JPS631740B2 - - Google Patents

Info

Publication number
JPS631740B2
JPS631740B2 JP55036553A JP3655380A JPS631740B2 JP S631740 B2 JPS631740 B2 JP S631740B2 JP 55036553 A JP55036553 A JP 55036553A JP 3655380 A JP3655380 A JP 3655380A JP S631740 B2 JPS631740 B2 JP S631740B2
Authority
JP
Japan
Prior art keywords
substrate
silicon
frame
ray
ray exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55036553A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56132343A (en
Inventor
Tadashi Nakamura
Keizo Hidejima
Teruo Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Original Assignee
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHO ERU ESU AI GIJUTSU KENKYU KUMIAI filed Critical CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority to JP3655380A priority Critical patent/JPS56132343A/ja
Publication of JPS56132343A publication Critical patent/JPS56132343A/ja
Publication of JPS631740B2 publication Critical patent/JPS631740B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP3655380A 1980-03-22 1980-03-22 Mask for x-ray exposure and its manufacture Granted JPS56132343A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3655380A JPS56132343A (en) 1980-03-22 1980-03-22 Mask for x-ray exposure and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3655380A JPS56132343A (en) 1980-03-22 1980-03-22 Mask for x-ray exposure and its manufacture

Publications (2)

Publication Number Publication Date
JPS56132343A JPS56132343A (en) 1981-10-16
JPS631740B2 true JPS631740B2 (en)van) 1988-01-13

Family

ID=12472944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3655380A Granted JPS56132343A (en) 1980-03-22 1980-03-22 Mask for x-ray exposure and its manufacture

Country Status (1)

Country Link
JP (1) JPS56132343A (en)van)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11618953B2 (en) 2016-11-23 2023-04-04 Institut National De La Recherche Scientifique System for laser-driven impact acceleration

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5885433A (ja) * 1981-11-16 1983-05-21 Hitachi Ltd フオトマスク
DE3339624A1 (de) * 1983-11-02 1985-05-09 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zur herstellung einer maske fuer die mustererzeugung in lackschichten mittels roentgenstrahllithographie

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5923104B2 (ja) * 1976-03-30 1984-05-30 株式会社東芝 軟x線露光用マスクの製造方法
JPS5923105B2 (ja) * 1976-03-30 1984-05-30 株式会社東芝 軟x線露光用マスクの製造方法
JPS5375770A (en) * 1976-12-17 1978-07-05 Hitachi Ltd X-ray copying mask
JPS55127559A (en) * 1979-03-26 1980-10-02 Fujitsu Ltd Blank mask for x-ray exposure and using method therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11618953B2 (en) 2016-11-23 2023-04-04 Institut National De La Recherche Scientifique System for laser-driven impact acceleration

Also Published As

Publication number Publication date
JPS56132343A (en) 1981-10-16

Similar Documents

Publication Publication Date Title
US4254174A (en) Supported membrane composite structure and its method of manufacture
US4873163A (en) Photomask material
US4978421A (en) Monolithic silicon membrane device fabrication process
US4632871A (en) Anodic bonding method and apparatus for X-ray masks
US4170512A (en) Method of manufacture of a soft-X-ray mask
US4198263A (en) Mask for soft X-rays and method of manufacture
JPS62115720A (ja) モノリシツク支持体を使用してx線ホトリソグラフイに使用するマスクの製造方法及びその結果得られる構成体
JPS631740B2 (en)van)
KR100282541B1 (ko) 전하빔묘화장치용애퍼추어및그제조방법
JPS5923105B2 (ja) 軟x線露光用マスクの製造方法
JPS5923104B2 (ja) 軟x線露光用マスクの製造方法
JPS6047740B2 (ja) X線露光用マスク及びその製造方法
JPH0345526B2 (en)van)
JPH0322686B2 (en)van)
JPS59163825A (ja) X線露光マスクおよびその製造方法
KR20040095731A (ko) 하전 입자선 노광용 마스크 및 그 제조 방법
KR0175351B1 (ko) X-선 브랭크마스크 및 그의 제조방법
JPS60251620A (ja) X線マスク
JPS58207047A (ja) マスクの製造方法
JPS5931027A (ja) X線マスクの製造方法
JPH06252035A (ja) X線マスクの製造方法
JPS63150918A (ja) X線露光用マスク
JPS61267762A (ja) フォトマスクブランクとフォトマスクの製造方法
JPS6312136A (ja) X線リトグラフ用マスク及びその製造方法
JPS6236669A (ja) 転写マスクおよびその製造方法