JP2638191B2 - Method for producing high-purity phenolic resin, method for producing the resin composition, and method for producing a semiconductor device using the resin composition - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a high-purity phenol resin, and particularly to a high-purity phenol resin which provides a phenol resin composition excellent in moldability, adhesiveness, electric properties and heat resistance. And a resin composition and a semiconductor device using the same.

[Conventional technology]

Insulation, adhesion, and structural materials of electronic devices and electrical equipment, etc., depending on the purpose, phenolic resin, unsaturated polyester resin, epoxy resin, silicone resin, thermosetting resin such as polyimide resin, or nylon, polyacetal, polycarbonate, Polyester, porsulfone,
Thermoplastic resins such as polyether sulfone, polyamide imide, and fluororesin are used.

However, in the case of a resin-encapsulated semiconductor device or a multilayer printed circuit board requiring high reliability as an example, most of the resins used are epoxy resins, silicone resins, and polyimide resins.

In particular, semiconductor products such as transistors, ICs, LSIs, and VLSIs
0% or more are resin-sealed molds formed by transfer molding using a thermosetting resin mainly composed of epoxy resin.

The degree of integration of the semiconductor chips of the semiconductor products has been improved year by year, and accordingly, the chip size has been increased, the wiring has been miniaturized, and the number of layers has been increased.

Along with the above, the surface of the semiconductor chip has become delicate, and the thickness of the sealing resin layer has been gradually reduced.

Further, with the shift from the pin insertion type to the surface mount type, the package has been exposed to a higher temperature (200 ° C. or higher) than before at the time of mounting. For this reason, the occurrence of cracks in the sealing resin, the semiconductor chip, or the passivation film due to thermal stress poses a problem.

[Problems to be solved by the invention]

In recent years, as the use conditions of electronic devices and electric devices using such resins have become stricter, requirements for safety have become even more severe, and higher heat resistance, flame retardancy, and durability have been required.

For example, a halogen-based or phosphorus-based compound is used as a flame retardant for making an epoxy resin flame-retardant.
However, since these flame retardants have relatively low thermal decomposition temperatures, there is a problem in that they are thermally decomposed by heating during molding, and the decomposition products degrade the electrical properties. In particular, decomposition products of halogen-based flame retardants are problematic because they contain harmful substances.

The present invention has been made in view of such circumstances,
The objectives are moldability, adhesion, electrical properties,
Provided are a method for producing a high-purity phenol resin having excellent moisture resistance and heat resistance, and particularly having excellent properties as a sealing material for a semiconductor device, a method for producing the resin composition, and a method for producing a semiconductor device using the resin composition. Is what you do.

[Means for solving the problem]

Conventionally, phenolic resins have a high content of ionic impurities and generate free phenol or ammonia gas during curing or when the cured product is exposed to high temperatures, causing corrosion of surrounding metal materials and electrical properties. It has been considered that practical use is almost impossible as a material for electronic parts in order to reduce such factors.

The present inventors have paid attention to the fact that a phenol resin is excellent in flame retardancy, and have studied the improvement of its electrical properties and its applicability to molding materials.

As a result, surprisingly, the resol-type phenol resin can improve the above-mentioned properties by high-purity purification. Particularly, when used for encapsulation of a semiconductor device, the solder heat resistance of the semiconductor device and the high-temperature length can be improved. It has been found that even if the heating is performed for a long time, the reliability and the like of the joint between the gold wire and the aluminum electrode are not adversely affected, and the present invention has been accomplished.

[1] Formula [I] obtained by condensing a phenol compound and formaldehyde Wherein R ₁ is H, -CH ₂ OH or (R is H or —CH ₂ OH), and R ₂ is —CH ₂ — or —CH ₂
-O-CH ₂ - shows a. However, -CH ₂ -O-CH ₂ -includes at least 20% of all R ₂ , and n represents a number of 3 to 10. The resole-type phenolic resin represented by the above is washed with an organic solvent and pure water, and the electrical conductivity of an extract obtained by heating and extracting the resin after the treatment with 10 times the amount of hot water at 120 ° C. for 100 hours or more is obtained. 100 μS / cm or less, pH
A high-purity phenolic resin, characterized in that the above-mentioned washing treatment is repeatedly carried out until the amount of halogen ions, ammonium ions or metal ions becomes 3 ppm or less, respectively.

[2] The number average molecular weight of the resole type phenol resin is
The method for producing a high-purity phenol resin according to the above [1], wherein the unreacted phenol in the resin is 400% or more and 1% by weight or less.

[3] A resin composition obtained by blending a resole-type phenol resin represented by the above formula [I] obtained by condensing a phenol compound and formaldehyde, and 25 to 5% by weight of an epoxy resin with the resin. After washing with a solvent and pure water, the extracted resin is heated and extracted with 10 times the volume of hot water at 120 ° C for 100 hours or more.
A high-purity phenolic resin composition, wherein the above-mentioned washing treatment is repeated until the amount of halogen ions, ammonium ions or metal ions becomes 3 ppm or less, respectively, to remove the organic solvent and water.

[4] In a method for producing a semiconductor device in which a semiconductor element is sealed with a resin composition containing an inorganic filler, the resin component of the resin composition is obtained by condensing a phenol compound and formaldehyde with the above-mentioned formula [I]. A resin composition obtained by blending a resole type phenol resin represented by the following formula with 25 to 5% by weight of an epoxy resin is subjected to a washing treatment with an organic solvent and pure water. Until the electric conductivity of the extract extracted by heating with hot water at 120 ° C. for 100 hours or more is 100 μS / cm or less, the pH is 3 to 7, and the amount of halogen ions, ammonium ions or metal ions is 10 ppm or less, respectively. A method for manufacturing a semiconductor device, comprising using a resin obtained by repeatedly performing a cleaning process to remove the organic solvent and water.

The resol-type phenolic resin of the present invention is synthesized by subjecting various phenols and aldehydes to a condensation reaction in the presence of an amine or an alkali catalyst or an organic metal salt. In order to remove the contaminating impurities, the condensate was dissolved in an organic solvent, and a large amount of pure water was added to the solution and the mixture was stirred vigorously.
After standing, the washing process of removing the supernatant is repeated, whereby the desired high-purity phenol resin can be obtained.

The purity can be estimated by extracting the resin by heating it for 10 hours or more with 120 ° C hot water for 100 hours or more. The extract has an electric conductivity of 100 µS / cm or less, a pH of 3 to 7, a halogen ion, an ammonium ion or a metal ion. The amounts are each 10 ppm or less.

According to the present inventors, it has been confirmed that the resol-type phenol resin can be highly purified only by pure water washing.

However, in that case, it is necessary to increase the number of times of the cleaning process to twice or more. From an industrial point of view, it is preferable that the number of times of the cleaning treatment is small.

The present invention is characterized in that an organic solvent is used to improve the cleaning effect. This makes it possible to reduce the number of times of the cleaning process by about half compared to the case of the cleaning process using pure water only.

In particular, the electrical insulation properties of the cured product, the biggest drawback of phenolic resin, is 10 ¹³ Ωcm when washed with pure water only.
(No washing: 10 ¹⁰ Ωcm), whereas when the organic solvent of the present invention is used, it can be improved to 10 ¹⁴ Ωcm or more.

In addition, since metal salts and the like are removed at the same time, thermal deterioration hardly occurs, and the weight reduction rate by heating at 250 ° C. is 20 to 30% lower than that of the case washed with pure water alone.

In the present invention, a specific example of the organic solvent used for the cleaning treatment is not particularly limited as long as it can dissolve the resol-type phenol resin, but a solvent having compatibility with water is preferable.

Specific examples of the organic solvent include acetone, tetrahydrofuran, methyl ethyl ketone, hexane, cyclohexane, ethyl acetate, dioxane, and methyl isobutyl ketone. A solvent having a high boiling point is not preferred because it is not easy to remove it later.

The amount of the solvent used may be any amount necessary for dissolving the resin, but it is preferable to add the solvent in an amount equal to or slightly larger than the resin.

The resol-type phenolic resin can be synthesized by subjecting a phenol such as phenol or cresol to a condensation reaction with formalin in the presence of a catalyst such as an amine or an alkali catalyst or an organic metal salt. From the relationship with the fluidity, it is desirable to set the reaction conditions so that the number average molecular weight is 400 or more.

Examples of the amine catalyst include ammonia, dimethylamine, diethylamine, aniline, hexamethylenetetramine, triethylamine, and triethanolamine.
Further, as the alkali catalyst, sodium hydroxide, potassium hydroxide, calcium hydroxide, magnesium hydroxide,
There are barium hydroxide, calcium oxide, magnesium oxide and the like.

As organic metal salts, zinc acetate, copper acetate, iron acetate, lead acetate, magnesium acetate, calcium acetate, barium acetate, nickel acetate, cobalt acetate, metal salts of aliphatic carboxylic acids such as cadmium acetate, zinc benzoate, Metal salts of aromatic carboxylic acids such as zinc phthalate can be mentioned.

For removing unreacted raw materials and ionic impurities,
It is effective to use a neutralization treatment using an acid or steam distillation in combination with the washing treatment.

The thus obtained resol-type phenolic resin of the present invention has a reactive methylol group, dimethylene ether group and hydroxyl group in the molecule, and therefore can be cured by heating alone. Moreover, its reactivity is considerably faster than that of epoxy resin even when a curing catalyst is not used.

In particular, among the resole-type phenol resins represented by the general formula [I], those having a large number of dimethylene ether (—CH ₂ —O—CH ₂ —) bonds represented by R ₂ are obtained by condensing water during curing. Since the generation is small, a cured product having excellent properties is provided.

For that purpose, in the general formula [I], it is necessary that at least 20% of all R ₂ is —CH ₂ —O—CH ₂ —.

Incidentally, the high-purity resol type phenolic resin of the present invention,
It is desirable that the unreacted phenol content in the resin is 1% by weight or less. With this level of unreacted phenol,
There is no problem because it reacts during curing.

Further, the high-purity phenol resin of the present invention can be cured with an epoxy resin or a maleimide resin. In particular, in order to satisfactorily achieve the object of the present invention, the electrical properties of a cured product can be further improved by using a well-known epoxy resin as a curing agent. In this case, 75 to 95% by weight of resole type phenol resin
25 to 5% by weight (curing rate controlling agent) is blended. It is not preferable to mix the epoxy resin in an amount of more than 25% by weight because the flame retardancy of the cured product is reduced. On the other hand, if it is less than 5% by weight, the effect of the epoxy resin compounding cannot be sufficiently obtained.

The epoxy resin is a well-known resin obtained by a condensation reaction between bisphenol A or phenol novolak resin and epichlorohydrin. It goes without saying that the epoxy resin must also be one from which unreacted raw materials and ionic impurities have been sufficiently removed.

The ionic impurities contained in these resin components are, as in the case of the phenolic resin of the present invention, 10 times the amount of the resin.
When extracted with hot water at 120 ° C for 100 hours or more, the electric conductivity of the extract is 100 μS / cm or less, the pH is 3 to 7, and the extraction amount of halogen ions, ammonium ions, or metal ions is 10 ppm or less, respectively. should not.

The high-purity phenol resin and the high-purity phenol resin composition of the present invention can contain an inorganic filler.

The inorganic filler is added for the purpose of improving the thermal expansion coefficient, thermal conductivity, elastic modulus and the like of the cured product, and is preferably used in the range of 55 to 80% by volume based on the whole resin or composition.

If the content is less than 55% by volume, the above properties cannot be sufficiently improved, and if the content exceeds 80% by volume, the viscosity of the material increases significantly and the fluidity decreases. It is better to mix them. Although various inorganic fillers can be used, it is particularly important to use a thermally and chemically stable filler for electronic components.
Specifically, fused silica, crystalline silica, alumina and the like are desirable.

Recently, spherical fused silica, which has been mass-produced industrially, is useful because it has a small coefficient of thermal expansion itself and, when mixed with a resin, has a small increase in viscosity and a decrease in fluidity of the composition. is there.

The average particle size of the filler is desirably 1 to 30 μm. When the thickness is less than 1 μm, the viscosity of the resin composition is increased and the fluidity is significantly reduced. In addition, when the thickness exceeds 30 μm, the resin and the filler are easily separated at the time of molding, and an uneven layer is formed in the cured product.
In addition, it is not preferable because it has adverse effects such as impairing the filling property of the narrow gap.

The high-purity phenolic resin or the composition of the present invention includes:
If necessary, a curing catalyst for accelerating the curing reaction of the resin, a flexibilizing agent for toughening or lowering the elasticity of the cured product, a coupling agent for increasing the adhesiveness between the resin and the filler, and coloring. Various additives such as dyes and pigments for the release, and release agents for improving the releasability from the mold at the time of curing molding can be used in combination within a range that does not impair the object of the present invention.

Similarly, when the filler and these various additives contain a large amount of ionic impurities, various reliability of the product is significantly reduced. When extraction is performed with hot water at 120 ° C for 100 hours or more, the extract has an electric conductivity of 100 μS / cm or less, a pH of 3 to 7, and an extraction amount of halogen ion, ammonium ion, or metal ion of 10 ppm or less. It is necessary to be.

In order to reduce the influence of the above ionic impurities on the reliability of various products, it is also effective to directly mix fine powder of an ion exchange resin or an ion exchanger in the resin.

In particular, a so-called inorganic ion exchanger such as antimony or bismuth hydroxide, hydrated oxide, phosphorus antimonate, zirconium antimonate, titanium antimonate, tin antimonate, chromium antimonate, and tantalum antimonate is used as a resin or a resin composition. For 100 parts by weight
By adding 0.01 to 5 parts by weight, preferably 0.1 to 1 part by weight, the aluminum wiring and the electrode section during the moisture resistance test of the resin-encapsulated semiconductor device, the corrosion disconnection of the electrode portion, and the high-temperature storage test of the resin-encapsulated semiconductor device Is effective in preventing corrosion breakage at the joint between the gold wire and the aluminum electrode.

[Action]

The electrical properties and other properties of the high-purity resol phenolic resin of the present invention are excellent because various ionic impurities have been removed by advanced purification. In addition, the reason why the flame retardancy of phenolic resin is excellent is the presence of a benzene ring or phenolic hydroxyl group with a high carbon content,
Alternatively, it is considered that the heat resistance of the cured resin is excellent.

 Next, the present invention will be described with reference to examples.

Example 1 (Synthesis of resol type phenol resin) 500 g of phenol, 30% formalin 550
g, 5 g of zinc acetate as a curing agent was added, and the mixture was gradually heated with stirring and heated under reflux at 90 ° C. for 60 minutes, and then the pressure in the flask was reduced to 20 mmHg to remove condensed water and unreacted components.

Next, as a washing treatment, 300 g of acetone was added to the above reaction product to dissolve it, and ion-exchanged water 3 was added thereto, and the mixture was vigorously stirred at 50 ° C. for 30 minutes. After cooling to room temperature, the upper aqueous layer was removed. Removed. This washing process was repeated seven times.

After each washing process, a part of the reaction product is collected,
It was dried by heating at 40 ° C. for 48 hours under reduced pressure to obtain an unwashed one and six kinds of resol type phenol resins having different degrees of washing.

Washing frequency and melt viscosity of the obtained resol-type phenolic resin, curing properties, and pH of water, electric conductivity and extraction after addition of 50 g of ion-exchanged water to 5 g of this resol-type phenolic resin and heating at 120 ° C. for 120 hours. Table 1 shows the analysis results of the ionic impurity concentrations.

As is clear from Table 1, the resol-type phenolic resin was subjected to the above-mentioned washing treatment five times, so that the electric conductivity of the extract became about 20 μS / cm, the amount of ionic impurities was extremely small, and the washing effect was remarkable. It turns out that it is. On the other hand, in the case of washing with pure water only, the content of ionic impurities is higher than in the case of using an organic solvent.

Examples 2 to 7 A resol type phenol resin obtained by performing the above-mentioned washing treatment 5 times (number average molecular weight: 710, softening temperature: 73 ° C., free phenol content: 0.3% by weight), and o-cresol novolak type epoxy resin (Softening temperature, 75 ° C., epoxy equivalent: 198) and 2-phenyl-4- as a curing accelerator
Methyl-5-hydroxymethylimidazole, spherical fused silica having an average particle size of 15 μm as a filler, epoxysilane as a coupling agent, montanic acid ester wax as a release agent, carbon black as a coloring agent,
It was blended in the ratio shown in the table.

Each composition was kneaded with a biaxial roll having a diameter of 20 inches (roll surface temperature of about 60 ° C.) for 10 minutes, and then pulverized to prepare a molding resin composition.

Comparative Examples 1 to 3 Unpurified resol type phenol resin (initial (unwashed one in Table 1; number average molecular weight: 550, softening temperature: 62 ° C,
(Free phenol content: 3.2% by weight), and a composition having the compounding ratio shown in Table 2 was prepared in the same manner as in Example 2.

Comparative Example 4 90 parts by weight of o-cresol novolak type epoxy resin (softening temperature: 75 ° C., epoxy equivalent: 195), 10 parts by weight of brominated bisphenol A type epoxy resin (softening temperature: 65 ° C., epoxy equivalent: 394), and cured 55 parts by weight of phenol novolak resin (softening temperature: 65 ° C, hydroxyl equivalent: 106) as an agent, 1.0 part by weight of triphenylphosphine as a curing accelerator, and spherical fused silica having an average particle size of 15 μm as a filler
470 parts by weight, antimony trioxide 10 parts by weight as a flame retardant aid, epoxy silane 3.0 parts by weight as a coupling agent,
A composition containing 1.0 part by weight of a montanic acid ester wax as a release agent and 1.0 part by weight of carbon black as a coloring agent was kneaded using a biaxial roll in the same manner as in Example 2 to prepare a molding resin composition. .

Comparative Example 5 100 parts by weight of an o-cresol novolak type epoxy resin (softening temperature: 75 ° C., epoxy equivalent: 195) as a resin, and a phenol novolak resin (softening temperature: 65 ° C.,
Hydroxyl equivalent: 106) 58 parts by weight, triphenylphosphine 1.0 part by weight as a curing accelerator, average particle size 15 μ as a filler
m 480 parts by weight of fused silica, 10 parts by weight of antimony trioxide as a flame retardant aid, 3.0 parts by weight of epoxysilane as a coupling agent, 1.0 part by weight of montanic acid ester wax as a release agent, carbon black as a colorant The composition containing 1.0 part by weight was kneaded using a biaxial roll in the same manner as in Example 1 to prepare a molding resin composition.

The moldability of each of the resin compositions of Examples 2 to 7 and Comparative Examples 1 to 5, and a mold temperature of 180 ° C., a pressure of 70 kg / cm ² , and a time of 90 seconds molded at 180 ° C. for 6 hours The properties of the cured molded article were compared.

Furthermore, 50 ml of ion-exchanged water was added to 5 g of a powder obtained by pulverizing the molded product to 100 mesh or less, and various properties of water after heating at 120 ° C. for 120 hours were compared. The results are summarized in Table 2.

Table 2 shows that the cured products of Examples 2 to 7 using the high-purity resol-type phenol resin of the present invention were compared with those of Comparative Examples 1 to 3 using the unpurified resol-type phenol resin. It can be seen that the electrical characteristics of the sample were excellent, and the extraction amount of ionic impurities was extremely small.

Also, as compared with those of the conventional epoxy resins shown in Comparative Examples 4 and 5, the moldability is almost the same, but the heat resistance (glass transition temperature, high-temperature bending strength) of the cured product is extremely excellent. You can see that.

Further, the molding resin compositions shown in Examples 2 to 7 were different from the epoxy resin composition of Comparative Example 4 in that even if a flame retardant aid was not blended, the flame retardant grade of UL standard: V −0 can be satisfied.

Table 3 shows the results of the reliability test of the semiconductor device sealed with each of the above resin compositions.

In the test semiconductor device, a silicon chip having zigzag aluminum wiring on the surface is mounted on a copper-based lead frame, and further, the aluminum electrode on the chip surface and the lead frame are connected by a gold wire (30 μm in diameter). And sealed with the resin composition.

From Table 3, it can be seen that those using the resin composition of the present invention have extremely excellent moisture resistance reliability, heat resistance, and crack resistance of the package during mounting (reflow).

Next, an example in which the resin composition of the present invention is used for an electronic device will be specifically described with reference to the drawings.

FIG. 1 is a sectional view showing the structure of a planar transistor of the present invention.

A pnp transistor is formed on a surface layer of a silicon semiconductor substrate 1. A silicon dioxide film 2 is formed for insulation between the emitter, base and collector formed on the surface of the substrate 1, and a base electrode 3 and an emitter electrode 4 are formed of an aluminum vapor-deposited film. The substrate 1 is fixed to the tip of a tab lead 7, bonded with a gold (or aluminum) wire 5, and covered and protected with a resin for an undercoat 6 to obtain a high-purity phenol resin composition including the tip of a double lead 7. 8 and transfer-molded.

FIG. 2 is a sectional view showing a structure of a semiconductor device having an integrated circuit.

The semiconductor integrated circuit 11 is a package 15 made of ceramic.
A bonding pad 14 fixed above and provided around the integrated circuit 11 and an external connection lead terminal 12 of the package are connected by a bonding wire 13. The above integrated circuit
11, the bonding wire 13, the external connection lead terminal 12, and the bonding pad 14 were undercoated with moisture-resistant polyimide 9, and the upper portion was sealed with a high-purity phenol resin composition 8.

FIG. 3 is a sectional perspective view showing the structure of the semiconductor memory device.

A memory element 71 made of a silicon chip is fixed to a chip support 72, and an external lead 73 and an electrode pad 77 of the memory element 71 are connected by a bonding wire 74.
The surface of the above memory element has a low content of uranium and thorium.
An α-ray shielding layer 76 made of a resin composition of 1 ppb or less was provided. This was transfer-molded with the high-purity phenol resin composition 8.

FIG. 4 is a sectional view showing the structure of a semiconductor device having a two-layer wiring structure on the surface of a semiconductor substrate.

A metal film is formed on a semiconductor substrate 41 having a silicon dioxide film 42 on the surface, and an unnecessary portion of the metal film is removed by a known etching method to form a first film having a desired wiring pattern.
Is provided. The conductor layer 43 is electrically connected to the semiconductor element via a through hole 48 provided at a predetermined position of the silicon dioxide film 42. Next, after the silicon dioxide film 42 was coated on the layer 43 by a chemical vapor deposition method (or a known method such as a high frequency sputtering method), a through hole 49 was formed in the silicon dioxide film at the conductor connection portion.

Next, a film 44 of an aminosilane compound was formed. Furthermore,
A polyimide film 45 was formed, and a predetermined portion of the polyimide film was etched to expose a part of the first conductor layer 43. A second conductor layer 46 was similarly formed thereon to produce a semiconductor device having a two-layer wiring structure. Further, the device was coated with a high-purity phenol resin composition 8.

All of the electronic devices of the present invention exhibited excellent heat resistance, moisture resistance and flame retardancy.

[Effects of the Invention] The present invention is an industrially excellent method since the number of washing treatments can be reduced to about half by using an organic solvent and water for purification of a high-purity phenol resin.

Further, the high-purity phenol resin or the resin composition obtained by the method has excellent moldability, heat resistance, flame retardancy, and the like, and is effective as an electronic component as a sealing resin.

In particular, a semiconductor device sealed with the resin composition has excellent electrical characteristics, heat resistance, moisture resistance, flame retardancy, and the like.

[Brief description of the drawings]

FIG. 1 is a sectional view showing the structure of a planar transistor of the present invention, FIG. 2 is a sectional view showing the structure of a semiconductor device having an integrated circuit, and FIG. 3 is a semiconductor having a two-layer wiring structure on the surface of a semiconductor substrate. FIG. 4 is a sectional view showing the structure of the device, and FIG. 4 is a sectional perspective view showing the structure of the semiconductor memory element. 1,11,41,71 …… Silicon semiconductor element substrate, 2,42,47…
... Silicon dioxide film, 3 ... Base electrode, 4 ... Emitter electrode, 5,13,74 ... Wire, 6,9 ... Undercoat, 7 ...
… Tab lead, 8… high-purity phenolic resin composition, 12
…… External connection lead terminal, 14,77 …… Bonding pad, 15… Ceramic package, 43,46 …… Conductor layer, 4
4 ... amino silane compound film, 48,49 ... throughhole, 45
... Polyimide film, 76 .alpha.-ray shielding layer.

Continuing on the front page (72) Inventor Shuji Eguchi 4026 Kuji-cho, Hitachi City, Ibaraki Prefecture Inside Hitachi, Ltd.Hitachi Research Laboratory, Ltd. 72) Inventor Osamu Horie 1772-1 Shikabo, Yuki-shi, Ibaraki Pref. Inside the Minami-Yuki Plant of Hitachi Chemical Co., Ltd. (56) References JP-A-60-53516 (JP, A) A) JP-A-61-152725 (JP, A) JP-A-59-227146 (JP, A) JP-A-59-200444 (JP, A) Edited by Hiroshi Kakiuchi “New epoxy resin” (Showa 60-5-10) Shokodo Co., Ltd. 416-417

Claims (4)

(57) [Claims] 1. A compound of the formula [I] obtained by condensing a phenol compound with formaldehyde Wherein R ₁ is H, -CH ₂ OH or (R is H or —CH ₂ OH), and R ₂ is —CH ₂ — or —CH ₂
-O-CH ₂ - shows a. However, -CH ₂ -O-CH ₂ -includes at least 20% of all R ₂ , and n represents a number of 3 to 10. The resole-type phenol resin represented by the above is washed with an organic solvent and pure water, and the resin after the treatment is heated and extracted with a 10-fold amount of hot water at 120 ° C. for 100 hours or more to have an electric conductivity of 100 μS. A method for producing a high-purity phenol resin, wherein the washing treatment is repeated until the pH is 3 to 7 or less, and the amount of halogen ions, ammonium ions or metal ions is 10 ppm or less. 2. The method for producing a high-purity phenol resin according to claim 1, wherein the resol-type phenol resin has a number average molecular weight of 400 or more and unreacted phenol in the resin is 1% by weight or less. 3. A compound of the formula [I] obtained by condensing a phenol compound with formaldehyde. Wherein R ₁ is H, -CH ₂ OH or (R is H or —CH ₂ OH), and R ₂ is —CH ₂ — or —CH ₂
-O-CH ₂ - shows a. However, -CH ₂ -O-CH ₂ -includes at least 20% of all R ₂ , and n represents a number of 3 to 10. And a resin composition obtained by mixing 25 to 5% by weight of an epoxy resin with an organic solvent and pure water. The extract was heated and extracted with hot water at 120 ° C. for at least 100 hours. The extract was washed until the electric conductivity was 100 μS / cm or less, the pH was 3 to 7, and the amount of halogen ions, ammonium ions or metal ions was 10 ppm or less. A method for producing a high-purity phenol resin composition, comprising repeating the treatment to remove the organic solvent and water. 4. A method for producing a semiconductor device in which a semiconductor element is sealed with a resin composition containing an inorganic filler, wherein a resin component of the resin composition is obtained by condensing a phenol compound and formaldehyde with a compound represented by the formula [I] ] Wherein R ₁ is H, -CH ₂ OH or (R is H or —CH ₂ OH), and R ₂ is —CH ₂ — or —CH ₂
-O-CH ₂ - shows a. However, -CH ₂ -O-CH ₂ -includes at least 20% of all R ₂ , and n represents a number of 3 to 10. And a resin composition obtained by blending the resin composition with 25 to 5% by weight of an epoxy resin, with an organic solvent and pure water, and subjecting the resin composition after the treatment to a washing treatment. Until the electric conductivity of the extract extracted by heating with 10 times the amount of hot water at 120 ° C for 100 hours or more is 100 μS / cm or less, the pH is 3 to 7, and the amount of halogen ions, ammonium ions or metal ions is 10 ppm or less, respectively. A method for manufacturing a semiconductor device, comprising: using a resin from which the organic solvent and water have been removed by repeatedly performing the cleaning process.