JPS631740B2 - - Google Patents
Info
- Publication number
- JPS631740B2 JPS631740B2 JP55036553A JP3655380A JPS631740B2 JP S631740 B2 JPS631740 B2 JP S631740B2 JP 55036553 A JP55036553 A JP 55036553A JP 3655380 A JP3655380 A JP 3655380A JP S631740 B2 JPS631740 B2 JP S631740B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- silicon
- frame
- ray
- ray exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3655380A JPS56132343A (en) | 1980-03-22 | 1980-03-22 | Mask for x-ray exposure and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3655380A JPS56132343A (en) | 1980-03-22 | 1980-03-22 | Mask for x-ray exposure and its manufacture |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56132343A JPS56132343A (en) | 1981-10-16 |
JPS631740B2 true JPS631740B2 (en)van) | 1988-01-13 |
Family
ID=12472944
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3655380A Granted JPS56132343A (en) | 1980-03-22 | 1980-03-22 | Mask for x-ray exposure and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56132343A (en)van) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11618953B2 (en) | 2016-11-23 | 2023-04-04 | Institut National De La Recherche Scientifique | System for laser-driven impact acceleration |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5885433A (ja) * | 1981-11-16 | 1983-05-21 | Hitachi Ltd | フオトマスク |
DE3339624A1 (de) * | 1983-11-02 | 1985-05-09 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren zur herstellung einer maske fuer die mustererzeugung in lackschichten mittels roentgenstrahllithographie |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5923104B2 (ja) * | 1976-03-30 | 1984-05-30 | 株式会社東芝 | 軟x線露光用マスクの製造方法 |
JPS5923105B2 (ja) * | 1976-03-30 | 1984-05-30 | 株式会社東芝 | 軟x線露光用マスクの製造方法 |
JPS5375770A (en) * | 1976-12-17 | 1978-07-05 | Hitachi Ltd | X-ray copying mask |
JPS55127559A (en) * | 1979-03-26 | 1980-10-02 | Fujitsu Ltd | Blank mask for x-ray exposure and using method therefor |
-
1980
- 1980-03-22 JP JP3655380A patent/JPS56132343A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11618953B2 (en) | 2016-11-23 | 2023-04-04 | Institut National De La Recherche Scientifique | System for laser-driven impact acceleration |
Also Published As
Publication number | Publication date |
---|---|
JPS56132343A (en) | 1981-10-16 |
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