JPS63110730A - Drying method for semiconductor wafer - Google Patents

Abstract

PURPOSE:To make it possible to dry plural wafers while they are sticked on a sticking plate and to improve working efficiency, by inserting the sticking plate, on which plural wafers are sticked, into a steam tank in which an organic solvent is heated to generate steam and drying the plural wafers while they are stuck on the sticking plate. CONSTITUTION:A sticking plate 2 on which a plurality of wafers 3 are sticked is inserted into a steam layer 6 which is formed of an organic solvent 4 in a drying tank 1, and the wafers 3 are dried as they are stuck on the sticking plate 2. For example this process is as follows: ten sheets of GaAs wafers 3 of phi 2'' in diameter are disposed on the sticking plate 2 and made to adhere to the plate by the use of wax, and these wafers 3 are polished by the use of a suede type cloth and a polishing liquid of a thorium hypochlorite group and sufficiently rinsed. Successively the plate is inserted into the drying tank 1 and dried for about three minutes in the steam layer 6 of about 400 mm in height, so that good wafers can be obtained without irregularity in drying and contamination.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for drying semiconductor wafers.

[Prior Art] Wafers that have been polished to a mirror-like finish are washed with water to remove the polishing liquid, and then dried. At this time, conventionally, argon gas is sprayed onto each wafer. A method was used to dry the adhering moisture.

[Problems to be Solved by the Invention] As mentioned above, in the conventional wafer drying method, argon gas is sprayed onto each wafer to dry it, which is inefficient, and the scattered water droplets cause a problem in the drying process. There were problems such as stains and stains adhering to the finished wafers, requiring re-cleaning.

An object of the present invention is to provide a semiconductor wafer drying method that improves work efficiency.

[Means for Solving the Problems] The present invention provides a semiconductor wafer drying method for drying a mirror-polished and cleaned wafer, in which a bonding plate to which a plurality of wafers are bonded is heated with a solvent. The wafer is inserted into a steam tank that generates steam, and the plurality of wafers are dried while being attached to the attachment plate by the vapor of the organic solvent, thereby improving work efficiency and achieving the objective. It was measured.

[Function] When processing a wafer into a mirror-like finish, one side of the wafer is glued to an attachment plate, the other side is polished and cleaned, and then dried one by one to finish the wafer. In the method of drying wafers according to the invention, a sticking plate on which a plurality of wafers are stuck is inserted into organic solvent vapor, and the wafers are dried while being stuck to the sticking plate, so it is extremely efficient. Good drying can be achieved.

[Example] Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

FIG. 1 is an explanatory diagram of an embodiment of a steam dryer that implements the method of the present invention.

In the figure, 1 indicates a drying tank. 2 is a pasting plate, 3 is a gallium arsenide (GaAs) wafer, pasting plate 2
is glued with wax. 4 is an organic solvent, 5 is a heater for heating the organic solvent 4, and 6 is a vapor layer of the organic solvent 4. 7 is a cooling coil that adjusts the steam temperature, and 8 is a chuck that holds the attachment plate 2.

In this embodiment, the drying tank 1 has dimensions of 200 mm x 400 mm.
+ m in size, and the attachment plate 2 has a diameter of φ304
It is made of ceramic (Ag203) and has a thickness of t~15ma+. GaA with a diameter of φ2° is attached to this pasting plate 2.
Ten S wafers 3 are lined up and glued together with wax, and the wafers 3 are polished using a suede type cloth and a sodium hypochlorite-based polishing liquid. After thoroughly rinsing with water, they are inserted into the drying tank 1 and heated to a high temperature. Vapor layer 6 of about 4001
By drying the wafer for about 3 minutes in the wafer, a good wafer can be obtained without uneven drying or staining.

In this case, the wax used to bond the wafers has a viscosity of 80c.
If it is more than p, the wafer will not shift during drying.

As described above, by using this embodiment, it is possible to dry a large number of wafers while being attached to the attachment plate, improving work efficiency and contributing to cost reduction.

[Effects of the Invention] According to the present invention, it is possible to provide a semiconductor wafer drying method that improves work efficiency.

[Brief explanation of the drawing]

FIG. 1 is an explanatory diagram of an embodiment of a steam dryer that implements the semiconductor wafer drying method of the present invention. 1: Drying tank, 2: Pasting plate, 3: Wafer, 4 = Organic solvent, 5 Niheater. 1st Round 5: Hee 7

Claims (1)

[Claims] (1) In a semiconductor wafer drying method of drying a mirror-polished and cleaned wafer, a pasting plate with a plurality of wafers pasted is inserted into a steam bath that generates steam by heating an organic solvent; A method for drying semiconductor wafers, comprising drying the plurality of wafers while attached to the attachment plate using vapor of the organic solvent.