JPS6315756B2 - - Google Patents
Info
- Publication number
- JPS6315756B2 JPS6315756B2 JP7429777A JP7429777A JPS6315756B2 JP S6315756 B2 JPS6315756 B2 JP S6315756B2 JP 7429777 A JP7429777 A JP 7429777A JP 7429777 A JP7429777 A JP 7429777A JP S6315756 B2 JPS6315756 B2 JP S6315756B2
- Authority
- JP
- Japan
- Prior art keywords
- coating
- coupling element
- optical
- light
- coupling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000003287 optical effect Effects 0.000 claims description 57
- 239000011248 coating agent Substances 0.000 claims description 45
- 238000000576 coating method Methods 0.000 claims description 45
- 230000008878 coupling Effects 0.000 claims description 42
- 238000010168 coupling process Methods 0.000 claims description 42
- 238000005859 coupling reaction Methods 0.000 claims description 42
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 18
- 239000000126 substance Substances 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 239000004408 titanium dioxide Substances 0.000 claims description 9
- 230000005693 optoelectronics Effects 0.000 claims description 7
- 229920003002 synthetic resin Polymers 0.000 claims description 7
- 239000000057 synthetic resin Substances 0.000 claims description 7
- 230000003595 spectral effect Effects 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 4
- 125000003636 chemical group Chemical group 0.000 claims description 3
- 239000003086 colorant Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000000843 powder Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Optical Couplings Of Light Guides (AREA)
- Light Guides In General And Applications Therefor (AREA)
- Luminescent Compositions (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2627944A DE2627944C2 (de) | 1976-06-22 | 1976-06-22 | Optoelektronisches Koppelelement |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53144A JPS53144A (en) | 1978-01-05 |
JPS6315756B2 true JPS6315756B2 (e) | 1988-04-06 |
Family
ID=5981152
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7429777A Granted JPS53144A (en) | 1976-06-22 | 1977-06-22 | Optooelectronics coupling element |
Country Status (7)
Country | Link |
---|---|
US (1) | US4095116A (e) |
JP (1) | JPS53144A (e) |
DE (1) | DE2627944C2 (e) |
FR (1) | FR2356281A1 (e) |
GB (1) | GB1521676A (e) |
IT (1) | IT1078313B (e) |
SE (1) | SE422864B (e) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4179619A (en) * | 1977-12-02 | 1979-12-18 | General Electric Company | Optocoupler having internal reflection and improved isolation capabilities |
US4412135A (en) * | 1979-03-23 | 1983-10-25 | Sharp Kabushiki Kaisha | Photo coupler device molding including filler particles |
DE3011902C2 (de) * | 1980-03-27 | 1996-11-28 | Siemens Ag | Optoelektronische Koppeleinrichtung |
US4450461A (en) * | 1981-07-24 | 1984-05-22 | General Electric Company | Low cost high isolation voltage optocoupler with improved light transmissivity |
DE3305044A1 (de) * | 1983-02-14 | 1984-08-16 | Siemens AG, 1000 Berlin und 8000 München | Optokoppler |
US4688076A (en) * | 1983-04-22 | 1987-08-18 | The Charles Stark Draper Laboratory, Inc. | Noise reducing heat sink for semiconductor laser diodes |
DE3512958A1 (de) * | 1984-05-08 | 1985-11-14 | Telefunken electronic GmbH, 7100 Heilbronn | Optoelektronisches koppelelement |
US4645551A (en) * | 1984-08-31 | 1987-02-24 | Motorola, Inc. | Method of making an octocoupler |
FR2656739A1 (fr) * | 1989-12-29 | 1991-07-05 | Radiotechnique Compelec | Photo-coupleur pour montage en surface. |
JP2012186305A (ja) * | 2011-03-04 | 2012-09-27 | Renesas Electronics Corp | 光結合素子及び光結合素子の製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3153149A (en) * | 1962-08-20 | 1964-10-13 | Raytheon Co | Photosensitive electro-optical device with electrostatic shielding means |
US3660669A (en) * | 1970-04-15 | 1972-05-02 | Motorola Inc | Optical coupler made by juxtaposition of lead frame mounted sensor and light emitter |
FR2272377B1 (e) * | 1974-05-24 | 1977-06-24 | Texas Instruments France | |
DE2431375C3 (de) * | 1974-06-29 | 1978-03-09 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen eines optoelektronischen Koppelelementes |
FR2295437A1 (fr) * | 1974-12-20 | 1976-07-16 | Thomson Csf | Systeme de liaison par transmission optique au moyen de guides de lumiere |
-
1976
- 1976-06-22 DE DE2627944A patent/DE2627944C2/de not_active Expired
-
1977
- 1977-06-13 FR FR7718026A patent/FR2356281A1/fr active Granted
- 1977-06-13 US US05/805,992 patent/US4095116A/en not_active Expired - Lifetime
- 1977-06-20 IT IT24842/77A patent/IT1078313B/it active
- 1977-06-21 GB GB25784/77A patent/GB1521676A/en not_active Expired
- 1977-06-22 JP JP7429777A patent/JPS53144A/ja active Granted
- 1977-06-22 SE SE7707259A patent/SE422864B/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
FR2356281B1 (e) | 1982-12-03 |
US4095116A (en) | 1978-06-13 |
SE7707259L (sv) | 1977-12-23 |
GB1521676A (en) | 1978-08-16 |
DE2627944A1 (de) | 1978-01-05 |
JPS53144A (en) | 1978-01-05 |
IT1078313B (it) | 1985-05-08 |
DE2627944C2 (de) | 1985-05-15 |
SE422864B (sv) | 1982-03-29 |
FR2356281A1 (fr) | 1978-01-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6315756B2 (e) | ||
US4179619A (en) | Optocoupler having internal reflection and improved isolation capabilities | |
JP5340157B2 (ja) | オプトエレクロニクスデバイスのためのハウジング、オプトエレクトロニスクデバイスおよびオプトエレクロニクスデバイスのためのハウジングを製造する方法 | |
KR19990013531A (ko) | 광 반도체 모듈 및 그 제조 방법 | |
GB2381125A (en) | Hybrid LED | |
US4054801A (en) | Photoelectric coupler | |
US4300811A (en) | III-V Direct-bandgap semiconductor optical filter | |
KR20030085499A (ko) | 발광 다이오드 | |
US10634831B2 (en) | Photochromic glass | |
US20190006550A1 (en) | Semiconductor device | |
JPS6228596B2 (e) | ||
JPS6278856A (ja) | 半導体装置 | |
JPH05315652A (ja) | 光半導体装置 | |
US10364962B2 (en) | Laser activated remote phosphor target with low index coating on phosphor, method of manufacture and method for re-directing emissions | |
CN109946872A (zh) | 显示设备 | |
JP2006179767A (ja) | リモコン受光ユニットおよびそれを用いた電子機器 | |
KR102313269B1 (ko) | 광센서 장치 | |
JP2012186305A (ja) | 光結合素子及び光結合素子の製造方法 | |
CN209087903U (zh) | 一种led光源及其背光模组 | |
US4412135A (en) | Photo coupler device molding including filler particles | |
RU2263999C1 (ru) | Интегральный оптрон | |
KR20150143258A (ko) | 광변색 유리 | |
US10794760B2 (en) | Optical sensor device | |
US3478215A (en) | Optical-electronic semiconductor unitary device comprising light transmitter,light receiver,and connecting light conductor of chromium doped gallium arsenide | |
US20150108491A1 (en) | Light emitting diode package |