JPS6316914B2 - - Google Patents

Info

Publication number
JPS6316914B2
JPS6316914B2 JP58087194A JP8719483A JPS6316914B2 JP S6316914 B2 JPS6316914 B2 JP S6316914B2 JP 58087194 A JP58087194 A JP 58087194A JP 8719483 A JP8719483 A JP 8719483A JP S6316914 B2 JPS6316914 B2 JP S6316914B2
Authority
JP
Japan
Prior art keywords
layer
boron
solar cell
distribution
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58087194A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59213176A (ja
Inventor
Masakazu Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Corporate Research and Development Ltd filed Critical Fuji Electric Corporate Research and Development Ltd
Priority to JP58087194A priority Critical patent/JPS59213176A/ja
Publication of JPS59213176A publication Critical patent/JPS59213176A/ja
Publication of JPS6316914B2 publication Critical patent/JPS6316914B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP58087194A 1983-05-18 1983-05-18 薄膜太陽電池の製造方法 Granted JPS59213176A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58087194A JPS59213176A (ja) 1983-05-18 1983-05-18 薄膜太陽電池の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58087194A JPS59213176A (ja) 1983-05-18 1983-05-18 薄膜太陽電池の製造方法

Publications (2)

Publication Number Publication Date
JPS59213176A JPS59213176A (ja) 1984-12-03
JPS6316914B2 true JPS6316914B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-04-11

Family

ID=13908169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58087194A Granted JPS59213176A (ja) 1983-05-18 1983-05-18 薄膜太陽電池の製造方法

Country Status (1)

Country Link
JP (1) JPS59213176A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4692558A (en) * 1983-05-11 1987-09-08 Chronar Corporation Counteraction of semiconductor impurity effects
JPH0232569A (ja) * 1988-07-22 1990-02-02 Mitsubishi Electric Corp アモルファス太陽電池
US5736431A (en) * 1995-02-28 1998-04-07 Semiconductor Energy Laboratory Co., Ltd. Method for producing thin film solar battery
JPH11246971A (ja) 1998-03-03 1999-09-14 Canon Inc 微結晶シリコン系薄膜の作製方法及び作製装置
TW201108448A (en) * 2009-04-06 2011-03-01 Ulvac Inc Method and system for manufacturing photoelectric conversion device
RU2698491C1 (ru) * 2019-03-06 2019-08-28 Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" Способ изготовления преобразователя солнечной энергии с высоким КПД

Also Published As

Publication number Publication date
JPS59213176A (ja) 1984-12-03

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