by imidization under certain conditions.
前記のビフェニルテトラカルボン酸類としては、3.3
’、4.4’−ビフェニルテトラカルボン酸又はその酸
二無水物、2,3.3’、4’−ビフェニルテトラカル
ボン酸又はその酸二無水物、或いは、上記の芳香族テト
ラカルボン酸のエステル化物又は塩などでもよい。特に
、この発明では、2,3.3’、4’−ビフェニルテト
ラカルボン酸又はその酸二無水物を主成分とする芳香族
テトラカルボン酸成分を使用して得られたポリイミドシ
ロキサンが、多くの有機溶媒に対して溶解性が優れてい
るので好適である。The above biphenyltetracarboxylic acids include 3.3
',4,4'-biphenyltetracarboxylic acid or its acid dianhydride, 2,3,3',4'-biphenyltetracarboxylic acid or its acid dianhydride, or ester of the above aromatic tetracarboxylic acid It may also be a compound or a salt. In particular, in this invention, polyimidosiloxane obtained using an aromatic tetracarboxylic acid component whose main component is 2,3.3',4'-biphenyltetracarboxylic acid or its acid dianhydride, It is suitable because it has excellent solubility in organic solvents.
前記の芳香族テトラカルボン酸成分は、前記のビフェニ
ルテトラカルボン酸類の一部を、例えば、3.3”、4
.4’−ベンゾフェノンテトラカルボン酸又はその酸二
無水物、2.3.3°、4゛−ベンゾフェノンテトラカ
ルボン酸又はその酸二無水物、ピロメリット酸又はその
酸二無水物などのその他の芳香族テトラカルボン酸類で
置き換えて、前記ビフェニルテトラカルボン酸類と共に
使用されていてもよい。The aromatic tetracarboxylic acid component includes a portion of the biphenyltetracarboxylic acids, for example, 3.3'', 4.
.. Other aromatic compounds such as 4'-benzophenonetetracarboxylic acid or its dianhydride, 2.3.3°, 4'-benzophenonetetracarboxylic acid or its acid dianhydride, pyromellitic acid or its acid dianhydride It may be replaced with tetracarboxylic acids and used together with the above-mentioned biphenyltetracarboxylic acids.
前記の「その他の芳香族テトラカルボン酸類」の使用量
の割合は、全芳香族テトラカルボン酸成分に対して約2
0モル%未満、特に10モル%未満であることが好まし
い。The ratio of the amount of the above-mentioned "other aromatic tetracarboxylic acids" used is approximately 2
Preferably it is less than 0 mol%, especially less than 10 mol%.
前記ジアミノポリシロキサンは、下記の一般式(式中、
R’ は2価の炭化水素残基を示し、R2は炭素数1〜
10の炭化水素基を示し、mは1〜30の整数、特に2
〜20の整数を示す)で示されるポリシロキサンである
ことが好ましい。The diamino polysiloxane has the following general formula (wherein,
R' represents a divalent hydrocarbon residue, and R2 has 1 to 1 carbon atoms.
10 hydrocarbon groups, m is an integer of 1 to 30, especially 2
It is preferable that the polysiloxane is a polysiloxane represented by (representing an integer of 20 to 20).
前記の一般式(f)で示されるジアミノポリシロキサン
としては、
これらのジアミノシロキサンは、mが1〜30の範囲の
ものが好ましく、mが30を越えるものを前述の重合に
用いると、得られるポリイミドシロキサンの分子量が低
くなり、また、有機溶媒に対する溶解性も低下するので
好ましくない。As the diaminopolysiloxane represented by the above general formula (f), these diaminosiloxanes preferably have m in the range of 1 to 30, and when m exceeds 30 is used in the above polymerization, the diaminosiloxane obtained is This is not preferable because the molecular weight of the polyimidosiloxane becomes low and its solubility in organic solvents also decreases.
また、前記の芳香族ジアミンとしては、例えば、4.4
−ジアミノジフェニルエーテル、4,4”−ジアミノジ
フェニルメタン、0−)リジン、0−ジアニシジン、2
,4−ジアミノトルエン、ビス(4−(4アミノフエノ
キシ)フェニル〕スルホン、2.2−ビス〔4”−(4
”−アミノフェノキシ)フェニル]プロパン、1.4−
ビス(4゛−アミノフェノキシ)ベンゼン、4,4”−
ジアミノ−3−モノアミド−ジフェニルエーテルなどの
ベンゼン核を2つ以上有する芳香族ジアミンを好適に挙
げることができる。Further, as the aromatic diamine, for example, 4.4
-diaminodiphenyl ether, 4,4”-diaminodiphenylmethane, 0-)lysine, 0-dianisidine, 2
, 4-diaminotoluene, bis(4-(4aminophenoxy)phenyl)sulfone, 2.2-bis[4”-(4
"-Aminophenoxy)phenyl]propane, 1.4-
Bis(4′-aminophenoxy)benzene, 4,4”-
Preferred examples include aromatic diamines having two or more benzene nuclei such as diamino-3-monoamide-diphenyl ether.
この発明で使用されるポリイミドシロキサンは、ジアミ
ン成分として、ジアミノポリシロキサンが40モル%以
下、特に5〜35モル%の割合で含有されているものを
使用して、芳香族テトラカルボン酸成分と重合して得ら
れたポリマーが好ましく、前記ジアミノポリシロキサン
の含有割合が余りに多くなり過ぎると、充分な耐熱性を
有するポリイミドシロキサンが得られないことがあるの
で好ましくない。The polyimidesiloxane used in this invention contains diaminopolysiloxane as a diamine component in a proportion of 40 mol% or less, particularly 5 to 35 mol%, and is polymerized with an aromatic tetracarboxylic acid component. Polymers obtained by this method are preferable, and if the content of the diaminopolysiloxane is too high, it may not be possible to obtain a polyimidosiloxane having sufficient heat resistance, which is not preferable.
前述のポリイミドシロキサンの製造に使用される重合用
の有機極性溶媒としては、例えば、ジメチルスルホキシ
ド、ジエチルスルホキシドなどのスルホキト系溶媒、N
、N−ジメチルホルムアミド、N、N−ジエチルホルム
アミドなどのホルムアミド系溶媒、N、N−ジメチルア
セトアミド、N、N−ジエチルアセトアミドなどのアセ
トアミド系溶媒、N−メチル−2−ピロリドン、N−エ
チル−2−ピロリドンなどのピロリドン系溶媒、ヘキサ
メチレンホスホアミド、T−ブチルラクトン、ジエチル
グリコールジメリルエーテル、シクロヘキサノンなど、
あるいは、フェノール、o−、m−又はp−クレゾール
、キシレノール、ハロゲン化フェノール(パラクロルフ
ェノール、オルトクロルフェノール、パラブロムフェノ
ールなど)、カテコールなどのフェノール系溶媒などを
挙げることができる。Examples of the organic polar solvent for polymerization used in the production of the above-mentioned polyimidosiloxane include sulfochito-based solvents such as dimethyl sulfoxide and diethyl sulfoxide, N
, N-dimethylformamide, formamide-based solvents such as N,N-diethylformamide, acetamide-based solvents such as N,N-dimethylacetamide, N,N-diethylacetamide, N-methyl-2-pyrrolidone, N-ethyl-2 - Pyrrolidone-based solvents such as pyrrolidone, hexamethylene phosphoamide, T-butyl lactone, diethyl glycol dimeryl ether, cyclohexanone, etc.
Alternatively, phenolic solvents such as phenol, o-, m- or p-cresol, xylenol, halogenated phenol (para-chlorophenol, ortho-chlorophenol, para-bromophenol, etc.), catechol, etc. can be used.
この発明の組成物に使用されている可溶性ポリイミドシ
ロキサンは、高分子量のポリマーであることが好ましく
、例えば、濃度; 0.5 g / 100m l溶媒
(N−メチル−2−ピロリドン)である溶液で、30°
Cの測定温度で測定した対数粘度(ポリマーの重合度の
程度を示す)が、0.1〜2.0、特に、0.2〜1.
5程度であることが好ましい。The soluble polyimidosiloxane used in the composition of this invention is preferably a polymer of high molecular weight, for example in solution at a concentration of 0.5 g/100 ml solvent (N-methyl-2-pyrrolidone). , 30°
The logarithmic viscosity (indicating the degree of polymerization of the polymer) measured at the measurement temperature of C is 0.1 to 2.0, particularly 0.2 to 1.
It is preferable that it is about 5.
この発明の組成物に使用される有機溶媒としては、前述
の可溶性ポリイミドシロキサンの製造において使用され
た有機極性溶媒と同様の有機極性溶媒、又は、それらの
有機極性溶媒にキシレン、エチルセロソルブ、ジオキサ
ン、テトラヒドロフラン(THF)などを一部配合した
混合溶媒が挙げられる。The organic solvent used in the composition of the present invention includes the same organic polar solvents as those used in the production of the above-mentioned soluble polyimidosiloxane, or xylene, ethyl cellosolve, dioxane, etc. Examples include mixed solvents partially containing tetrahydrofuran (THF) and the like.
この発明の組成物を調製する際に使用するポリイミドシ
ロキサン溶液中の可溶性ポリイミドシロキサンの濃度は
、1〜50重量%、特に3〜50重量%とすることが好
ましい。The concentration of soluble polyimidosiloxane in the polyimidosiloxane solution used in preparing the composition of this invention is preferably 1 to 50% by weight, particularly 3 to 50% by weight.
前記のポリイミドシロキサン溶液は、25°Cでの回転
粘度が約0.02〜10000ポイズ、特に0、1〜1
000ポイズであることが好ましい。The polyimidosiloxane solution has a rotational viscosity of about 0.02 to 10,000 poise at 25°C, especially 0, 1 to 1 poise.
000 poise is preferable.
この発明の組成物に使用される1級のアミノ基を一つ有
するシリコン化合物は、一般式(II)Hz N R
3S i (R’) x−k(R5)K (II
)(ただし、R3は、2価の炭化水素残基、または(
C1lz)n+ N H(CHz)nz−であり、n
lおよびR2は1〜3の整数を示し、R4は炭素数1〜
3のアルキル基を示し、R5は炭素数1〜3のアルコキ
シ基を示し、kは0〜3の整数を示す)で示されるアミ
ノシリコン化合物であることが好ましい。The silicon compound having one primary amino group used in the composition of this invention has the general formula (II) Hz N R
3S i (R') x−k(R5)K (II
) (However, R3 is a divalent hydrocarbon residue, or (
C1lz)n+ N H(CHz)nz-, and n
1 and R2 represent integers of 1 to 3, and R4 has 1 to 3 carbon atoms.
3, R5 represents an alkoxy group having 1 to 3 carbon atoms, and k represents an integer of 0 to 3.
前記のアミノシリコン化合物としては、例えば、N−β
(アミノエチル)T−アミノプロピルトリメトキシシラ
ン、N−β(アミノエチル)γ−アミノプロピルメチル
ジメトキシシラン、T−アミノプロピルトリエトキシシ
ランなどを挙げることができる。As the amino silicon compound, for example, N-β
Examples include (aminoethyl)T-aminopropyltrimethoxysilane, N-β(aminoethyl)γ-aminopropylmethyldimethoxysilane, and T-aminopropyltriethoxysilane.
この発明の組成物は、ポリイミドシロキサン溶液に、前
記のアミノシリコン化合物を、前記のポリイミドシロキ
サンに対して0.01〜20重量%、特に0.1〜10
重量%程度となるような割合で添加して得られたものが
好ましい。In the composition of the present invention, the above-mentioned aminosilicon compound is added to the polyimidesiloxane solution in an amount of 0.01 to 20% by weight, particularly 0.1 to 10% by weight based on the polyimidesiloxane.
Preferably, it is added in a proportion of approximately % by weight.
この発明では、前記のアミノシリコン化合物の添加割合
が余りに少なくなった場合には、得られた組成物の密着
性が改良されず、また、前記の添加割合が余りに多くな
り過ぎる場合には、得られた組成物の安定が悪化し、塗
布の際に均一な塗膜が形成されないので好ましくない。In this invention, if the proportion of the amino silicon compound added is too low, the adhesion of the resulting composition is not improved, and if the proportion of the amino silicon compound added is too large, the resulting composition is not improved. This is undesirable because the stability of the resulting composition deteriorates and a uniform coating film is not formed during application.
この発明の組成物においては、前記のポリイミドシロキ
サンと、前記の1級のアミノ基を一つ有するアミノシリ
コン化合物とが一部反応して、ポリイミドシロキサンの
イミド結合が開環されていて、ポリイミドシロキサンが
部分的に変性されているものであってもよい。In the composition of the present invention, the polyimidesiloxane and the aminosilicon compound having one primary amino group partially react to open the imide bond of the polyimidesiloxane, and the polyimidesiloxane may be partially modified.
この発明の組成物性は、25°Cの溶液粘度が、約0.
02〜50000ボイズ、特に0.04〜5000ボイ
ズ程度であることが好ましい。The composition of the present invention has a solution viscosity of about 0.
It is preferably about 0.02 to 50,000 voids, particularly about 0.04 to 5,000 voids.
この発明の組成物によれば、例えば、次のようにして、
電気又は電子材料などの表面に優れた保護膜を形成する
ことができる。According to the composition of this invention, for example, as follows:
An excellent protective film can be formed on the surface of electrical or electronic materials.
この発明の組成物を被覆すべき対象物(回路基板、半導
体など)の表面に、常温または加温下、回転塗布機、デ
イスペンサー又は印刷機などを使用する方法で均一な厚
さに塗布し、この発明の組成物からなる塗布膜を形成し
、次いで、その塗布膜を約50°C以上、特に60〜2
50°Cの温度で、乾燥させることにより、一種のポリ
イミドシロキサンの固化膜(保護膜)を形成することが
できる。The composition of this invention is applied to the surface of the object to be coated (circuit board, semiconductor, etc.) to a uniform thickness at room temperature or under heating using a method such as a rotary coater, dispenser, or printing machine. , forming a coating film consisting of the composition of the present invention, and then heating the coating film at about 50°C or higher, particularly at 60°C to 2°C.
By drying at a temperature of 50°C, a solidified film (protective film) of polyimide siloxane can be formed.
以下に、実施例を挙げ、この発明をさらに詳しく説明す
る。EXAMPLES The present invention will be described in more detail below with reference to Examples.
実施例1
〔可 ポリイミドシロキサンの ゛&]セパラブルフ
ラスコ(撹拌棒、窒素ガス導入口、および水分定量受器
付き)に、
(B)前記の一般式(1)において、m(平均値)が9
.8程度であるrω、ω°−ビス(3−アミノプロピル
)ポリジメチルシロキサンJ6.17g。Example 1 A separable flask (equipped with a stirring rod, a nitrogen gas inlet, and a moisture metering receiver) made of polyimide siloxane was (B) In the above general formula (1), m (average value) was 9
.. 6.17 g of rω,ω°-bis(3-aminopropyl)polydimethylsiloxane J having a value of about 8.
及び(C)「ビス(4−(4’−アミノフェノキシ)フ
ェニル〕スルホンJ12.09gと、
シクロへキサノン91.08 gとを入れ、次いで、(
A) 2,3.3’、4’−ビフェニルテトラカルボン
酸二無水物10.08 gを加えて、そのセパラブルフ
ラスコ内へ窒素ガスを流通して攪拌しながら、そのフラ
スコ内の反応液を150°Cの反応温度で8時間保持し
て、重合およびイミド化を行って、可溶性ポリイミドシ
ロキサンを生成させた。and (C) "Add 12.09 g of bis(4-(4'-aminophenoxy)phenyl)sulfone J and 91.08 g of cyclohexanone, and then add (
A) Add 10.08 g of 2,3.3',4'-biphenyltetracarboxylic dianhydride, and while stirring, flow nitrogen gas into the separable flask, and stir the reaction solution in the flask. The reaction temperature was held at 150° C. for 8 hours to effect polymerization and imidization to produce soluble polyimidosiloxane.
得られた反応液を、攪拌している1乏のメタノール中に
少しずつ加えて、前述の反応で生成しているポリイミド
シロキサンを析出させ、これを濾過する。濾過後、濾過
で得られたポリイミドシロキサン粉末をメタノール80
0mj!の入ったミキサー中で洗浄する。この洗浄を2
回繰り返した後、減圧乾燥して、可溶性ポリイミドシロ
キサンの粉末24.5 gを得た。The obtained reaction solution is added little by little into stirring methanol to precipitate the polyimide siloxane produced in the above reaction, and this is filtered. After filtration, the polyimide siloxane powder obtained by filtration was mixed with 80% methanol.
0mj! Wash in a mixer with water. This cleaning is done 2 times.
After repeating this process several times, it was dried under reduced pressure to obtain 24.5 g of soluble polyimidosiloxane powder.
このポリイミドシロキサン粉末は、濃度;0.5g/1
00mn (N−メチル−2−ピロリドン溶媒)での対
数粘度(30°C)が0.37であった。また、赤外吸
収スペクトル分析を行い、1770cm−’および73
0cm−’にイミド基の吸収が存在することを確認した
。This polyimide siloxane powder has a concentration of 0.5g/1
The logarithmic viscosity (30°C) at 00 mn (N-methyl-2-pyrrolidone solvent) was 0.37. In addition, infrared absorption spectrum analysis was performed, and 1770 cm-' and 73 cm-'
It was confirmed that imide group absorption existed at 0 cm-'.
〔ボ1イミドシロキサン の 〕前述のようにし
て得られたポリイミドシロキサンの粉末12.5 gを
、シクロへキサノン50gに均一に溶解させ、ポリイミ
ドシロキサン溶液を調製し、ついで、(E))J−β(
アミノエチル)γ−アミノプロピルトリメトキシシラン
0.25 gを添加し、均一な状態になるまで攪拌を行
い、ポリイミドシロキサン組成物(25℃溶液粘度;8
.3ボイス)を製造した。[Bo-imidosiloxane] 12.5 g of the polyimidosiloxane powder obtained as described above was uniformly dissolved in 50 g of cyclohexanone to prepare a polyimidosiloxane solution, and then (E)) J- β(
0.25 g of γ-aminopropyltrimethoxysilane (aminoethyl) was added and stirred until a homogeneous state was obtained.
.. 3 voices).
〔剣消印11代狡〕
上述のようにして得られたポリイミドシロキサン組成物
を、ガラス板上に回転塗布機を使用して塗布し、80°
Cで30分間ブリヘーツク後200゛C1300°Cま
たは400°Cで30分間、加熱乾燥して、約3μmの
厚さの薄膜を形成した。[Ken Postmark 11th Kosaku] The polyimide siloxane composition obtained as described above was applied onto a glass plate using a rotary coating machine, and an 80°
After drying at 200°C for 30 minutes at 1300°C or 400°C for 30 minutes, a thin film with a thickness of about 3 μm was formed.
1に
の薄膜で被覆されたガラス板を120 ”Cの飽和蒸気
中に放置し、取り出した直後の膜面にIM間隔のクロス
カットを100個入れ、カット部分6二粘着テープ(ス
リーM社製)を付着させた後、90°方向に勢いよくテ
ープを剥離し、ガラス板上に異常なく残った塗膜の数を
測定した。The glass plate coated with the thin film in step 1 was left in saturated steam at 120"C, and 100 crosscuts with IM spacing were made on the surface of the film immediately after removal. ) was applied, the tape was peeled off vigorously in a 90° direction, and the number of coatings that remained on the glass plate without any abnormalities was measured.
その結果、前記の200℃、300℃、400°Cで3
0分間、加熱乾燥した各試料は、いずれも、試料の飽和
水蒸気中への放置を700時間行っても、100%密着
していた。As a result, 3
Each sample that was heat-dried for 0 minutes remained 100% adherent even when the sample was left in saturated steam for 700 hours.
さらに、ガラス板上と同様に、銅板、金の板、セラミッ
ク板上にポリイミドシロキサン組成物を塗布した後、加
熱、乾燥し、前述と同様の耐湿密着性試験を行った結果
、各試料は、いずれも、試料の飽和水蒸気中への放置を
700時間行っても、100%密着していた。Furthermore, the polyimidesiloxane composition was applied on a copper plate, a gold plate, and a ceramic plate in the same way as on a glass plate, then heated and dried, and the same moisture resistance adhesion test as described above was conducted. As a result, each sample In both cases, 100% adhesion was maintained even after the samples were left in saturated water vapor for 700 hours.
実施例2〜4
第1表に示す重合条件としたほかは、実施例1と同様に
して重合およびイミド化を行い、可溶性ポリイミドシロ
キサンをそれぞれ得た。Examples 2 to 4 Polymerization and imidization were carried out in the same manner as in Example 1 except that the polymerization conditions shown in Table 1 were used to obtain soluble polyimidosiloxanes.
その結果、得られた可溶性ポリイミドシロキサンの収量
、対数粘度を第1表に示す。As a result, the yield and logarithmic viscosity of the obtained soluble polyimidosiloxane are shown in Table 1.
また、得られた各可溶性ポリイミドシロキサンは赤外吸
収スペクトル分析を行い、1770c+n−’および7
30cm−’にイミド基の吸収が存在することをそれぞ
れ確認した。In addition, each of the obtained soluble polyimidesiloxanes was subjected to infrared absorption spectrum analysis, and 1770c+n-' and 7
The presence of imide group absorption at 30 cm-' was confirmed in each case.
また、得られた各可溶性ポリイミドシロキサンを第2表
に示す溶媒の種類、各成分の使用割合としてほかは、実
施例1と同様にしてポリイミドシロキサン組成物を製造
した。Further, polyimidosiloxane compositions were produced in the same manner as in Example 1, except that the types of solvents and the proportions of each component used were as shown in Table 2 for each of the obtained soluble polyimidosiloxanes.
それらのポリイミドシロキサン組成物を用いて実施例1
と同様の耐湿密着性試験を行った。その結果を第3表に
示す。Example 1 using those polyimidesiloxane compositions
A moisture resistant adhesion test similar to that was conducted. The results are shown in Table 3.
実施例5
〔可溶性ポリイミドシロキサンの製造〕セパラブルフラ
スコに、一般式のm(平均値)が9.8であるrω、ω
−ビス(3−アミノプロピル)ポリジメチルシロキサン
453.60g、及び「1゜3−ビス(4′−アミノフ
ェノキシ)ベンゼン44.92gと、NMP368.3
7g、ジグライム122゜79gを入れ、次いで、2,
3.3’、4’−ビフェニルテトラカルボン酸二無水物
64.82 gを加えて、そのセパラブルフラスコ内へ
窒素ガスを流通して攪拌しながら、そのフラスコ内の反
応液を190°Cの反応温度で7時間保持して、重合お
よびイミド化を行って、可溶性ポリイミドシロキサンを
生成させた。Example 5 [Production of soluble polyimide siloxane] In a separable flask, rω, ω whose general formula m (average value) is 9.8
453.60 g of -bis(3-aminopropyl)polydimethylsiloxane, 44.92 g of 1°3-bis(4'-aminophenoxy)benzene, and NMP368.3
Add 7g and 122.79g of diglyme, then add 2.
3. Add 64.82 g of 3',4'-biphenyltetracarboxylic dianhydride, and while flowing nitrogen gas into the separable flask and stirring, the reaction solution in the flask was heated to 190°C. The reaction temperature was held for 7 hours to effect polymerization and imidization to produce soluble polyimidosiloxane.
得られた反応液を攪拌している81のメタノール中に少
しづつ加えて、前述の反応で生成しているポリイミドシ
ロキサンを析出させ、これを濾過した。濾過後、濾過で
得られたポリイミドシロキサン粉末をメタノール6!の
入ったミキサー中で洗浄する。この洗浄を2回繰り返し
た後、減圧、乾燥して、可溶性ポリイミドシロキサン粉
末142、94 gを得た。The resulting reaction solution was added little by little to stirring methanol in 81 to precipitate the polyimide siloxane produced in the above reaction, and this was filtered. After filtration, the polyimide siloxane powder obtained by filtration is mixed with methanol 6! Wash in a mixer with water. After repeating this washing twice, it was dried under reduced pressure to obtain 142.94 g of soluble polyimide siloxane powder.
このポリイミドシロキサン粉末は、30°Cの対数粘度
(濃度i 0.5 g / 100m l溶媒、溶媒;
Nメチル−2−ピロリドン)が0.40であり、また、
赤外吸収スペクトル分析を行った結果、1770cl’
および130cm−’にイミド基の吸収が存在すること
を確認した。This polyimidosiloxane powder has a logarithmic viscosity at 30 °C (concentration i 0.5 g / 100 ml solvent, solvent;
N-methyl-2-pyrrolidone) is 0.40, and
As a result of infrared absorption spectrum analysis, 1770cl'
It was confirmed that imide group absorption existed at 130 cm-'.
〔ポリイミドシロキサン組成物の調製〕前述のようにし
て得られたポリイミドシロキサンの粉末2.50 gを
テトラヒドロフラン47.5gに均一に溶解させ、ポリ
イミドシロキサン溶液を調製し、次いで、(F)γ−ア
ミノプロピルトリメトキシシラン0.25 gを添加し
、均一な状態になるまで攪拌を行い、ポリイミドシロキ
サン組成物(25°Cの溶液粘度、 0.04ポイズ)
を調製した。[Preparation of polyimidosiloxane composition] 2.50 g of the polyimidosiloxane powder obtained as described above was uniformly dissolved in 47.5 g of tetrahydrofuran to prepare a polyimidosiloxane solution, and then (F) γ-amino Add 0.25 g of propyltrimethoxysilane and stir until it becomes homogeneous to form a polyimidosiloxane composition (solution viscosity at 25°C, 0.04 poise).
was prepared.
また、前記のポリイミドシロキサン組成物をテフロン板
に塗布し、80°Cで30分間乾燥させ、フィルムを形
成した。Further, the above polyimide siloxane composition was applied to a Teflon plate and dried at 80°C for 30 minutes to form a film.
このフィルムをテフロン板から剥離し、赤外吸収スペク
トル分析を行った結果、1650cm−’にアミド基の
新たな吸収が確認され、ポリイミドシロキサンのイミド
環の一部が、前述のT−アミノプロピルトリメトキシシ
ランによって開環したと考えられる。This film was peeled off from the Teflon plate and subjected to infrared absorption spectrum analysis. As a result, a new absorption of the amide group was confirmed at 1650 cm-', and a part of the imide ring of polyimidosiloxane was It is thought that the ring was opened by methoxysilane.
比較例1
ポリイミドシロキサン組成物の代わりに、実施例1で調
製したポリイミドシロキサン溶液(アミノシリコン化合
物が含有されていない溶液)を用いて、実施例1と同様
にして薄膜を形成し、この薄膜について、実施例1と同
様にして耐湿密着性試験を行った。その結果、各加熱乾
燥条件で、それぞれ、100%密着していた時間は、2
00°Cで100時間、300°Cで240時間、40
0°Cで260時間であった。Comparative Example 1 A thin film was formed in the same manner as in Example 1 using the polyimide siloxane solution prepared in Example 1 (a solution containing no aminosilicon compound) instead of the polyimide siloxane composition. A moisture resistant adhesion test was conducted in the same manner as in Example 1. As a result, under each heating drying condition, the time for 100% adhesion was 2.
100 hours at 00°C, 240 hours at 300°C, 40
The temperature was 260 hours at 0°C.
第1表
A) :2.3.3”、4”−ビフェニルテトラカル
ボン酸二無水物B):m=9.8のω、ω′−ビス(3
−アミノプロピル)ポリジメチルシロキサンC):ビス
(4−(4”−アミノフェノキシ)フェニル〕スルホン
D) :1,3−ビス(4′−アミノフェノキシ)ヘ
ンゼン※印ニジグライム122.79gとNMP368
.37gとの混合溶媒第2表
第3表
E) :N−β(アミノエチル)T−アミノプロピ
ルトリメトキシシランF) :γ−アミノプロピルト
リメトキシシランNMP:N−メチル−2−ピロリドン
比較例2
重合溶媒としてN−メチル−2−ピロリドンを使用し、
重合反応温度を20°Cとしたほかは、実施例1と同様
にして、重合を行い、その結果、可溶解性のポリアミッ
ク酸を生成した。Table 1 A): 2.3.3", 4"-biphenyltetracarboxylic dianhydride B): ω,ω'-bis(3
-Aminopropyl)polydimethylsiloxane C): Bis(4-(4''-aminophenoxy)phenyl)sulfone D): 1,3-bis(4'-aminophenoxy)Hensen*122.79g of Nidiglyme and NMP368
.. Mixed solvent with 37g Table 2 Table 3 E): N-β(aminoethyl)T-aminopropyltrimethoxysilane F): γ-aminopropyltrimethoxysilane NMP: N-methyl-2-pyrrolidone Comparative Example 2 Using N-methyl-2-pyrrolidone as a polymerization solvent,
Polymerization was carried out in the same manner as in Example 1, except that the polymerization reaction temperature was 20°C, and as a result, soluble polyamic acid was produced.
前記のポリアミック酸は、30°Cの対数粘度が0.4
4であった。The polyamic acid has a logarithmic viscosity of 0.4 at 30°C.
It was 4.
そのポリアミック酸溶液(反応液)に実施例1で使用し
たアミノシリコン化合物を添加して、ポリアミック酸組
成物(25℃の溶液粘度;15ボイズ)を調製した。The amino silicon compound used in Example 1 was added to the polyamic acid solution (reaction liquid) to prepare a polyamic acid composition (solution viscosity at 25° C.; 15 voids).
前述のようにして調製したポリアミック酸組成物を用い
て、薄膜を形成し、その薄膜について、実施例1と同様
の耐湿密着性試験を行った。A thin film was formed using the polyamic acid composition prepared as described above, and the same moisture resistant adhesion test as in Example 1 was conducted on the thin film.
その結果、薄膜が100%密着していた時間は、200
℃で20時間未満、300°Cで240時間、400℃
で420時間であった。As a result, the time that the thin film remained 100% in contact was 200%.
Less than 20 hours at ℃, 240 hours at 300℃, 400℃
It was 420 hours.
この発明のポリイミドシロキサン組成物は、種々の無機
又は金属材料などの表面に対し、優れた塗布性を有し、
また、その塗布層を乾燥及び加熱処理することにより形
成されたポリイミドシロキサンからなる薄膜は、特に加
湿雰囲気下の厳しい環境下でも優れた耐湿密着性を示し
、また、耐熱性をと優れているので、電子部品用の層間
絶縁膜や表面保護膜など形成材料として用いられる。The polyimide siloxane composition of the present invention has excellent coating properties on the surfaces of various inorganic or metallic materials,
In addition, the thin film made of polyimide siloxane formed by drying and heat-treating the coating layer exhibits excellent moisture-resistant adhesion even in harsh environments, especially in humidified atmospheres, and also has excellent heat resistance. It is used as a forming material for interlayer insulation films and surface protection films for electronic components.
特許出願人 宇部興産株式会社Patent applicant: Ube Industries Co., Ltd.
Claims (1)
テトラカルボン酸成分と、ジアミノポリシロキサン及び
芳香族ジアミンを主成分とするジアミン成分とを重合お
よびイミド化して得られた可溶性ポリイミドシロキサン
が有機溶媒に均一に溶解しているポリイミドシロキサン
溶液に、1級のアミノ基を一つ有するアミノシリコン化
合物を添加して得られたポリイミドシロキサン組成物。A soluble polyimidosiloxane obtained by polymerizing and imidizing an aromatic tetracarboxylic acid component mainly composed of biphenyltetracarboxylic acids and a diamine component mainly composed of diaminopolysiloxane and aromatic diamine is uniformly distributed in an organic solvent. A polyimidesiloxane composition obtained by adding an aminosilicon compound having one primary amino group to a dissolved polyimidesiloxane solution.
Priority Applications (1)
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---|---|---|---|
JP63239837A JP2631878B2 (en) | 1988-09-27 | 1988-09-27 | Polyimide siloxane composition and film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63239837A JP2631878B2 (en) | 1988-09-27 | 1988-09-27 | Polyimide siloxane composition and film |
Publications (2)
Publication Number | Publication Date |
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JPH0288677A true JPH0288677A (en) | 1990-03-28 |
JP2631878B2 JP2631878B2 (en) | 1997-07-16 |
Family
ID=17050599
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Application Number | Title | Priority Date | Filing Date |
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JP63239837A Expired - Lifetime JP2631878B2 (en) | 1988-09-27 | 1988-09-27 | Polyimide siloxane composition and film |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100360709B1 (en) * | 1997-12-31 | 2003-01-24 | 제일모직주식회사 | Siloxane polyimide precursor composition and preparation method thereof |
KR100366260B1 (en) * | 1997-12-29 | 2003-03-04 | 제일모직주식회사 | Process for producing polyimide composition for insulation-protecting membrane |
US6789304B2 (en) | 2001-08-30 | 2004-09-14 | Sumitomo Rubber Industries, Ltd. | Golf clubhead and method of manufacturing the same |
US7273423B2 (en) | 2003-12-05 | 2007-09-25 | Bridgestone Sport Corporation | Golf club head |
WO2017086361A1 (en) * | 2015-11-16 | 2017-05-26 | 三井化学株式会社 | Semiconductor film composition, method for manufacturing semiconductor film composition, method for manufacturing semiconductor member, method for manufacturing processing material for semiconductor, and semiconductor device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4772593B2 (en) | 2006-06-06 | 2011-09-14 | 信越化学工業株式会社 | Polyimide silicone resin composition |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6183228A (en) * | 1984-09-29 | 1986-04-26 | Nitto Electric Ind Co Ltd | Solvent-soluble polyimide |
JPS61166053A (en) * | 1985-01-17 | 1986-07-26 | Nitto Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS61171762A (en) * | 1985-01-28 | 1986-08-02 | Japan Synthetic Rubber Co Ltd | Soluble polyimide resin composition |
JPS63189255A (en) * | 1987-01-31 | 1988-08-04 | Toshiba Corp | Thermal head |
JPS63189252A (en) * | 1987-01-31 | 1988-08-04 | Toshiba Corp | Thermal head |
-
1988
- 1988-09-27 JP JP63239837A patent/JP2631878B2/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6183228A (en) * | 1984-09-29 | 1986-04-26 | Nitto Electric Ind Co Ltd | Solvent-soluble polyimide |
JPS61166053A (en) * | 1985-01-17 | 1986-07-26 | Nitto Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS61171762A (en) * | 1985-01-28 | 1986-08-02 | Japan Synthetic Rubber Co Ltd | Soluble polyimide resin composition |
JPS63189255A (en) * | 1987-01-31 | 1988-08-04 | Toshiba Corp | Thermal head |
JPS63189252A (en) * | 1987-01-31 | 1988-08-04 | Toshiba Corp | Thermal head |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100366260B1 (en) * | 1997-12-29 | 2003-03-04 | 제일모직주식회사 | Process for producing polyimide composition for insulation-protecting membrane |
KR100360709B1 (en) * | 1997-12-31 | 2003-01-24 | 제일모직주식회사 | Siloxane polyimide precursor composition and preparation method thereof |
US6789304B2 (en) | 2001-08-30 | 2004-09-14 | Sumitomo Rubber Industries, Ltd. | Golf clubhead and method of manufacturing the same |
US7273423B2 (en) | 2003-12-05 | 2007-09-25 | Bridgestone Sport Corporation | Golf club head |
US7806781B2 (en) | 2003-12-05 | 2010-10-05 | Bridgestone Sports Co., Ltd. | Golf club head |
WO2017086361A1 (en) * | 2015-11-16 | 2017-05-26 | 三井化学株式会社 | Semiconductor film composition, method for manufacturing semiconductor film composition, method for manufacturing semiconductor member, method for manufacturing processing material for semiconductor, and semiconductor device |
JPWO2017086361A1 (en) * | 2015-11-16 | 2018-05-24 | 三井化学株式会社 | Semiconductor film composition, semiconductor film composition manufacturing method, semiconductor member manufacturing method, semiconductor process material manufacturing method, and semiconductor device |
EP3379565A4 (en) * | 2015-11-16 | 2019-06-26 | Mitsui Chemicals, Inc. | Semiconductor film composition, method for manufacturing semiconductor film composition, method for manufacturing semiconductor member, method for manufacturing processing material for semiconductor, and semiconductor device |
US10752805B2 (en) | 2015-11-16 | 2020-08-25 | Mitsui Chemicals, Inc. | Semiconductor film composition, method for manufacturing semiconductor film composition, method for manufacturing semiconductor member, method for manufacturing semiconductor processing material, and semiconductor device |
US11965109B2 (en) | 2015-11-16 | 2024-04-23 | Mitsui Chemicals, Inc. | Semiconductor film composition, method for manufacturing semiconductor film composition, method for manufacturing semiconductor member, method for manufacturing semiconductor processing material, and semiconductor device |
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