JPS63125563A - Liquid resin composition and resin-sealed semiconductor device - Google Patents
Liquid resin composition and resin-sealed semiconductor deviceInfo
- Publication number
- JPS63125563A JPS63125563A JP26975286A JP26975286A JPS63125563A JP S63125563 A JPS63125563 A JP S63125563A JP 26975286 A JP26975286 A JP 26975286A JP 26975286 A JP26975286 A JP 26975286A JP S63125563 A JPS63125563 A JP S63125563A
- Authority
- JP
- Japan
- Prior art keywords
- liquid resin
- resin composition
- semiconductor device
- liquid
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 45
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 239000011342 resin composition Substances 0.000 title claims description 40
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 5
- 230000009974 thixotropic effect Effects 0.000 abstract description 6
- 229920005989 resin Polymers 0.000 abstract description 5
- 239000011347 resin Substances 0.000 abstract description 5
- 101100518501 Mus musculus Spp1 gene Proteins 0.000 abstract 2
- 101100119193 Schizosaccharomyces pombe (strain 972 / ATCC 24843) eta2 gene Proteins 0.000 abstract 2
- 239000000843 powder Substances 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 238000005187 foaming Methods 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 241000282376 Panthera tigris Species 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- 241000287828 Gallus gallus Species 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000010415 tropism Effects 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、特定の性質を有する液状樹脂組成物と、それ
を用いて封止し念薄型実装半導体装置に係り、特に被膜
外観に優れ、均一な厚さに被覆され念、高信頼性の樹脂
封止型半導体装置に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a liquid resin composition having specific properties and a thinly packaged semiconductor device sealed using the same. This invention relates to a highly reliable resin-sealed semiconductor device that is coated with a uniform thickness.
従来、半導体素子の表面を保護する液状樹脂組成物とし
ては多くの種類のものが開発されている。Conventionally, many types of liquid resin compositions have been developed for protecting the surfaces of semiconductor devices.
その中で、顔料を配合しｒｅｖゾール硬化型エポキシ系
液状樹脂組成物を、絶縁性基板の開口部にリード線を介
して接続した半導体素子の表面、及びリード線の部分に
塗布したが、漏れのない均一な厚さの被膜を形成するこ
とはできなかった。In this process, a rev sol-curable epoxy liquid resin composition containing a pigment was applied to the surface of a semiconductor element connected to an opening in an insulating substrate via a lead wire, and to the lead wire portion, but leakage occurred. It was not possible to form a film of uniform thickness without .
この液状樹脂組成物の粘度を測定したところ。The viscosity of this liquid resin composition was measured.
回転数依存性がないことが判明した。そして、これらの
樹脂封止型半導体装置を、８５℃、８５％ＲＨ下で動作
試験を２４０時間まで行つ念ところ、２０個中３個の不
良が発生して、満足な信頼性が得らねなかった。It was found that there was no rotation speed dependence. When these resin-sealed semiconductor devices were tested for up to 240 hours at 85°C and 85% RH, 3 out of 20 failed, and satisfactory reliability was not achieved. I didn't sleep.
上記従来の技術では、液状樹脂組成物の粘性（チキソト
ロピー性）の点について配慮がなされてなく、均一な厚
さで、ボイドのない被膜を形成することができないとい
う問題点がめった。In the above-mentioned conventional techniques, no consideration was given to the viscosity (thixotropy) of the liquid resin composition, and the problem was that it was rarely possible to form a void-free film with a uniform thickness.
本発明の目的は、チキントロピー性を調整した液状樹脂
組成物と、それを塗布することにより。The object of the present invention is to provide a liquid resin composition with adjusted chicken tropism, and by applying the same.
ボイドがなく、均一な厚さの被膜が半導体素子表面に形
成さハ、信頼性の向上した樹脂封止型半導体装置を提供
することにある。It is an object of the present invention to provide a resin-sealed semiconductor device with improved reliability, in which a film having a uniform thickness and no voids is formed on the surface of a semiconductor element.
本発明を概説すれば、本発明の第１の発明は液状樹脂組
成物に関する発明でろって、回転粘度計の回転数ｎ１と
ｎｌの比ｎｔ／ｎ鵞がα１の関係にあり％ｎ１及びｎｌ
の回転数で測定した粘度η１と９雪の比η１／’７１の
常用対数１．ｏｇワ１／η雪の値が。To summarize the present invention, the first invention of the present invention relates to a liquid resin composition.
The common logarithm of the viscosity η1 measured at a rotational speed of 9 snow and the ratio η1/'71 of 1. The value of ogwa 1/η snow is.
（Ｌ１１〜２．９の範囲にあることを特徴とする。(Characterized by being in the range of L11 to 2.9.
ま九本発明の第２の発明は、樹脂封止型半導体装置に関
する発明でろって、絶縁性基板の開口部にリード線を介
して接続した半導体素子表面、及びリード線間に、液状
樹脂組成物を塗布し、加熱して被覆した半導体装置にお
いて、該液状樹脂組成物として、上記第１の発明の液状
樹脂組成物を使用したことを特徴とする。A second aspect of the present invention is an invention relating to a resin-sealed semiconductor device, in which a liquid resin composition is applied to the surface of a semiconductor element connected to an opening of an insulating substrate via lead wires and between the lead wires. The semiconductor device is characterized in that the liquid resin composition of the first aspect of the invention is used as the liquid resin composition in the semiconductor device coated by coating and heating.
前記目的は、液状樹脂組成物にチキソトロピー的な性質
を付与することにより達成される。The above object is achieved by imparting thixotropic properties to the liquid resin composition.
それには、比表面積が５０〜３００ ｍ”／ｌの超微粉
末を、液状樹脂組成物に対して［Ｌ１〜１０重量僑（固
形分に対して１３〜１０重ＢＳである。For this purpose, ultrafine powder having a specific surface area of 50 to 300 m"/l is added to the liquid resin composition in an amount of 1 to 10 parts by weight (13 to 10 parts by weight based on the solid content).
念だし、液状樹脂組成物の固形分濃度は２０〜５０重量
嗟である）配合することによシ、ｌｏｇｑｓ／ｖ＊を％
（Ｌ１〜５の範囲にすることができ、液状樹脂組成物
にチキントロピー的な性質を付与することができる。Just to be sure, the solid content concentration of the liquid resin composition is 20 to 50% by weight).
(L can be set in the range of L1 to 5, and chicken-tropic properties can be imparted to the liquid resin composition.
超微粉末としては、酸化チタン、酸化アルミニウム、ケ
イ酸ジルコニウム及び酸化ケイ素などの無機質系酸化物
を用いるのが好適でろる。As the ultrafine powder, it is preferable to use inorganic oxides such as titanium oxide, aluminum oxide, zirconium silicate, and silicon oxide.
虎だし、半導体素子のメモリ素子を誤動作させるα線を
発生する金属を多く含むものは好ましくないから、α線
を発生する金属を含む恐れがなく。Since it is a tiger, it is undesirable to contain a large amount of metals that generate alpha rays, which can cause memory elements in semiconductor devices to malfunction, so there is no risk of containing metals that generate alpha rays.
しかも超微粉末化し易い酸化ケイ素の超微粉末を用いる
のが最適である。Moreover, it is optimal to use ultrafine powder of silicon oxide, which can be easily made into ultrafine powder.
しかして、酸化ケイ素の超微粉末の末端には水酸基があ
るが、この水酸基をメチル基でブロックしたものは、少
量の添加で液状樹脂組成物に対してチキソトロピー的な
性質を付与することができるので、それを使用するのが
有利である。Ultrafine silicon oxide powder has a hydroxyl group at the end, and when this hydroxyl group is blocked with a methyl group, it is possible to impart thixotropic properties to a liquid resin composition by adding a small amount. So it is advantageous to use it.
液状樹脂組成物に対してチキソトロピー的な性質を適度
に付与することにより、発泡の少ない均一な厚さの被膜
を形成させることができ、半導体素子に高信頼性を付与
することが達成される。By appropriately imparting thixotropic properties to the liquid resin composition, it is possible to form a film with a uniform thickness with little foaming, and it is possible to impart high reliability to semiconductor devices.
チキントロピー的な性質を付与し念液状樹脂組成物は、
静止に近いときの粘度が高いので、すき間から漏れるこ
とが少なく、素子の裏面にまわり込むことを防止する。The liquid-type resin composition that imparts chicken-tropic properties is
Since the viscosity is high when it is almost stationary, it is less likely to leak from gaps and prevents it from getting around to the back side of the element.
しかし、チキソトロピー的な性質を高くすると、すなわ
ち、ｌｏｇ ’７ｇ ／ ？意が３を越えると、液状組
成物が素子の表面に均一に拡がらなかったり、加熱時に
発泡するなどの問題が発生する。したがって、チキソト
ロピー的な性質を表現するｌｏｇ ηに／ η！は、（
Ｌｌｌ 〜２−９の範囲にするのがよく、α２〜２．５
が最も好ましい。However, increasing the thixotropic properties, i.e. log '7g/? If the temperature exceeds 3, problems such as the liquid composition not spreading uniformly over the surface of the element or foaming when heated occur. Therefore, to log η which expresses thixotropic properties / η! teeth,(
It is best to set it in the range of Lll ~ 2-9, α2 ~ 2.5
is most preferred.
なお１回転粘度計の回転数は通常ｃＬ５〜１００（回／
分）でらりｎｌとｎｌとして、それぞれ１と１０％２と
２０．５と５０．１０と１００（回／分）などを組合せ
ることができる。本実施例では５と５０（回／分）の組
合せを用いた。The rotational speed of a one-turn viscometer is usually cL5 to 100 (times/
1, 10%, 2, 20.5, 50.10, and 100 (times/min) can be combined as nl and nl, respectively. In this example, a combination of 5 and 50 (times/min) was used.
一般的には、チキントロピーとはゾル・ゲル変換の現象
をさすが、本発明では回転粘度計の回転数によって粘度
が異なり、その粘度変化が、ゾル・ゲル変換に類似して
いるので、チキントロピー的な性質と呼称して、用いて
いる。Generally, chickentropy refers to the phenomenon of sol-gel conversion, but in the present invention, the viscosity varies depending on the rotational speed of the rotational viscometer, and the viscosity change is similar to sol-gel conversion, so chickentropy It is called and used as a characteristic.
以下、本発明を実施例、及び対照例により更に具体的に
説明するが本発明はこれら実施例に限定されない。Hereinafter, the present invention will be explained in more detail with reference to Examples and Comparative Examples, but the present invention is not limited to these Examples.
なお第１図は、液状樹脂組成物の２５℃における粘度（
ｃＰ ％縦軸）と粘度計の回転数（ｒｐｍ、横軸）との
関係を示したグラフ、第２図は、本発明の半導体素子の
１列の断面図、第３図及び第４図は、対照例の液状樹脂
組成物を用いた半導体素子の１例の断面図でｂる。なお
第２図〜第４図において、符号７は半導体素子、８はリ
ード線、９はポリイミドのフィルム、１０け素子とリー
ド線を接続してｂる突起物でおり、１１は素子を保護し
ている被膜を意味する。In addition, Figure 1 shows the viscosity (at 25°C) of the liquid resin composition (
A graph showing the relationship between cP% (vertical axis) and the rotational speed (rpm, horizontal axis) of the viscometer, FIG. 2 is a cross-sectional view of one row of the semiconductor element of the present invention, and FIGS. 3 and 4 are , b is a cross-sectional view of an example of a semiconductor device using a liquid resin composition of a control example. In Figures 2 to 4, reference numeral 7 is a semiconductor element, 8 is a lead wire, 9 is a polyimide film, 10 is a protrusion that connects the element and the lead wire, and 11 is a protrusion that protects the element. means a coating that is
ＦＩＡｌｌ（対照９１）
フェノールノボラック硬化型エポキシｔｓｔ脂ｓｓ重量
部にメチルエチルケトン２０重量部、ジオキサン２０重
量部及びエチルセロフル１２０重１部及び硬化促進触媒
（イミダゾールのカリボール塩）を１重量部加えて、液
状樹脂組成物（１）ｔ−作製した。この液状樹脂組成物
（１）の粘度の回転数依存性を第１図の１に示す。ｌｏ
ｇη１／η！は０である。FIAll (Control 91) 20 parts by weight of methyl ethyl ketone, 20 parts by weight of dioxane, 1 part by weight of 120 parts by weight of ethyl cellofur, and 1 part by weight of a curing accelerating catalyst (Calibol salt of imidazole) were added to parts by weight of phenol novolak curable epoxy TST resin to form a liquid resin. Composition (1) was prepared. The rotation speed dependence of the viscosity of this liquid resin composition (1) is shown in 1 in FIG. lo
gη1/η! is 0.
すなわち、回転数依存性はない。That is, there is no rotation speed dependence.
勿］２〜８
液状樹脂組成物（１）に、比表面積が８０ ＩＷ” ／
ｆの設合ケイ素の超微粉末（粉末表面の水酸基をメチ
ル基でブロックしている）を固形分に対して２．３．５
．７，８．９．１０１ｉ量係になるように配合した液状
樹脂組成物（２〜８）′ｆ：作製した。これら組成物（
２〜６）の粘度の回転数依存性を第１図２〜６に示す。Of course] 2 to 8 The liquid resin composition (1) has a specific surface area of 80 IW"/
f ultrafine powder of incorporated silicon (the hydroxyl groups on the powder surface are blocked with methyl groups) at a ratio of 2.3.5 to the solid content
．． 7,8.9.101i Liquid resin compositions (2 to 8)'f: Prepared. These compositions (
The rotation speed dependence of the viscosity of Nos. 2 to 6) is shown in FIG. 1, 2 to 6.
これら組成物（２〜６）のｌｏｇ ｑｔ ／ ｙｙｚは
１１〜１の範囲にらる。The log qt/yyz of these compositions (2-6) ranges from 11-1.
厚さ５０μｍのポリイミドテープ（ｌ鴫５５■）の中央
部に＆６閣角の穴がらり、この穴の周辺（４辺）にリー
ド線が等間隔に１００本固定されており、このリード線
に６鱈角の半導体素子をバンプを介して熱圧着し念。こ
の素子の表面て、１〜８の液状樹脂組成物を塗布した後
に加熱（１２５Ｃ，４時間）した。被覆し念素子の断面
を第２図〜第４図に示す。A 50 μm thick polyimide tape (55 cm) has a hole in the center with a square hole, and 100 lead wires are fixed at equal intervals around the hole (4 sides). A semiconductor element made of cod horn is bonded by thermocompression via a bump. After coating the liquid resin compositions 1 to 8 on the surface of this element, it was heated (125C, 4 hours). Cross-sections of the coated optical elements are shown in FIGS. 2-4.
液状樹脂組成物（１及び２）を被覆し念素子の断面は第
３図に示し念ように、素子の裏面に液状樹脂組成物がま
わシ込み、素子表面の被膜が極端に薄くなっている。そ
のため、８５℃、８５優ＲＨの高温高湿度雰囲気下に、
２０個の実装品全放置したところ、２４０時間後に２個
の不良が発生した。液状樹脂組成物（１及び２）の粘度
の比１０ｇηＩ／η冨はそれぞれ０、α１であった。こ
のことがらα１以下では、よい塗膜性が得られないと言
える。（対照例）
液状樹脂組成物（３〜７）を被覆した素子の断面は第２
図に示したように、素子及びリード線の周囲に均一な膜
で付着しており、８５Ｃ１８５優′ＲＥ下に２４０時間
放置しても不良は発生しなかった。The cross section of the device coated with the liquid resin compositions (1 and 2) is shown in Figure 3, and as you can see, the liquid resin composition penetrates into the back side of the device, making the film on the surface of the device extremely thin. . Therefore, under a high temperature and high humidity atmosphere of 85℃ and 85% RH,
When all 20 mounted products were left unattended, two defects occurred after 240 hours. The viscosity ratio of the liquid resin compositions (1 and 2), 10 gηI/η, was 0 and α1, respectively. From this fact, it can be said that good coating properties cannot be obtained if α1 or less. (Comparative example) The cross section of the element coated with the liquid resin compositions (3 to 7) is
As shown in the figure, a uniform film was adhered around the element and lead wires, and no defects occurred even after being left under 85C185 EX'RE for 240 hours.
これらの液状樹脂組成物（３〜６）の１０ｇη１／む
は１２〜１の範囲でらった。液状樹脂組成物（７）ノ１
ｏｇ ｖｔ／＋ｙｔ ＦｉＺ５でｂつ虎。このことから
、ｒＬ２〜ｚ５の範囲にろれば、均一な厚さの塗膜を形
成できることが明らかでるる。（実施例）液状樹脂組成
物（８）ｆ！：被覆し念素子の断面は第４図に示したよ
うに、発泡の跡が見られ念。この組成物のｌｏｇガ／？
ｘｌｉｓでｂつな。８５℃。10gη1/m of these liquid resin compositions (3 to 6)
was received in the range of 12 to 1. Liquid resin composition (7) No. 1
og vt/+yt B tiger in FiZ5. From this, it is clear that a coating film with a uniform thickness can be formed if the ratio is within the range of rL2 to z5. (Example) Liquid resin composition (8) f! : As shown in Figure 4, the cross section of the coated optical element shows traces of foaming. log of this composition?
xlis is b. 85℃.
８５％ＲＥでの試験では２４０時間後に２０個中３個の
不良が発生した。（対照例）
これらの検討結果から、ｌｏｇη１／＋７意が［Ｌ２〜
２．５の範囲に６れば、均一な厚さの膜を形成でき、素
子の信頼性を保持できることが明らかである。In the test at 85% RE, 3 out of 20 failed after 240 hours. (Comparative example) From these study results, log η1/+7 is [L2~
It is clear that when 6 is within the range of 2.5, a film with a uniform thickness can be formed and the reliability of the device can be maintained.
これは、３〜９重量憾の超微粉末１ｉ：添加すればよい
ことを意味している。This means that it is sufficient to add 3 to 9 parts of ultrafine powder 1i by weight.
例９〜１６
例１〜８で用いた比表面積８０１Ｈ”／ｆの超微粉末０
代りに比表面積２００ ｍ”／ ｆの超微粉末（酸化ケ
イ素、粉末の表面は水酸基になっている）を用いた以外
は、例１〜８と同じ操作を行い、０．２．３．５．７．
８．９．１００重量部超微粉末を配合し念液状樹脂組成
物（９〜１６）を得た。Examples 9-16 Ultrafine powder with a specific surface area of 801H"/f used in Examples 1-8
The same operations as in Examples 1 to 8 were performed except that an ultrafine powder (silicon oxide, the surface of the powder has hydroxyl groups) with a specific surface area of 200 m"/f was used instead, and 0.2.3.5 .7.
8.9. 100 parts by weight of ultrafine powder was blended to obtain liquid-strength resin compositions (9 to 16).
これらの液状樹脂組成物のｌｏｇガ／ガは、それぞれ０
，１口５．（Ｌｌ、（Ｌ２、ＩＷ３、α６．１．０．２
．３であった。したがって、固形分に対して５〜１０重
量係配合すると１０ｇη１ ／ １１意は（Ｌ２〜２．
３の範囲に入ることになる。液状樹脂組成物（１２〜１
’６ ） ’に被覆した素子ｔ−８５℃、８５％ＲＨ
下に２４０時間放置し虎が不良は発生しなかった。The log g/g of these liquid resin compositions is 0, respectively.
, 1 mouthful 5. (Ll, (L2, IW3, α6.1.0.2
．． It was 3. Therefore, if 5 to 10 weight ratios are added to the solid content, 10gη1/11 will be (L2 to 2.
It will be in the range of 3. Liquid resin composition (12-1
'6) 'T-85℃, 85%RH
I left it for 240 hours and no defects occurred.
（実施例）しかし、液状樹脂組成物（９〜１１）を被覆
した素子では、２０個中３個の不良が発生し念。（対照
例）
〔発明の効果〕
本発明によれば、絶縁性基板の開口部にリード線を介し
て接続した半導体素子の表面、及びリード線間に均一な
厚さの膜を被覆することができるので、高温高湿試験に
長時間放置しても不良品が発生しないなど、信頼性を向
上することができる効果がるる。(Example) However, in the devices coated with the liquid resin compositions (9 to 11), 3 out of 20 defects occurred. (Comparative Example) [Effects of the Invention] According to the present invention, it is possible to coat the surface of a semiconductor element connected to an opening of an insulating substrate via lead wires and between the lead wires with a film having a uniform thickness. This has the effect of improving reliability, such as no defective products even if left in high temperature and high humidity tests for long periods of time.
第１図は液状樹脂組成物の２５℃における粘度と粘度計
の回転数との関係を示したグラフ、第２図は本発明の半
導体素子の１例の断面図、第３図及び第４図は対照の液
状樹脂組成物を用い念半導体素子の１例の断面図である
。FIG. 1 is a graph showing the relationship between the viscosity of a liquid resin composition at 25° C. and the rotational speed of a viscometer, FIG. 2 is a cross-sectional view of an example of a semiconductor element of the present invention, and FIGS. 3 and 4 1 is a cross-sectional view of an example of a semiconductor device using a control liquid resin composition.
Claims (1)
＿２が０．１の関係にあり、ｎ＿１及びｎ＿２の回転数
で測定した粘度η＿１とη＿２の比η＿１／η＿２の常
用対数ｌｏｇη＿１／η＿２の値が、０．１１〜２．９
の範囲にあることを特徴とする液状樹脂組成物。 ２、絶縁性基板の開口部にリード線を介して接続した半
導体素子表面、及びリード線間に、液状樹脂組成物を塗
布し、加熱して被覆した半導体装置において、該液状樹
脂組成物として、回転粘度計の回転数ｎ＿１とｎ＿２の
比ｎ＿１／ｎ＿２が０．１の関係にあり、ｎ＿１及びｎ
＿２の回転数で測定した粘度η＿１とη＿２の比η＿１
／η＿２の常用対数ｌｏｇη＿１／η＿２の値が、０．
１１〜２．９の範囲にある液状組成物を使用したことを
特徴とする樹脂封止型半導体装置。 ３、該常用対数の値が、０．２〜２．５の範囲にある特
許請求の範囲第２項記載の樹脂封止型半導体装置。[Claims] 1. Ratio n_1/n of rotational speed n_1 and n_2 of the rotational viscometer
_2 has a relationship of 0.1, and the value of the common logarithm log η_1/η_2 of the ratio η_1/η_2 of the viscosity η_1 and η_2 measured at the rotational speed of n_1 and n_2 is 0.11 to 2.9.
A liquid resin composition characterized by being in the range of. 2. In a semiconductor device in which a liquid resin composition is coated on the surface of a semiconductor element connected to an opening of an insulating substrate via a lead wire and between the lead wires and coated by heating, as the liquid resin composition, The ratio n_1/n_2 of the rotational speed n_1 and n_2 of the rotational viscometer is 0.1, and n_1 and n
Ratio η_1 of viscosity η_1 and η_2 measured at a rotation speed of _2
/η_2 when the value of the common logarithm logη_1/η_2 is 0.
A resin-sealed semiconductor device characterized in that a liquid composition having a molecular weight of 11 to 2.9 is used. 3. The resin-sealed semiconductor device according to claim 2, wherein the value of the common logarithm is in the range of 0.2 to 2.5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61269752A JP2543686B2 (en) | 1986-11-14 | 1986-11-14 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61269752A JP2543686B2 (en) | 1986-11-14 | 1986-11-14 | Resin-sealed semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63125563A true JPS63125563A (en) | 1988-05-28 |
| JP2543686B2 JP2543686B2 (en) | 1996-10-16 |
Family
ID=17476660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61269752A Expired - Fee Related JP2543686B2 (en) | 1986-11-14 | 1986-11-14 | Resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2543686B2 (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5230184A (en) * | 1975-09-02 | 1977-03-07 | Sharp Corp | Semiconductor device |
| JPS5561042A (en) * | 1978-10-31 | 1980-05-08 | Fujitsu Ltd | Electron element packaging resin material |
| JPS5950548A (en) * | 1982-09-16 | 1984-03-23 | Mitsubishi Electric Corp | Resin sealed structure of electronic component |
| JPS59161053A (en) * | 1983-03-03 | 1984-09-11 | Matsushita Electric Ind Co Ltd | Mounting substrate |
| JPS60168767A (en) * | 1983-11-14 | 1985-09-02 | ダウ コ−ニング コ−ポレ−シヨン | Curable liquid paint composition |
| JPS635644U (en) * | 1986-06-26 | 1988-01-14 |
-
1986
- 1986-11-14 JP JP61269752A patent/JP2543686B2/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5230184A (en) * | 1975-09-02 | 1977-03-07 | Sharp Corp | Semiconductor device |
| JPS5561042A (en) * | 1978-10-31 | 1980-05-08 | Fujitsu Ltd | Electron element packaging resin material |
| JPS5950548A (en) * | 1982-09-16 | 1984-03-23 | Mitsubishi Electric Corp | Resin sealed structure of electronic component |
| JPS59161053A (en) * | 1983-03-03 | 1984-09-11 | Matsushita Electric Ind Co Ltd | Mounting substrate |
| JPS60168767A (en) * | 1983-11-14 | 1985-09-02 | ダウ コ−ニング コ−ポレ−シヨン | Curable liquid paint composition |
| JPS635644U (en) * | 1986-06-26 | 1988-01-14 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2543686B2 (en) | 1996-10-16 |
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