JPS6315679B2 - - Google Patents

Info

Publication number
JPS6315679B2
JPS6315679B2 JP58219329A JP21932983A JPS6315679B2 JP S6315679 B2 JPS6315679 B2 JP S6315679B2 JP 58219329 A JP58219329 A JP 58219329A JP 21932983 A JP21932983 A JP 21932983A JP S6315679 B2 JPS6315679 B2 JP S6315679B2
Authority
JP
Japan
Prior art keywords
transistor
high voltage
voltage
circuit
selection signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58219329A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60113397A (ja
Inventor
Manabu Tsuchida
Masanobu Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58219329A priority Critical patent/JPS60113397A/ja
Priority to KR8407205A priority patent/KR900006140B1/ko
Priority to DE8484308042T priority patent/DE3484174D1/de
Priority to EP84308042A priority patent/EP0143596B1/en
Priority to US06/674,813 priority patent/US4649521A/en
Publication of JPS60113397A publication Critical patent/JPS60113397A/ja
Publication of JPS6315679B2 publication Critical patent/JPS6315679B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits

Landscapes

  • Read Only Memory (AREA)
JP58219329A 1983-11-24 1983-11-24 プログラマブルリ−ドオンリメモリ装置 Granted JPS60113397A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP58219329A JPS60113397A (ja) 1983-11-24 1983-11-24 プログラマブルリ−ドオンリメモリ装置
KR8407205A KR900006140B1 (en) 1983-11-24 1984-11-16 Programmable read - only memory devices
DE8484308042T DE3484174D1 (de) 1983-11-24 1984-11-20 Programmierbare festwertspeicheranordnung.
EP84308042A EP0143596B1 (en) 1983-11-24 1984-11-20 Programmable read-only memory device
US06/674,813 US4649521A (en) 1983-11-24 1984-11-26 Programmable read-only memory (PROM) device having reduced programming voltage capability

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58219329A JPS60113397A (ja) 1983-11-24 1983-11-24 プログラマブルリ−ドオンリメモリ装置

Publications (2)

Publication Number Publication Date
JPS60113397A JPS60113397A (ja) 1985-06-19
JPS6315679B2 true JPS6315679B2 (enExample) 1988-04-05

Family

ID=16733752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58219329A Granted JPS60113397A (ja) 1983-11-24 1983-11-24 プログラマブルリ−ドオンリメモリ装置

Country Status (5)

Country Link
US (1) US4649521A (enExample)
EP (1) EP0143596B1 (enExample)
JP (1) JPS60113397A (enExample)
KR (1) KR900006140B1 (enExample)
DE (1) DE3484174D1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62175999A (ja) * 1986-01-29 1987-08-01 Toshiba Corp 不揮発性半導体記憶装置
JPS6342090A (ja) * 1986-08-07 1988-02-23 Fujitsu Ltd ユニバーサルジョイント
FR2604555B1 (fr) * 1986-09-30 1988-11-10 Eurotechnique Sa Circuit integre du type circuit logique comportant une memoire non volatile programmable electriquement
FR2609831B1 (fr) * 1987-01-16 1989-03-31 Thomson Semiconducteurs Circuit de lecture pour memoire
JPS63252481A (ja) * 1987-04-09 1988-10-19 Toshiba Corp 不揮発性半導体メモリ
JPS6432494A (en) * 1987-07-27 1989-02-02 Mitsubishi Electric Corp Non-volatile semiconductor storage device
JPS6437797A (en) * 1987-08-03 1989-02-08 Oki Electric Ind Co Ltd Eprom device
DE3934303C2 (de) * 1988-10-15 2001-01-25 Sony Corp Adreßdecoder für nichtflüchtige Speicher
JPH0821849B2 (ja) * 1988-10-25 1996-03-04 富士通株式会社 半導体記憶装置
US5327392A (en) * 1989-01-13 1994-07-05 Kabushiki Kaisha Toshiba Semiconductor integrated circuit capable of preventing occurrence of erroneous operation due to noise
US5519654A (en) * 1990-09-17 1996-05-21 Kabushiki Kaisha Toshiba Semiconductor memory device with external capacitor to charge pump in an EEPROM circuit
WO1992005559A1 (fr) * 1990-09-17 1992-04-02 Kabushiki Kaisha Toshiba Dispositif de memorisation a semiconducteur
EP1126472B1 (en) * 1991-11-20 2003-03-05 Fujitsu Limited Flash-erasable semiconductor memory device
EP0961290B1 (en) * 1991-12-09 2001-11-14 Fujitsu Limited Flash memory with improved erasability and its circuitry
US5668485A (en) * 1992-05-21 1997-09-16 Texas Instruments Incorporated Row decoder with level translator
DE19500393C1 (de) * 1995-01-09 1996-02-22 Siemens Ag Schaltungsanordnung zum Schalten höherer Spannungen auf einem Halbleiterchip und Verfahren zu dessen Betreiben
US5633832A (en) * 1995-09-26 1997-05-27 Alliance Semiconductor Corporation Reduced area word line driving circuit for random access memory
US5781497A (en) * 1996-08-02 1998-07-14 Alliance Semiconductor Corp. Random access memory word line select circuit having rapid dynamic deselect
DE10031806B4 (de) * 1999-07-29 2012-08-16 Fujitsu Semiconductor Ltd. Taktsteuerschaltung, Verfahren zum Erzeugen eines internen Taktsignals und synchroner Flash-Speicher
GB2437107A (en) 2006-04-13 2007-10-17 Sharp Kk Programmable read-only memory
KR100676372B1 (ko) * 2006-10-20 2007-02-02 (주)티 에스 에이 콜렉션 직물지 봉제방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3886532A (en) * 1974-05-08 1975-05-27 Sperry Rand Corp Integrated four-phase digital memory circuit with decoders
US4340943A (en) * 1979-05-31 1982-07-20 Tokyo Shibaura Denki Kabushiki Kaisha Memory device utilizing MOS FETs
US4282446A (en) * 1979-10-01 1981-08-04 Texas Instruments Incorporated High density floating gate EPROM programmable by charge storage
JPS5847793B2 (ja) * 1979-11-12 1983-10-25 富士通株式会社 半導体記憶装置
JPS5831677B2 (ja) * 1979-11-26 1983-07-07 富士通株式会社 半導体記億装置
JPS57130291A (en) * 1981-02-05 1982-08-12 Toshiba Corp Semiconductor nonvolatile read-only storage device
GB2094086B (en) * 1981-03-03 1985-08-14 Tokyo Shibaura Electric Co Non-volatile semiconductor memory system
JPS5891680A (ja) * 1981-11-26 1983-05-31 Fujitsu Ltd 半導体装置
US4434478A (en) * 1981-11-27 1984-02-28 International Business Machines Corporation Programming floating gate devices

Also Published As

Publication number Publication date
EP0143596A3 (en) 1987-09-02
KR900006140B1 (en) 1990-08-24
DE3484174D1 (de) 1991-04-04
EP0143596A2 (en) 1985-06-05
JPS60113397A (ja) 1985-06-19
US4649521A (en) 1987-03-10
EP0143596B1 (en) 1991-02-27
KR850003617A (ko) 1985-06-20

Similar Documents

Publication Publication Date Title
JPS6315679B2 (enExample)
KR930000854B1 (ko) 반도체메모리셀 및 반도체메모리
US5514994A (en) Bootstrap circuit
US4704547A (en) IGFET gating circuit having reduced electric field degradation
JPH0143400B2 (enExample)
EP0280883B1 (en) Nonvolatile semiconductor memory
US4443714A (en) Semiconductor buffer circuit having compensation for power source fluctuation
US6266276B1 (en) Non-volatile semiconductor memory device and internal operation method for said non-volatile semiconductor memory device
KR101553441B1 (ko) 워드라인 드라이버 및 그 관련 방법
JPS6137717B2 (enExample)
EP0068892A2 (en) Inverter circuit
JP3161052B2 (ja) 不揮発性半導体記憶装置
JPH0516119B2 (enExample)
US4592020A (en) Semiconductor memory device having clamp circuits
IE53090B1 (en) Semiconductor circuit for driving clock signal line
JP2829034B2 (ja) 半導体回路
KR900002804B1 (ko) 고전위 보존회로
JPH07153287A (ja) 不揮発性半導体記憶装置
JPH0652692A (ja) フローティングゲート型メモリデバイスのプログラミング方法
US4525640A (en) High performance and gate having an "natural" or zero threshold transistor for providing a faster rise time for the output
JPS6321998B2 (enExample)
JPH04245470A (ja) バッファ回路
KR0132368B1 (ko) 데이타 출력버퍼
JPH0318349B2 (enExample)
JPH0527195B2 (enExample)