JPS63164252U - - Google Patents
Info
- Publication number
- JPS63164252U JPS63164252U JP2970687U JP2970687U JPS63164252U JP S63164252 U JPS63164252 U JP S63164252U JP 2970687 U JP2970687 U JP 2970687U JP 2970687 U JP2970687 U JP 2970687U JP S63164252 U JPS63164252 U JP S63164252U
- Authority
- JP
- Japan
- Prior art keywords
- region
- base
- emitter
- power semiconductor
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
Landscapes
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1987029706U JP2524553Y2 (ja) | 1987-02-27 | 1987-02-27 | 電力用半導体素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1987029706U JP2524553Y2 (ja) | 1987-02-27 | 1987-02-27 | 電力用半導体素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63164252U true JPS63164252U (pt) | 1988-10-26 |
JP2524553Y2 JP2524553Y2 (ja) | 1997-02-05 |
Family
ID=30833833
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1987029706U Expired - Lifetime JP2524553Y2 (ja) | 1987-02-27 | 1987-02-27 | 電力用半導体素子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2524553Y2 (pt) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000067330A1 (fr) * | 1999-04-30 | 2000-11-09 | Rohm Co., Ltd. | Dispositif a semi-conducteur dote de transistors bipolaires |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55165672A (en) * | 1979-06-11 | 1980-12-24 | Fujitsu Ltd | Semiconductor device |
JPS58116243U (ja) * | 1982-02-03 | 1983-08-08 | 三洋電機株式会社 | トランジスタ構造 |
-
1987
- 1987-02-27 JP JP1987029706U patent/JP2524553Y2/ja not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55165672A (en) * | 1979-06-11 | 1980-12-24 | Fujitsu Ltd | Semiconductor device |
JPS58116243U (ja) * | 1982-02-03 | 1983-08-08 | 三洋電機株式会社 | トランジスタ構造 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000067330A1 (fr) * | 1999-04-30 | 2000-11-09 | Rohm Co., Ltd. | Dispositif a semi-conducteur dote de transistors bipolaires |
Also Published As
Publication number | Publication date |
---|---|
JP2524553Y2 (ja) | 1997-02-05 |
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