JPS63172471A - 不揮発性メモリへの書き込み方法 - Google Patents
不揮発性メモリへの書き込み方法Info
- Publication number
- JPS63172471A JPS63172471A JP62004635A JP463587A JPS63172471A JP S63172471 A JPS63172471 A JP S63172471A JP 62004635 A JP62004635 A JP 62004635A JP 463587 A JP463587 A JP 463587A JP S63172471 A JPS63172471 A JP S63172471A
- Authority
- JP
- Japan
- Prior art keywords
- writing
- volatile
- storage mechanism
- charge storage
- semiconductor region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015654 memory Effects 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 67
- 230000005684 electric field Effects 0.000 claims abstract description 14
- 239000011159 matrix material Substances 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 5
- 238000007667 floating Methods 0.000 abstract description 4
- 239000000969 carrier Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 102100037807 GATOR complex protein MIOS Human genes 0.000 description 2
- 101000950705 Homo sapiens GATOR complex protein MIOS Proteins 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 241001191009 Gymnomyza Species 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- XUFQPHANEAPEMJ-UHFFFAOYSA-N famotidine Chemical compound NC(N)=NC1=NC(CSCCC(N)=NS(N)(=O)=O)=CS1 XUFQPHANEAPEMJ-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- HLXGRHNZZSMNRX-UHFFFAOYSA-M sodium;3-(n-ethyl-3,5-dimethylanilino)-2-hydroxypropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CC(O)CN(CC)C1=CC(C)=CC(C)=C1 HLXGRHNZZSMNRX-UHFFFAOYSA-M 0.000 description 1
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62004635A JPS63172471A (ja) | 1987-01-12 | 1987-01-12 | 不揮発性メモリへの書き込み方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62004635A JPS63172471A (ja) | 1987-01-12 | 1987-01-12 | 不揮発性メモリへの書き込み方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63172471A true JPS63172471A (ja) | 1988-07-16 |
| JPH0563027B2 JPH0563027B2 (enrdf_load_stackoverflow) | 1993-09-09 |
Family
ID=11589463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62004635A Granted JPS63172471A (ja) | 1987-01-12 | 1987-01-12 | 不揮発性メモリへの書き込み方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63172471A (enrdf_load_stackoverflow) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5216269A (en) * | 1989-03-31 | 1993-06-01 | U.S. Philips Corp. | Electrically-programmable semiconductor memories with buried injector region |
| US5394360A (en) * | 1990-07-06 | 1995-02-28 | Sharp Kabushiki Kaisha | Non-volatile large capacity high speed memory with electron injection from a source into a floating gate |
| WO1996018998A1 (en) * | 1994-12-16 | 1996-06-20 | National Semiconductor Corporation | A method for programming a single eprom or flash memory cell to store multiple levels of data |
| WO1996031883A1 (en) * | 1995-04-06 | 1996-10-10 | National Semiconductor Corporation | A method for programming an amg eprom or flash memory when cells of the array are formed to store multiple bits of data |
| US5808937A (en) * | 1994-12-16 | 1998-09-15 | National Semiconductor Corporation | Self-convergent method for programming FLASH and EEPROM memory cells that moves the threshold voltage from an erased threshold voltage range to one of a plurality of programmed threshold voltage ranges |
| US7230847B2 (en) | 2004-12-23 | 2007-06-12 | Sandisk Corporation | Substrate electron injection techniques for programming non-volatile charge storage memory cells |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57105888A (en) * | 1980-12-22 | 1982-07-01 | Ibm | Memory-cell |
-
1987
- 1987-01-12 JP JP62004635A patent/JPS63172471A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57105888A (en) * | 1980-12-22 | 1982-07-01 | Ibm | Memory-cell |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5216269A (en) * | 1989-03-31 | 1993-06-01 | U.S. Philips Corp. | Electrically-programmable semiconductor memories with buried injector region |
| US5394360A (en) * | 1990-07-06 | 1995-02-28 | Sharp Kabushiki Kaisha | Non-volatile large capacity high speed memory with electron injection from a source into a floating gate |
| WO1996018998A1 (en) * | 1994-12-16 | 1996-06-20 | National Semiconductor Corporation | A method for programming a single eprom or flash memory cell to store multiple levels of data |
| US5594685A (en) * | 1994-12-16 | 1997-01-14 | National Semiconductor Corporation | Method for programming a single EPROM or flash memory cell to store multiple bits of data that utilizes a punchthrough current |
| US5808937A (en) * | 1994-12-16 | 1998-09-15 | National Semiconductor Corporation | Self-convergent method for programming FLASH and EEPROM memory cells that moves the threshold voltage from an erased threshold voltage range to one of a plurality of programmed threshold voltage ranges |
| WO1996031883A1 (en) * | 1995-04-06 | 1996-10-10 | National Semiconductor Corporation | A method for programming an amg eprom or flash memory when cells of the array are formed to store multiple bits of data |
| US7230847B2 (en) | 2004-12-23 | 2007-06-12 | Sandisk Corporation | Substrate electron injection techniques for programming non-volatile charge storage memory cells |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0563027B2 (enrdf_load_stackoverflow) | 1993-09-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |