CN100453701C - Wet method pattern technology of chrome-nickel alloy thin film - Google Patents
Wet method pattern technology of chrome-nickel alloy thin film Download PDFInfo
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- CN100453701C CN100453701C CNB2005100109749A CN200510010974A CN100453701C CN 100453701 C CN100453701 C CN 100453701C CN B2005100109749 A CNB2005100109749 A CN B2005100109749A CN 200510010974 A CN200510010974 A CN 200510010974A CN 100453701 C CN100453701 C CN 100453701C
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- nickel alloy
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Abstract
The invention discloses the nickel-chromium thin film liquid graphic-arts technique. The technology comprises 2-10% kalii permangana, 30-505 cerous sulfate, 5-11% chlorhydric acid, 5-10% ammoniation ammonia and distilled water. The technology has the advantages of low cost, clear line and high accuracy.
Description
One, technical field
The present invention relates to a kind of imaging technique of realizing the chrome-nickel alloy thin film material, mainly be applicable to the wet method pattern of top electrode chrome-nickel alloy thin film in the infrared eye, also can be used for the wet method pattern of other chrome-nickel alloy thin film.
Two, background technology
In infrared eye, nichrome upper electrode film imaging technique is one of gordian technique in photoelectron, the super large-scale integration field.Based on the infrared eye of ferroelectric membranc, the wet method figure processing with the nickel chromium triangle top electrode occupies very important position in whole ferroelectric membranc focus planardetector preparation technology.For a long time, the trickle imaging technique of this class function film mainly is used in method or wet etching, physics is peeled off technology such as method, the silk screen printing of LASER HEATING scanner uni.Now be example with the dry etching, its main technique flow process: 1, cleaning silicon chip, 2, the growth nickel-chromium thin film, 3, the coating photoresist material, 4, etching, 5, remove photoresist material.
This dry etching also can obtain the measured figure of matter as long as strict conscientious in technological operation.But its shortcoming is conspicuous, dry etching must use expensive etching machine to finish, the price of this etching machine all more than hundreds of thousands of yuan, is in the method etching, is to realize etching by microparticle bombardments such as ion silicon chip surface to be etched in a vacuum cavity.Thereby the meeting that can not keep away rabbit raises the temperature of silicon chip surface; and the photoresist material that is used to protect is a kind of organism of non-refractory; such result makes the photoresist material carbonization; cause in the subsequent handling photoresist material to be difficult to remove clean; finally pollute the surface of nickel chromium triangle top electrode, bring difficulty and the quality that influences device to next procedure.
Three, summary of the invention
The main technical problem to be solved in the present invention and purpose are: according to the deficiency of existing dry etching chrome-nickel alloy thin film imaging technique existence, a kind of new liquid graphic-arts technique is provided, make the graphical product of chrome-nickel alloy thin film of made, low, the no photoetching glue stain of cost, quality increase.For applying of infrared technique made certain contribution.
Main technical schemes of the present invention is: a, in preparation corrosive fluid operation, the configuration proportion of corrosive fluid: potassium permanganate 2-10%, cerous sulfate 30-50%, hydrochloric acid 5-11%, ammonia chloride 5-10%, distilled water.B, in the insulation operation, the corrosive fluid that has prepared is placed beaker, then beaker is placed water-bath, the temperature that keeps beaker internal corrosion liquid guarantees to be in constant temperature relatively in certain temperature among a small circle between 40-90 ℃.C, in corrosion process, the long silicon chip that chrome-nickel alloy thin film is arranged, put into the constant temperature beaker that fills corrosive fluid, soaks taking-up after 1-2 minute, rinse well with deionized water.
The present invention is used to facts have proved: the graphical product of the chrome-nickel alloy thin film of made meets technical requirements, and required cost has only below one of percentage of original technical costs, and pattern precision height, line thickness can reach 3 microns.
Four, description of drawings
Below in conjunction with accompanying drawing, the present invention is described in further detail.
Fig. 1 is a process flow sheet of the present invention.
Fig. 2 is chrome-nickel alloy thin film etching system figure of the present invention.
Fig. 3 is a photoresist material protection chrome-nickel alloy thin film synoptic diagram of the present invention.
Fig. 4 is the product figure of chrome-nickel alloy thin film of the present invention after graphical.
Five, embodiment
With reference to Fig. 1, concrete technical process of the present invention is: A, preparation corrosive fluid, corrosive fluid is formulated as follows: potassium permanganate 2-10%, sulfuric acid decorations 30-50%, hydrochloric acid 5-11%, ammonia chloride 5-10%, distilled water.B, insulation (see figure 2) place beaker 5 with the corrosive fluid 1 that has prepared, and then beaker are placed water-bath 2, and the temperature that keeps beaker internal corrosion liquid guarantees to be in constant temperature relatively in certain temperature among a small circle between 40-90 ℃.C, cleaning silicon chip (substrate), at first silicon chip was cleaned in Ultrasonic Cleaners 5 minutes with acetone, use alcohol then instead and in Ultrasonic Cleaners, clean taking-up after 3 minutes, dry up the residual alcohol of silicon chip surface with nitrogen gun, standby 85 ℃ of drying in oven at last.D, growth nickel-chromium thin film (see figure 3) grow chrome-nickel alloy thin film 8 with the method for magnetron sputtering on silicon chip 9.E, coating photoresist material (see figure 3) on sol evenning machine, are coated in photoresist material 7 on the chrome-nickel alloy thin film 8 uniformly, by photoetching process, required figure are moved on on the photoresist material 7, expose, and the part that does not need to be etched is protected with photoresist.F, corrosion (see figure 2) have the silicon chip 4 of nickel-chromium thin film to the length of last process, put into the constant temperature beaker 5 that fills corrosive fluid, soak taking-up after 1-2 minute, rinse well with deionized water.G, dry up processing, dry up silicon chip with the ammonia rifle.H, remove the photoresist material (see figure 4),, put into acetone and soak to take out after 2-3 minute and dry up, just can obtain the figure of complete display, neat in edge the silicon chip of last process.I, check.
The embodiment one of preparation corrosive fluid in operation A
Potassium permanganate 10%, sulfuric acid decorations 30%, hydrochloric acid 5%, ammonia chloride 5%, distilled water.
Embodiment two
Embodiment three
Potassium permanganate 6%, sulfuric acid decorations 40%, hydrochloric acid 7%, ammonia chloride 10%, distilled water.
More than three embodiment be the corrosive fluids of representative preparation, all can satisfy needs of the present invention, can produce the graphical product of qualified chrome-nickel alloy thin film, other embodiment in ratio range has not just enumerated one by one.
In process B, beaker internal corrosion liquid temp embodiment: remain on 40 ℃, 45 ℃, 50 ℃, 60 ℃, 70 ℃, 80 ℃, 90 ℃, all can satisfy needs of the present invention, can produce the graphical product of qualified chrome-nickel alloy thin film.
With reference to Fig. 2, chrome-nickel alloy thin film etching system of the present invention by: corrosive fluid 1, water-bath 2, warm water 3, longly form by silicon chip 4, beaker 5, the electric furnace 6 of chrome-nickel alloy thin film.
Acetone used in the present invention, alcohol are the general industrial clean-out system.Sol evenning machine, baking oven, Ultrasonic Cleaners belong to the common equipment of general photoetching industry.
Claims (4)
1, a kind of wet method pattern method of chrome-nickel alloy thin film, contain operation: C cleaning silicon chip, D growth nickel-chromium thin film, E coating photoresist material, F burn into G dry up processing, H removes photoresist material, I check, it is characterized in that:
A, in operation A preparation corrosive fluid, the configuration proportion of corrosive fluid: potassium permanganate 2-10%, cerous sulfate 30-50%, hydrochloric acid 5-11%, ammonia chloride 5-10%, distilled water;
B, in process B insulation, the corrosive fluid (1) that has prepared is placed beaker (5), then beaker is placed water-bath (2), the temperature that keeps beaker internal corrosion liquid guarantees to be in constant temperature relatively in certain temperature among a small circle between 40-90 ℃;
C, in operation F corrosion, the long silicon chip (4) that chrome-nickel alloy thin film is arranged, put into the constant temperature beaker (5) that fills corrosive fluid, soaks taking-up after 1-2 minute, rinse well with deionized water.
2, the wet method pattern method of chrome-nickel alloy thin film according to claim 1, it is characterized in that: in operation A, corrosive fluid is mixed with: potassium permanganate 10%, cerous sulfate 30%, hydrochloric acid 5%, ammonia chloride 5%, distilled water.
3, the wet method pattern method of chrome-nickel alloy thin film according to claim 1, it is characterized in that: in operation A, corrosive fluid is mixed with: potassium permanganate 2%, cerous sulfate 50%, hydrochloric acid 11%, ammonia chloride 8%, distilled water.
4, the wet method pattern method of chrome-nickel alloy thin film according to claim 1, it is characterized in that: in operation A, corrosive fluid is mixed with: potassium permanganate 6%, cerous sulfate 40%, hydrochloric acid 7%, ammonia chloride 10%, distilled water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100109749A CN100453701C (en) | 2005-08-22 | 2005-08-22 | Wet method pattern technology of chrome-nickel alloy thin film |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2005100109749A CN100453701C (en) | 2005-08-22 | 2005-08-22 | Wet method pattern technology of chrome-nickel alloy thin film |
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| CN1920097A CN1920097A (en) | 2007-02-28 |
| CN100453701C true CN100453701C (en) | 2009-01-21 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101156274B1 (en) * | 2007-07-09 | 2012-06-13 | 스미토모 긴조쿠 고잔 가부시키가이샤 | Process for producing printed wiring board and printed wiring board produced by the production process |
| KR101156414B1 (en) * | 2007-09-10 | 2012-06-13 | 스미토모 긴조쿠 고잔 가부시키가이샤 | Process for producing printed wiring board and printed wiring board produced by the production process |
| US8486281B2 (en) * | 2009-10-05 | 2013-07-16 | Kesheng Feng | Nickel-chromium alloy stripper for flexible wiring boards |
| CN103107085B (en) * | 2013-01-31 | 2016-02-10 | 电子科技大学 | A kind of dry etch process of NiCr film |
| CN105039984B (en) * | 2015-06-30 | 2018-01-26 | 电子科技大学 | A kind of improved NiCr alloys wet-etching technology |
| CN108614015B (en) * | 2018-05-23 | 2020-11-13 | 哈尔滨工程大学 | Manufacturing method of catalysis and thermal conduction integrated gas sensor, sensor and working method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1249533A (en) * | 1998-09-25 | 2000-04-05 | 住友电气工业株式会社 | Epitaxial wafer, its mfg method and method for surficial cleaning of compound semiconductor substrate |
| JP2003031402A (en) * | 2001-05-11 | 2003-01-31 | Gunze Ltd | Thin film resistance element and substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1249533A (en) * | 1998-09-25 | 2000-04-05 | 住友电气工业株式会社 | Epitaxial wafer, its mfg method and method for surficial cleaning of compound semiconductor substrate |
| JP2003031402A (en) * | 2001-05-11 | 2003-01-31 | Gunze Ltd | Thin film resistance element and substrate |
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