JPS63144622U - - Google Patents

Info

Publication number
JPS63144622U
JPS63144622U JP3627988U JP3627988U JPS63144622U JP S63144622 U JPS63144622 U JP S63144622U JP 3627988 U JP3627988 U JP 3627988U JP 3627988 U JP3627988 U JP 3627988U JP S63144622 U JPS63144622 U JP S63144622U
Authority
JP
Japan
Prior art keywords
interface
light
curvature
index
superlattice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3627988U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS63144622U publication Critical patent/JPS63144622U/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F3/00Optical logic elements; Optical bistable devices
    • G02F3/02Optical bistable devices
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/3511Self-focusing or self-trapping of light; Light-induced birefringence; Induced optical Kerr-effect
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/353Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
    • G02F1/3536Four-wave interaction
    • G02F1/3538Four-wave interaction for optical phase conjugation

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Description

【図面の簡単な説明】
第1図は理想的な超格子における第1ブリユア
ン・ゾーンのkスペース対伝導帯エネルギのプロ
ツト図、第2図は第1ミニゾーンに及び、伝熱帯
の最低エネルギ・バンドだけを含む第1図の一部
拡大図、第3図は本考案による、非線形素子とし
て選択された超格子を含む線形/非線形インター
フエイス光学スイツチング・デバイスの説明図で
、このデバイスが“オフ”状態である時の図、第
4図は第3図のデバイスの“オン”状態を示すも
ので、制御ビームを含んだ第3図のデバイスの変
形例図、第5図は第3図のデバイスの作動が制限
された場合を示す図、第6図は第4図のデバイス
のための出力光強さ対入力光強さの定性プロツト
図、第7図は第3図のデバイスの作動がさらに制
限された場合を示す図、第8図は超格子を用いる
フアブリー・ペロー・エタロンを示す図、第9図
は第8図のエタロンの出力パワー対光路長のプロ
ツト図、第10図は双安定光学デバイスとしての
使用例を説明する第8図の出力光強さ対入力光強
さのプロツト図、第11図は超格子を用いる位相
共役ミラーの略図である。 26……光学スイツチング・デバイス、28…
…インターフエイス、30……線形光学領域(屈
曲率n1)、32……非線形光学領域(屈折率n
2)、34,36……交互層。

Claims (1)

    【実用新案登録請求の範囲】
  1. 第1の屈曲率を有する線形光学領域と;その線
    形光学領域とのインターフエイスを有するととも
    に、受ける照射がある条件下にあるときは前記第
    1の屈曲率よりも小さい、第2の屈曲率を有する
    超格子領域と;前記線形光学領域の方から前記イ
    ンターフエイスを光で照射する照射手段であつて
    、少くともその光の強度が或る値にあるときは、
    前記インターフエイスで全反射されるような角度
    で、その光を前記インターフエイスに入射させる
    照射手段とを備えた光学デバイス。
JP3627988U 1982-10-01 1988-03-18 Pending JPS63144622U (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US43216782A 1982-10-01 1982-10-01

Publications (1)

Publication Number Publication Date
JPS63144622U true JPS63144622U (ja) 1988-09-22

Family

ID=23715030

Family Applications (2)

Application Number Title Priority Date Filing Date
JP18292983A Pending JPS5991425A (ja) 1982-10-01 1983-09-30 非線形領域として超格子を用いた光学デイバイス
JP3627988U Pending JPS63144622U (ja) 1982-10-01 1988-03-18

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP18292983A Pending JPS5991425A (ja) 1982-10-01 1983-09-30 非線形領域として超格子を用いた光学デイバイス

Country Status (3)

Country Link
JP (2) JPS5991425A (ja)
CA (1) CA1248381A (ja)
DE (1) DE3335318A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0171192A1 (en) * 1984-07-11 1986-02-12 Hitachi, Ltd. Optical bistable device
JPH0719001B2 (ja) * 1984-12-06 1995-03-06 日本電気株式会社 半導体光スイツチ
US4834511A (en) * 1985-08-06 1989-05-30 Plessey Overseas Limited Optical resonant assembly
JPH0711656B2 (ja) * 1986-02-17 1995-02-08 日本電気株式会社 光双安定素子
JPH0727148B2 (ja) * 1986-06-17 1995-03-29 アメリカン テレフォン アンド テレグラフ カムパニー 光システム
US4896931A (en) * 1988-08-18 1990-01-30 North American Philips Corp. Frequency doubling device
JP2513309B2 (ja) * 1989-04-13 1996-07-03 日本電気株式会社 半導体積層構造

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4163238A (en) * 1978-06-09 1979-07-31 The United States Of America As Represented By The Secretary Of The Army Infrared semiconductor device with superlattice region
US4208667A (en) * 1978-06-09 1980-06-17 The United States Of America As Represented By The Secretary Of The Army Controlled absorption in heterojunction structures
JPS5795690A (en) * 1980-12-05 1982-06-14 Mitsubishi Electric Corp Integrated type photo bistable element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4163238A (en) * 1978-06-09 1979-07-31 The United States Of America As Represented By The Secretary Of The Army Infrared semiconductor device with superlattice region
US4208667A (en) * 1978-06-09 1980-06-17 The United States Of America As Represented By The Secretary Of The Army Controlled absorption in heterojunction structures
JPS5795690A (en) * 1980-12-05 1982-06-14 Mitsubishi Electric Corp Integrated type photo bistable element

Also Published As

Publication number Publication date
DE3335318A1 (de) 1984-04-05
CA1248381A (en) 1989-01-10
JPS5991425A (ja) 1984-05-26

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