DE2619433A1 - Semiconductor element or integrated circuit bonded to base - has coating protecting system from outgassing of adhesive - Google Patents

Semiconductor element or integrated circuit bonded to base - has coating protecting system from outgassing of adhesive

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Publication number
DE2619433A1
DE2619433A1 DE19762619433 DE2619433A DE2619433A1 DE 2619433 A1 DE2619433 A1 DE 2619433A1 DE 19762619433 DE19762619433 DE 19762619433 DE 2619433 A DE2619433 A DE 2619433A DE 2619433 A1 DE2619433 A1 DE 2619433A1
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Germany
Prior art keywords
adhesive
electrical component
carrier
component according
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19762619433
Other languages
German (de)
Inventor
Gerfried Dipl Phys Felkel
Guenter Ing Grad Waitl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
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Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19762619433 priority Critical patent/DE2619433A1/en
Publication of DE2619433A1 publication Critical patent/DE2619433A1/en
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/045—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4827—Materials
    • H01L23/4828—Conductive organic material or pastes, e.g. conductive adhesives, inks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor

Abstract

Title workpiece has a sytem applied to a substrate with an adhesive (I) and both the system and (part of) the substrate are given a coating (II) preventing access of harmful gases evolved by (I). (II) pref. consists of plastics, esp. a casting resin. (II) is soft and elastic. The coated system is incorporated in a hermetically sealed metal and/or glass capsule. (I) is based on an epoxide or polymide resin. (II) eliminated the difficulties caused by outgassing of (I).

Description

Elektrisches BauelementElectrical component

Die Erfindung betrifft ein elektrisches Bauelement, insbesondere ein Halbleiterbauelement oder eine integrierte Schaltung.The invention relates to an electrical component, in particular a Semiconductor device or an integrated circuit.

Bei der Herstellung von elektrischen Bauelementen, insbesondere bei der Montage von Systemen auf Trägern besteht zunehmendes Interesse daran, das bisher übliche Auflegieren durch Aufkleben zu ersetzen.In the manufacture of electrical components, especially in the assembly of systems on carriers there is increasing interest in this, so far to replace the usual alloying with gluing.

Unter dem Begriff System werden bei der vorliegenden Erfindung fast fertige elektrische Bauelemente verstanden, zu deren Fertigstellung eine Montage derselben auf Trägern sowie der Anschluß von Kontaktdrähten an bereits vorhandenen Xontaktflecken und die Einkapselung derselben in Gehause zu erfolgen hat. Systeme sind also beispielsweise Halbleiterchips, die vielfache und unterschiedliche elektrische Funktionen ausüben können.The term system in the present invention is almost Completed electrical components understood, to complete an assembly same on carriers as well as the connection of contact wires to existing ones Contact patches and their encapsulation in the housing must be carried out. Systems are for example semiconductor chips that are multiple and different electrical Can perform functions.

Kleber und insbesondere organische Kleber gasen im allgemeInen während und nach dem Aushärten aus. Die dadurch entstandenen Gase haben oft nachteilige Folgen für das aufgeklebte System, insbesondere für Halbleiterchips. Es hat sich gezeigt, daß de gleichzeitige Anwendung erhöhter Temperatur und hoher Feuchtigkeit bei kunstetoffumpreßten integrierten Schaltungen zur Abspaltung von Flußsäure aus gewissen Klebern, z. B. aus Epoxidharzklebern, führt, die ihrerseits Korrosion vorhandener Äluminlumleitbahnen und somit die Zerstörung des Halbleiterbauelements zur Folge hat. Weiterhin wird bei hermetisch dicht gekapselten Siliciumtransistoren oder Dioden, die- mittels leitfähiger Kleber auf Bodenplatten aufgebracht #sind und die eine gewisse Zeit bei einer Temperatur von 125 OG gelagert wurden, eine starke Sperrstromerhöhung beobachtet, die die Grenzen des zulässigen Sperrstromes der jeweiligen Bauelemente übersteigt und das Bauelement somit unbrauchbar macht.Adhesives, and especially organic adhesives, generally gas during and after hardening. The resulting gases often have detrimental effects Consequences for the affixed system, especially for Semiconductor chips. It has been shown that the simultaneous use of elevated temperature and high Moisture in plastic-pressed integrated circuits to split off Hydrofluoric acid from certain adhesives, e.g. B. from epoxy resin adhesives, which in turn leads Corrosion of existing aluminum bypass paths and thus the destruction of the semiconductor component has the consequence. Furthermore, in hermetically sealed silicon transistors or diodes that are attached to floor panels using conductive adhesive and which have been stored for a certain time at a temperature of 125 OG, one strong increase in reverse current observed, which is the limits of the permissible reverse current of the respective components and thus makes the component unusable.

Das Ausgasen der Kleber macht somit deren Verwendung zur Montage von~ Systemen auf Trägern problematisch, wenn nicht sogar unbrauchbar.The outgassing of the adhesive thus makes it used for the assembly of ~ Systems on carriers problematic, if not unusable.

Aufgabe der vorliegenden Erfindung ist es deshalb, ein elektrisches Bauelement anzugeben, bei dem bei einer Klebemontage Mittel vorgesehen sind, die das aufgeklebte System vor den Gasen schützen, die dem Kleber entweichen.The object of the present invention is therefore to provide an electrical Specify component in which means are provided for adhesive mounting that protect the bonded system from the gases that escape the adhesive.

Diese Aufgabe wird erfindungsgemäß dadurch gelöst, daß ein System mittels eines Klebers auf einem Träger aufgebracht ist und daß das System sowie der Träger oder Teile des Trägers mit einem Überzug so versehen sind, daß ein für das System schädlicher Zutritt von Gasen, die dem Kleber entweichen, vermieden wird.This object is achieved according to the invention in that a system is applied by means of an adhesive on a carrier and that the system as well the carrier or parts of the carrier are provided with a coating so that a for the system avoids harmful ingress of gases escaping from the adhesive.

Es ist vorteilhaft, daß der Überzug aus Kunststoff, insbesondere aus einem Gießharz besteht.It is advantageous that the coating is made of plastic, in particular from consists of a casting resin.

Die Verwendung von Kunststoffen hat sich wegen der leichten und angenehmen Verarbeitbarkeit derselben als besonders vorteilhaft erwiesen. Zur Herstellung dichter erfindungsgemäßer Überzüge eignen sich Gießharze besonders gut.The use of plastics has grown because of its lightness and comfort Processability of the same proved to be particularly advantageous. To make denser Casting resins are particularly suitable for coatings according to the invention.

Es ist auch vorteilhaft, daß der Überzug weich und elastisch ist.It is also advantageous that the cover is soft and elastic.

Die Weichheit und Elastizität des Überzugs ist im Hinblick auf seine Bruch- und Rißfestigkeit äußerst wichtig, weil durch auftretende Risse ein aus dem verwendeten Kleber austretendes Gas die zu schlitzen~ de Systemoberfläche erreicht, was durch den erfindungsgemäßen Überzug vermieden werden soll. Da der lager- und Arbeitsbereich für Halbleiter von minus 55°Cvon bis plus 125°C reicht, treten bei den verschiedenen aneinander grenzenden Materialien thermisch verursachte mechanische Spannungen auf, weshalb eine gewisse Weichheit und Elastizität des Überzugs innerhalb dieses Temperaturbereichs von besonderer Wichtigkeit ist.The softness and elasticity of the cover is important in terms of its Resistance to breakage and cracking is extremely important, because cracks cause one out of the used glue leaking gas to slit the ~ de system interface achieved what is to be avoided by the coating according to the invention. Since the Storage and working area for semiconductors ranges from minus 55 ° C from to plus 125 ° C, occur with the different adjoining materials thermally caused mechanical tensions, which is why a certain softness and elasticity of the coating is of particular importance within this temperature range.

Eine Weiterbildung der Erfindung besteht in reflexionsmindernden Überzügen bei optoelektronischen Halbleiterbauelementen. Diese Maßnahme wirkt sich besonders vorteilhaft bei Fotodioden aus, da diese Maßnahme zu einer Erhöhung des Quantenwirkungsgrades des Bauelements führt.A further development of the invention consists in anti-reflective coatings in optoelectronic semiconductor components. This measure affects particularly advantageous for photodiodes, since this measure leads to an increase in the quantum efficiency of the component leads.

Oftmals ist es vorteilhaft, daß das mit einem Überzug versehene System in eine hermetisch dichte Gehäusekapsel eingebaut ist. Diese Maßnahme schützt das Bauelement vor verschiedenen äußeren Einflüssen, verhindert aber zugleich das Entweichen der aus dem Kleber ausgasenden Substanzen. Für derartige Bauelemente ist der erfindungsgemäße Überzug von besonderer Bedeutung.It is often advantageous that the coated system is built into a hermetically sealed housing capsule. This measure protects that Component from various external influences, but at the same time prevents escape the substances emitted from the adhesive. For such components is the inventive Coating of particular importance.

Weiterhin ist es vorteilhaft, daß die Gehäusekapsel aus Metall und/ oder Glas besteht.Furthermore, it is advantageous that the housing capsule made of metal and / or glass.

Es ist auch vorteilhaft, daß zum Aufkleben des Systems auf den Träger ein Kleber auf Epoxidharz- oder Polyimidharz-Basis Verwendung findet.It is also advantageous for the system to be glued to the carrier an adhesive based on epoxy resin or polyimide resin is used.

Die Verwendung von Klebern auf Epoxidharz- oder auf Polyimidharz-Basis hat sich wegen ihrer guten mechanischen, thermischen und elektrischen Eigenschaften als besonders geeignet erwiesen.The use of epoxy resin or polyimide resin based adhesives has proven itself because of its good mechanical, thermal and electrical properties proved to be particularly suitable.

Eine Weiterbildung der Erfindung besteht darin, daß zum Aufkleben des Systems auf den Träger ein elektrisch isolierender Kleber Verwendung findet.A further development of the invention consists in that for gluing of the system an electrically insulating adhesive is used on the carrier.

Ein derartiger Klebe wird bei allen verklebten Systemen angewendet, die keine Rückseitenkontaktierung aufweisen und vom Träger elektrisch isoliert sein sollen.Such an adhesive is used in all glued systems, which have no rear contact and are electrically isolated from the carrier should.

Weiterhin ist es erfinderisch, daß zum Aufkleben des Systems auf den Träger ein elektrisch leitender Kleber Verwendung findet.Furthermore, it is inventive that for gluing the system on the Carrier an electrically conductive adhesive is used.

Bei allen Systemen mit rückseitiger Kontaktierung findet ein elektrisch leitender Kleber Anwendung.In all systems with rear contact, there is an electrical conductive glue application.

Eine Weiterbildung der Erfindung besteht darin, daß zum Aufkleben des Systems auf den Träger ein gut wärmeleitender Kleber Verwendung findet.A further development of the invention consists in that for gluing The system uses a highly thermally conductive adhesive on the carrier.

Das Problem der Ws'#.rmeableitung vom Halbleiter wird in der Regel über größere ILühlflächen, insbesondere über Träger, gelöst. In einer Vielzahl von Fällen ist deshalb eine gute Wärmeleitfähigkeit des verwendeten Klebers unerläßlich, damit ein möglichst guter Wärmeaustausch zwischen System und Träger stattfinden kann.The problem of heat dissipation from the semiconductor usually becomes solved over larger cooling surfaces, in particular over carriers. In a variety of In some cases, it is therefore essential that the adhesive used has good thermal conductivity, so that the best possible heat exchange takes place between the system and the carrier can.

Die Verwendung von Klebetechniken anstelle der bisher üblichen legiertechniken beim Aufbringen von insbesondere Halbleitersystemen auf Träger hat sich wegen der guten Elastizität und Weichheit der Kleberschichten gegenüber den bei der Begiertechnik erzeugten Begierungsschichten als besonders vorteilhaft erwiesen. Eine weiche elastische Kleberzwischenschicht zwischen einem Träger und einem darauf befestigten System puffert mechanische Spannungen in großem Maße ab, so daß ein mittels Klebetechnik hergestelltes Bauelement in hohem Maße gegen mechanische Spannungen unempfindlich ist, die bei Halbleiterbauelementen sehr häufig durch Temperaturschwankungen hervorgerufen werden.The use of gluing techniques instead of the alloying techniques that have been customary up to now when applying semiconductor systems in particular to carrier has because of the good elasticity and softness of the adhesive layers compared to those used in the desire technique generated coating layers proved to be particularly advantageous. A soft elastic Adhesive intermediate layer between a carrier and a system attached to it buffers mechanical tensions to a large extent, so that one by means of adhesive technology Manufactured component highly insensitive to mechanical stresses which in semiconductor components is very often caused by temperature fluctuations will.

Nachfolgend wird die Erfindung an Hand der Zeichnung und an einem Ausführungsbeispiel näher erläutert: Die Figur stellt einen Querschnitt durch eine Fotodiode 1 dar. Auf einer Bodenplatte 2 befindet sich eine Kleberschicht 4 zur Montage eines Halbleiterchips 3 auf der Bodenplatte 2. Der Halbleiterchip 3 und Teile der Bodenplatte 2 werden durch einen Überzug 5 abgedeckt.The invention is based on the drawing and on a Embodiment explained in more detail: The figure shows a cross section through a Photodiode 1. On a base plate 2 there is an adhesive layer 4 for Mounting a semiconductor chip 3 on the base plate 2. The semiconductor chip 3 and Parts of the base plate 2 are covered by a cover 5.

Ein äußerer Anschlußdraht 9 ist mit einer isolierten Durchführung 11 durch die Bodenplatte 2 hindurch ins Innere einer Gehäusekappe 6 geleitet. Ein Kontaktdraht 10 verbindet den äußeren Anschlußdraht 9 mit; einem Obersettenkontakt 12 des Xalbleiterokips 3. Ein rilckseitieer Kontakt 15 des llalbleiterchips 3 ist über die elektrisch leitende Kleberschicht 4 und die Bodenplatte 2 leitend mit einem äußeren Anschlußdraht 8 verbunden. Auf die Bodenplatte 2 ist eine mit einem Glasfenstor 7 versehene metallischc Gehäusekappe 6 hermetisch dicht aufgesetzt.An outer connecting wire 9 is with an insulated bushing 11 passed through the base plate 2 into the interior of a housing cap 6. A Contact wire 10 connects the outer connecting wire 9 with; a top contact 12 of the Xalbleiterokip 3. A backside Contact 15 of the semiconductor chip 3 is conductive via the electrically conductive adhesive layer 4 and the base plate 2 connected to an external connecting wire 8. On the bottom plate 2 is one with a metallic housing cap 6 provided with a glass window door 7 is hermetically sealed.

Bei einer erfindungsgemäßen Fotodiode ist z. B. ein Siliciumchip auf eine Eisenbodenplatte mittels eines elektrisch leitenden organischen Klebers auf Epoxidharz- oder Polyimidhar-Basis aufgeklebt.In a photodiode according to the invention, for. B. a silicon chip an iron base plate by means of an electrically conductive organic adhesive Epoxy resin or polyimide resin base glued on.

Von einem Kontaktfleck der Siliciumoberfläche führt ein Kontakt draht zu einem äußeren Anschlußdraht, der isoliert durch die Bodenplatte hindurchgeführt ist. Der Siliciumchip und Teile der Bodenplatte sind mittels eines Überzugs aus Gießharz, das in flüssiger Form aufgebracht und anschließend ausgehärtet wird, abgedeckt. Auf dem Siliciumchip wirkt der aufgebrachte Überzug als reflexionsmindernde Schicht, die zu einem erhöhten Quantenwirkungsgrad des Bauelements führt. Eine mit einem Glasfenster versehene metallische Gehäusekappe ist auf die Bodenplatte gesetzt und schließt den Halbleiterchip hermetisch dicht ab. Bei der Montage von Siliciumchips auf Eisenträgern puffert eine Kleberzwischenschicht die mechanischen Spannungen, die sich zwischen Silicium und Eisen bei einem Lager- und Arbeitsbereich von minus 55°Cund bis plus 125°C ergeben, wesentlich besser ab, als eine Begierungszwischenschicht.A contact wire leads from a contact pad on the silicon surface to an external connecting wire, which is passed through the base plate in an insulated manner is. The silicon chip and parts of the base plate are made of a coating Cast resin, which is applied in liquid form and then cured, covered. The applied coating acts as a reflection-reducing layer on the silicon chip, which leads to an increased quantum efficiency of the component. One with one A metal housing cap with a glass window is placed on the base plate and hermetically seals the semiconductor chip. When assembling silicon chips An intermediate adhesive layer on iron supports buffers the mechanical stresses, between silicon and iron with a storage and working range of minus 55 ° C and up to plus 125 ° C result much better than an intermediate layer.

Im Falle der beschriebenen Fotodiode, in welchem eine Kontaktierung zwischen System und Träger erwünscht ist, weisen die dazu verwendeten Kleber eine entsprechende elektrische Leitfähigkeit auf. Häufig ist auch das Problem der Wärmeableitung vom System nach außen zu bewältigen. Entsprechend eingesetzte Kleber weisen eine hinreichende.In the case of the photodiode described, in which a contact between the system and the carrier is desired, the adhesives used for this have a corresponding electrical conductivity. The problem of heat dissipation is also common from the system to the outside world. Correspondingly used adhesives have a sufficient.

Wärmeleitfähigkeit auf.Thermal conductivity.

Gelegentlich sollen Systeme auch elektrisch isoliert auf einem Träger aufgebracht werden. Die dazu verwendeten Kleber sind hinreichend elektrisch isolierend ausgestattet.Occasionally, systems should also be electrically isolated on a carrier be applied. The adhesives used for this are sufficiently electrically insulating fitted.

Die Klebemontage eignet sich besonders dazu, relativ große Chips, z. B. 3 x 3 qmm Siliciumchips auf thermisch nicht besonders gut angepaßte Träger, z. B. Eisenbodenplatten, aufzubringen. Die Verwendung thermisch nicht gut angepaBtev Bisezbodenplatten anstelle von thermisch gut angepaßten, z. B. Vacon-Bodenplatten zur Montage von Siliciumchips, ist aus Gründen einer Kostenersparnis häufig erwünscht.The adhesive assembly is particularly suitable for relatively large chips, z. B. 3 x 3 sqmm silicon chips on carriers that are not particularly well-adapted thermally, z. B. iron floor panels to apply. The use is not thermally well adapted Bisez floor panels instead of thermally well-matched, e.g. B. Vacon floor panels for mounting silicon chips, is often desirable for reasons of cost savings.

Das erfindungsgemäße elektrische Bauelement beschränkt sich keinesfalls auf das vorstehend beschriebene Ausführungsbeispiel. In ans loger Weise können vielmehr beliebige andere Halbleiterbauelemente aufgebaut sein sowie integrierte Schaltungen oder auch passive Bauelemente, wie Kondensatoren oder Widerstände.The electrical component according to the invention is in no way restricted to the embodiment described above. Rather, in an ans logically way any other semiconductor components can be constructed as well as integrated circuits or passive components such as capacitors or resistors.

10 Patentansprüche 1 Figur10 claims 1 figure

Claims (10)

P a t e n t a n s p r ü c h e e 1. Elektrisches Bauelement, insbesondere Halbleiterbauelement oder integrierte Schaltung, d a d u r c h g e k e n n -z e i c h n e t, daß ein System mittels eines Klebers auf einem Träger aufgebracht ist und daß das System sowie der Träger oder Teile des Trägers mit einem Überzug so versehen sind, daß ein für das System schädlicher Zutritt von Gasen, die dem Kleber ent weichen, vermieden wird.P a t e n t a n s p r ü c h e e 1. Electrical component, in particular Semiconductor component or integrated circuit, d a d u r c h e k e n n -z e i c h n e t that a system is applied to a carrier by means of an adhesive and that the system and the carrier or parts of the carrier with a coating so are provided that a harmful for the system access of gases that the adhesive escape, is avoided. 2. Elektrisches Bauelement nach Anspruch 1, d a d u r c h g e -k e n n z e i c h n e t, daß der Überzug aus Kunststoff, insbesondere aus einem Gießharz, besteht. 2. Electrical component according to claim 1, d a d u r c h g e -k It is noted that the coating made of plastic, in particular made of a casting resin, consists. 3. Elektrisches Bauelement nach Anspruch 1 oder 2, d a d u r c h g e k e n n z e i c h n e t, daß der Überzug weich und elastisch ist. 3. Electrical component according to claim 1 or 2, d a d u r c h it is not noted that the cover is soft and resilient. 4. Elektrisches Bauelement-in Form eines optoelektronischen Halbleiterbauelements nach einem der Ansprüche 1 bis 3, g e k e n ns e i c h n e t d u r c h einen reflexionsmindernden Überzug. 4. Electrical component - in the form of an optoelectronic semiconductor component according to one of claims 1 to 3, g e k e n ns e i c h n e t d u r c h a reflection-reducing Coating. 5. Elektrisches Bauelement nach einem der Ansprüche 1 bis 4, d a -d u r c h g e k e n n z e i c h n e t, daß das mit einem Überzug versehene System in eine hermetisch dichte Gehäusekapsel eingebaut ist. 5. Electrical component according to one of claims 1 to 4, d a - it is not indicated that the coated system is built into a hermetically sealed housing capsule. 6. Elektrisches Bauelement nach Anspruch 5, d a d u r c h g e -k e n n z e i c h n e t, daß die Gehäusekapsel aus Metall und/ oder Glas besteht. 6. Electrical component according to claim 5, d a d u r c h g e -k It is noted that the housing capsule is made of metal and / or glass. 7. Elektrisches Bauelement nach einem der Ansprüche 1 bis 6, d ad u r c h g e k e n n z e i c h n e t, daß zum Aufkleben des Systems auf den Träger ein Kleber auf Epoxidharz- oder Polyimidharz-3asis Verwendung findet. 7. Electrical component according to one of claims 1 to 6, d ad u r c h e k e k e nn n z e i n e t that for gluing the system onto the carrier an adhesive based on epoxy resin or polyimide resin is used. 8 Elektrisches Bauelement nach einem der Ansprüche 1 bis 7, d ad u r c h g e k e n n z e i c h n e t, daß zum Aufkleben des Systems auf den Träger ein elektrisch isolierender Kleber Vcrwendung findet.8 Electrical component according to one of claims 1 to 7, d ad u notices that the system is glued to the carrier an electrically insulating adhesive is used. 9. Elektrisches Bauelement nach einem der Ansprüche 1 bis 7, d ad u r c h g e k e n n z e i c h n e t, daß zum Aufkleben des Systems auf den Träger ein elektrisch leitender Kleber Verwrendung findet.9. Electrical component according to one of claims 1 to 7, d ad u r c h e k e k e nn n z e i n e t that for gluing the system onto the carrier an electrically conductive adhesive is used. 10. Elektrisches Bauelement nach einem der Ansprüche 1 bis 9, d a -d u r c h g e k e n n z e i c h n e t, daß zum Aufkleben des Systems auf den Träger ein gut wärmeleitender Kleber Vezerendung findet.10. Electrical component according to one of claims 1 to 9, d a -d u r c h e k e nn n n z e i n e t that for gluing the system onto the carrier a good thermally conductive adhesive is used.
DE19762619433 1976-05-03 1976-05-03 Semiconductor element or integrated circuit bonded to base - has coating protecting system from outgassing of adhesive Ceased DE2619433A1 (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3001613A1 (en) * 1980-01-17 1981-07-23 Siemens AG, 1000 Berlin und 8000 München METHOD FOR INSTALLING A SEMICONDUCTOR DEVICE IN A HOUSING
EP0123689A1 (en) * 1982-10-12 1984-11-07 Jeremy D Scherer Microcircuit package and sealing method.
US4633573A (en) * 1982-10-12 1987-01-06 Aegis, Inc. Microcircuit package and sealing method
EP0928027A2 (en) * 1998-01-05 1999-07-07 Nitto Denko Corporation Heat-conductive and pressure-sensitive adhesive sheets and method for fixing electronic parts to heat-radiating members with the use of the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3001613A1 (en) * 1980-01-17 1981-07-23 Siemens AG, 1000 Berlin und 8000 München METHOD FOR INSTALLING A SEMICONDUCTOR DEVICE IN A HOUSING
EP0123689A1 (en) * 1982-10-12 1984-11-07 Jeremy D Scherer Microcircuit package and sealing method.
EP0123689A4 (en) * 1982-10-12 1985-11-11 Jeremy D Scherer Microcircuit package and sealing method.
US4633573A (en) * 1982-10-12 1987-01-06 Aegis, Inc. Microcircuit package and sealing method
EP0928027A2 (en) * 1998-01-05 1999-07-07 Nitto Denko Corporation Heat-conductive and pressure-sensitive adhesive sheets and method for fixing electronic parts to heat-radiating members with the use of the same
EP0928027A3 (en) * 1998-01-05 2000-03-15 Nitto Denko Corporation Heat-conductive and pressure-sensitive adhesive sheets and method for fixing electronic parts to heat-radiating members with the use of the same
US6194063B1 (en) 1998-01-05 2001-02-27 Nitto Denko Corporation Heat-conductive and pressure-sensitive adhesive sheets and method for fixing electronic parts to heat-radiating members with the use of the same

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