JPS6381643A - Magneto-optical medium - Google Patents
Magneto-optical mediumInfo
- Publication number
- JPS6381643A JPS6381643A JP22742486A JP22742486A JPS6381643A JP S6381643 A JPS6381643 A JP S6381643A JP 22742486 A JP22742486 A JP 22742486A JP 22742486 A JP22742486 A JP 22742486A JP S6381643 A JPS6381643 A JP S6381643A
- Authority
- JP
- Japan
- Prior art keywords
- magneto
- substrate
- optical medium
- silicon
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 150000004767 nitrides Chemical class 0.000 claims abstract description 28
- 230000001681 protective effect Effects 0.000 claims abstract description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000002131 composite material Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 7
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 7
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 7
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 5
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 5
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 4
- 229910052804 chromium Inorganic materials 0.000 claims abstract 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 abstract description 29
- 239000011241 protective layer Substances 0.000 abstract description 14
- 230000006866 deterioration Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 6
- 239000000203 mixture Substances 0.000 abstract description 6
- 229920003002 synthetic resin Polymers 0.000 abstract description 5
- 239000000057 synthetic resin Substances 0.000 abstract description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 3
- 239000004417 polycarbonate Substances 0.000 abstract description 3
- 229920000515 polycarbonate Polymers 0.000 abstract description 3
- 238000005336 cracking Methods 0.000 abstract description 2
- 150000002739 metals Chemical class 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 239000010408 film Substances 0.000 description 33
- 239000011521 glass Substances 0.000 description 9
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229920005668 polycarbonate resin Polymers 0.000 description 3
- 239000004431 polycarbonate resin Substances 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 150000002910 rare earth metals Chemical class 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- -1 TbFe%TbFe0o Chemical class 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 241000283986 Lepus Species 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 229910004217 TaSi2 Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 244000022782 cocaer Species 0.000 description 1
- 235000008957 cocaer Nutrition 0.000 description 1
- ZPUCINDJVBIVPJ-LJISPDSOSA-N cocaine Chemical compound O([C@H]1C[C@@H]2CC[C@@H](N2C)[C@H]1C(=O)OC)C(=O)C1=CC=CC=C1 ZPUCINDJVBIVPJ-LJISPDSOSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 229910021354 zirconium(IV) silicide Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】 （Ｍ業上の利用分野） 本発明は、光磁気記録等に好適な光磁気媒体に関する。[Detailed description of the invention] (Field of use in M industry) The present invention relates to a magneto-optical medium suitable for magneto-optical recording and the like.
（従来の技術）
光メモリー素子の中でも追加記録、消去が可能々、ｅｒ
ａ８ａｂ１θ型メモリーは、光メモリ一方式が最も実用
化に近い段階にいる。光磁気記録媒体としては総合的々
特性から見て、希土類、遷移金属薄膜が最も優れている
が、致命的欠陥として耐食性に欠けるという欠漬が挙げ
られる。(Conventional technology) Even in optical memory devices, additional recording and erasing are possible.
The a8ab1θ type memory is at the stage closest to practical use as a one-type optical memory. As a magneto-optical recording medium, thin films of rare earth metals and transition metals are the best in terms of overall characteristics, but a fatal defect is a lack of corrosion resistance.
すなわち、腐食に伴ない高密度記録の必要条件である保
磁力の低下や高ＢｌＮ比の必要条件であるカー回転角の
減少、誤り率の増加など多くの欠陥を露呈する事となる
。That is, many defects are exposed due to corrosion, such as a decrease in coercive force, which is a necessary condition for high-density recording, a decrease in Kerr rotation angle, which is a necessary condition for a high BlN ratio, and an increase in error rate.
従来、その対策としては２つの方法がとられてきた。即
ち、
（１） 添加物を用いて耐食性を向上する。Conventionally, two methods have been taken as countermeasures. That is, (1) Corrosion resistance is improved using additives.
（１１］ 保護膜を形成し耐食性を向上する。(11) Form a protective film to improve corrosion resistance.
本発明は上記コカ法のうち保護膜を用いる方法に注目し
なされたものである。The present invention focuses on the method using a protective film among the above-mentioned Coca methods.
保護膜としてまず、５１０２等の高融点酸化物が提案さ
れているが、これらはＴｂ、Ｆｅ＠との反応性、すなわ
ち、磁性層との界面における反応性が高いので、磁性層
を劣化させる念め好ましくない。First, high-melting-point oxides such as 5102 have been proposed as protective films, but these have high reactivity with Tb and Fe@, that is, high reactivity at the interface with the magnetic layer, so care must be taken to avoid deteriorating the magnetic layer. I don't like it.
さらに１上記酸化物系以外の保護膜として、ＡＩＪＪ、
Ｓｉ３Ｎ４をはじめとする窒化物膜は酸素を含有しな
い材買であり、従って磁性層を酸化させることが少ない
ので、良好な保ｒＪＩ特性をもつことが明らかにされて
きた。しかしながら、Ａ１．Ｎ等は熱伝導性が極めて高
く、記録媒体へのレー・ブー照射時に熱の逃げの大きい
と云う問題点かあり、窒化物は一般に基板との接着性が
悪く、そのために高温高湿下での剥離が問題であった。Furthermore, as a protective film other than the above-mentioned oxide type, AIJJ,
It has been revealed that nitride films such as Si3N4 are materials that do not contain oxygen and therefore have good RJI characteristics because they are less likely to oxidize the magnetic layer. However, A1. N etc. have extremely high thermal conductivity, and there is a problem in that a large amount of heat escapes when irradiating the recording medium with Ray Bou. Nitride generally has poor adhesion to the substrate, so it cannot be used under high temperature and high humidity conditions. Peeling was a problem.
更に、光磁気媒体は、合成樹脂やガラス等を基板として
用い、これに磁性層を設けた構造とされているが、特に
基板をポリカーボネート樹脂やアクリル樹脂等の合成樹
脂とした場合、基板と磁性層との親和性不良によるクラ
ンクの発生や剥離の発生や、基板に含有されていたシ、
透過してくる微量の空気や水分等による磁性層の劣化が
問題となるので、保獲層は磁性層や基板と親和性があシ
、水分や空気を透過せず、自身も水分や空気等によシ劣
化することがないものであることが要求される。Furthermore, magneto-optical media have a structure in which a synthetic resin, glass, etc. is used as a substrate and a magnetic layer is provided on this. However, especially when the substrate is made of synthetic resin such as polycarbonate resin or acrylic resin, the magnetic layer and the substrate are Occurrence of cranks and peeling due to poor affinity with the layer, and
Deterioration of the magnetic layer due to small amounts of air or moisture passing through is a problem, so the capture layer has no affinity with the magnetic layer or substrate, does not allow moisture or air to pass through, and is itself free of moisture, air, etc. It is required that the material does not deteriorate due to damage.
更に、保護膜を磁性層の光入射側（書込み、読出し光）
に設けた場合には入射光が磁性層に充分に達するだけの
透明性が必要とされる。Furthermore, a protective film is placed on the light incident side (writing and reading light) of the magnetic layer.
When the magnetic layer is provided in the magnetic layer, transparency is required to allow sufficient incident light to reach the magnetic layer.
窒化物のうち透明で耐食性の十分あるものは、Ｓｉ３Ｎ
４、ＡＩＮ、 Ｇｅ３Ｎ４９ど極めて限られたものであ
り、Ｃ！ｒＮ、 ＺｒＮ、 Ｔｉｅ％ＮｂＮ％ＴａＮな
どは耐食性にも優れ、熱的特性も優れているにもかかわ
らず、不透明であるため、光入射側の保護膜には用いる
ことができなかつ念。Among nitrides, one that is transparent and has sufficient corrosion resistance is Si3N.
4. AIN, Ge3N49, etc. are extremely limited, and C! Although rN, ZrN, Tie%NbN%TaN, etc. have excellent corrosion resistance and excellent thermal properties, they are opaque and cannot be used as a protective film on the light incident side.
本発明者らは、 ＳｉＮ等の非界面反応性を保ちつつ上
述の欠陥を改善する目的で、保護膜の検討を行ない、Ｓ
ｉＮを含む複合窒化物が上記の要求な溝すことを見出し
、本発明に到達した。In order to improve the above-mentioned defects while maintaining the non-interfacial reactivity of SiN etc., the present inventors investigated a protective film, and
The inventors have discovered that a composite nitride containing iN fulfills the above-mentioned requirements, and have arrived at the present invention.
すなわち、本発明の要旨は、基板上に光磁気活性層を設
けてなる光磁気媒体において、Ｔｉ、Ｚｒ、 Ｈｆ、
”Ｖ、Ｎｂ、 Ｔａ％Ｏｒ、 Ｍｏ又はＷから選ばれる
少なくとも１種の金属とケイ５Ｐｉおよび窒素からなる
複合窒化物を保護膜として形成させてなる光磁気媒体に
ある。That is, the gist of the present invention is to provide a magneto-optical medium in which a magneto-optical active layer is provided on a substrate, in which Ti, Zr, Hf,
``This magneto-optical medium is formed by forming a composite nitride consisting of at least one metal selected from V, Nb, Ta%Or, Mo, or W, Si5Pi, and nitrogen as a protective film.
（発明の構成） 以下、本発明の詳細な説明する。(Structure of the invention) The present invention will be explained in detail below.
壕ず、本発明において用いられる基板としては、ガラス
、アクリル樹脂、ポリカーボネート樹脂等のプラスチッ
ク、又はアルミニウム等の金属が挙げられるが、本発明
は特にポリカーボネート、アクリル樹脂等の合成樹脂を
基板とした場合にその効果が順著に発揮される。The substrate used in the present invention may be glass, plastic such as acrylic resin, polycarbonate resin, or metal such as aluminum, but the present invention is particularly applicable to substrates made of synthetic resin such as polycarbonate or acrylic resin. Its effects are gradually manifested.
基板の厚みは／〜−−程度が一般的である。The thickness of the substrate is generally on the order of /--.
この基板上に設けられる光磁気活性層としては、たとえ
ば、ＴｂＦｅ ％ＴｂＦｅ０ｏ、Ｔｔ）Ｃｏ などの
希土類と遷移金属の非晶質磁性合金、及びＭｎＢ１ 、
Ｍｎ０ｕＢｉなどの多結晶垂直磁化膜が用いられる。The magneto-optical active layer provided on this substrate is, for example, an amorphous magnetic alloy of rare earth and transition metals such as TbFe%TbFe0o, Tt)Co, and MnB1,
A polycrystalline perpendicular magnetization film such as Mn0uBi is used.
特に希土系の合金磁性膜に用いて大変効果的である。It is particularly effective when used for rare earth alloy magnetic films.
本発明においては、上記基板と光磁気活性層の間；光磁
気活性層の上あるいは該層を挾む形でＴｉ、Ｚｒ％Ｈｆ
％Ｖ、 Ｎｂ、 Ｔａ％Ｏｒ、 Ｍｏ、Ｗの金属とケイ
素および窒素からなる複合窒化物を保護膜として形成さ
せる。In the present invention, between the substrate and the magneto-optical active layer; on top of the magneto-optical active layer or sandwiching the layer, Ti, Zr%Hf
A composite nitride consisting of metals such as %V, Nb, Ta%Or, Mo, and W, silicon, and nitrogen is formed as a protective film.
複合窒化物としては、ケイ素の窒化物ＥｌｉＮと７１Ｍ
ＺｒＮ ＨｆＮ ＶＮ ＮｂＮ
ＴａＮ ＯｒＮ ＭｏＮＷＨの窒化物の混合
物及び固溶体が挙げられる。As composite nitrides, silicon nitride EliN and 71M are used.
ZrN HfN VN NbN
Mention may be made of mixtures and solid solutions of nitrides of TaN OrN MoNWH.
これらのうち好ましい窒化物はＴｉＮ％ＺｒＮ％ＭｂＮ
。Among these, preferable nitrides are TiN%ZrN%MbN
.
？’ａＭである。? 'aM.
ＳｉＮ以外の上記窒化物の使用割合は、窒化物の種類に
よって異なるが、複合窒化物中、一般的には１モルチ〜
！０モルチが選ばれるが、ＴｉＮ、 ＺｒＮ、 ＨｆＮ
は１モル％ 〜ｇ ０モル％が好ましい含有率であフ
、ＶＮ、ＮｂＮ、 ＴａＮは１モルチル３Ｏ−Ｉ−ｈチ
が好ましい組成範囲である。The proportion of the above-mentioned nitrides other than SiN varies depending on the type of nitride, but it is generally 1 to 1 mol t in the composite nitride.
! 0 molti is selected, but TiN, ZrN, HfN
The preferred content range is 1 mol % to 0 mol %, and the preferred composition range for VN, NbN, and TaN is 1 mol 3O-Ih.
上記組成の選定条件としては、複合窒化物薄膜の光透過
率（光波要約ｒ ００ ｎｍ、膜厚１００θＸでガラス
基板上）が、７０チ以上になシ、且つ後述するクラック
の発生が実質的にないように選定することが好ましい。The conditions for selecting the above composition are that the light transmittance of the composite nitride thin film (on a glass substrate with a light wave length r 00 nm and a film thickness of 100θX) must be 70 cm or more, and the occurrence of cracks as described below must be substantially reduced. It is preferable to select such that there is no such thing.
上記８１Ｎ以外の窒化物は２種以上を併用することがで
きる。Two or more types of nitrides other than the above 81N can be used in combination.
複合窒化物の保護膜の作成は、以下に述べるような通常
の物理蒸着法（Ｐ”ｌｉ’Ｄ ）及びプラズマＯＶＤの
ような化学蒸着、アルコキシドなど液相な用いた塗布例
えばスピンコードが考えられる。The composite nitride protective film can be created by the usual physical vapor deposition method (P"li'D) as described below, chemical vapor deposition such as plasma OVD, or coating using a liquid phase coating such as alkoxide, such as spin code. .
／）上述の組成をもった窒化物焼結ターゲットを用いて
電子ビーム蒸着またはスパッタリングによシ基板上に保
護膜を堆積する。コ） Ｓｉ３Ｎ４のターゲットと他の
窒化物の同時蒸着、またはＳｉ３Ｎ４のターゲット上に
他の窒化物を配置してなる複合ターゲット方式によるス
パッタリング、３）反応性イオンブレーティングｓ Ｒ
応性−ｘバッタリングによる金属ターゲットを用いる方
法が考えられる。この保ｒｔ＆膜の膜厚は１０Ｘ〜！θ
０θ＾程度、好ましくは！０＾〜２ｏｏｏＸ程夏から選
ばれる。/) Depositing a protective film on the substrate by electron beam evaporation or sputtering using a nitride sintered target having the composition described above. e) Co-evaporation of a Si3N4 target and other nitrides, or sputtering using a composite target method in which other nitrides are placed on a Si3N4 target, 3) Reactive ion blasting sR
A method using a metal target using reactive-x battering is considered. The film thickness of this rt&membrane is 10X~! θ
About 0θ^, preferably! 0^~2oooX will be selected from summer.
膜の堆積速度は早すぎると基板との親和性を低下させ、
遅すぎれば生産性に影響するので通常０．／ Ａ ／
ｓｅａ 〜／ ０θＡ ／ ８ ｅ Ｏｓ好ましくは／
Ａ／ ｓｅａ 〜／ ０人／ｓｅａとされる。If the film deposition rate is too fast, the affinity with the substrate will decrease,
If it is too slow, it will affect productivity, so it is usually 0. /A/
sea ~ / 0θA / 8 e Os preferably /
A/sea ~/0 people/sea.
本発明に係る光磁気媒体を光磁気記録媒体として用りる
場合、上記の複合窒化物保護層は透明性に優れるため記
録、再生光入射側に配置して用いるのが望ましい。多く
の場合記録再生光は基板側から入射させるので、本発明
の保護膜は多くの場合基板上に堆積される。When the magneto-optical medium according to the present invention is used as a magneto-optical recording medium, the composite nitride protective layer is preferably placed on the recording/reproducing light incident side because it has excellent transparency. In most cases, the recording/reproducing light is incident from the substrate side, so the protective film of the present invention is often deposited on the substrate.
基板としてガラスを用いた場合、基板側から水分や空気
が浸入することはほとんどないので、基板と磁性層との
間には本発明の保護層を設けず、反対側にのみ設ける場
合もある。When glass is used as the substrate, there is almost no chance of moisture or air entering from the substrate side, so the protective layer of the present invention may not be provided between the substrate and the magnetic layer, but may be provided only on the opposite side.
ポリカーボネート等の合成樹脂を基板とした場合には、
基板側からの水分や空気の浸入が考えられるので、基板
と磁性層との間に本発明の保護層を設ける必要がある。When the substrate is made of synthetic resin such as polycarbonate,
Since moisture and air may enter from the substrate side, it is necessary to provide the protective layer of the present invention between the substrate and the magnetic layer.
本発明の保護層を磁性層の７面に採用し、他面側を他の
保護層とすることも考えられ、その場合ＢＮ％１３１ｓ
Ｈ，、ＴｉＮ 、 ＺｒＮ １ＮｂＮ 、 ＴａＮ
などの窒化物、ま九は、 ＴｉＣ、ＮｂＣ、ＴａＯ、Ｆ
３１０ などの炭化物、ＴａＳｉ２、Ｃ１”＋３１２
、 Ｃ０８ｉ２、ｖｓ１２、Ｔｉ１３１ｚなどのケイ
化物等が保護層として用いることもてきる。勿論本発明
の保護層を他面側に用いても良い。It is also possible to adopt the protective layer of the present invention on seven sides of the magnetic layer and use the other side as another protective layer, in which case BN% 131s
H,, TiN, ZrN 1NbN, TaN
Nitrides such as TiC, NbC, TaO, F
Carbide such as 310, TaSi2, C1”+312
, C08i2, vs12, Ti131z, and other silicides can also be used as the protective layer. Of course, the protective layer of the present invention may be used on the other side.
本発明の保護層は磁性層との親和性に優れているので、
磁性層に直接液して設けることが望ましいが、本発明以
外の組成の保護層を本発明の保護層と磁性層との間に介
在させることも可能である。Since the protective layer of the present invention has excellent affinity with the magnetic layer,
Although it is preferable to apply the protective layer directly to the magnetic layer, it is also possible to interpose a protective layer having a composition other than that of the present invention between the protective layer of the present invention and the magnetic layer.
このようが構成をもつ光磁気媒体は、光磁気メモリーの
他に光磁気効果を利用する他のデバイス例えば光アイソ
レーターなどにも用いることができる。A magneto-optical medium having such a configuration can be used not only for a magneto-optical memory but also for other devices that utilize the magneto-optical effect, such as an optical isolator.
（実施例） 以下実施例によシざらに本発明の詳細な説明する。(Example) The present invention will be explained in detail below with reference to Examples.
実施例／
真空槽を／ Ｘ ／ ０＝ ｔａｒｒまで排気後、槽内
にＡｒ Ｏ〜−２０ＥＣＣＭ 、 Ｎ２ ｊ Ｏ〜ｊ
ＯＳＣＣＭを流入させ真空槽を！〜７（７ｍｔｏｒｒと
する。Example / After evacuating the vacuum chamber to /X/0=tarr, Ar O~-20ECCM, N2j O~j
Inject OSCCM into a vacuum chamber! ~7 (supposed to be 7 mtorr.
、／／ΦのＮ１）Ｓ１２ターゲツトまたは、Ｉｔ）Ｓｉ
２上に８１をｌＯｗａ口／Ｑ枚を二ローション部に配置
する。, //Φ N1) S12 target or It) Si
Place 81 on 2 and place 1 Owa mouth/Q piece on 2 lotion part.
投入Ｄｏ電力を ／！θ〜３θＯＷ、または投入ＲＩＦ
電力を ３００〜６θＯＷをターゲット上に印加してス
パッターを開始する。Input power /! θ~3θOW or input RIF
Sputtering is started by applying a power of 300 to 6θOW onto the target.
基板とターゲットの距離／３２’ｍｍである。The distance between the substrate and the target is 32'mm.
代表的な作製条件での膜厚１０θθλの膜をガラス基板
上に作製した場合の波長ｒ ００ ｎｍの光の透過率を
表に示す。The table shows the transmittance of light at a wavelength r 00 nm when a film having a thickness of 10θθλ is produced on a glass substrate under typical production conditions.
以上十分な透過率をもつ薄膜妙１イａられることがわか
った。It has been found that a thin film with sufficient transmittance can be obtained.
尚、ガラス基板自体の光透過率はター２チであるがこの
補正はしていない。Note that although the light transmittance of the glass substrate itself is tert.2, this correction is not made.
実ＭｊｆＩｌ−２
真空槽を！ Ｘ ／ ０−’ｔｏｒｒまで排気後、実施
例／と同様にＮ１）ＳｉＮ膜をｚｏｏ＾ ＦＣＲ（ポ
リカーボネイト）基板及び、ガラス基版上に成膜し、同
一真空中で、グ“φのＦｅ上に ／ Ｏｍ 口のＴ′ｂ
を６枚配置してＡｒ Ｌ ／ ｍｔｏｒｒでＤｏ スパ
ッターを行い、 ’ｒｂＦｅ ？θ０Ａを堆積し念。Real MjfIl-2 vacuum chamber! After evacuation to X/0-'torr, a N1) SiN film was formed on a zoo^FCR (polycarbonate) substrate and a glass substrate in the same manner as in Example/, and in the same vacuum, a ni / Om T'b of the mouth
Arrange 6 pieces of 'rbFe?' and perform Do sputtering at Ar L/mtorr. Just in case you accumulate θ0A.
次に同一真空中で再びＮｂ５ｉＮ膜を第１層のＮ１）Ｓ
ｉＮと同一条件で？００Ｘ成膜した。Next, in the same vacuum, the Nb5iN film was again deposited as the first layer of N1)S.
Under the same conditions as iN? 00X film was formed.
このようにして作製した光磁気媒体の静特性（カー回転
角）測定、加速試験を行なった。Static characteristics (Kerr rotation angle) of the magneto-optical medium thus prepared were measured and acceleration tests were conducted.
静特性ではＮｔ＋ＳｉＮ膜はカー回転角エンハンスメン
ト効果も有していることがわかった。In terms of static properties, it was found that the Nt+SiN film also has a Kerr rotation angle enhancement effect.
即ち、通常ＴｂＦｅはカー回転角（〜）θ、２０゜反射
率（Ｒ）ダｊチであるが、本光磁気媒体ではθｋｗθ、
３ｒ’Ｒ＝２ｔチがｉられ、エンハンスメント効果によ
る信号品質改良が可能でおることがわかった。That is, normally TbFe has a Kerr rotation angle (~) θ and a reflectance (R) of 20°, but in this magneto-optical medium, θkwθ,
3r'R=2t was calculated, and it was found that the signal quality could be improved by the enhancement effect.
次に加速試験について表で示す。表中ではｐｃＲ基板上
の剥離などの劣化がθに％Ｒの劣化よシ早く起っている
なめ、剥離などの劣化の結果を良、劣で示す。（加速試
験条件は７０℃、ｒ！チＲＨである。）
（ａｐ ニスバッターを略しｆｃ、 ）実施例３
Ｍｌ）Ｓｉ２のかわりＫ ＺｒＳｉ２を用いて同様の検
討を行なつ六所、光透過率？θ％以上が得られ、また加
速試験１０θ時間ではクラックや剥離は生じてい々い。Next, the accelerated test is shown in a table. In the table, since deterioration such as peeling on the PCR substrate occurs faster than the deterioration of %R in θ, the results of deterioration such as peeling are shown as good or poor. (The accelerated test conditions are 70°C, r!CHRH.) (ap stands for varnish batter, fc, ) Example 3 Ml) A similar study was conducted using K ZrSi2 instead of Si2. % or more was obtained, and no cracking or peeling occurred during the accelerated test for 10 θ hours.
（発明の効果）
本発明に係る光磁気媒体は、製膜時又は高湿度下でのク
ラック発生がおさえられ、良好な特性を有する。また、
保護膜の透明性が高いので高いＥ ／ Ｎ比が得られる
。(Effects of the Invention) The magneto-optical medium according to the present invention suppresses the occurrence of cracks during film formation or under high humidity, and has good characteristics. Also,
Since the protective film has high transparency, a high E/N ratio can be obtained.
また本発明の保護膜は電気伝導度が高いＩｔ）Ｂ１２等
のターゲットを用いることができるなめＤＣ反応性スパ
ッターが可能であり、基板ダメージが少なく且つ高速成
膜が可能である。Furthermore, since the protective film of the present invention can use a target such as It)B12 having high electrical conductivity, DC reactive sputtering is possible, and the film can be formed at high speed with less damage to the substrate.
出 願 人 三菱化成工業株式会社
代 理 人 弁理士 長谷用 −
（ほか７名）
手続補正書（自発）
昭和６７年７２−月２日
ｌ 事件の表示 昭和６／年 特許 項第２２７４′コ
弘号２発明 の名称 光磁気媒体
４代理人〒１００
東京都千代田区丸の内二丁目５番２号
（ほか １ 名）
６補正の内容
＋１１ 明細書第１頁第！行目〜第１６行目の特許請
求の範囲を別紙の通シ訂正する。Applicant Mitsubishi Chemical Industries, Ltd. Agent Patent Attorney Hase - (and 7 others) Procedural amendment (spontaneous) July 2, 1987 1 Case indication 1939 Patent Section 2274' Kohiro No. 2 Name of invention Magneto-optical medium 4 Agent 2-5-2 Marunouchi, Chiyoda-ku, Tokyo 100 (and 1 other person) 6 Contents of amendment + 11 Specification, page 1! The scope of claims in lines 1 to 16 will be corrected in the attached document.
する。do.
「実施例弘
党
≠インチ径のＳｌ タフゲットのエロション部ＫＴａ
チップ（！−）またはＩＯ朋０→配置して。"Example Hiroto ≠ Inch diameter SL Toughget's erotic part KTa
Chip (!-) or IO 0 → Place it.
投入ＲＩＰ電力を３００Ｗ、スパッターカス圧／ Ｏｒ
ｒＬｔｏｒｒ 、 Ａｒ 流ｔ／ ＯＳ（ＩＣＭ
、 Ｎ、流量弘ｏ ５ｃａｙ でスパッタリング
を行なった。ターゲットと基板（ガラス）間の距離を？
ｊｔｒｔｓとした場合の典型的な結果を次表に示す。Input RIP power 300W, sputter scum pressure/Or
rLtorr, Ar flow t/OS (ICM
, N, and a flow rate of 5cay. What is the distance between the target and the substrate (glass)?
Typical results for jtrts are shown in the table below.
膜厚は全て３２００〜Ｊｊｏｏ貨で透過率（ｒ ００
ｒｒａｎ ）及び屈折率はガラス基板上の値である。All film thicknesses are 3200~Jjoo coins and transmittance (r 00
rran ) and refractive index are values on the glass substrate.
’ａｌｌ １苓
実施例！
実施例コと同様にして、真空槽を２．Ｊ Ｘ １Ｏ−７
ｔｏｒｒ まで排気後実施例コと同様にして’ｒａｓ
ｉＮ、ＴｂＦｅ ％Ｔａ５ｉＮ の順に夫々♂０Ｑ２
．１００θＲ１ｒｏｏ’ｉｌの厚さに成膜した。この時
Ｔａ５ｉＮのＴａ チップ数は！□＄４を枚で実施例弘
と同一条件である。このようにして作製した媒体の静特
性を測定後、７０″ｃｒｔ％ＲＨの恒温恒湿槽に保持し
た。また比較例としてＡｌ５ＩＮ ｒｏｏ兄ＴｂＦｅ
１０ｏｏ’ｉ、Ａｌ５ＩＮ ｔｒｏｏ’ｉｙを項に設け
た場合の例を示す。Ａｌ８１Ｎｉｄ Ｓｉ ターゲット
のエロージョン部Ｋ ／ Ｏｔｒｒｊ’ｍ Ａｌ チッ
プを弘枚配置して作製した。'All 1 examples! A vacuum chamber was prepared in the same manner as in Example 2. JX 1O-7
After exhausting to torr, do the same as in the example.
iN, TbFe%Ta5iN, respectively ♂0Q2
．． A film was formed to a thickness of 100θR1roo'il. At this time, the number of Ta chips in Ta5iN is! □The same conditions as Example Hiroshi are used for $4. After measuring the static characteristics of the medium thus prepared, it was kept in a constant temperature and humidity chamber at 70''crt%RH.
An example is shown in which 10oo'i and Al5IN troo'iy are provided as terms. The erosion part of an Al81Nid Si target was prepared by arranging a large number of K/Otrrj'm Al chips.
恒温恒湿槽に２００時間保持後Ｔａ５ｉＮ保模膜を用い
たものは、剥離をおこさなかったが、Ａｌ５ｉＮ膜を用
いたものは剥離した。After being kept in a constant temperature and humidity chamber for 200 hours, the sample using the Ta5iN protective film did not peel off, but the sample using the Al5iN film did.
」
特許請求の範囲
（１）基板上に光磁気活性層を設けてなる光磁気媒体に
おいて、Ｔｉ、Ｚｒ、 Ｈｆ％Ｖ、 Ｎｂ、 Ｔａ。” Claim (1) A magneto-optical medium comprising a magneto-optical active layer provided on a substrate, comprising: Ti, Zr, Hf%V, Nb, Ta.
ｃｒ％ＭＯ又はＷから選ばれる少なくとも１種の金属と
ケイ素および窒素からなる複合窒化物を保護膜として形
成させてなる光磁気媒体。A magneto-optical medium in which a composite nitride made of at least one metal selected from cr% MO or W, silicon, and nitrogen is formed as a protective film.
（２）複合窒化物がＴｉ 、Ｚｒ 、 Ｎｂ 又はＴ
ａ から選ばれる少なくとも１種の金属とケイ素およ
び窒素からなる特許請求の範囲第１項に記載の光磁気媒
体。(2) Composite nitride is Ti, Zr, Nb or T
The magneto-optical medium according to claim 1, comprising at least one metal selected from a, silicon and nitrogen.
（３）保護膜は磁性層に直接接して形成させたことを特
徴とする特許請求の範囲第１項に記載の光磁気媒体。(3) The magneto-optical medium according to claim 1, wherein the protective film is formed in direct contact with the magnetic layer.
載の光磁気媒体。magneto-optical media.
Claims (3)
おいて、Ｔｉ、Ｚｒ、Ｈｆ、Ｖ、Ｎｂ、Ｔａ、Ｃｒ、Ｍ
ｏ又はＷから選ばれる少なくとも１種の 金属とケイ素および窒素からなる複合窒化物を保護膜と
して形成させてなる光磁気媒体。(1) In a magneto-optical medium in which a magneto-optical active layer is provided on a substrate, Ti, Zr, Hf, V, Nb, Ta, Cr, M
1. A magneto-optical medium formed by forming a composite nitride of at least one metal selected from o or W, silicon and nitrogen as a protective film.
れる少なくとも１種の金属とケイ素および窒素からなる
特許請求の範囲第１項に記載の光磁気媒体。(2) The magneto-optical medium according to claim 1, wherein the composite nitride comprises at least one metal selected from Ti, Zr, Nb, or Ta, silicon, and nitrogen.
徴とする特許請求の範囲第１項に記載の光磁気媒体。(3) The magneto-optical medium according to claim 1, wherein the protective film is formed in direct contact with the magnetic layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22742486A JPS6381643A (en) | 1986-09-26 | 1986-09-26 | Magneto-optical medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22742486A JPS6381643A (en) | 1986-09-26 | 1986-09-26 | Magneto-optical medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6381643A true JPS6381643A (en) | 1988-04-12 |
Family
ID=16860629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22742486A Pending JPS6381643A (en) | 1986-09-26 | 1986-09-26 | Magneto-optical medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6381643A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0240147A (en) * | 1988-07-29 | 1990-02-08 | Hitachi Ltd | Magneto-optical recording medium and production thereof |
| JPH02152046A (en) * | 1988-12-02 | 1990-06-12 | Daicel Chem Ind Ltd | Magneto-optical medium |
| EP0391423A2 (en) * | 1989-04-06 | 1990-10-10 | Mitsui Petrochemical Industries, Ltd. | Optical recording medium and method of making same |
| US5232790A (en) * | 1990-04-28 | 1993-08-03 | Kyocera Corporation | Magneto-optical recording disc and method of producing it |
| EP1571658A2 (en) * | 2004-03-03 | 2005-09-07 | NEC Corporation | Optical information recording medium and method of manufacturing the same |
| CN108346499A (en) * | 2018-02-07 | 2018-07-31 | 徐靖才 | A kind of method that organic light rare earth complex modification prepares high-coercivity manganese bismuth magnetic powder |
-
1986
- 1986-09-26 JP JP22742486A patent/JPS6381643A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0240147A (en) * | 1988-07-29 | 1990-02-08 | Hitachi Ltd | Magneto-optical recording medium and production thereof |
| JPH02152046A (en) * | 1988-12-02 | 1990-06-12 | Daicel Chem Ind Ltd | Magneto-optical medium |
| EP0391423A2 (en) * | 1989-04-06 | 1990-10-10 | Mitsui Petrochemical Industries, Ltd. | Optical recording medium and method of making same |
| US5232790A (en) * | 1990-04-28 | 1993-08-03 | Kyocera Corporation | Magneto-optical recording disc and method of producing it |
| EP1571658A2 (en) * | 2004-03-03 | 2005-09-07 | NEC Corporation | Optical information recording medium and method of manufacturing the same |
| EP1571658A3 (en) * | 2004-03-03 | 2005-11-16 | NEC Corporation | Optical information recording medium and method of manufacturing the same |
| CN108346499A (en) * | 2018-02-07 | 2018-07-31 | 徐靖才 | A kind of method that organic light rare earth complex modification prepares high-coercivity manganese bismuth magnetic powder |
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