JPS6315445A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS6315445A JPS6315445A JP61160374A JP16037486A JPS6315445A JP S6315445 A JPS6315445 A JP S6315445A JP 61160374 A JP61160374 A JP 61160374A JP 16037486 A JP16037486 A JP 16037486A JP S6315445 A JPS6315445 A JP S6315445A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- active region
- region
- si3n4
- isolation region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000005530 etching Methods 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000002955 isolation Methods 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000010894 electron beam technology Methods 0.000 claims abstract description 4
- 238000000926 separation method Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 25
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 18
- 229910052681 coesite Inorganic materials 0.000 abstract description 13
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 13
- 229910052682 stishovite Inorganic materials 0.000 abstract description 13
- 229910052905 tridymite Inorganic materials 0.000 abstract description 13
- 239000000377 silicon dioxide Substances 0.000 abstract description 12
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 abstract description 8
- 239000001301 oxygen Substances 0.000 abstract description 8
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 4
- 210000003323 beak Anatomy 0.000 abstract 2
- 238000007493 shaping process Methods 0.000 abstract 1
- 238000000638 solvent extraction Methods 0.000 abstract 1
- 238000010301 surface-oxidation reaction Methods 0.000 abstract 1
- 241000293849 Cordylanthus Species 0.000 description 11
- 230000001590 oxidative effect Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 229910007277 Si3 N4 Inorganic materials 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61160374A JPS6315445A (ja) | 1986-07-08 | 1986-07-08 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61160374A JPS6315445A (ja) | 1986-07-08 | 1986-07-08 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6315445A true JPS6315445A (ja) | 1988-01-22 |
| JPH0434298B2 JPH0434298B2 (enrdf_load_stackoverflow) | 1992-06-05 |
Family
ID=15713585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61160374A Granted JPS6315445A (ja) | 1986-07-08 | 1986-07-08 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6315445A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5028559A (en) * | 1989-03-23 | 1991-07-02 | Motorola Inc. | Fabrication of devices having laterally isolated semiconductor regions |
| JPH0437523U (enrdf_load_stackoverflow) * | 1990-07-25 | 1992-03-30 | ||
| KR100414230B1 (ko) * | 1996-12-24 | 2004-03-26 | 주식회사 하이닉스반도체 | 반도체장치의소자분리막형성방법 |
-
1986
- 1986-07-08 JP JP61160374A patent/JPS6315445A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5028559A (en) * | 1989-03-23 | 1991-07-02 | Motorola Inc. | Fabrication of devices having laterally isolated semiconductor regions |
| JPH0437523U (enrdf_load_stackoverflow) * | 1990-07-25 | 1992-03-30 | ||
| KR100414230B1 (ko) * | 1996-12-24 | 2004-03-26 | 주식회사 하이닉스반도체 | 반도체장치의소자분리막형성방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0434298B2 (enrdf_load_stackoverflow) | 1992-06-05 |
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