JPH0136984B2 - - Google Patents
Info
- Publication number
- JPH0136984B2 JPH0136984B2 JP58103452A JP10345283A JPH0136984B2 JP H0136984 B2 JPH0136984 B2 JP H0136984B2 JP 58103452 A JP58103452 A JP 58103452A JP 10345283 A JP10345283 A JP 10345283A JP H0136984 B2 JPH0136984 B2 JP H0136984B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- solvent
- sealed
- semiconductor device
- epoxy resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 25
- 239000002904 solvent Substances 0.000 claims description 10
- 239000003822 epoxy resin Substances 0.000 claims description 9
- 229920000647 polyepoxide Polymers 0.000 claims description 9
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 claims description 7
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 150000003961 organosilicon compounds Chemical class 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 239000012860 organic pigment Substances 0.000 claims description 4
- 239000011134 resol-type phenolic resin Substances 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims description 2
- 239000001023 inorganic pigment Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 description 19
- 239000011347 resin Substances 0.000 description 19
- 238000007789 sealing Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- OWYWGLHRNBIFJP-UHFFFAOYSA-N Ipazine Chemical compound CCN(CC)C1=NC(Cl)=NC(NC(C)C)=N1 OWYWGLHRNBIFJP-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- -1 methyl isobutyl Chemical group 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/296—Organo-silicon compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
Description
〈技術分野〉
本発明は、小型、薄型で且つ高信頼性を有する
樹脂封止型半導体装置に関するものである。
〈従来技術〉
最近、電子腕時計、カメラ、電卓などの電子機
器が、小型化、薄型化するにつれて機器内部に組
み込まれる半導体装置の小型、薄型の要求が強く
なつている。この要求に答えるためにフイルム・
キヤリア方式による実装及び半導体素子の基板へ
の直接実装が広く応用されている。しかし、この
ような実装形態を用いてもさらにきびしくなる要
求には対応できなくなつている。
まずフイルム・キヤリア方式における従来から
用いられている樹脂封止形態例を第１図〜第４図
に示す。従来は第１図のように、半導体チツプ１
面の周囲に設けられたチツプ電極２にフイルム４
に支持されたリード端子３をボンデイングした
後、チツプ１及びリード端子３のボンデイング部
を含めて両面から樹脂５で封止した形態、及び第
２図のようにチツプ裏面は半硬化性樹脂を含浸さ
せたガラスクロスシート７、表面は樹脂６で封止
する形態が採用されていた。しかし一層小型、薄
型化の要求が強まるにつれて第３図及び第４図に
示すように、樹脂封止部分８，９を半導体チツプ
１の表面及びリード線３との接続部に限つて、樹
脂が占める嵩を低くし、上記要求に対応してい
た。
処でこの種の封止には一般にエポキシ系液状樹
脂が用いられるが、エポキシ系液状樹脂、例えば
エピビス型エポキシ樹脂、酸無水物硬化剤、及び
シリカ充填剤を混合した無溶剤タイプで第３図、
第４図のような樹脂封止を行つた場合次のような
欠点がある。
Γ無溶剤タイプで、充填剤としてシリカ等が添加
されているため、薄型化が困難で且つ、硬化後
の形状が“山”形になり不均一である。
Γ第１図、第２図の構造に比べ樹脂厚が薄いた
め、耐湿性が劣る。
Γ半導体チツプに対して片面からの樹脂封止とな
るため、耐熱衝撃性に劣る。
以上のように、従来の半導体封止用液状エポキ
シ樹脂では充分、小型、薄型化された樹脂封止型
半導体装置を得ることができず、且つ、従来の封
止構造に比して信頼性が劣つてしまう。
〈発明の目的〉
本発明は上記のような従来の樹脂封止型半導体
装置の欠点に鑑みてなされたものであり、封止用
エポキシ樹脂を改良することにより、小型、薄型
で優れた信頼性を有する樹脂封止型半導体装置を
提供するものである。
〈実施例〉
第５図及び第６図はフイルムキヤリア方式半導
体装置に本発明を適用した一実施例を示す側断面
図で、第５図はチツプにボンデイングされたリー
ド端子を比較的広く被つた構造を示し、第６図は
樹脂封止部をチツプ表面に限つた構造を示す。い
ずれの構造においても半導体チツプ１は従来装置
と同様にフイルム４に支持されたリード線３にボ
ンデイングされている。ボンデイングされた半導
体チツプ１は表面が樹脂１１，１２で被覆される
が、樹脂１１，１２は、
Γ薄く均一に封止できるように、エポキシ樹脂
を、溶剤含有タイプにし充填剤を添加しない。
Γ優れた耐湿性と耐熱衝撃性を得るために、半導
体素子表面との接着性を向上する。
の方向で改良したエポキシ樹脂を使用する。
即ち、上記樹脂１１は
(a) エピビス型エポキシ樹脂
(b) 有機けい素化合物
(c) レゾール型フエノール樹脂硬化剤
(d) 有機顔料又は無機顔料及び
(e) 芳香族炭化水素系溶剤、アルコール系溶剤、
ケント系溶剤を混合した有機溶剤を成分とする
液状エポキシ樹脂を用いる。
上記液状エポキシ樹脂１１，１２を更に具体的
に示すと次のようなものである。
(a) エピビス型エポキシ樹脂
(b) メトキシ基を有する有機けい素化合物
(c) レゾール型フエノール樹脂硬化剤
(d) クロモフタール（商品名：チバガイギー社
製）をベースとした有機顔料
(e) トルエン、キシレン、ブタノール、メチルイ
ソブチルケントの混合液
尚上記液状エポキシ樹脂組成物で、(b)有機けい
素化合物としては１分子中にメトキシ基を３個有
するもので、前記(a)、(b)及び(c)に示す樹脂分の30
重量％以下の配合量を適している。上記メトキシ
基を有する有機けい素化合物を、エピビス型エポ
キシ樹脂中の水酸基との間で、脱メタノール反応
させて、エポキシ樹脂をシリコーン化させ、水酸
基を減少させると樹脂の耐水性が向上する。また
末端基として残つたメトキシ基は半導体素子表面
のパツシベーシヨン膜、例えばSiO2、PSG膜表
面の水酸基との間で脱メタール反応を起し、樹脂
の接着力を向上させる。
(d) クロモフタール（商品名：チバガイギー社
製）をベースとした有機顔料は、微粉末で比重
が小さいために、分散性がよく溶剤で希釈した
場合でも沈降が少ない。
(e) 有機溶剤は硬化時の発泡を抑えるために沸点
の異なるものを数種類混合させてなり、溶剤の
含有量としては30〜70重量％が適している。
上記組成の液状エポキシ樹脂１１で封止する
と、第５図及び第６図のように非常に薄型（半導
体素子上の樹脂厚：100μm程度）で小型の樹脂封
止型半導体装置が得られる。
また、信頼性に関しても、従来のペレツトタイ
プ・エポキシ系樹脂で封止された第１図及び第２
図の封止形態の半導体装置に比較して、同等以上
の信頼性を有している。
以下に上記組成の液状エポキシ樹脂を用いた封
止と、従来の樹脂を用いた封止とを挙げて信頼性
評価試験の内容及び結果を以下に示す。
<Technical Field> The present invention relates to a resin-sealed semiconductor device that is small, thin, and highly reliable. <Prior Art> Recently, as electronic devices such as electronic wristwatches, cameras, and calculators have become smaller and thinner, there has been a strong demand for smaller and thinner semiconductor devices to be incorporated inside the devices. To meet this demand, film
Carrier-based mounting and direct mounting of semiconductor elements onto substrates are widely applied. However, even with this implementation, it is no longer possible to meet increasingly stringent requirements. First, examples of resin sealing conventionally used in the film carrier method are shown in FIGS. 1 to 4. Conventionally, as shown in Figure 1, a semiconductor chip 1
A film 4 is attached to the chip electrode 2 provided around the surface.
After bonding the lead terminal 3 supported by the chip, the chip 1 and the bonding part of the lead terminal 3 are sealed with resin 5 from both sides, and as shown in FIG. The surface of the glass cloth sheet 7 was sealed with resin 6. However, as the demand for smaller and thinner chips increases, as shown in FIGS. It met the above requirements by reducing the volume occupied. Epoxy-based liquid resin is generally used for this type of sealing, but epoxy-based liquid resin, for example, a solvent-free type mixed with Epibis type epoxy resin, acid anhydride curing agent, and silica filler, is used in Fig. 3. ,
When resin sealing as shown in FIG. 4 is performed, there are the following drawbacks. Since it is a Γ solvent-free type and contains silica or the like as a filler, it is difficult to make it thinner, and the shape after curing is "mountain" shaped and non-uniform. ΓSince the resin is thinner than the structure shown in FIGS. 1 and 2, the moisture resistance is inferior. Since the Γ semiconductor chip is sealed with resin from one side, it has poor thermal shock resistance. As described above, conventional liquid epoxy resins for semiconductor encapsulation cannot produce resin-encapsulated semiconductor devices that are sufficiently small and thin, and are less reliable than conventional encapsulation structures. I become inferior. <Object of the Invention> The present invention was made in view of the above-mentioned drawbacks of the conventional resin-sealed semiconductor device, and by improving the epoxy resin for sealing, it is possible to create a small, thin, and highly reliable semiconductor device. The present invention provides a resin-sealed semiconductor device having the following. <Example> Figures 5 and 6 are side sectional views showing an example in which the present invention is applied to a film carrier type semiconductor device. FIG. 6 shows a structure in which the resin sealing portion is limited to the chip surface. In either structure, the semiconductor chip 1 is bonded to lead wires 3 supported by a film 4, as in the conventional device. The surface of the bonded semiconductor chip 1 is coated with resins 11 and 12, and the resins 11 and 12 are made of a solvent-containing type epoxy resin and no filler is added so that the resins 11 and 12 can be sealed thinly and uniformly. ΓIn order to obtain excellent moisture resistance and thermal shock resistance, the adhesiveness with the semiconductor element surface is improved. Use an epoxy resin modified in the direction of. That is, the resin 11 includes (a) an epibis type epoxy resin, (b) an organosilicon compound, (c) a resol type phenolic resin curing agent, (d) an organic pigment or an inorganic pigment, and (e) an aromatic hydrocarbon solvent or an alcohol type solvent. solvent,
A liquid epoxy resin whose component is an organic solvent mixed with a Kent-based solvent is used. More specifically, the liquid epoxy resins 11 and 12 are as follows. (a) Epibis type epoxy resin (b) Organosilicon compound having a methoxy group (c) Resol type phenolic resin curing agent (d) Organic pigment based on chromophthal (trade name: manufactured by Ciba Geigy) (e) Toluene, A mixed solution of xylene, butanol, and methyl isobutyl Kent. In the above liquid epoxy resin composition, (b) the organosilicon compound has three methoxy groups in one molecule, and the above (a), (b) and 30 of the resin content shown in (c)
A blending amount of less than % by weight is suitable. When the organosilicon compound having a methoxy group is subjected to a demethanol reaction with the hydroxyl group in the epibis type epoxy resin to siliconize the epoxy resin and reduce the hydroxyl group, the water resistance of the resin is improved. Furthermore, the methoxy groups remaining as terminal groups cause a demetalization reaction with the hydroxyl groups on the surface of the passivation film on the surface of the semiconductor element, such as SiO 2 or PSG film, thereby improving the adhesive strength of the resin. (d) Organic pigments based on Cromophthal (trade name: Ciba Geigy) are fine powders with low specific gravity, so they have good dispersibility and little sedimentation even when diluted with a solvent. (e) The organic solvent is a mixture of several types of organic solvents with different boiling points in order to suppress foaming during curing, and a suitable solvent content is 30 to 70% by weight. When sealed with the liquid epoxy resin 11 having the above composition, a very thin (resin thickness on the semiconductor element: about 100 μm) and small resin-sealed semiconductor device can be obtained as shown in FIGS. 5 and 6. In addition, in terms of reliability, the conventional pellet type epoxy resin-sealed
Compared to the semiconductor device in the sealed form shown in the figure, it has the same or higher reliability. The contents and results of reliability evaluation tests are shown below, including sealing using a liquid epoxy resin having the above composition and sealing using a conventional resin.
【表】【table】
【表】【table】
【表】
ただし分母：テストサンプル数、分
子：不良発生数を表わす。
[Table] Denominator: number of test samples, numerator: number of defects.
【表】【table】
【表】
本発明の実施例の樹脂組成を以下の表６に示
す。[Table] The resin compositions of Examples of the present invention are shown in Table 6 below.
【表】【table】
【表】
〈効果〉
上述したように、本発明により小型、薄型で且
つ高信頼性を有する樹脂封止型半導体装置を提供
することができる。[Table] <Effects> As described above, the present invention can provide a resin-sealed semiconductor device that is small, thin, and highly reliable.
第１図乃至第４図はフイルムキヤリア方式にお
ける従来の樹脂封止半導体装置の断面図、第５
図、第６図は、本発明によるフイルム・キヤリア
方式における小型、薄型樹脂封止半導体装置の断
面図である。
１……半導体素子、２……突起電極、３……イ
ンナーリード、４……フイルム、１１，１２……
樹脂。
1 to 4 are cross-sectional views of conventional resin-sealed semiconductor devices using the film carrier method;
6 are sectional views of a small, thin resin-sealed semiconductor device using a film carrier method according to the present invention. 1... Semiconductor element, 2... Projection electrode, 3... Inner lead, 4... Film, 11, 12...
resin.
Claims (1)
素化合物 (c) レゾール型フエノール樹脂硬化剤 (d) 有機顔料又は無機顔料、及び (e) 有機溶剤 を成分とする液状エポキシ樹脂によつて封止され
ることを特徴とする樹脂封止型半導体装置。 ２ 前記１分子中にメトキシ基を３個有する有機
けい素化合物の配合量は、前記(a)、(b)及び(c)の混
合物に対して30重量％以下であることを特徴とす
る、特許請求の範囲第１項記載の樹脂封止型半導
体装置。 ３ 前記有機溶剤は、芳香族炭化水素系溶剤、ア
ルコール系溶剤及びケント系溶剤が混合されてな
ることを特徴とする、特許請求の範囲第１項記載
の樹脂封止型半導体装置。[Scope of Claims] 1 (a) Epibis type epoxy resin (b) Organosilicon compound having three methoxy groups in one molecule (c) Resol type phenolic resin curing agent (d) Organic pigment or inorganic pigment, and (e) A resin-sealed semiconductor device characterized in that it is sealed with a liquid epoxy resin containing an organic solvent. 2. The amount of the organosilicon compound having three methoxy groups in one molecule is 30% by weight or less based on the mixture of (a), (b) and (c), A resin-sealed semiconductor device according to claim 1. 3. The resin-sealed semiconductor device according to claim 1, wherein the organic solvent is a mixture of an aromatic hydrocarbon solvent, an alcohol solvent, and a Kent solvent.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58103452A JPS59227146A (en) | 1983-06-07 | 1983-06-07 | Resin-molded semiconductor device |
| US07/390,448 US4926239A (en) | 1983-06-07 | 1989-08-02 | Plastic encapsulant for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58103452A JPS59227146A (en) | 1983-06-07 | 1983-06-07 | Resin-molded semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59227146A JPS59227146A (en) | 1984-12-20 |
| JPH0136984B2 true JPH0136984B2 (en) | 1989-08-03 |
Family
ID=14354413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58103452A Granted JPS59227146A (en) | 1983-06-07 | 1983-06-07 | Resin-molded semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59227146A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2568584B2 (en) * | 1987-10-15 | 1997-01-08 | 日東電工株式会社 | Semiconductor device |
| JP2638191B2 (en) * | 1989-03-17 | 1997-08-06 | 株式会社日立製作所 | Method for producing high-purity phenolic resin, method for producing the resin composition, and method for producing a semiconductor device using the resin composition |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS578220A (en) * | 1980-06-18 | 1982-01-16 | Toshiba Corp | Epoxy resin composition and resin-sealed semiconductor device |
| JPS57119947A (en) * | 1981-01-19 | 1982-07-26 | Toshiba Corp | Epoxy resin composition |
| JPS57131223A (en) * | 1981-02-06 | 1982-08-14 | Hitachi Ltd | Resin composition |
-
1983
- 1983-06-07 JP JP58103452A patent/JPS59227146A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS578220A (en) * | 1980-06-18 | 1982-01-16 | Toshiba Corp | Epoxy resin composition and resin-sealed semiconductor device |
| JPS57119947A (en) * | 1981-01-19 | 1982-07-26 | Toshiba Corp | Epoxy resin composition |
| JPS57131223A (en) * | 1981-02-06 | 1982-08-14 | Hitachi Ltd | Resin composition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59227146A (en) | 1984-12-20 |
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