JPS63171454A - Magneto-optical medium - Google Patents
Magneto-optical mediumInfo
- Publication number
- JPS63171454A JPS63171454A JP233987A JP233987A JPS63171454A JP S63171454 A JPS63171454 A JP S63171454A JP 233987 A JP233987 A JP 233987A JP 233987 A JP233987 A JP 233987A JP S63171454 A JPS63171454 A JP S63171454A
- Authority
- JP
- Japan
- Prior art keywords
- magneto
- layer
- substrate
- optical medium
- protective layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 5
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 5
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 4
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 4
- 229910052804 chromium Inorganic materials 0.000 claims abstract 2
- 229910052735 hafnium Inorganic materials 0.000 claims abstract 2
- 229910052719 titanium Inorganic materials 0.000 claims abstract 2
- 229910052726 zirconium Inorganic materials 0.000 claims abstract 2
- 150000004767 nitrides Chemical class 0.000 claims description 21
- 239000002131 composite material Substances 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 11
- 239000010410 layer Substances 0.000 abstract description 29
- 239000011241 protective layer Substances 0.000 abstract description 16
- -1 compound nitride Chemical class 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 7
- 229920003002 synthetic resin Polymers 0.000 abstract description 5
- 239000000057 synthetic resin Substances 0.000 abstract description 5
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 15
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920005668 polycarbonate resin Polymers 0.000 description 2
- 239000004431 polycarbonate resin Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 (産業上の利用分野) 1= 本発明は、光磁気記録等に好適な光磁気媒体−関する。[Detailed description of the invention] (Industrial application field) 1= The present invention relates to a magneto-optical medium suitable for magneto-optical recording and the like.
(従来の技術)
光メモリー素子の中でも追加記録、消去が可能な、er
aaabie溢メ七り−は、光磁気記録媒体が最も実用
化に近い段階にhる。光磁気記録媒体としては総合的な
特性から見て、希土類、遷移金属薄膜が最も優れている
が、致命的欠陥として耐食性に欠けるという欠点が挙げ
られる。(Prior technology) Among optical memory devices, ER is capable of additional recording and erasing.
AAABIE is now on the verge of reaching the stage where magneto-optical recording media are closest to being put to practical use. As a magneto-optical recording medium, thin films of rare earth metals and transition metals are the most excellent in terms of overall characteristics, but a fatal flaw is that they lack corrosion resistance.
すなわち、腐食に伴ない高密度記録の必要条件である保
磁力の低下や高B / M比の必要条件であるカー回転
角の減少、誤)&の増加など多くの欠陥を露呈する事と
なる。In other words, many defects are exposed due to corrosion, such as a decrease in coercive force, which is a necessary condition for high-density recording, a decrease in Kerr rotation angle, which is a necessary condition for a high B/M ratio, and an increase in .
従来、その対策としてはλつの方法がとられてきた。即
ち。Conventionally, two methods have been used to deal with this problem. That is.
(1) 添加物を用いて耐食性を向上する。(1) Improving corrosion resistance using additives.
(−) 保護膜を形成し耐食性を向上する。(-) Forms a protective film to improve corrosion resistance.
本発明は上記2方法のうち保!l膜を用いる方法に注目
しなされたものである・
保護膜としてまず、81へ等の高融点酸化物が提案され
ているが、これらはTt)%ye等との反応性、すなわ
ち、磁性層との界面における反応性が高いので、磁性層
を劣化させるため好ましくなho
さらに1上記酸化物系以外の保護膜として、AlN18
11M、をはじめとする窒化物膜は酸素を含有しない材
質であシ、従って磁性層を酸化させることが少ないので
、良好な保!!特性をもつことが明らかにされて−きた
。しかしながら窒化物は一般に基板との接着性が悪く、
その九めに高温湿下での剥離が問題であった。The present invention is the most effective of the above two methods. First, high melting point oxides such as 81 have been proposed as protective films, but these have high reactivity with Tt)%ye, etc., that is, magnetic layer Since the reactivity at the interface with the oxide layer is high, it is preferable to avoid deteriorating the magnetic layer.
Nitride films such as 11M are made of materials that do not contain oxygen, and therefore are less likely to oxidize the magnetic layer, resulting in good retention. ! It has been revealed that it has certain characteristics. However, nitrides generally have poor adhesion to substrates;
Ninth, peeling under high temperature and humidity was a problem.
更に、光磁気媒体は、合成樹脂やガラス等を基板として
用い、これに磁性層を設けた構造とされているが、特に
基板をポリカーボネート樹脂やアクリル樹脂等の合成樹
脂とした場合、基板と磁性層との親和性不良によるクラ
ックの発生や剥離の発生f1基板に含有されてい九〕、
透過してくる微量の空気や水分等による磁性層の劣化が
問題となるので、保護層は磁性層や基板と親和性があシ
、水分や空気を透過せず、自身も水分や空気等によシ劣
化することがないも湯
のであることが要求されfol、
更に、保護膜を磁性層の光入射側(書込み、読出し光)
K設は九場合には入射光が磁性層に充分に達するだけの
透明性が必要とされる。Furthermore, magneto-optical media have a structure in which a synthetic resin, glass, etc. is used as a substrate and a magnetic layer is provided on this. However, especially when the substrate is made of synthetic resin such as polycarbonate resin or acrylic resin, the magnetic layer and the substrate are Occurrence of cracks and peeling due to poor affinity with the layer f1 Contained in the substrate 9],
Deterioration of the magnetic layer due to small amounts of air or moisture passing through is a problem, so the protective layer has no affinity with the magnetic layer or substrate, does not allow moisture or air to pass through, and is not susceptible to moisture or air. It is required to be hot water that does not deteriorate easily, and in addition, a protective film is placed on the light incident side of the magnetic layer (writing and reading light).
In the K design, transparency is required to allow sufficient incident light to reach the magnetic layer.
窒化物のうち透明で薄膜にしても耐食性の十分あるもの
は、 81.N、、AIMなど極めて限られ九ものであ
シ、Orb%ZrM、Tie%libM、 Tagなど
は耐食性にも優れ、熱的特性も優れているにもかかわら
ず、不透明であるため、光入射側の保護膜には用いるこ
とができなかった。Among nitrides, those that are transparent and have sufficient corrosion resistance even when made into a thin film are: 81. Although there are only a limited number of materials such as N, AIM, Orb%ZrM, Tie%libM, and Tag, which have excellent corrosion resistance and thermal properties, they are opaque and cannot be used on the light incident side. It could not be used as a protective film.
本発明者らは、Al1等の非界面反応性を保ちつつ上述
の欠陥(特に樹脂基板に対する接着性)?:改善する目
的で、保v4膜の検討を行ない、ムIN を含む複合窒
化物が上記の要求を満すことを見出し、本発明に到達し
た。The present inventors solved the above-mentioned defects (particularly the adhesion to resin substrates) while maintaining the non-interfacial reactivity of Al1 etc. : For the purpose of improvement, we investigated the V4 film and found that a composite nitride containing MuIN satisfies the above requirements, leading to the present invention.
すなわち、本発明の要旨は、基板上に光磁気活性層を設
けてなる光磁気媒体において、TI、ZrlHf%V、
11b%Ta、 Or%Mo又はWから選ばれる少な
くとも/[の金属とアルミニウムおよび窒素からなる複
合窒化物を保護膜として形成させてなる光磁気媒体にあ
る。That is, the gist of the present invention is to provide a magneto-optical medium in which a magneto-optical active layer is provided on a substrate, in which TI, ZrlHf%V,
A magneto-optical medium is provided in which a composite nitride consisting of at least a metal selected from 11b% Ta, Or% Mo or W, aluminum and nitrogen is formed as a protective film.
(発明の構成) 以下、本発明の詳細な説明する。(Structure of the invention) The present invention will be explained in detail below.
まず、本発明において用いられる基板としては1.ガラ
ス、アクリル樹脂、ボリカーボネニト樹脂等のプラスチ
ック、又はアルミニウム等の、金属が挙げられるが、本
発明は特にポリカーブネート、アクリル樹脂等の合成樹
脂を基板とした場合にその効果が顕著に発揮される。First, as the substrate used in the present invention, 1. Examples include glass, plastics such as acrylic resins and polycarbonate resins, and metals such as aluminum, but the present invention is particularly effective when using synthetic resins such as polycarbinate and acrylic resins as substrates. .
基板の厚みはl−コ■糧度が一般的である。The thickness of the substrate is generally about 1-2 cm.
この基板上に設けられる光磁気活性層としては、たとえ
ば、TbFe%TbFe0o、 TI)Ooなとの希土
類と遷移金属の非晶質磁性合金、及びMnB1、Mn0
uBi などの多結晶垂直磁化膜が用いられる。特に着
出系の合金磁性声に用いて大変効果的である。Examples of the magneto-optical active layer provided on this substrate include amorphous magnetic alloys of rare earths and transition metals such as TbFe%TbFe0o, TI)Oo, and MnB1, Mn0
A polycrystalline perpendicular magnetization film such as uBi is used. It is particularly effective when used for deposition type alloy magnetic voices.
本発明においては、上5記基板と光磁気活性層の間;光
磁気活性層の上あるいは該層を挾む形でT1、Zr、
Hf%V、 Nb%Ta、 Or、 Mo、 Wの金属
とアルミニウムおよび窒素からなる複合窒化−物を保護
膜として形成させる。In the present invention, T1, Zr,
A composite nitride consisting of metals such as Hf%V, Nb%Ta, Or, Mo, and W, aluminum, and nitrogen is formed as a protective film.
複合窒化物としては、窒化物ムIMとTi)f。Composite nitrides include nitrides IM and Ti)f.
ZrN、 HtM、VM%ypw、Tan、 Orb、
Mob、 WMの窒化物の混合物及び固溶体が挙げら
れる。ZrN, HtM, VM%ypw, Tan, Orb,
Mob, mixtures of nitrides of WM and solid solutions.
これらのうち好ましい窒化物はMbM、 Tanである
。Among these, preferable nitrides are MbM and Tan.
複合窒化物の成分割合は、複合窒化物中のム1原子とそ
の他の金属原子との割合としてA1が’to〜り゛り原
子X程度、A1以外の金属カ/−J−0原子x程度とさ
れるのが良゛い。The component ratio of the composite nitride is as follows: As the ratio of M1 atoms to other metal atoms in the composite nitride, A1 is about 'to' or less than X atoms, and metals other than A1 are about /-J-0 atoms x. It's good to be considered that way.
VM、 Ml+M、 TaMはその金属元素の含量でl
原子力、〜30原子%が好ましい組成筒口である。VM, Ml+M, TaM is the content of the metal element l
Atomic power, ~30 atomic % is the preferred composition.
上記組成の選定条件としては、複合窒化物薄膜の光透過
″JA(光波長的100 nm%膜pi1.1000^
でガラス基板上)が、70X、以上になシ、且つ後述す
るクラックの発生が実質的にな込ように選定することが
好ましbo
上記ムIM以外の窒化物は一種以上を併用することがで
きる。The selection conditions for the above composition are as follows: light transmission of the composite nitride thin film ``JA (light wavelength 100 nm% film pi 1.1000^
(on the glass substrate) is preferably 70X or more, and it is preferable to select it so that the generation of cracks described below is substantially smooth. can.
複合窒化物の保護膜の作成は、以下に述べるような通常
の物理蒸着法(PVD)及びグッズT OV Dのよう
な化学蒸着、アルコキシドなど液相を用いた塗布例えば
スピンコードが考えられる。The composite nitride protective film can be formed by the usual physical vapor deposition (PVD) method as described below, chemical vapor deposition method such as Goods T OV D, or coating using a liquid phase such as alkoxide, such as a spin code.
l)上述の組成をもった窒化物焼結ターゲットを用いて
電子ビーム蒸着またはスパッタリングによシ基板上に保
6膜を堆積する。λ)AINのターゲットと他の2化物
の同時蒸着、またはAIN のターゲット上に他の窒
化物を配置してなる複合ターゲット方式によるスパッタ
リング、3)反応性イオンブレーティング、反応性スパ
ッタリングによる金属ターゲットを用いる方法が考えら
れる。この保護層の膜厚は10A〜JOOO^程度、好
ましくはj0λ〜コOo。l) Deposit a protective film on the substrate by electron beam evaporation or sputtering using a nitride sintered target having the composition described above. λ) Co-evaporation of an AIN target and other nitrides, or sputtering using a composite target method in which another nitride is placed on an AIN target, 3) Metal target formation using reactive ion blasting or reactive sputtering. There are several methods that can be used. The thickness of this protective layer is about 10A to JOOO^, preferably j0λ to KoOo.
A程度から選ばれる。Selected from grade A.
膜の堆積速度は早すぎると基板との親和性を低下させ、
遅すぎれば生産性に影響するので通水発明に係る光磁気
ム体を光磁気記録媒体として用いる場合、上記の複合窒
化物保護層は透明性に優れる九め記録、再生光入射側に
配置して用いるのが望ましい。多くの場合記録再生光は
基板側から入射させるので、本発明の保護膜は多くの場
合基板上に堆積される。If the film deposition rate is too fast, the affinity with the substrate will decrease,
If it is too slow, productivity will be affected, so when the magneto-optical body according to the water passing invention is used as a magneto-optical recording medium, the above-mentioned composite nitride protective layer should be placed on the recording and reproducing light incident side, which has excellent transparency. It is desirable to use the In most cases, the recording/reproducing light is incident from the substrate side, so the protective film of the present invention is often deposited on the substrate.
基板としてガラスを用IA九場合、基板側から水分や空
気が浸入することはほとんどなりので、基板と磁性層と
の間には本発明の保護層を設けず、反対側にのみ設ける
場合もある。When glass is used as the substrate, moisture and air almost never enter from the substrate side, so the protective layer of the present invention may not be provided between the substrate and the magnetic layer, but may be provided only on the opposite side. .
ポリカーボネート等の合成樹脂を基板とした場合には、
基板側からの水分や空気の浸入が考えられるので、基板
と磁性層との間に本発明の保護層を設ける必要がある。When the substrate is made of synthetic resin such as polycarbonate,
Since moisture and air may enter from the substrate side, it is necessary to provide the protective layer of the present invention between the substrate and the magnetic layer.
本発明の保護層を磁性層の1面に採用し、他面aを他の
保護層とすることも考えられ、その場合BN、814N
4. Tie%ZrN%NbN%Tanなどノ窒化物、
または、Tl01It)O,Ta0%B10などの炭化
物、TaBL@ 、0ra1. 、 oosi、、vs
l、、T1ε1■なとのクイ化物等及び酸化ケイ素が保
護層として用いることもできる。勿論本発明の保護層を
他面側に用−ても良い。It is also possible to employ the protective layer of the present invention on one side of the magnetic layer and use the other side a as another protective layer, in which case BN, 814N
4. Nitride such as Tie%ZrN%NbN%Tan,
Or carbides such as Tl01It)O, Ta0%B10, TaBL@, Ora1. , oosi,, vs
Quarride such as T1ε1■ and silicon oxide can also be used as the protective layer. Of course, the protective layer of the present invention may be used on the other side.
本発明の保護層は磁性層との親和性に優れての保護層と
磁性層との間に介在させることも可能である。The protective layer of the present invention can also be interposed between a magnetic layer and a protective layer that has excellent affinity with the magnetic layer.
このような構成をもつ光磁気媒体は、光磁気メモリーの
他に光磁気効果を利用する他のデバイス例えば光アイソ
レーターなどにも用りることができる。A magneto-optical medium having such a configuration can be used not only for magneto-optical memory but also for other devices that utilize the magneto-optical effect, such as optical isolators.
実施例
直径φインチのチク化アルミニウム焼結体ターゲット上
のエロージョン部(ターゲット中心同
よシ半径コ、j5+の円戸上)に/ 0 *wPp、厚
さl■の’ra片を参枚等間隔に配置し、舅、流量j0
800M 、ムr流量/ OBQQM 、 ス/(ツタ
−ガス圧72K torr 、投入高周波電力(z3.
tAvilgm)3oowでlO分間!グネトロンスバ
ッターした新約ztooλの透明なム1Taliから表
る誘電体層を得た。ガラス基板上の上記誘電体薄属の光
透過水はガラス基板の光反射を補正後、光波長t 00
nmでりINlりOOnmで22xであった。Example: On the erosion part of a sintered aluminum target with a diameter of φ inch (at the same radius as the center of the target, on the circular edge of j5+), 0*wPp, thickness l■ 'ra pieces were placed at equal intervals. and the flow rate j0
800M, flow rate/OBQQM, gas pressure 72K torr, input high frequency power (z3.
tAvilgm) 3oow for 10 minutes! A dielectric layer was obtained which appeared from a transparent membrane of new ztooλ which had been subjected to gnetron battering. The light transmitting water of the dielectric thin metal on the glass substrate has a light wavelength t 00 after correcting the light reflection of the glass substrate.
It was 22x in nm, INl, and OOnm.
ポリカーボネート基板を用−AITaM層<toθλ)
−TbFe層(100k ) −AlTali層(zo
oλ)からなる光磁気媒体を作製した。スパッタリング
条件は上述と同様である。Using polycarbonate substrate - AITaM layer<toθλ)
-TbFe layer (100k) -AlTali layer (zo
oλ) was fabricated. The sputtering conditions are the same as described above.
同様にして作製し7’jAIN膜でTbFe層をはさば
んだもので÷÷、ポリカーボネート基板上で作製後剥離
が生じたが、ムIT!LM t−用いたものは生じなか
った。A similar fabrication was made in which a TbFe layer was sandwiched between 7'jAIN films, but peeling occurred after fabrication on a polycarbonate substrate, but MuIT! No results were obtained using LM t-.
(発明の効果)
本発明によれば、記録層の密着性が侵れておシ、経時安
定性の良i光磁気媒体が得られる。(Effects of the Invention) According to the present invention, a magneto-optical medium with good stability over time can be obtained without erosion of the adhesion of the recording layer.
Claims (3)
おいて、Ti、Zr、Hf、V、Nb、Ta、Cr、M
o又はWから選ばれる少なくとも1種の金属とアルミニ
ウムおよび窒素からなる複合窒化物を保護膜として形成
させてなる光磁気媒体。(1) In a magneto-optical medium in which a magneto-optical active layer is provided on a substrate, Ti, Zr, Hf, V, Nb, Ta, Cr, M
1. A magneto-optical medium formed by forming a composite nitride of at least one metal selected from o or W, aluminum and nitrogen as a protective film.
も1種の金属とアルミニウムおよび窒素からなる特許請
求の範囲第1項に記載の光磁気媒体。(2) The magneto-optical medium according to claim 1, wherein the composite nitride comprises at least one metal selected from Nb or Ta, aluminum, and nitrogen.
徴とする特許請求の範囲第1項に記載の光磁気媒体。(3) The magneto-optical medium according to claim 1, wherein the protective film is formed in direct contact with the magnetic layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP233987A JPS63171454A (en) | 1987-01-08 | 1987-01-08 | Magneto-optical medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP233987A JPS63171454A (en) | 1987-01-08 | 1987-01-08 | Magneto-optical medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63171454A true JPS63171454A (en) | 1988-07-15 |
Family
ID=11526542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP233987A Pending JPS63171454A (en) | 1987-01-08 | 1987-01-08 | Magneto-optical medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63171454A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63311642A (en) * | 1987-06-12 | 1988-12-20 | Sharp Corp | Optical memory element |
-
1987
- 1987-01-08 JP JP233987A patent/JPS63171454A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63311642A (en) * | 1987-06-12 | 1988-12-20 | Sharp Corp | Optical memory element |
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