JPS6318857B2 - - Google Patents

Info

Publication number
JPS6318857B2
JPS6318857B2 JP55109937A JP10993780A JPS6318857B2 JP S6318857 B2 JPS6318857 B2 JP S6318857B2 JP 55109937 A JP55109937 A JP 55109937A JP 10993780 A JP10993780 A JP 10993780A JP S6318857 B2 JPS6318857 B2 JP S6318857B2
Authority
JP
Japan
Prior art keywords
growth
melt
chamber
hole
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55109937A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5734330A (en
Inventor
Jun Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10993780A priority Critical patent/JPS5734330A/ja
Publication of JPS5734330A publication Critical patent/JPS5734330A/ja
Publication of JPS6318857B2 publication Critical patent/JPS6318857B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP10993780A 1980-08-08 1980-08-08 Liquid epitaxial growth device Granted JPS5734330A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10993780A JPS5734330A (en) 1980-08-08 1980-08-08 Liquid epitaxial growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10993780A JPS5734330A (en) 1980-08-08 1980-08-08 Liquid epitaxial growth device

Publications (2)

Publication Number Publication Date
JPS5734330A JPS5734330A (en) 1982-02-24
JPS6318857B2 true JPS6318857B2 (enrdf_load_stackoverflow) 1988-04-20

Family

ID=14522883

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10993780A Granted JPS5734330A (en) 1980-08-08 1980-08-08 Liquid epitaxial growth device

Country Status (1)

Country Link
JP (1) JPS5734330A (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5364466A (en) * 1976-11-22 1978-06-08 Mitsubishi Electric Corp Semiconductor crystal growth apparatus

Also Published As

Publication number Publication date
JPS5734330A (en) 1982-02-24

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