JPH04219650A - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JPH04219650A JPH04219650A JP3086023A JP8602391A JPH04219650A JP H04219650 A JPH04219650 A JP H04219650A JP 3086023 A JP3086023 A JP 3086023A JP 8602391 A JP8602391 A JP 8602391A JP H04219650 A JPH04219650 A JP H04219650A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- recording medium
- recording layer
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 12
- 239000010410 layer Substances 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 150000004767 nitrides Chemical class 0.000 claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000203 mixture Substances 0.000 claims abstract description 15
- 239000011241 protective layer Substances 0.000 claims abstract description 9
- 239000004033 plastic Substances 0.000 claims abstract description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract description 7
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 7
- 239000000377 silicon dioxide Substances 0.000 abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 7
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract description 7
- 125000006850 spacer group Chemical group 0.000 abstract description 7
- 229910052682 stishovite Inorganic materials 0.000 abstract description 7
- 229910052905 tridymite Inorganic materials 0.000 abstract description 7
- 230000007797 corrosion Effects 0.000 abstract description 6
- 238000005260 corrosion Methods 0.000 abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 abstract description 5
- 239000001301 oxygen Substances 0.000 abstract description 5
- 230000001681 protective effect Effects 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract description 2
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 229910017061 Fe Co Inorganic materials 0.000 abstract 1
- 239000011247 coating layer Substances 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 239000010408 film Substances 0.000 description 28
- 239000010409 thin film Substances 0.000 description 14
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 150000001786 chalcogen compounds Chemical class 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910019590 Cr-N Inorganic materials 0.000 description 1
- 229910019588 Cr—N Inorganic materials 0.000 description 1
- 229910016629 MnBi Inorganic materials 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 229910007744 Zr—N Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、光ビームにより記録・
再生を行うことが可能な光学的記録媒体に関する。[Industrial Application Field] The present invention provides recording and recording using a light beam.
The present invention relates to an optical recording medium that can be reproduced.
【0002】0002
【従来の技術】従来より、光ディスクに用いられる光学
的記録媒体としては、希土類−遷移金属の合金薄膜、非
晶質から結晶質への相転移を利用したカルコゲン化合物
等の還元性酸化物薄膜、ヒートモード記録媒体、サーモ
プラスチック記録媒体等が知られている。例えば、希土
類−遷移金属の合金薄膜で形成される光磁気記録媒体と
しては、 MnBi, MnCuBi などの多結晶薄
膜、GdCo, GdFe, TbFe, DyFe,
GdTbFe,TbDyFeなどの非晶質薄膜、 T
bFeO3 などの単結晶薄膜などが知られている。[Prior Art] Conventionally, optical recording media used in optical discs include thin films of rare earth-transition metal alloys, thin films of reducing oxides such as chalcogen compounds that utilize phase transition from amorphous to crystalline, Heat mode recording media, thermoplastic recording media, etc. are known. For example, magneto-optical recording media formed of rare earth-transition metal alloy thin films include polycrystalline thin films such as MnBi and MnCuBi, GdCo, GdFe, TbFe, DyFe,
Amorphous thin films such as GdTbFe and TbDyFe, T
Single crystal thin films such as bFeO3 are known.
【0003】これらの薄膜のうち、大面積の薄膜を室温
近傍の温度で製作する際の成膜性、信号を小さな光熱エ
ネルギーで書き込むための書き込み効率、および書き込
まれた信号をS/N比よく読み出すための読み出し効率
等を勘案すると、最近では前記非晶質薄膜が光熱記録媒
体として優れていると考えられている。GdTbFe
はカー回転角も大きく、150℃前後のキューリー点を
持つので光熱磁気記録媒体として適している。更に発明
者等はカー回転角を向上させる目的で研究した結果、G
dTbFeCoがカー回転角が充分に大きく、S/N比
の良い読み出しが可能な光磁気記録媒体であることを見
い出した。[0003] Among these thin films, the film forming performance when manufacturing a large-area thin film at a temperature near room temperature, the writing efficiency for writing signals with small photothermal energy, and the good S/N ratio of written signals are important. Considering readout efficiency and the like, the amorphous thin film is recently considered to be excellent as a photothermal recording medium. GdTbFe
has a large Kerr rotation angle and a Curie point of around 150°C, making it suitable as a photothermal magnetic recording medium. Furthermore, as a result of research aimed at improving the Kerr rotation angle, the inventors found that G
It has been found that dTbFeCo is a magneto-optical recording medium that has a sufficiently large Kerr rotation angle and can be read with a good S/N ratio.
【0004】0004
【発明が解決しようとする課題】しかしながら、一般に
前記 GdTbFe 等の光磁気記録媒体をはじめとす
る磁気記録媒体に用いられる非晶質磁性体は、耐食性が
悪いという欠点を持っている。すなわち、大気、水蒸気
に触れると磁気特性が低下し、最終的には完全に酸化さ
れて透明化するに至る。[Problems to be Solved by the Invention] However, amorphous magnetic materials used in magnetic recording media, including magneto-optical recording media such as GdTbFe, generally have a drawback of poor corrosion resistance. That is, when it comes into contact with air or water vapor, its magnetic properties deteriorate, and eventually it becomes completely oxidized and becomes transparent.
【0005】このような欠点を除くために、従来から、
記録媒体となる磁気記録層の両側に記録光、再生光をほ
ぼ透過する例えば、SiO2, SiO,Si3N4,
AlN の保護層を設けたり、更には、不活性ガスに
より磁気記録層を封じ込めたディスク状記録媒体が提案
されている。[0005] In order to eliminate such drawbacks, conventionally,
For example, SiO2, SiO, Si3N4,
Disk-shaped recording media have been proposed in which a protective layer of AlN is provided or a magnetic recording layer is further sealed with an inert gas.
【0006】このような従来の磁気記録媒体の一例とし
て、例えば図2に示すように書き込み側基板1a上に保
護層2を形成し、磁気記録層3、スペーサー層4、およ
び反射層5を順次設け、更に接着層6を介して外部プラ
スチック基板1bと貼り合わせたものが知られている。
しかし、プラスチック基板の吸水性が大きいために磁気
記録層3が数百オングストロームと薄い場合には、保護
層2、スペーサー層4が存在するにもかかわらず湿度の
高い状態に長時間置かれると磁気特性が劣化するという
欠点が生じやすかった。また、保護層としての窒化物の
膜は、プラスチックなどの基板に対して密着力が弱く、
はく離やクラックが生じやすいという欠点があった。さ
らに窒化物として Si3N4, AlN, BN な
どの熱伝導のよい材料を用い記録媒体の耐久性を向上さ
せるために、その膜厚を厚くすると光ビームによる記録
層の温度上昇が十分でなく記録感度が低下するという欠
点もあった。As an example of such a conventional magnetic recording medium, for example, as shown in FIG. 2, a protective layer 2 is formed on a writing side substrate 1a, and a magnetic recording layer 3, a spacer layer 4, and a reflective layer 5 are sequentially formed. It is known that the substrate is further bonded to an external plastic substrate 1b via an adhesive layer 6. However, if the magnetic recording layer 3 is as thin as several hundred angstroms due to the high water absorption of the plastic substrate, the magnetic recording layer 3 will become magnetic if left in a humid state for a long time despite the presence of the protective layer 2 and spacer layer 4. The disadvantage was that the characteristics deteriorated easily. In addition, the nitride film used as a protective layer has weak adhesion to substrates such as plastic.
It has the disadvantage of being prone to peeling and cracking. Furthermore, if a material with good thermal conductivity such as Si3N4, AlN, or BN is used as a nitride and the film thickness is increased to improve the durability of the recording medium, the temperature of the recording layer due to the light beam may not rise sufficiently, resulting in a decrease in recording sensitivity. There was also the drawback that it decreased.
【0007】本発明は、以上の問題点に鑑みなされたも
のであり、磁気記録層の磁気特性を損なうことなく、水
分や酸素等に対する耐食性に優れまた耐久性に優れた磁
気記録媒体を提供し、かつその記録感度を向上させるこ
とを目的とするものである。The present invention has been made in view of the above problems, and provides a magnetic recording medium that has excellent corrosion resistance against moisture, oxygen, etc., and excellent durability without impairing the magnetic properties of the magnetic recording layer. , and to improve its recording sensitivity.
【0008】[0008]
【課題を解決するための手段】本発明の上記目的は、プ
ラスチック基板上に、光学的記録層が設けられて成る光
学的記録媒体において、基板と記録層との間に、基板に
相接して酸化ケイ素から成る下引き層を設け、更に下引
き層と記録層との間に炭化物と窒化物との混合物から成
る保護層を設けることによって達成される。[Means for Solving the Problems] The above-mentioned object of the present invention is to provide an optical recording medium comprising an optical recording layer provided on a plastic substrate. This is achieved by providing an undercoat layer made of silicon oxide and further providing a protective layer made of a mixture of carbide and nitride between the undercoat layer and the recording layer.
【0009】上記炭化物としては、例えばTi−C系,
Zr−C系,Hf−C系,V−C 系,Ta−C系,M
o−C系,W−C 系,Si−C系,B−C 系,Cr
−C系,Al−C系,Ba−C系,Be−C系,Ce−
C系が用いられる。また、窒化物としては、例えばSn
−N系,In−N系,Zr−N系,Cr−N系,Al−
N系,Si−N系,Ta−N系,V−N 系,Nb−N
系,Mo−N系,W−N 系が用いられる。[0009] Examples of the above-mentioned carbide include Ti-C type,
Zr-C system, Hf-C system, V-C system, Ta-C system, M
o-C system, W-C system, Si-C system, B-C system, Cr
-C system, Al-C system, Ba-C system, Be-C system, Ce-
C system is used. Further, as the nitride, for example, Sn
-N system, In-N system, Zr-N system, Cr-N system, Al-
N system, Si-N system, Ta-N system, V-N system, Nb-N
type, Mo-N type, and W-N type.
【0010】0010
【実施例】まず、本発明を光磁気記録媒体に適用した場
合につき、該記録媒体の各層の構成例を、その断面を示
す略図を参照しながら説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS First, when the present invention is applied to a magneto-optical recording medium, an example of the structure of each layer of the recording medium will be described with reference to a schematic diagram showing a cross section thereof.
【0011】図1の構成の記録媒体において、書き込み
側基板1a、下引き層2及び磁気記録層3は図2で示し
た従来の磁気記録媒体に使用したと同じものによって形
成することができる。例えば基板1aとして、アクリル
樹脂、ポリカーボネート等のプラスチック板またはガラ
ス板、下引き層2として、SiO または SiO2
からなる薄膜、磁気記録層3として各種の非晶質薄膜を
使用できる。この非晶質磁性薄膜として、GdCo,
GdFe, TbFe, DyFe, GdTbFe,
TbDyFe等の非晶質磁性薄膜が好ましい。なかで
も、 GdTbFe, GdTbFeCo はカー回転
角が大きいので特に好ましい。In the recording medium having the structure shown in FIG. 1, the write-side substrate 1a, the undercoat layer 2, and the magnetic recording layer 3 can be formed of the same material as used in the conventional magnetic recording medium shown in FIG. For example, the substrate 1a may be a plastic plate such as acrylic resin or polycarbonate, or a glass plate, and the undercoat layer 2 may be SiO or SiO2.
Various amorphous thin films can be used as the magnetic recording layer 3. As this amorphous magnetic thin film, GdCo,
GdFe, TbFe, DyFe, GdTbFe,
An amorphous magnetic thin film such as TbDyFe is preferred. Among these, GdTbFe and GdTbFeCo are particularly preferable because they have a large Kerr rotation angle.
【0012】下引き層2の層厚は一般に500〜300
0オングストロームで、磁気記録層3の層厚,炭化物と
窒化物との混合物から成る膜7の層厚に応じて異なるが
、耐久性,記録感度の面から1000オングストローム
程度が好ましい。下引き層として設けるSiO または
SiO2 は、その上に設ける膜の基板との融合性向
上の目的で設けるものである。[0012] The layer thickness of the undercoat layer 2 is generally 500 to 300
Although it varies depending on the layer thickness of the magnetic recording layer 3 and the layer thickness of the film 7 made of a mixture of carbide and nitride, it is preferably about 1000 angstrom from the viewpoint of durability and recording sensitivity. SiO 2 or SiO 2 provided as an undercoat layer is provided for the purpose of improving the compatibility of the film provided thereon with the substrate.
【0013】磁気記録層3の層厚は記録層としての機能
を果す範囲内の所望の層厚に形成するが通常160〜1
000オングストローム程度である。しかし、記録再生
の性能向上の面から160オングストローム程度が好ま
しい。The thickness of the magnetic recording layer 3 is formed to a desired thickness within a range that functions as a recording layer, but is usually 160 to 1.
000 angstroms. However, from the viewpoint of improving recording and reproducing performance, the thickness is preferably about 160 angstroms.
【0014】炭化物と窒化物との混合物から成る膜7,
8は記録層3の両側または片側に形成する。片側の場合
は下引き層2と磁気記録層3との間に形成する。炭化物
と窒化物との混合物から成る膜は膜自体に酸素を含まな
いので下引き層2からの酸素や基板を通しての水分によ
り、磁気記録層3が腐食されるのを防ぐ機能を果す。炭
化物と窒化物との混合物から成る膜の膜厚は100〜2
000オングストロームの範囲が好ましい。100オン
グストロームより薄いと耐湿効果が不充分であり、一方
2000オングストロームより厚いと磁気記録媒体の記
録感度が低下し好ましくない。a membrane 7 consisting of a mixture of carbides and nitrides;
8 is formed on both sides or one side of the recording layer 3. In the case of one side, it is formed between the undercoat layer 2 and the magnetic recording layer 3. Since the film made of a mixture of carbide and nitride does not contain oxygen, it functions to prevent the magnetic recording layer 3 from being corroded by oxygen from the undercoat layer 2 or moisture passing through the substrate. The thickness of the film made of a mixture of carbide and nitride is 100~2
A range of 0.000 angstroms is preferred. If it is thinner than 100 angstroms, the moisture resistance effect will be insufficient, while if it is thicker than 2000 angstroms, the recording sensitivity of the magnetic recording medium will decrease, which is undesirable.
【0015】SiO, SiO2 などのスペーサー層
4, Cu,Al, Au などの反射層5,シリコン
系接着剤などの接着層6およびガラス,プラスチックま
たはアルミニウムなどの金属よりなる保護基板1bのそ
れぞれが果す機能は従来の記録媒体の場合と同様である
。The spacer layer 4 made of SiO, SiO2, etc., the reflective layer 5 made of Cu, Al, Au, etc., the adhesive layer 6 made of silicon adhesive, and the protective substrate 1b made of glass, plastic, or metal such as aluminum each play a role. The functionality is similar to that of conventional recording media.
【0016】図1の例では、炭化物と窒化物との混合物
から成る膜は記録層に相接して設けてあり、耐食性はこ
の場合がより効果的ではあるが相接して設けることは本
発明において必須ではなく、炭化物と窒化物との混合物
から成る膜と記録層との間に他の補助層が介在していて
も発明の目的は達成出来る。また、図3に他の例を示す
ようにスペーサー層4,反射層5などの補助層を欠いて
いる構成の記録媒体もまた本発明に属するものである。In the example shown in FIG. 1, the film made of a mixture of carbide and nitride is provided adjacent to the recording layer, and although this case is more effective in terms of corrosion resistance, it is not true that the film is provided adjacent to the recording layer. Although not essential to the invention, the object of the invention can be achieved even if another auxiliary layer is interposed between the recording layer and the film made of a mixture of carbide and nitride. Further, as shown in another example in FIG. 3, a recording medium having a structure lacking auxiliary layers such as a spacer layer 4 and a reflective layer 5 also belongs to the present invention.
【0017】本発明の記録媒体の作製方法は、図1の例
について述べれば、書き込み側基板1a上に下引き層2
を蒸着法などにより形成し、次いで炭化物と窒化物との
混合物から成る膜7,記録層3、再び炭化物と窒化物と
の混合物から成る膜8を順次スパッタリングなどにより
形成する。更にその上にスペーサー層4,反射層5を蒸
着法などにより積層したのち、保護基板1bを接着層6
を介して貼り合わせることにより図1の構成の記録媒体
が完成する。尚、図1には示していないが、耐久性向上
の目的で反射層5の上に更に窒化物膜などの保護層をス
パッタリングなどにより介在させることも出来る。Referring to the example of FIG. 1, the method for manufacturing a recording medium of the present invention includes forming an undercoat layer 2 on a writing side substrate 1a.
A film 7 made of a mixture of carbide and nitride, a recording layer 3, and a film 8 again made of a mixture of carbide and nitride are sequentially formed by sputtering or the like. Further, a spacer layer 4 and a reflective layer 5 are laminated thereon by a vapor deposition method, and then the protective substrate 1b is laminated with an adhesive layer 6.
A recording medium having the configuration shown in FIG. 1 is completed by pasting the two layers together via the . Although not shown in FIG. 1, a protective layer such as a nitride film may be further interposed on the reflective layer 5 by sputtering or the like for the purpose of improving durability.
【0018】以下に本発明を光磁気記録媒体に適用した
場合につき実施例を示して更に具体的に説明する。[0018] The present invention will be described in more detail below with reference to examples in which the present invention is applied to a magneto-optical recording medium.
【0019】実施例1
ポリアクリレート樹脂基板1aの上に下引き層2として
約1000オングストロームの SiO2 膜を蒸着に
より形成し、反応性スパッタリングにより約700オン
グストロームの Si3N4と SiCとの混合膜7、
スパッタリングにより約1000オングストロームの
GdTbFeCo 4元系非晶質薄膜3、再び反応性ス
パッタリングにより約2000オングストロームの S
i3N4と SiCとの混合膜8を次々にその上に成膜
した。更にシリコン接着剤からなる接着層6を介してポ
リアクリレート樹脂基板1bを貼り合わせることにより
図3に示す構成の光磁気記録媒体を得た。窒化物と炭化
物の混合膜7,8は Si ターゲットを用い、 Ar
とCH4 と N2 のガス導入比を90:5:5と
した混合ガス中での反応性スパッタリングにより得た。Example 1 A SiO2 film of about 1000 angstroms is formed by vapor deposition as an undercoat layer 2 on a polyacrylate resin substrate 1a, and a mixed film 7 of Si3N4 and SiC of about 700 angstroms is formed by reactive sputtering.
Approximately 1000 angstroms by sputtering
GdTbFeCo quaternary amorphous thin film 3 was sputtered again to about 2000 angstroms of S.
Mixed films 8 of i3N4 and SiC were successively formed thereon. Further, a polyacrylate resin substrate 1b was attached via an adhesive layer 6 made of silicone adhesive to obtain a magneto-optical recording medium having the configuration shown in FIG. 3. The mixed films 7 and 8 of nitride and carbide are formed using a Si target and Ar
It was obtained by reactive sputtering in a mixed gas of CH4 and N2 at a gas introduction ratio of 90:5:5.
【0020】得られた記録媒体に関し、そのカー回転角
θk ,保磁力Hc の測定とともに45℃、相対湿度
95%の恒温恒湿槽にて1000時間の耐湿テストを行
なった。Regarding the obtained recording medium, its Kerr rotation angle θk and coercive force Hc were measured, and a humidity resistance test was conducted for 1000 hours in a constant temperature and humidity chamber at 45° C. and relative humidity of 95%.
【0021】比較のため、炭化物と窒化物との混合物か
ら成る膜7,8を設けない他は上記と同様の構成を有す
る記録媒体についても試験を行なった。結果は表1に示
すとおりで、本発明の光磁気記録媒体は磁性特性の劣化
も認められず、耐久性が向上した。また磁気特性,記録
感度,読み出し効率の劣化も認められなかった。尚、表
1の耐湿テスト後の数値は、初期値を1.0 とした場
合の比率で示してある。For comparison, a test was also conducted on a recording medium having the same structure as above, except that the films 7 and 8 made of a mixture of carbide and nitride were not provided. The results are shown in Table 1, and the magneto-optical recording medium of the present invention showed no deterioration in magnetic properties and improved durability. Furthermore, no deterioration in magnetic properties, recording sensitivity, or read efficiency was observed. Note that the values after the moisture resistance test in Table 1 are shown as ratios when the initial value is 1.0.
【0022】実施例2
実施例1の SiCと Si3N4との混合膜の代りに
SiCと AlNとの混合膜を保護層として設けた外
は実施例1と同様の膜構成の光磁気記録媒体を作成した
。SiC とAlN の混合膜は5インチφの SiC
化合物ターゲットの上にほぼ10mm角の Al 片を
4つ均一に並べて Ar と N2 の比を1:1とし
た混合ガス中でスパッタリングにより成膜した。Example 2 A magneto-optical recording medium with the same film structure as in Example 1 was created except that a mixed film of SiC and AlN was provided as a protective layer instead of the mixed film of SiC and Si3N4 in Example 1. did. The mixed film of SiC and AlN is 5 inch φ SiC
Four Al pieces approximately 10 mm square were uniformly arranged on a compound target, and a film was formed by sputtering in a mixed gas of Ar and N2 at a ratio of 1:1.
【0023】この記録媒体についても実施例1と同様の
テストを行なったが実施例1と同様耐久性は向上した。
この実施例2の耐久結果を表1に示す。[0023] This recording medium was also subjected to the same test as in Example 1, and the durability was improved as in Example 1. The durability results of Example 2 are shown in Table 1.
【0024】[0024]
【表1】
表1 ┌────┬─────┬
───────────┐ │
│初期特性 │ 耐湿テスト1000H後
│ │ ├──┬─
─┼─────┬─────┤ │
│Hc │θk │ Hc │
θk │ ├────┼─
─┼──┼─────┼─────┤
│実施例1│1.0 │1.0 │ 0.9
│ 0.9〜1.0 │ │実施例2
│1.0 │1.0 │ 0.9 │ 0.
9〜1.0 │ │比較例 │1.0
│1.0 │ 0.2〜0.3 │ 0.2〜0.3
│ └────┴──┴──┴───
──┴─────┘[Table 1]
Table 1 ┌────┬──────┬
────────────┐ │
│Initial characteristics │ After 1000 hours of humidity test │ │ ├──┬─
─┼─────┬──────┤ │
│Hc │θk │Hc │
θk │ ├────┼─
─┼──┼──────┼──────┤
│Example 1│1.0 │1.0 │0.9
│ 0.9-1.0 │ │Example 2
│1.0 │1.0 │ 0.9 │ 0.
9-1.0 │ │Comparative example │1.0
│1.0 │ 0.2-0.3 │ 0.2-0.3
│ └────┴──┴──┴────
──┴─────┘
【0025】[0025]
【発明の効果】本発明の光学的記録媒体によれば、記録
層が例えば約数百オングストロームの厚さの磁性層であ
ってもその書き込み側基板側またはその両側に膜自体に
酸素を含まない耐湿性のすぐれた炭化物と窒化物との混
合物より成る膜を設けることにより記録媒体の耐食性を
顕著に改善出来る。その効果は、上記炭化物と窒化物と
の混合物より成る膜を記録層に相接して設けた場合特に
すぐれている。またSiO または SiO2 の膜を
下引き層として書き込み側基板上に設けることによりそ
の上に設ける膜の基板との融合性を向上することが出来
る。According to the optical recording medium of the present invention, even if the recording layer is a magnetic layer with a thickness of about several hundred angstroms, the film itself does not contain oxygen on the writing side substrate side or both sides thereof. By providing a film made of a mixture of carbide and nitride with excellent moisture resistance, the corrosion resistance of the recording medium can be significantly improved. The effect is particularly excellent when a film made of the mixture of carbide and nitride is provided in contact with the recording layer. Furthermore, by providing a film of SiO or SiO2 as an undercoat layer on the write-side substrate, it is possible to improve the compatibility of the film provided thereon with the substrate.
【0026】尚、本発明は光磁気記録媒体に限定される
ものでなく、たとえばカルコゲン化合物の薄膜等、酸化
され易い記録層を有する他の光学的記録媒体の耐食性向
上に関しても同様に効果的である。The present invention is not limited to magneto-optical recording media, but is equally effective in improving the corrosion resistance of other optical recording media having recording layers that are easily oxidized, such as thin films of chalcogen compounds. be.
【図1】本発明の記録媒体の各層の構成例の断面略図で
ある。FIG. 1 is a schematic cross-sectional view of an example of the structure of each layer of a recording medium of the present invention.
【図2】従来の記録媒体の各層の構成例の断面略図であ
る。FIG. 2 is a schematic cross-sectional view of an example of the structure of each layer of a conventional recording medium.
【図3】本発明の記録媒体の各層の構成例の断面略図で
ある。FIG. 3 is a schematic cross-sectional view of an example of the structure of each layer of the recording medium of the present invention.
1a 書き込み側基板 1b 保護用基板 2 下引き層 3 記録層 4 スペーサー層 5 反射層 6 接着層 1a Write side board 1b Protective board 2 Undercoat layer 3 Recording layer 4 Spacer layer 5 Reflective layer 6 Adhesive layer
Claims (1)
が設けられて成る光学的記録媒体において、前記基板と
記録層との間に、基板に相接して酸化ケイ素から成る下
引き層を設け、更に該下引き層と記録層との間に炭化物
と窒化物との混合物から成る保護層を設けたことを特徴
とする光学的記録媒体。1. An optical recording medium comprising an optical recording layer provided on a plastic substrate, wherein an undercoat layer made of silicon oxide is provided in contact with the substrate between the substrate and the recording layer. An optical recording medium further comprising a protective layer made of a mixture of carbide and nitride between the undercoat layer and the recording layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3086023A JPH04219650A (en) | 1991-03-27 | 1991-03-27 | Optical recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3086023A JPH04219650A (en) | 1991-03-27 | 1991-03-27 | Optical recording medium |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21144284A Division JPS6192459A (en) | 1984-10-11 | 1984-10-11 | Optical recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04219650A true JPH04219650A (en) | 1992-08-10 |
Family
ID=13875065
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3086023A Pending JPH04219650A (en) | 1991-03-27 | 1991-03-27 | Optical recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04219650A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6153063A (en) * | 1996-03-11 | 2000-11-28 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information |
US6268034B1 (en) | 1998-08-05 | 2001-07-31 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium and method for producing the same, method for recording and reproducing information thereon and recording/reproducing apparatus |
US6343062B1 (en) | 1997-09-26 | 2002-01-29 | Matsushita Electric Industrial Co., Ltd | Optical disk device and optical disk for recording and reproducing high-density signals |
US6388984B2 (en) | 1997-08-28 | 2002-05-14 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium and its recording and reproducing method |
US6821707B2 (en) | 1996-03-11 | 2004-11-23 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information |
-
1991
- 1991-03-27 JP JP3086023A patent/JPH04219650A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6153063A (en) * | 1996-03-11 | 2000-11-28 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information |
US6821707B2 (en) | 1996-03-11 | 2004-11-23 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information |
US7037413B1 (en) | 1996-03-11 | 2006-05-02 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information |
US6388984B2 (en) | 1997-08-28 | 2002-05-14 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium and its recording and reproducing method |
US6343062B1 (en) | 1997-09-26 | 2002-01-29 | Matsushita Electric Industrial Co., Ltd | Optical disk device and optical disk for recording and reproducing high-density signals |
US6268034B1 (en) | 1998-08-05 | 2001-07-31 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium and method for producing the same, method for recording and reproducing information thereon and recording/reproducing apparatus |
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