JPS63129094A - 気相エピタキシヤル成長方法 - Google Patents

気相エピタキシヤル成長方法

Info

Publication number
JPS63129094A
JPS63129094A JP26975986A JP26975986A JPS63129094A JP S63129094 A JPS63129094 A JP S63129094A JP 26975986 A JP26975986 A JP 26975986A JP 26975986 A JP26975986 A JP 26975986A JP S63129094 A JPS63129094 A JP S63129094A
Authority
JP
Japan
Prior art keywords
preheating
diffraction grating
semiconductor layer
gas
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP26975986A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0510319B2 (enExample
Inventor
Masatoshi Suzuki
正敏 鈴木
Yukitoshi Kushiro
久代　行俊
Shigeyuki Akiba
重幸 秋葉
Hideaki Tanaka
英明 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Priority to JP26975986A priority Critical patent/JPS63129094A/ja
Publication of JPS63129094A publication Critical patent/JPS63129094A/ja
Publication of JPH0510319B2 publication Critical patent/JPH0510319B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP26975986A 1986-11-14 1986-11-14 気相エピタキシヤル成長方法 Granted JPS63129094A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26975986A JPS63129094A (ja) 1986-11-14 1986-11-14 気相エピタキシヤル成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26975986A JPS63129094A (ja) 1986-11-14 1986-11-14 気相エピタキシヤル成長方法

Publications (2)

Publication Number Publication Date
JPS63129094A true JPS63129094A (ja) 1988-06-01
JPH0510319B2 JPH0510319B2 (enExample) 1993-02-09

Family

ID=17476754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26975986A Granted JPS63129094A (ja) 1986-11-14 1986-11-14 気相エピタキシヤル成長方法

Country Status (1)

Country Link
JP (1) JPS63129094A (enExample)

Also Published As

Publication number Publication date
JPH0510319B2 (enExample) 1993-02-09

Similar Documents

Publication Publication Date Title
US4116733A (en) Vapor phase growth technique of III-V compounds utilizing a preheating step
CA2170922C (en) Compound semiconductor light emitting device and method of preparing the same
JP3879173B2 (ja) 化合物半導体気相成長方法
EP1038056B1 (en) A method of growing a buffer layer using molecular beam epitaxy
US4948751A (en) Moelcular beam epitaxy for selective epitaxial growth of III - V compound semiconductor
JPH04233219A (ja) 半導体デバイスからなる製品の製造方法
JPS63129094A (ja) 気相エピタキシヤル成長方法
US7473316B1 (en) Method of growing nitrogenous semiconductor crystal materials
JP2806951B2 (ja) ストライプ型半導体レーザの製造方法
JP3101753B2 (ja) 気相成長方法
JP2641539B2 (ja) 半導体装置の製造方法
JP2641540B2 (ja) エピタキシャル結晶層形成方法及びストライプ型半導体レーザの製造方法
JPH0212814A (ja) 化合物半導体結晶成長方法
JPH0760790B2 (ja) 化合物半導体基板
JPH02178918A (ja) 化合物半導体結晶層の製造方法
JP2687862B2 (ja) 化合物半導体薄膜の形成方法
JPH02254715A (ja) 化合物半導体結晶層の製造方法
JP2819556B2 (ja) 半導体レーザの製造方法
JPS6377112A (ja) 気相成長方法
JP2766645B2 (ja) 化合物半導体薄膜結晶の成長方法
JP2880984B2 (ja) 化合物半導体基板
HgCdTe BY THE DIRECT ALLOYΥ GROWTH (DAG) PROCESS
Jorgensen et al. Production of GaAs and InP Based Heterostructures
JPS60173894A (ja) 半導体装置の製造方法
JPH02141498A (ja) ＩｎＧａＰ結晶の成長方法