JPS63115350A - Resin-sealed semiconductor device - Google Patents
Resin-sealed semiconductor deviceInfo
- Publication number
- JPS63115350A JPS63115350A JP26225986A JP26225986A JPS63115350A JP S63115350 A JPS63115350 A JP S63115350A JP 26225986 A JP26225986 A JP 26225986A JP 26225986 A JP26225986 A JP 26225986A JP S63115350 A JPS63115350 A JP S63115350A
- Authority
- JP
- Japan
- Prior art keywords
- impurity
- leads
- substance layers
- resin
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 5
- 239000012535 impurity Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000011347 resin Substances 0.000 abstract description 10
- 229920005989 resin Polymers 0.000 abstract description 10
- 238000007789 sealing Methods 0.000 abstract description 8
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 229910045601 alloy Inorganic materials 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 3
- 150000001875 compounds Chemical class 0.000 abstract description 3
- 150000002500 ions Chemical class 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract 6
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 2
- 241000272201 Columbiformes Species 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、外部から侵入した不純物により、半導体素子
が劣化するのを防ぐための樹脂封止型半導体装置に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a resin-sealed semiconductor device for preventing semiconductor elements from deteriorating due to impurities entering from the outside.
従来の技術
従来のパッケージ内不純物侵入防止対策を施したものの
例を第２図ａ、ｂの開封平面図、断面図に示す。この例
では、リード１のワイヤボンド部４に金メッキ７を行い
、リード１と封止樹脂２の密着性を良くすることにより
、リード１と封止樹脂２の界面を伝って不純物が侵入す
るのを訪いだ。BACKGROUND OF THE INVENTION An example of a conventional package in which measures are taken to prevent impurities from entering the package is shown in the unsealed plan view and cross-sectional view of FIGS. 2a and 2b. In this example, gold plating 7 is applied to the wire bond part 4 of the lead 1 to improve the adhesion between the lead 1 and the sealing resin 2, thereby preventing impurities from entering through the interface between the lead 1 and the sealing resin 2. I visited.
発明が解決しようとする問題点
従来の技術のように、外部からの不純物の侵入を防ぐた
めに、リードと封止樹脂の密着性を良くする方法では、
−度侵入した不純物に対する処置が考慮されていないた
め、侵入した不純物による汚染、腐食等を防ぐことがで
きない。Problems to be Solved by the Invention In conventional techniques, methods of improving the adhesion between the leads and the sealing resin in order to prevent impurities from entering from the outside,
- Because no consideration is given to measures against impurities that have entered the system, it is not possible to prevent contamination, corrosion, etc. caused by the impurities that have entered.
問題点を解決するための手段
本発明は、上記問題点を解決するため、インナーリード
の一部表面に第３物質層を設け、外部がら侵入した不純
物をこの第３物質層と反応させて安定な化合物に変えて
、それ以上内部に侵入しないようにするものである。Means for Solving the Problems In order to solve the above problems, the present invention provides a third material layer on a part of the surface of the inner lead, and stabilizes impurities that have entered from the outside by reacting with the third material layer. This is to prevent it from entering the interior any further by changing it to a chemical compound.
作用
本発明により、リード線を伝っての外部からの不純物の
侵入を、第３物質層によって有効に防ぐだけでなく、−
度侵入した不純物が、さらに内部に侵入するのを防ぐこ
とができる。According to the present invention, the third material layer not only effectively prevents impurities from entering from the outside through the lead wires, but also -
It is possible to prevent impurities that have already entered the interior from further entering the interior.
実施例
第１図ａおよびｂは、本発明の樹脂封止型半導体装置の
実施例の開封状態の平面図および断面図を示す。リード
１の樹脂２により封止される部分のうちインナーリード
部３からワイヤボンド部４までの間に不純物の反応しや
すい第３物質層５を塗布する。Embodiment FIGS. 1a and 1b show a plan view and a cross-sectional view of an embodiment of the resin-sealed semiconductor device of the present invention in an unsealed state. A third material layer 5 that is easily reacted with impurities is applied between the inner lead portion 3 and the wire bond portion 4 of the portion of the lead 1 to be sealed with the resin 2 .
この第３物質層５は、リード１等に使われている材料よ
りも不純物と反応しやすいものであればよく、たとえば
、Ｆｅ−Ｎｉ合金を材料とするり−ド１でＮａ＋イオン
を含む水や、Ｃｅイオンを含む水からの不純物の場合、
Ｆｅ−Ｎｉよりもイオン化傾向の高いＺｎやＭｇをＦｅ
−Ｎｉリード１に塗布することにより、侵入してきたＮ
ａ＋、Ｃｅ−はＺｎ。This third material layer 5 may be made of any material that reacts more easily with impurities than the material used for the lead 1 etc. For example, if the lead 1 is made of Fe-Ni alloy, water containing Na+ ions is used. In the case of impurities from water containing Ce ions,
Zn and Mg, which have a higher ionization tendency than Fe-Ni, are
-By coating Ni lead 1, the intruded N
a+ and Ce- are Zn.
Ｍｇと反応して、この第３物質層Ｓ中で化合物を生成す
るこのため、この第３物質層５よりも内部にＮａ”、
Ｃ（１−が侵入するのを防ぐことができる。Reacts with Mg to produce a compound in this third material layer S. Therefore, Na'',
C(1- can be prevented from entering.
また、塗布する位置は、封止樹脂２内のり−ド１全体で
なく、ワイヤボンド４位置より先端のり一ド１には塗布
せず、ワイヤポンド４位置でワイヤ６と接触することの
ないようにする。Also, the position to be applied is not on the entire glue 1 in the sealing resin 2, but on the tip of the glue 1 from the wire bond 4 position, so that it does not come into contact with the wire 6 at the wire bond 4 position. do.
なお、図面ではリード１の表裏に塗布しているが、表だ
けの塗布でもよい。Although the drawing shows the coating applied to the front and back sides of the lead 1, the coating may be applied only to the front side.
発明の効果
以上述べてきたように、本発明の方法によれば、−度封
止樹脂内に侵入した不純物をワイヤボンド位置の前にあ
る第３物質層にトラップすることができ、さらに、その
不純物がワイヤからチップへと内部に侵入することも防
ぐことができる。Effects of the Invention As described above, according to the method of the present invention, impurities that have penetrated into the sealing resin can be trapped in the third material layer in front of the wire bonding position, and It is also possible to prevent impurities from entering the chip from the wire.
第１図ａおよびｂは本発明実施例装置の開封平面図およ
び断面図、第２図ａ、ｂは従来例装置の開封状態の平面
図、断面図である。
１・・・・・・リード、２・・・・・・封止樹脂、３・
・・・・・インナーリード部、４・・・・・・ワイヤボ
ンド部、５・・・・・・第３物質層、６・・・・・・ワ
イヤ。
代理人の氏名 弁理士 中尾敏男 ほか１名イー−−１
ハト”
Ｃ−一一フイγ
第２図1A and 1B are an unsealed plan view and a sectional view of the device according to the present invention, and FIGS. 2A and 2B are a plan view and a sectional view of the conventional device in an unsealed state. 1...Lead, 2...Sealing resin, 3.
... Inner lead part, 4 ... Wire bond part, 5 ... Third material layer, 6 ... Wire. Name of agent: Patent attorney Toshio Nakao and 1 other person E-1
Pigeon” C-11F γ Figure 2
Claims (1)
らの侵入不純物と反応しやすい第３物質層を設けたこと
を特徴とする樹脂封止型半導体装置。A resin-sealed semiconductor device characterized in that a third material layer that easily reacts with impurities entering from the outside is provided on a part of the surface of an inner lead in a package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26225986A JPS63115350A (en) | 1986-11-04 | 1986-11-04 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26225986A JPS63115350A (en) | 1986-11-04 | 1986-11-04 | Resin-sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63115350A true JPS63115350A (en) | 1988-05-19 |
Family
ID=17373293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26225986A Pending JPS63115350A (en) | 1986-11-04 | 1986-11-04 | Resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63115350A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9573501B2 (en) | 2012-04-20 | 2017-02-21 | Johnson Controls Technology Company | Vehicle seat |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4915993A (en) * | 1972-06-07 | 1974-02-12 | ||
| JPS61152048A (en) * | 1984-12-26 | 1986-07-10 | Akita Denshi Kk | Semiconductor device |
-
1986
- 1986-11-04 JP JP26225986A patent/JPS63115350A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4915993A (en) * | 1972-06-07 | 1974-02-12 | ||
| JPS61152048A (en) * | 1984-12-26 | 1986-07-10 | Akita Denshi Kk | Semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9573501B2 (en) | 2012-04-20 | 2017-02-21 | Johnson Controls Technology Company | Vehicle seat |
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