JPS6317221B2 - - Google Patents
Info
- Publication number
- JPS6317221B2 JPS6317221B2 JP55106128A JP10612880A JPS6317221B2 JP S6317221 B2 JPS6317221 B2 JP S6317221B2 JP 55106128 A JP55106128 A JP 55106128A JP 10612880 A JP10612880 A JP 10612880A JP S6317221 B2 JPS6317221 B2 JP S6317221B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- electrode group
- substrate
- container
- plasma cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 60
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 18
- 239000002994 raw material Substances 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 10
- 238000000354 decomposition reaction Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 description 27
- 238000000034 method Methods 0.000 description 21
- 239000011521 glass Substances 0.000 description 10
- 238000007796 conventional method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10612880A JPS5731130A (en) | 1980-07-31 | 1980-07-31 | Method and device for plasma chemical vapour deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10612880A JPS5731130A (en) | 1980-07-31 | 1980-07-31 | Method and device for plasma chemical vapour deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5731130A JPS5731130A (en) | 1982-02-19 |
| JPS6317221B2 true JPS6317221B2 (enrdf_load_stackoverflow) | 1988-04-13 |
Family
ID=14425772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10612880A Granted JPS5731130A (en) | 1980-07-31 | 1980-07-31 | Method and device for plasma chemical vapour deposition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5731130A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100337740C (zh) * | 2004-06-15 | 2007-09-19 | 刘文泉 | 结晶型二氧化钛光触媒及其合成方法 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5916328A (ja) * | 1982-07-19 | 1984-01-27 | Semiconductor Energy Lab Co Ltd | プラズマ気相反応装置 |
| JPH0422349Y2 (enrdf_load_stackoverflow) * | 1985-11-20 | 1992-05-21 | ||
| JPH01157520A (ja) * | 1988-11-18 | 1989-06-20 | Semiconductor Energy Lab Co Ltd | プラズマ気相反応方法 |
| DE102020112641A1 (de) | 2020-05-11 | 2021-11-11 | Hanwha Q Cells Gmbh | Haltevorrichtung und Verwendung der Haltevorrichtung |
-
1980
- 1980-07-31 JP JP10612880A patent/JPS5731130A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100337740C (zh) * | 2004-06-15 | 2007-09-19 | 刘文泉 | 结晶型二氧化钛光触媒及其合成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5731130A (en) | 1982-02-19 |
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