JPS6314871B2 - - Google Patents

Info

Publication number
JPS6314871B2
JPS6314871B2 JP57230091A JP23009182A JPS6314871B2 JP S6314871 B2 JPS6314871 B2 JP S6314871B2 JP 57230091 A JP57230091 A JP 57230091A JP 23009182 A JP23009182 A JP 23009182A JP S6314871 B2 JPS6314871 B2 JP S6314871B2
Authority
JP
Japan
Prior art keywords
implantation
approximately
dose
gaas substrate
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57230091A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59123274A (ja
Inventor
Hidetake Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57230091A priority Critical patent/JPS59123274A/ja
Publication of JPS59123274A publication Critical patent/JPS59123274A/ja
Publication of JPS6314871B2 publication Critical patent/JPS6314871B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57230091A 1982-12-28 1982-12-28 半導体装置の製造方法 Granted JPS59123274A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57230091A JPS59123274A (ja) 1982-12-28 1982-12-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57230091A JPS59123274A (ja) 1982-12-28 1982-12-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59123274A JPS59123274A (ja) 1984-07-17
JPS6314871B2 true JPS6314871B2 (enrdf_load_stackoverflow) 1988-04-01

Family

ID=16902402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57230091A Granted JPS59123274A (ja) 1982-12-28 1982-12-28 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59123274A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63124863A (ja) * 1986-11-14 1988-05-28 Komatsu Zenoa Kk 2サイクルエンジン
JPH0218657U (enrdf_load_stackoverflow) * 1988-07-18 1990-02-07

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6321864A (ja) * 1986-07-16 1988-01-29 Oki Electric Ind Co Ltd 半導体素子の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63124863A (ja) * 1986-11-14 1988-05-28 Komatsu Zenoa Kk 2サイクルエンジン
JPH0218657U (enrdf_load_stackoverflow) * 1988-07-18 1990-02-07

Also Published As

Publication number Publication date
JPS59123274A (ja) 1984-07-17

Similar Documents

Publication Publication Date Title
KR100341535B1 (ko) 소스/드레인 접합부에서 측방 도핑 분포를 급경사지게형성하는 방법 및 소자
US3909320A (en) Method for forming MOS structure using double diffusion
JPH0116025B2 (enrdf_load_stackoverflow)
US5874338A (en) MOS-technology power device and process of making same
JPH0259624B2 (enrdf_load_stackoverflow)
US4596068A (en) Process for minimizing boron depletion in N-channel FET at the silicon-silicon oxide interface
JPH0329301B2 (enrdf_load_stackoverflow)
JPS6314871B2 (enrdf_load_stackoverflow)
US4712291A (en) Process of fabricating TiW/Si self-aligned gate for GaAs MESFETs
JPS63278265A (ja) 半導体BiCMOS装置の製造方法
US4889817A (en) Method of manufacturing schottky gate field transistor by ion implantation method
JPH0346224A (ja) Mesfet製造方法
JPS60164365A (ja) 半導体装置の製造方法
JPS6329420B2 (enrdf_load_stackoverflow)
JPS6142963A (ja) 半導体装置の製造方法
JPH0434821B2 (enrdf_load_stackoverflow)
JP3210533B2 (ja) 電界効果トランジスタの製造方法
JPS622705B2 (enrdf_load_stackoverflow)
JPS63281473A (ja) 電界効果型半導体装置及びその製造方法
JPS60206075A (ja) 電界効果型半導体装置の製造方法
JP3024172B2 (ja) 半導体装置およびその製造方法
JPS6449266A (en) Transistor
JPS5893290A (ja) シヨツトキバリア電界効果トランジスタの製造方法
JPS6077467A (ja) 電界効果トランジスタの製造方法
JPS6122872B2 (enrdf_load_stackoverflow)