JPS63140072U - - Google Patents

Info

Publication number
JPS63140072U
JPS63140072U JP3065887U JP3065887U JPS63140072U JP S63140072 U JPS63140072 U JP S63140072U JP 3065887 U JP3065887 U JP 3065887U JP 3065887 U JP3065887 U JP 3065887U JP S63140072 U JPS63140072 U JP S63140072U
Authority
JP
Japan
Prior art keywords
raw material
material solution
substrate
jig
slide plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3065887U
Other languages
English (en)
Other versions
JPH0543109Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987030658U priority Critical patent/JPH0543109Y2/ja
Publication of JPS63140072U publication Critical patent/JPS63140072U/ja
Application granted granted Critical
Publication of JPH0543109Y2 publication Critical patent/JPH0543109Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Description

【図面の簡単な説明】
第1図は本考案の化合物半導体結晶成長装置の
一実施例の説明図、第2図は同じく他の実施例の
説明図、第3図はグラフアイトの層状構造を示す
説明図である。 1,6:原料溶液溜治具、2:スライド板、3
:基板、4A,4B,4C:原料溶液、5:支持
体。

Claims (1)

    【実用新案登録請求の範囲】
  1. 原料溶液を収容する原料溶液溜治具と基板を設
    置するスライド板とを備え前記原料溶液溜治具と
    前記スライド板を相対的に移動して前記原料溶液
    と前記基板とを接触させて前記基板上に化合物結
    晶薄膜をエピタキシヤル成長させる化合物半導体
    結晶成長装置において、前記原料溶液溜治具及び
    前記スライド板が、成層格子の方向が前記基板の
    移動方向と一致するグラフアイトよりなることを
    特徴とする化合物半導体結晶成長装置。
JP1987030658U 1987-03-03 1987-03-03 Expired - Lifetime JPH0543109Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987030658U JPH0543109Y2 (ja) 1987-03-03 1987-03-03

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987030658U JPH0543109Y2 (ja) 1987-03-03 1987-03-03

Publications (2)

Publication Number Publication Date
JPS63140072U true JPS63140072U (ja) 1988-09-14
JPH0543109Y2 JPH0543109Y2 (ja) 1993-10-29

Family

ID=30835673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987030658U Expired - Lifetime JPH0543109Y2 (ja) 1987-03-03 1987-03-03

Country Status (1)

Country Link
JP (1) JPH0543109Y2 (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329428A (en) * 1976-08-30 1978-03-18 Mitsubishi Electric Corp Solenoid controlled system
JPS5391921A (en) * 1977-01-24 1978-08-12 Kogyo Gijutsuin Process for making highly oriented graphite material

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329428A (en) * 1976-08-30 1978-03-18 Mitsubishi Electric Corp Solenoid controlled system
JPS5391921A (en) * 1977-01-24 1978-08-12 Kogyo Gijutsuin Process for making highly oriented graphite material

Also Published As

Publication number Publication date
JPH0543109Y2 (ja) 1993-10-29

Similar Documents

Publication Publication Date Title
EP0276961A3 (en) Solar battery and process for preparing same
FR2333567A1 (fr) Procede de croissance de couches epitaxiales lisses sur des substrats desorientes
JPS63140072U (ja)
JPS6143275U (ja) 結晶成長装置
JPH0438517Y2 (ja)
JPS63167175U (ja)
JPS63121426U (ja)
JPS60185657U (ja) 薄膜形成装置
JPS6430824U (ja)
JPS6418156U (ja)
JPS59117138U (ja) 半導体製造装置
JPS63186775U (ja)
JPH01149467U (ja)
JPS6147077U (ja) 砒化ガリウム単結晶製造装置
JPS60132470U (ja) 分子線結晶成長装置
JPH0517878Y2 (ja)
JPH01167046U (ja)
JPS62182977U (ja)
JPS61108366U (ja)
JPS62182541U (ja)
JPS63127983U (ja)
JPS6336048U (ja)
JPS62103245U (ja)
JPS6395391U (ja)
JPS59103770U (ja) 薄膜気相成長装置