JPS63255855A - Magneto-optical recording medium - Google Patents

Magneto-optical recording medium

Info

Publication number
JPS63255855A
JPS63255855A JP9036987A JP9036987A JPS63255855A JP S63255855 A JPS63255855 A JP S63255855A JP 9036987 A JP9036987 A JP 9036987A JP 9036987 A JP9036987 A JP 9036987A JP S63255855 A JPS63255855 A JP S63255855A
Authority
JP
Japan
Prior art keywords
protective layer
magneto
layer
optical recording
recording medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9036987A
Other languages
Japanese (ja)
Inventor
Yoshimitsu Kobayashi
喜光 小林
Yoshiyuki Shirosaka
欣幸 城阪
Yukio Watabe
行男 渡部
Takashi Kobayashi
孝至 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Kasei Corp
Original Assignee
Mitsubishi Kasei Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Kasei Corp filed Critical Mitsubishi Kasei Corp
Priority to JP9036987A priority Critical patent/JPS63255855A/en
Publication of JPS63255855A publication Critical patent/JPS63255855A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a magneto-optical recording medium which has high recording sensitivity, less noises and excellent stability with lapse of time by constituting an intermediate protective layer and protective layer of specific materials. CONSTITUTION:The intermediate protective layer of the magneto-optical recording medium constituted by providing the intermediate protective layer, a magneto-optical recording layer and the protective layer successively on a substrate is a layer consisting of at least one compd. selected from a group consisting of aluminum oxide, tantalum oxide and nitride, and the protective layer is a layer consisting of SiO. The oxides of the aluminum and tantalum and the nitride are dense to prevent the infiltration of moisture and oxygen from the outside, is highly resistant to corrosion, is small in reactivity with the magneto-optical recording layer and has excellent adhesiveness to the resin in the case of using a resin substrate as the substrate. The content of 0 in the compsn. of SiO is particularly preferably about 0.5-1.6. The corrosion resistance of the recording is thereby sufficiently improved and the recording medium having the good durability and recording sensitivity and excellent productivity is obtd.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、光学的記録に用いる光磁気記録媒体に関する
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a magneto-optical recording medium used for optical recording.

(従来の技術とその問題点) 光メモリー素子の中でも追加記録、消去が可能な、イレ
ーザブル型メモリーは、光磁気記録方式が最も実用化に
近い段階にいる。光磁気記録媒体としては総合的な特性
から見て、希土類、遷移金属薄膜が最も優れているが、
致命的欠陥として耐食性に欠けるという欠点が挙げられ
る。
(Prior art and its problems) Among optical memory devices, magneto-optical recording is at the closest stage to practical use for erasable memory, which allows additional recording and erasure. Rare earth and transition metal thin films are the best in terms of overall properties as magneto-optical recording media.
A fatal flaw is that it lacks corrosion resistance.

すなわち、腐食に伴ない高密度記録の必要条件である保
磁力の低下や高S/N比の必要条件であるカー回転角の
減少、誤り率の増加など多くの欠陥を露呈する事となる
That is, many defects are exposed due to corrosion, such as a decrease in coercive force, which is a necessary condition for high-density recording, a decrease in Kerr rotation angle, which is a necessary condition for a high S/N ratio, and an increase in error rate.

従来、その対策としては2つの方法がとられてきた。即
ち、 (i)記録層に添加物を添加して耐食性を向上する。
Conventionally, two methods have been taken as countermeasures. That is, (i) adding additives to the recording layer to improve corrosion resistance;

(ii )記録層の両側に保護層を設は耐食性を向上す
る。
(ii) Providing protective layers on both sides of the recording layer improves corrosion resistance.

本発明は、保護層を用いる方法に注目してなされたもの
である。
The present invention has been made by focusing on a method using a protective layer.

すなわち、本発明の光磁気記録媒体は基本的に基板−保
護層一記録層一保護層の構成とされたものである。
That is, the magneto-optical recording medium of the present invention basically has a structure of a substrate, a protective layer, a recording layer, and a protective layer.

以降の説明の便宜上基板と記録層との間の保護層を中間
保護層、記録層の基板と反対側に設けられた保護層を保
護層と呼ぶこととする。
For convenience of explanation below, the protective layer between the substrate and the recording layer will be referred to as an intermediate protective layer, and the protective layer provided on the opposite side of the recording layer to the substrate will be referred to as a protective layer.

保護層や中間保護層としてはへ2□03等の高融点酸化
物やStNやAfN等の高融点チッ化物等が提案されて
いる。
As the protective layer and intermediate protective layer, high melting point oxides such as He2□03 and high melting point nitrides such as StN and AfN have been proposed.

しかしながら、これらの物質には、夫々問題点があり、
中間保amと保護層の両層を構成するに満足なものは見
出されていない。
However, each of these substances has its own problems.
No material has been found that is satisfactory for forming both the intermediate protective layer and the protective layer.

これは、中間保護層として必要な物性は、記録層と反応
しないこと、基板との密着性が良いこと、透明性に優れ
ること、屈折率の大きいこと、ガスバリヤ−性に優れる
こと等であるのに対し、保護層としての必要物性は、記
録層と反応しないこと、ガスバリヤ−性に優れること等
は共通するが、透明性や屈折率は要件とせず、むしろ熱
伝導率の低いことがより重要となり、必要物性が夫々異
なるためである。
This is because the physical properties required for an intermediate protective layer include not reacting with the recording layer, good adhesion to the substrate, excellent transparency, high refractive index, and excellent gas barrier properties. On the other hand, the physical properties necessary for a protective layer are common, such as not reacting with the recording layer and having excellent gas barrier properties, but transparency and refractive index are not required; rather, low thermal conductivity is more important. This is because the required physical properties are different for each.

本発明者等はこれらの保護層及び中間保護層に関し、種
々検討を行なった結果、中間保護層と保護層を特定の物
質で構成することにより記録感度が高く、ノイズの少な
い、また経時安定性に優れた光磁気記録媒体が得られる
ことを見出した。
The present inventors have conducted various studies regarding these protective layers and intermediate protective layers, and have found that by composing the intermediate protective layer and protective layer with specific materials, recording sensitivity is high, noise is low, and stability over time is improved. It has been found that a magneto-optical recording medium with excellent properties can be obtained.

〔発明の構成〕[Structure of the invention]

一本発明の要旨は、基板上に中間保護層、光磁気記録層
および保護層を順次設けてなる光磁気記録媒体において
、中間保護層が(イ)アルミニウム酸化物、(ロ)タン
タル酸化物および(ハ)チッ化物からなる群から選択さ
れた少なくとも1つの化合物からなる層であり、保護層
がSiOからなる層であることを特徴とする光磁気記録
媒体に存する。
The gist of the present invention is to provide a magneto-optical recording medium in which an intermediate protective layer, a magneto-optical recording layer and a protective layer are sequentially provided on a substrate, in which the intermediate protective layer is made of (a) aluminum oxide, (b) tantalum oxide and (c) A magneto-optical recording medium characterized in that the layer is made of at least one compound selected from the group consisting of nitrides, and the protective layer is a layer made of SiO.

以下、本発明の詳細な説明する。The present invention will be explained in detail below.

まず、本発明において用いられる基板としては、ガラス
、アクリル樹脂、ポリカーボネート樹脂等のプラスチッ
ク、又はアルミニウム等の金属、ガラス上に溝つき樹脂
を形成した基板等が挙げられる。
First, examples of the substrate used in the present invention include glass, plastics such as acrylic resin and polycarbonate resin, metals such as aluminum, and substrates in which grooved resin is formed on glass.

基板の厚みは1〜2111111程度が一般的である。The thickness of the substrate is generally about 1 to 2111111 mm.

光磁気記録層としては、たとえば、TbFe、 TbF
eCo。
As the magneto-optical recording layer, for example, TbFe, TbF
eCo.

TbCo、 DyFeCoなどの希土類と遷移金属の非
晶質磁性合金、及びMnB1. MnCuB1などの多
結晶垂直磁化膜が用いられる。特に希土系の合金磁性膜
に用いて大変効果的である。光磁気記録層の膜厚は30
0〜1500人、好ましくは500〜800人である。
Amorphous magnetic alloys of rare earths and transition metals such as TbCo, DyFeCo, and MnB1. A polycrystalline perpendicular magnetization film such as MnCuB1 is used. It is particularly effective for use in rare earth alloy magnetic films. The thickness of the magneto-optical recording layer is 30
0 to 1500 people, preferably 500 to 800 people.

本発明においては、上記基板と光磁気記録層の間にアル
ミニウム酸化物、タンタル酸化物またはチッ化物を含む
層を中間保護層として形成させる。
In the present invention, a layer containing aluminum oxide, tantalum oxide, or nitride is formed as an intermediate protective layer between the substrate and the magneto-optical recording layer.

アルミニウム酸化物としてはA ffi zo3等、タ
ンタル酸化物としてはTa、05等の酸化物単独あるい
はこれらの混合物、あるいはl/! −Ta−0の複合
酸化物等が挙げられる。また更にこれらに他の元素、例
えばSi+ Ti+ Zr、 It4. Mo、 Yb
等が酸化物の形で単独あるいは^42.Taと複合して
酸化物を形成していてもよい。これらのアルミニウム、
タンタルの酸化物は緻密で外部からの水分や酸素の侵入
を防ぎ、耐食性が貰く光磁気記録層との反応性も小であ
り、また、基板として樹脂基板を使用する場合にも樹脂
との密着性に優れる。
Aluminum oxides include A ffi zo3, tantalum oxides include Ta, 05, and other oxides alone or in combination, or l/! -Ta-0 complex oxide, etc. can be mentioned. Furthermore, other elements such as Si+Ti+Zr, It4. Mo, Yb
etc. alone in the form of oxide or ^42. It may be combined with Ta to form an oxide. These aluminum,
Tantalum oxide is dense and prevents moisture and oxygen from entering from the outside, and has low reactivity with the magneto-optical recording layer, which provides corrosion resistance.Also, when using a resin substrate as a substrate, it has low reactivity with the resin. Excellent adhesion.

チッ化物としては、具体的にはケイ素、アルミニウム、
ゲルマニウム等の金属のチッ化物あるいはこれらの2種
以上の複合チッ化物、又はこれらとニオブ、タンタル等
との複合チッ化物(SiNbN。
Specifically, nitrides include silicon, aluminum,
Metal nitrides such as germanium, composite nitrides of two or more of these, or composite nitrides of these with niobium, tantalum, etc. (SiNbN).

5iTaN等)が挙げられる。なかでもSiを含有する
チッ化物が良好な結果をもたらす。
5iTaN, etc.). Among them, nitrides containing Si give good results.

チッ化物は緻密で外部からの水分や酸素の侵入を防ぎ、
それ自身が耐食性が高く光磁気記録層との反応性が小で
あり、また基板として樹脂基板を使用する場合にも樹脂
との密着性が高い。
Nitride is dense and prevents moisture and oxygen from entering from the outside.
It itself has high corrosion resistance and low reactivity with the magneto-optical recording layer, and also has high adhesion to the resin when a resin substrate is used as the substrate.

光磁気記録層上にはSiOからなる保護層を設けるが、
このSi0層はSiO□より酸素が欠乏した状態のもの
である。このSi0層は例えばスパッター法で作製する
場合SiO(St : 0 =約1:1)の焼結ターゲ
ットをAr等の不活性ガスでスパッターするか、Stツ
タ−ットを通常SiO□を得る条件よりAr −0□混
合ガス中の0□量を少なくすることにより得られる。こ
のSiOの生成は、同一製法で作成した場合SiO□が
屈折率1.4〜1.5であるのに対しSiOは1.8〜
2.3程度になることからも確認できる。具体的には、
Arと0□のガス流量比Oz / Ar + Oz =
 0.2〜0.5程度が一般的であるが作製する装置や
成膜速度にも大きく依存する。
A protective layer made of SiO is provided on the magneto-optical recording layer, but
This Si0 layer is in a state deficient in oxygen compared to SiO□. For example, when this Si0 layer is produced by a sputtering method, a sintered target of SiO (St: 0 = approximately 1:1) is sputtered with an inert gas such as Ar, or a St target is normally used to obtain SiO□. This can be obtained by reducing the amount of 0□ in the Ar -0□ mixed gas. When produced using the same manufacturing method, SiO□ has a refractive index of 1.4 to 1.5, whereas SiO has a refractive index of 1.8 to 1.5.
This can be confirmed from the fact that it is about 2.3. in particular,
Gas flow rate ratio of Ar and 0□ Oz / Ar + Oz =
It is generally about 0.2 to 0.5, but it largely depends on the manufacturing equipment and film formation rate.

一般にSiOの組成はOが多ければ光磁気記録層と反応
し易く、少な過ぎるとクランクを生じ易いといった欠点
があるため、特にOが0.5〜1.6程度が特に好まし
い範囲である。
In general, the composition of SiO has the drawback that if there is too much O, it tends to react with the magneto-optical recording layer, and if it is too little, it tends to cause cranking.

基板上にアルミ酸化物、タンタル酸化物又はチッ化物の
保護層、光磁気記録層およびSiO保護層の各層を形成
するには、物理蒸着法(PVD) 、プラズマCVDの
ような化学蒸着法等が適用される。
Physical vapor deposition (PVD), chemical vapor deposition such as plasma CVD, etc. are used to form a protective layer of aluminum oxide, tantalum oxide, or nitride, a magneto-optical recording layer, and a SiO protective layer on a substrate. Applicable.

PVD法にて光磁気記録層やSiOからなる保護層を成
膜形成するには、所定の組成をもったSiO焼結ターゲ
ット等を用いて電子ビーム蒸着またはスパッタリングに
より基板上に各層を堆積するのが通常の方法であるが、
電子ビーム蒸着の場合には高エネルギー粒子を膜に照射
しつつ蒸着するか、またスパッタリングの際にはArガ
ス圧を低くすることにより膜の密度が上がり安定な膜が
得られるので好ましい。
To form a magneto-optical recording layer and a protective layer made of SiO using the PVD method, each layer is deposited on a substrate by electron beam evaporation or sputtering using a SiO sintered target with a predetermined composition. is the usual method, but
In the case of electron beam evaporation, it is preferable to perform the evaporation while irradiating the film with high-energy particles, or to lower the Ar gas pressure during sputtering, since the density of the film increases and a stable film can be obtained.

また、反応性イオンブレーティング、反応性スパッタリ
ングにおいてSiターゲットを用いる方法も考えられる
Furthermore, a method of using a Si target in reactive ion blating and reactive sputtering is also considered.

膜の堆積速度は早すぎると膜応力を増加させ、遅すぎれ
ば生産性に影響するので通常0.1人/sec〜100
人/sec、好ましくは1人/sec〜20人/sec
とされる。
If the film deposition rate is too fast, it will increase the film stress, and if it is too slow, it will affect productivity, so it is usually 0.1 person/sec to 100 people/sec.
person/sec, preferably 1 person/sec to 20 people/sec
It is said that

SiOからなる保護層の膜厚は10人〜5000人程度
、好ましくは50人〜1000人程度から選ばれる。
The thickness of the protective layer made of SiO is selected from about 10 to 5,000 layers, preferably from about 50 to 1,000 layers.

本発明においてはSiO保護層のほかに、Si0層のガ
スバリヤ−性を補強するためSiO□などのケイ酸ガラ
ス層を50〜1000人程度SiO層上に積層したり、
更に樹脂などをコーティングしてもよい、またチッ化物
層を中間保護層として用いる場合にはチッ化物層と基板
との間に100〜300人程度のA2□03+ StO
□とテフロンの混合膜等を下引き層として設けて接着性
を高めるのもよい。
In the present invention, in addition to the SiO protective layer, in order to reinforce the gas barrier properties of the SiO layer, a silicate glass layer such as SiO
Furthermore, it may be coated with a resin or the like, and when a nitride layer is used as an intermediate protective layer, about 100 to 300 A2□03+ StO layers are placed between the nitride layer and the substrate.
It is also good to provide a mixed film of □ and Teflon as an undercoat layer to improve adhesion.

〔実施例] 実施例1 ポリカーボネート基板を用い、5インチφA2□0゜焼
結ターゲット上に、Ta、O,の厚さ1鵬、径9III
lnφの焼結ベレットを配置し、Arガス中でRFスパ
ッターを行ない800人の中間保護膜を形成した。中間
保護膜のAj!:Ta比(原子比)は2:8であった。
[Example] Example 1 Using a polycarbonate substrate, a sintered target of 5 inches φA2□0° was coated with Ta, O, with a thickness of 1 inch and a diameter of 9 III.
A sintered pellet of lnφ was placed, and RF sputtering was performed in Ar gas to form an intermediate protective film of 800 layers. Aj of intermediate protective film! :Ta ratio (atomic ratio) was 2:8.

4インチφのSiOターゲットと、Tb10m1口×1
 mm tの小片をFeターゲット上に配置したターゲ
ットを設置し、3 X 10−’torr以下まで排気
した。
4 inch φ SiO target and Tb10m 1 mouth x 1
A target with a small piece of mm t placed on an Fe target was set up and evacuated to below 3 x 10-'torr.

基板とターゲットの距離95mm、Ar流量30SCC
Mとする。スパッターガス圧3 n+torrでプレス
バッターの後、直流電力(DC) 300 Wで1分間
スパッターL100O人のTbFe膜を作製し、続いて
同一真空中でAr流t 30 SCCM%スパッター圧
力3 mtorr高周波(RF)電力200WでSiO
ターゲットをスパッター1. SiO(Si :O=約
1:1)膜を800人堆積した。尚SiOのスパッター
速度は7人/secと高速であり、基板の変質はなかっ
た。
Distance between substrate and target 95mm, Ar flow rate 30SCC
Let it be M. After press batter at a sputtering gas pressure of 3 n+torr, a TbFe film of L1000 was sputtered for 1 minute at a direct current power (DC) of 300 W, followed by an Ar flow of t30 SCCM% sputtering pressure of 3 mtorr in the same vacuum, followed by radio frequency (RF) ) SiO at 200W power
Sputter the target 1. 800 people deposited a SiO (Si:O=about 1:1) film. The SiO sputtering speed was as high as 7 people/sec, and there was no deterioration of the substrate.

この光磁気記録媒体をAPD (アバランシェホトダイ
オード)非差動検出器をもった、動特性検出器により記
録感度、C/N比を測定した。記録感度は、2次歪みが
最小のところの記録パワーとした。
The recording sensitivity and C/N ratio of this magneto-optical recording medium were measured using a dynamic characteristic detector equipped with an APD (avalanche photodiode) non-differential detector. The recording sensitivity was set to the recording power at which the second-order distortion was minimum.

記録条件:CLV(定線速度)4m/s半径53m位置
、溝間記録 記録周波数1.0 MHz duty50% 再生条件: CLV 4 m/ s 再生パワー0.8mW 16回の平均値 本実施例では記録感度2.35mW、C/N比34dB
であり、本実施例では比較例1に比べ記録パワーが20
%向上し、C/N比は1dBの低下にとどまった。
Recording conditions: CLV (constant linear velocity) 4 m/s Radius 53 m position, recording between grooves Recording frequency 1.0 MHz duty 50% Reproducing conditions: CLV 4 m/s Reproducing power 0.8 mW Average value of 16 times Recording in this example Sensitivity 2.35mW, C/N ratio 34dB
In this example, the recording power was 20% compared to Comparative Example 1.
%, and the C/N ratio decreased by only 1 dB.

なお静特性としては、カー回転角測定においてカー回転
角0.15°、反射率44%、抗磁力2.4KGのTb
リッチ組成のヒステリシスをもっていた。
As for the static characteristics, in the Kerr rotation angle measurement, the Kerr rotation angle was 0.15°, the reflectance was 44%, and the Tb had a coercive force of 2.4 KG.
It had rich composition hysteresis.

尚この構成の媒体を70°C85%RHの高温高湿器に
2日問いれても剥離等の発生はなかった。
Even when the medium with this configuration was placed in a high-temperature, high-humidity chamber at 70° C. and 85% RH for two days, no peeling occurred.

比較例1 実施例1と同様にTbFe層までを作製し、次に中間係
護膜と同じ組成の保護層を800人形成した。
Comparative Example 1 The layers up to the TbFe layer were fabricated in the same manner as in Example 1, and then a protective layer having the same composition as the intermediate protective film was formed by 800 people.

実施例1と同一の条件にて記録感度、C/N比を測定し
た所、記録感度2.85mW、C/N比35dBであっ
た。(APD非差動系のかわりに差動光学系で再生した
場合、PCRでは一般に10dBのC/N比が向上する
ことが実験的にわかっている。)実施例2 ポリカーボネート(PCR)基板上に、Siターゲット
をAr : N、流量比1:5で反応性スパッターする
ことによりSiN膜を800人設け、次にTbFeCo
膜1000人、さらにSiO焼結ターゲットをArガス
圧3+*torrでスパッターして5in(Si: 0
=約1:1)膜を800人設けた。ここでTbFeCo
膜中Tb量は約25at%、Co量はFeCo中10a
t%であった。
The recording sensitivity and C/N ratio were measured under the same conditions as in Example 1, and the recording sensitivity was 2.85 mW and the C/N ratio was 35 dB. (It has been experimentally found that when reproducing using a differential optical system instead of an APD non-differential system, the C/N ratio in PCR generally improves by 10 dB.) Example 2 On a polycarbonate (PCR) substrate , a SiN film was deposited by reactive sputtering of a Si target with Ar:N at a flow rate ratio of 1:5, and then TbFeCo
A film of 1,000 layers and a SiO sintered target were sputtered at an Ar gas pressure of 3+*torr to form a 5 inch (Si: 0
= approximately 1:1) 800 people provided the membrane. Here, TbFeCo
The amount of Tb in the film is approximately 25 at%, and the amount of Co is 10 a in FeCo.
It was t%.

この光磁気記録媒体をPIN差動検出器を備えた動特性
測定機によりC/N比、記録感度を測定した。
The C/N ratio and recording sensitivity of this magneto-optical recording medium were measured using a dynamic characteristic measuring machine equipped with a PIN differential detector.

記録感度は2次歪が最小のところの記録パワーとした。The recording sensitivity was set to the recording power at which the second-order distortion was minimum.

記録条件:CAV(定角速度)1800rpm半径30
InI+1位置、溝間記録 記録周波数0.5 MHz duty50% 再生条件:CAV 1800rpm 再生パワー1.5mW この時C/N比53dB、記録感度5.6mWであり、
C/N比はSiNとほぼ同等で記録感度が10%向上し
た。
Recording conditions: CAV (constant angular velocity) 1800 rpm radius 30
InI+1 position, recording between grooves Recording frequency 0.5 MHz duty 50% Reproduction conditions: CAV 1800 rpm Reproduction power 1.5 mW At this time, the C/N ratio was 53 dB and the recording sensitivity was 5.6 mW.
The C/N ratio was almost the same as that of SiN, and the recording sensitivity was improved by 10%.

比較例2 実施例2と同条件下に、TbFeCo記録層の両面にS
iN層を設けたものについて、実施例と同一条件で動特
性を測定した。C/N比は53.5dB、記録感度は6
.4mWであった。
Comparative Example 2 Under the same conditions as Example 2, S was applied on both sides of the TbFeCo recording layer.
The dynamic characteristics of the product provided with the iN layer were measured under the same conditions as in the example. C/N ratio is 53.5dB, recording sensitivity is 6
.. It was 4mW.

比較例3 比較例2と同条件下にSiN層に替え記録層の両面をS
iターゲットをAr10□のガス中で反応性スパッター
することにより得たSiO,、(x =約0.7)とし
たものについて動特性を測定した。C/N比は52dB
、記録感度は5.21であった。
Comparative Example 3 Under the same conditions as Comparative Example 2, both sides of the recording layer were replaced with SiN layers.
The dynamic characteristics were measured using an i target of SiO, (x = approximately 0.7) obtained by reactive sputtering in Ar10□ gas. C/N ratio is 52dB
The recording sensitivity was 5.21.

〔発明の効果] 本発明の光磁気記録媒体は光磁気記録層の耐食性が充分
改良され耐久性が良く、且つ記録感度も良好で、また生
産性にも優れる。
[Effects of the Invention] The magneto-optical recording medium of the present invention has sufficiently improved corrosion resistance of the magneto-optical recording layer, has good durability, has good recording sensitivity, and is also excellent in productivity.

出  願  人 三菱化成工業株式会社代理人 弁理士
 長谷用     − (ほか1名)
Applicant Mitsubishi Chemical Industries, Ltd. Agent Patent Attorney Yo Hase - (1 other person)

Claims (2)

【特許請求の範囲】[Claims] (1)基板上に中間保護層、光磁気記録層および保護層
を順次設けてなる光磁気記録媒体において、中間保護層
が(イ)アルミニウム酸化物、(ロ)タンタル酸化物お
よび(ハ)チッ化物からなる群から選択された少なくと
も1つの化合物からなる層であり、保護層がSiOから
なる層であることを特徴とする光磁気記録媒体。
(1) In a magneto-optical recording medium in which an intermediate protective layer, a magneto-optical recording layer and a protective layer are sequentially provided on a substrate, the intermediate protective layer is made of (a) aluminum oxide, (b) tantalum oxide and (c) chip. 1. A magneto-optical recording medium characterized in that the layer is made of at least one compound selected from the group consisting of compounds, and the protective layer is a layer made of SiO.
(2)チッ化物が含ケイ素チッ化物である特許請求の範
囲第1項記載の光磁気記録媒体。
(2) The magneto-optical recording medium according to claim 1, wherein the nitride is a silicon-containing nitride.
JP9036987A 1987-04-13 1987-04-13 Magneto-optical recording medium Pending JPS63255855A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9036987A JPS63255855A (en) 1987-04-13 1987-04-13 Magneto-optical recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9036987A JPS63255855A (en) 1987-04-13 1987-04-13 Magneto-optical recording medium

Publications (1)

Publication Number Publication Date
JPS63255855A true JPS63255855A (en) 1988-10-24

Family

ID=13996639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9036987A Pending JPS63255855A (en) 1987-04-13 1987-04-13 Magneto-optical recording medium

Country Status (1)

Country Link
JP (1) JPS63255855A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5192626A (en) * 1988-12-14 1993-03-09 Teijin Limited Optical recording medium
US5560998A (en) * 1990-03-27 1996-10-01 Teijin Limited Magneto-optical recording medium

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5192626A (en) * 1988-12-14 1993-03-09 Teijin Limited Optical recording medium
US5560998A (en) * 1990-03-27 1996-10-01 Teijin Limited Magneto-optical recording medium

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