JPS63168034A - 半導体装置の多層ゲ−ト電極の形成方法 - Google Patents
半導体装置の多層ゲ−ト電極の形成方法Info
- Publication number
- JPS63168034A JPS63168034A JP61315407A JP31540786A JPS63168034A JP S63168034 A JPS63168034 A JP S63168034A JP 61315407 A JP61315407 A JP 61315407A JP 31540786 A JP31540786 A JP 31540786A JP S63168034 A JPS63168034 A JP S63168034A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polysilicon
- electrode
- gate electrode
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 230000015572 biosynthetic process Effects 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 44
- 229920005591 polysilicon Polymers 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 230000003647 oxidation Effects 0.000 claims abstract description 4
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 3
- 239000011574 phosphorus Substances 0.000 abstract description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61315407A JPS63168034A (ja) | 1986-12-27 | 1986-12-27 | 半導体装置の多層ゲ−ト電極の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61315407A JPS63168034A (ja) | 1986-12-27 | 1986-12-27 | 半導体装置の多層ゲ−ト電極の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63168034A true JPS63168034A (ja) | 1988-07-12 |
| JPH0376033B2 JPH0376033B2 (enrdf_load_stackoverflow) | 1991-12-04 |
Family
ID=18065013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61315407A Granted JPS63168034A (ja) | 1986-12-27 | 1986-12-27 | 半導体装置の多層ゲ−ト電極の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63168034A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03185860A (ja) * | 1989-12-15 | 1991-08-13 | Toshiba Corp | 不揮発性半導体記憶装置およびその製造方法 |
| US5208170A (en) * | 1991-09-18 | 1993-05-04 | International Business Machines Corporation | Method for fabricating bipolar and CMOS devices in integrated circuits using contact metallization for local interconnect and via landing |
| US6018181A (en) * | 1990-10-12 | 2000-01-25 | Mitsubishi Denki Kabushiki Kaisha | Thin film transistor and manufacturing method thereof |
-
1986
- 1986-12-27 JP JP61315407A patent/JPS63168034A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03185860A (ja) * | 1989-12-15 | 1991-08-13 | Toshiba Corp | 不揮発性半導体記憶装置およびその製造方法 |
| US6018181A (en) * | 1990-10-12 | 2000-01-25 | Mitsubishi Denki Kabushiki Kaisha | Thin film transistor and manufacturing method thereof |
| US5208170A (en) * | 1991-09-18 | 1993-05-04 | International Business Machines Corporation | Method for fabricating bipolar and CMOS devices in integrated circuits using contact metallization for local interconnect and via landing |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0376033B2 (enrdf_load_stackoverflow) | 1991-12-04 |
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