JPS6265832U - - Google Patents
Info
- Publication number
- JPS6265832U JPS6265832U JP15839785U JP15839785U JPS6265832U JP S6265832 U JPS6265832 U JP S6265832U JP 15839785 U JP15839785 U JP 15839785U JP 15839785 U JP15839785 U JP 15839785U JP S6265832 U JPS6265832 U JP S6265832U
- Authority
- JP
- Japan
- Prior art keywords
- boat
- solution
- slide
- groove
- liquid phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007791 liquid phase Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第1図は本考案にかかる液相成長装置を示す図
、第2図はヘテロ接合GaAlAs成長の断面図
、第3図は従来の液相成長装置を示す図である。 図において、1はGaAs基板(成長基板)、
2はGaAlAs層、3,13はボート、4,1
4はスライド、5,15は蓋、6,16は液溜室
、10は溶液、S1,S4は移動方向に垂直なソ
ース板、S2,S3は移動方向に平行なソース板
、Uは溝、を示している。
、第2図はヘテロ接合GaAlAs成長の断面図
、第3図は従来の液相成長装置を示す図である。 図において、1はGaAs基板(成長基板)、
2はGaAlAs層、3,13はボート、4,1
4はスライド、5,15は蓋、6,16は液溜室
、10は溶液、S1,S4は移動方向に垂直なソ
ース板、S2,S3は移動方向に平行なソース板
、Uは溝、を示している。
Claims (1)
- 成長基板を保持するボートと、該ボート上を移
動し、且つ、溶液を方形の溶液溜に収容したスラ
イドから構成され、前記ボートに移動方向に平行
な溝を設けて、前記溶液とスライドとの間に介在
させたソース板を該溝に嵌め込んで移動するよう
にしたことを特徴とする液相成長装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985158397U JPH0445238Y2 (ja) | 1985-10-15 | 1985-10-15 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985158397U JPH0445238Y2 (ja) | 1985-10-15 | 1985-10-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6265832U true JPS6265832U (ja) | 1987-04-23 |
JPH0445238Y2 JPH0445238Y2 (ja) | 1992-10-23 |
Family
ID=31081846
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1985158397U Expired JPH0445238Y2 (ja) | 1985-10-15 | 1985-10-15 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0445238Y2 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5267571A (en) * | 1975-12-03 | 1977-06-04 | Hitachi Ltd | Crystallization method for semiconductor |
JPS567999A (en) * | 1979-06-28 | 1981-01-27 | Boeicho Gijutsu Kenkyu Honbuch | Method of floating up underwater linking body |
JPS56161639A (en) * | 1980-05-16 | 1981-12-12 | Fujitsu Ltd | Method of epitaxially growing in liquid phase |
JPS5756925A (en) * | 1980-09-20 | 1982-04-05 | Fujitsu Ltd | Liquid phase epitaxially growing method and device for gallium arsenide and /or aluminum gallium arsenide |
-
1985
- 1985-10-15 JP JP1985158397U patent/JPH0445238Y2/ja not_active Expired
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5267571A (en) * | 1975-12-03 | 1977-06-04 | Hitachi Ltd | Crystallization method for semiconductor |
JPS567999A (en) * | 1979-06-28 | 1981-01-27 | Boeicho Gijutsu Kenkyu Honbuch | Method of floating up underwater linking body |
JPS56161639A (en) * | 1980-05-16 | 1981-12-12 | Fujitsu Ltd | Method of epitaxially growing in liquid phase |
JPS5756925A (en) * | 1980-09-20 | 1982-04-05 | Fujitsu Ltd | Liquid phase epitaxially growing method and device for gallium arsenide and /or aluminum gallium arsenide |
Also Published As
Publication number | Publication date |
---|---|
JPH0445238Y2 (ja) | 1992-10-23 |
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