JPS6313340B2 - - Google Patents
Info
- Publication number
- JPS6313340B2 JPS6313340B2 JP56093147A JP9314781A JPS6313340B2 JP S6313340 B2 JPS6313340 B2 JP S6313340B2 JP 56093147 A JP56093147 A JP 56093147A JP 9314781 A JP9314781 A JP 9314781A JP S6313340 B2 JPS6313340 B2 JP S6313340B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- insulating film
- temperature
- vapor phase
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P14/60—
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56093147A JPS57208146A (en) | 1981-06-17 | 1981-06-17 | Forming method for insulating film to compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56093147A JPS57208146A (en) | 1981-06-17 | 1981-06-17 | Forming method for insulating film to compound semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57208146A JPS57208146A (en) | 1982-12-21 |
| JPS6313340B2 true JPS6313340B2 (show.php) | 1988-03-25 |
Family
ID=14074415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56093147A Granted JPS57208146A (en) | 1981-06-17 | 1981-06-17 | Forming method for insulating film to compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57208146A (show.php) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4560420A (en) * | 1984-06-13 | 1985-12-24 | At&T Technologies, Inc. | Method for reducing temperature variations across a semiconductor wafer during heating |
| US6594446B2 (en) | 2000-12-04 | 2003-07-15 | Vortek Industries Ltd. | Heat-treating methods and systems |
| JP2005515425A (ja) | 2001-12-26 | 2005-05-26 | ボルテック インダストリーズ リミテッド | 温度測定および熱処理方法およびシステム |
| KR20120045040A (ko) | 2002-12-20 | 2012-05-08 | 맷슨 테크날러지 캐나다 인코퍼레이티드 | 피가공물 지지 방법 |
| JP5630935B2 (ja) | 2003-12-19 | 2014-11-26 | マトソン テクノロジー、インコーポレイテッド | 工作物の熱誘起運動を抑制する機器及び装置 |
| KR101610269B1 (ko) | 2008-05-16 | 2016-04-07 | 맷슨 테크놀로지, 인크. | 워크피스 파손 방지 방법 및 장치 |
-
1981
- 1981-06-17 JP JP56093147A patent/JPS57208146A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57208146A (en) | 1982-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5433791A (en) | MBE apparatus with photo-cracker cell | |
| US6165875A (en) | Methods for modifying solid phase crystallization kinetics for A-Si films | |
| JPS6313340B2 (show.php) | ||
| US4555300A (en) | Method for producing single crystal layers on insulators | |
| US5225367A (en) | Method for manufacturing an electronic device | |
| JPS63299322A (ja) | 単結晶シリコン膜の形成方法 | |
| JP3084395B2 (ja) | 半導体薄膜の堆積方法 | |
| JP3082164B2 (ja) | レーザー処理方法及び半導体装置 | |
| JPH0345534B2 (show.php) | ||
| JPH0652714B2 (ja) | 薄膜材料の製造法 | |
| JP3208201B2 (ja) | 多結晶半導体薄膜の製造方法 | |
| GB2202236A (en) | Manufacture of electronic devices comprising cadmium mercury telluride involving vapour phase deposition | |
| JPH0491427A (ja) | 化学気相成長装置 | |
| JPH02202022A (ja) | 半導体装置の製造方法 | |
| JPS60127745A (ja) | 半導体基板 | |
| JPH0374838A (ja) | エピタキシャル成長法 | |
| Wiesmann | Method of producing hydrogenated amorphous silicon film | |
| JPS61145818A (ja) | 半導体薄膜の熱処理方法 | |
| JPS63299321A (ja) | 単結晶シリコン膜の形成方法 | |
| JPS61179523A (ja) | 単結晶薄膜形成方法 | |
| JPS59172715A (ja) | 分子線発生装置 | |
| JPH036015A (ja) | 半導体膜 | |
| JPH0480878B2 (show.php) | ||
| JPS6175517A (ja) | 化合物半導体基板のアニ−ル法 | |
| JP2002237454A (ja) | 薄膜半導体の製造方法 |