CN106547179A - A kind of effective method for removing photoresistance - Google Patents
A kind of effective method for removing photoresistance Download PDFInfo
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- CN106547179A CN106547179A CN201610949917.5A CN201610949917A CN106547179A CN 106547179 A CN106547179 A CN 106547179A CN 201610949917 A CN201610949917 A CN 201610949917A CN 106547179 A CN106547179 A CN 106547179A
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- substrate
- photoresistance
- blocking solution
- rinsed
- effective method
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/428—Stripping or agents therefor using ultrasonic means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
Abstract
A kind of effective method for removing photoresistance, comprises the steps：（1）Substrate with photoresistance is kept flat, dipping blocking solution carries out surface wipes；（2）Substrate after wiping is placed in blocking solution and is rinsed, after the completion of once rinsing, carry out ultrasonic immersion, then carry out secondary rinsing；（3）Substrate is put in acetone and is rinsed, rinsed in being then placed on ethanol solution again；（4）After substrate is washed, dried up using nitrogen or spinner is spin-dried for.The method is by carrying out pad process to substrate surface, then by the cleaning of blocking solution, photoresistance can thoroughly be removed, it is to avoid the long-time ultrasound immersion of the multistage blocking solution in traditional removing photoresistance technique, largely reduce to substrate structural damage itself, step is easy, takes less, has accomplished removal photoresistance rapidly and efficiently completely, the large-scale production of short period can be realized, the substrate processed by the present invention, clean surface, noresidue photoresistance.
Description
Technical field
The present invention relates to a kind of be used to remove in the saturating of LED (light emitting diode, Light Emitting Diode) chip
In the manufacturing process of prescribed electrode and metal electrode figure, the method for used photoresistance, belongs to LED wafer manufacture technology field.
Background technology
LED has the advantages that energy-efficient, pollution-free, life-span length is widely recognized as forth generation lighting source.In LED core
In the whole manufacturing process of piece, the making of transparency electrode and metal electrode figure usually uses photoresistance to complete, and completes electrode
Photoresistance afterwards removes an important step for inevitably becoming LED wafer manufacturing process.
Photoresistance (photoresist), generally also referred to as photoresist, are widely used in industry as a kind of light-sensitive material
In processing procedure, especially in LED industry, photoresistance is the indispensable raw material of photoetching technique, is usually fabricated in wafer surface coating
Layer.The photoresistance for using at present, is divided into two classes, positive photoresistance (positive photoresist) and negative sense photoresistance
(negativi photoresist).The characteristic of positive photoresistance is that the part being irradiated by light can be dissolved in photoresistance developer solution, and is not had
There is the part being irradiated to not to be dissolved in photoresistance developer solution；And negative sense photoresistance characteristic is on the contrary, its part for being irradiated by light
Photoresistance developer solution will not be dissolved in, the part not being irradiated by light can be dissolved in photoresistance developer solution on the contrary.In general, positive photoresistance
Price is costly and resolution is higher；And negative sense photoresist price is relatively relatively inexpensive, resolution is relatively low, removes photoresist relatively easy.
In LED manufacturing process, the main metal electrode being used in LED chip manufacture of photoresistance or transparency electrode evaporation are shelled
In processing procedure, The book of Changes does not use the method for etching to make electrode pattern to the metal material used due to LED electrode, so usually
Using peel off (Lift-off) technology, obtain projection photoresist layer, make metal during evaporation will not continuous distributed in photoresistance
On, then the mode cleaned by glue is gone using photoresistance, the metal on photoresistance upper strata and photoresistance layer segment are peeled off simultaneously, it is complete
Into the manufacturing process of metal electrode figure.In addition, needing to carry out the clear of acid-base solution after the making of the metal electrode that completes
When washing, photoresistance is needed to carry out protection operation as protective layer.At present, the removal of photoresistance, most common method are gone for multi-stage light
Glue by high-temperature heating carry out long-time immersion remove, in the removal process of photoresistance, conventional method take equipment and materials compared with
Many, the photoresistance of consumption goes glue relatively costly, less efficient, and when photoresistance is removed, there is part photoresistance is especially non-ascending a height
Photoresistance in plane removes halfway drawback, affects the photoelectric properties and yield of product.
Chinese patent literature CN104882364 A proposes a kind of effective method for removing photoresistance, the main skill of the method
Art scheme is：The chip for removing photoresistance will be needed to be placed in light blocking solution first and soak 30-60min, then dried up, and will
Chip after drying up takes dry method photoresistance in being placed on plasma apparatus.The method is mainly by the removing photoresistance of enough time
Immersion is steeped and aids in certain plasma clean to reach the effect thoroughly removed photoresist, but whole process is time-consuming longer, effect
Rate is low, consumes the more cost that removes photoresist of a relatively high.
Chinese patent document CN102331689 A proposes a kind of method and apparatus of removing photoresistance, is by with photoresistance
Substrate is initially positioned in glue soaks, the substrate after immersion is carried out into cooling then until base reservoir temperature less than blocking solution with
Substrate is finally cleaned up by the minimum temperature that substrate reacts using water.The low of substrate is mainly used in the invention
Warm conditions warrant is washed under the conditions of water and blocking solution are nonreactive, reaches the effect of removing photoresistance and clean surface, but
It is more long for the time that the cooling of substrate needs, whole technological process realization is time-consuming longer, or is equipped with special cooling to set
The standby cost that increased removing photoresistance simultaneously.
To sum up, it is necessary to study and a kind of can efficiently remove the relatively low process of photoresistance and consuming cost.
The content of the invention
For the relatively costly of existing traditional photoresistance removal technology presence, process is loaded down with trivial details, less efficient deficiency, the present invention
A kind of low cost, efficiency high are provided, the method for thoroughly effectively removing photoresistance is removed.
The method of effective removal photoresistance of the present invention, comprises the steps：
(1) blocking solution is wiped：Substrate with photoresistance is kept flat, dipping blocking solution carries out surface wipes；
The step can wipe most photoresistances of substrate surface.
(2) blocking solution is rinsed and ultrasound：Substrate after wiping is placed in blocking solution and is rinsed, once rinsed
After the completion of carry out ultrasonic immersion, then carry out secondary rinsing；
(3) acetone and ethanol are rinsed：Substrate is put in acetone and is rinsed, rinsed in being then placed on ethanol solution again
Wash.
(4) wash and be dried：After substrate is washed, dried up using nitrogen or spinner is spin-dried for.
The material that blocking solution is dipped in the step (1) is nanoscale foam, absorbent cotton, long-staple cotton cotton balls or fur
Brush, preferred nanoscale foam.
The material wiped by blocking solution is dipped in the present invention extremely important, both required that the material compactness was suitable, hard
Degree is suitable, then guarantees to complete under conditions of physics wipes removal photoresistance and can not cause outward appearance to the other structures of substrate
Injury, through applicant's research and many experiments find the cotton balls that nanoscale science and technology foam, absorbent cotton and long-staple cotton make and
Soft hairbrush etc. disclosure satisfy that the requirement, and this different materials, can be in physics because of the own characteristic of compact structure and hardness etc.
It is properly completed during wiping operation and removes photoresist requirement and substrate other structures are not caused with the injury of the outward appearances such as scuffing.Applicant enters one
Step research finds that wiping by physics and being removed photoresist, not only planar substrates is had remove photoresist well effect, especially to surface not
Smooth substrate removing photoresistance effect preferably, is soaked by traditional multistage blocking solution ultrasound for irregular substrate and is difficult to accomplish
Thoroughly remove photoresist, can there is big substantial amounts of photoresistance residual at the edge of uneven main plot, and the use certain material in the present invention is carried out
Physics pad, is fully able to accomplish the thorough removal of fringe region, makes whole LED make yield and greatly promotes.
Certain material in the present invention used in step (1), is not limited only to above-mentioned nanoscale science and technology foam, degreasing
Cotton balls and soft hairbrush that cotton and long-staple cotton make, every material that disclosure satisfy that aforesaid operations requirement, in present invention power
In limit.
The temperature of the blocking solution in the step (1) and step (2) is 45 DEG C -95 DEG C.
The process that rinses in the step (2) is：Substrate is immersed in blocking solution and is at least rocked 5 times, then again will
Substrate is inverted in being immersed in blocking solution and at least rocks 5 times.Jitter time is -90 seconds 5 seconds.Rock number of times to be preferably 5-60 time.
Supersonic frequency in the step (2) is 10Khz-50Khz.
Ultrasonic time in the step (2) is -5 minutes 1 minute.
In the step (3), the temperature of acetone or ethanol solution is normal temperature or less than acetone or ethanol solution
Boiling point, preferred temperature are normal temperature.
Rinsing in the step (3) be substrate is immersed in into acetone or ethanol solution at least rock 5 times, then
Again substrate is inverted to be immersed in blocking solution and at least rocks 5 times.Jitter time is -90 seconds 5 seconds.Rock number of times and be preferably 5-60
It is secondary.
In the step (4), washing time is -15 minutes 3 minutes, described nitrogen gas purity >=99.999%, the nitrogen
Pressure is 0.1-0.3MPa, to ensure the pure of nitrogen and use safety.The further preferably nitrogen is 5N nitrogen.
Operation is extremely important for rinsing in step (2) of the present invention and (3), and applicant is had found through research and many experiments,
Substrate surface after wiping through physics, most of photoresistance removed (and by physics wipe can destroy light completely
Resistance counterdie), remaining a small amount of photoresistance rapidly and efficiently thoroughly can be removed after operating through rinsing in step (2) and (3), this
Rinse operation to be substituted using immersion in bright, the photoresistance Jing after wiping across, if after immersion treatment, having very big
Probability can the adhesion of generation area property and more difficult removal.
The invention has the characteristics that：
1. by the present invention in that carrying out pad process to substrate surface with certain material, then by the clear of blocking solution
Wash, can accomplish thoroughly to remove photoresistance.
2. the long-time ultrasound immersion of the multistage blocking solution in traditional removing photoresistance technique, process time present invention, avoiding
Shorten, largely reduce to substrate structural damage itself.
3. step of the present invention is succinct, and whole removing photoresistance technique elapsed time is considerably less, has accomplished going rapidly and efficiently completely
Except photoresistance, the large-scale production of short period can be realized, the substrate processed by the present invention, clean surface, noresidue photoresistance.
4. the present invention is applied to the removing photoresistance process of all of LED substrate, especially, for the substrate of surface irregularity is gone
Glue effect is particularly evident.
Description of the drawings
Fig. 1 is the flow chart of the method for effectively removing photoresistance of the invention.
Fig. 2 is covered with the schematic diagram of the smooth substrate of photoresistance.
Fig. 3 is covered with the schematic diagram of the out-of-flatness substrate of photoresistance.
In figure：1. substrate, 2. photoresistance.
Specific embodiment
Fig. 1 gives the flow process of the method for effectively removing photoresistance of the invention, and what Fig. 2 was given is covered with the smooth base of photoresistance
Bottom, Fig. 3 are covered with the out-of-flatness substrate of photoresistance.
(1) blocking solution is wiped
Substrate 1 with photoresistance is kept flat, using materials such as nanoscale foam, absorbent cotton, long-staple cotton cotton balls or banister brush
(preferred nanoscale bubble) cotton dips and is heated to 45 DEG C -95 DEG C of blocking solution the surface of substrate 1 is wiped, and the step can be with
Wipe most photoresistances of substrate surface.
(2) blocking solution is rinsed and ultrasound
Substrate after wiping is placed on and is heated to carry out rinsing in 45 DEG C -95 DEG C of blocking solution for the first time, rinsed
Cheng Wei：Substrate is immersed in blocking solution and is at least rocked 5 times, jitter time is -90 seconds 5 seconds；Then again substrate is inverted and soaks
At least do not rock 5 times in blocking solution, jitter time is -90 seconds 5 seconds.Rock number of times to be preferably 5-60 time.Rinse for the first time
After the completion of carry out ultrasonic immersion (in ultrasonic wave soak), supersonic frequency is 10Khz-50Khz, ultrasonic soak time is 1 minute-
5 minutes.
Then rinsed for the second time, rinsed process and first time.
(3) acetone and ethanol are rinsed
Substrate is put in the acetone of room temperature to boiling temperature (preferred temperature is normal temperature) to rinse, specifically substrate is soaked
At least do not rock 5 times in acetone or ethanol solution, then be inverted to be immersed in blocking solution by substrate again and at least rock 5
Secondary, jitter time is -90 seconds 5 seconds.Rock number of times to be preferably 5-60 time.
Then rinse in being placed on the ethanol solution of room temperature to boiling temperature again, detailed process is rinsed with acetone
Unanimously.
The concentration of acetone is more than 99.5%, and density is 0.78-0.80g/ml, the concentration of absolute ethyl alcohol be 99.7% with
On, density is 0.78-0.80g/ml.
(4) wash and be dried：Substrate is washed -15 minutes 3 minutes, is then dried up using nitrogen or spinner is revolved
It is dry.Nitrogen gas purity >=99.999%, pressure are 0.1-0.3MPa, to ensure the pure of nitrogen and use safety.Preferably use 5N
Nitrogen.
The removing photoresistance removed after wiping step of 1 method of the present invention removing photoresistance and embodiment 2 by the following examples
The substrate that the conventional multi-level blocking solution immersion process of method and embodiment 3 is given to Fig. 3 carries out removing photoresistance Contrast on effect, says
Bright beneficial effects of the present invention.
Embodiment 1
The present embodiment 1 presses the inventive method removing photoresistance.
(1) blocking solution is wiped
By keeping flat with the substrate of photoresistance, dipped using nanoscale foam and be heated to 60 DEG C of blocking solution and carry out surface wiping
Wipe.
(2) blocking solution is ultrasonic and rinses
The substrate that wiping is completed is placed on and is heated to be rinsed in 60 DEG C of blocking solution, once rinsed and complete laggard
Row large power supersonic ultrasonic power 30Khz soaks 1min, carries out secondary rinsing again.
It is all to rinse operation and be：Substrate is respectively rocked 20 times up and down, upper and lower time control rinses process in 10-30sec
Middle substrate ensures to be immersed in below blocking solution liquid level.
(3) acetone and ethanol are rinsed
Substrate is put in normal temperature acetone and is rinsed, after the completion of acetone is rinsed, carried out in being placed on normal temperature ethanol solution
Rinse.It is all to rinse operation and be：Substrate is respectively rocked 30 times up and down, upper and lower time control in 20-40sec, base during rinsing
Bottom ensures to be immersed in below blocking solution liquid level.
(4) wash and be dried
Substrate is carried out into washing 7 minutes, is dried up using nitrogen.
Embodiment 2
The present embodiment is to eliminate step (1) with the difference of embodiment 1, i.e., wipe without blocking solution.
Embodiment 3
The present embodiment carries out removing photoresistance using conventional multi-level blocking solution soaking technology method, comprises the steps：
(1) substrate with photoresistance is placed in the 1# blocking solutions for be heated to 60 DEG C and soaks 30min, in immersion process
Ultrasound is carried out, ultrasonic power is 30Khz.
(2) 30min is soaked in placing the substrate above the 2# blocking solutions for be heated to 60 DEG C, ultrasound in immersion process, is carried out,
Ultrasonic power is 30Khz.
(3) substrate is placed in acetone soln carries out immersion 10min, removes residual blocking solution.
(4) substrate is placed in ethanol solution carries out immersion 10min.
(5) substrate is carried out into washing 10min.
(6) chip that washing in step (5) is completed is dried using nitrogen.
The substrate that above-described embodiment is obtained carries out basis of microscopic observation substrate surface removing residual glue situation, obtains result as follows
Shown in table：
| Condition | Substrate quantity/piece | Incomplete removing photoresistance quantity/piece | Incomplete removing photoresistance ratio |
| Embodiment 1 | 5000 | 0 | 0.00% |
| Embodiment 2 | 5000 | 52 | 1.04% |
| Embodiment 3 | 5000 | 37 | 0.74% |
By 1 Data Comparison of above-mentioned table, remove wiping step and Conventional processing methods exist certain proportion appear as it is thorough
Bottom removes the situation of photoresistance, and is removed photoresistance using the inventive method, can accomplish thoroughly removal completely.
Claims (9)
1. a kind of effective method for removing photoresistance, is characterized in that, comprise the steps：
（1）Blocking solution is wiped：Substrate with photoresistance is kept flat, dipping blocking solution carries out surface wipes；
（2）Blocking solution is rinsed and ultrasound：Substrate after wiping is placed in blocking solution and is rinsed, once rinsed and complete
After carry out ultrasonic immersion, then carry out secondary rinsing；
（3）Acetone and ethanol are rinsed：Substrate is put in acetone and is rinsed, rinsed in being then placed on ethanol solution again；
（4）Wash and be dried：After substrate is washed, dried up using nitrogen or spinner is spin-dried for.
2. effective method for removing photoresistance according to claim 1, is characterized in that, the step（1）In dip removing photoresistance
The material of liquid is nanoscale foam, absorbent cotton, long-staple cotton cotton balls or banister brush.
3. effective method for removing photoresistance according to claim 1, is characterized in that, the step（1）And step（2）In
The temperature of blocking solution is 45 DEG C -95 DEG C.
4. effective method for removing photoresistance according to claim 1, is characterized in that, the step（2）In rinse process
For：Substrate is immersed in blocking solution and is at least rocked 5 times, then be inverted to be immersed in blocking solution by substrate again and at least rock
5 times.
5. effective method for removing photoresistance according to claim 4, is characterized in that, the jitter time is -90 seconds 5 seconds,
Number of times is rocked for 5-60 time.
6. effective method for removing photoresistance according to claim 1, is characterized in that, the step（2）In supersonic frequency
For 10Khz-50Khz, ultrasonic time is -5 minutes 1 minute.
7. effective method for removing photoresistance according to claim 1, is characterized in that, the step（3）Middle acetone is anhydrous
The temperature of ethanol solution is for normal temperature or less than acetone or the boiling point of ethanol solution.
8. effective method for removing photoresistance according to claim 1, is characterized in that, the step（3）In rinse be by
Substrate is at least rocked in being immersed in acetone or ethanol solution 5 times, is then inverted substrate again and is immersed in blocking solution extremely
5 times are rocked less.
9. effective method for removing photoresistance according to claim 1, is characterized in that, the step（4）Middle washing time is 3
- 15 minutes minutes, described nitrogen gas purity >=99.999%, the nitrogen pressure are 0.1-0.3MPa.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610949917.5A CN106547179A (en) | 2016-11-02 | 2016-11-02 | A kind of effective method for removing photoresistance |
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| CN201610949917.5A CN106547179A (en) | 2016-11-02 | 2016-11-02 | A kind of effective method for removing photoresistance |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106964609A (en) * | 2017-05-08 | 2017-07-21 | 武汉华星光电技术有限公司 | A kind of clean method and cleaning device of coating machine pipeline |
| CN107665810A (en) * | 2017-09-11 | 2018-02-06 | 中国科学院微电子研究所 | The stripping means of nano-grade size photoresist on a kind of semiconductor |
| CN109541896A (en) * | 2018-11-21 | 2019-03-29 | 合肥新汇成微电子有限公司 | A kind of novel removal photoresist mode in etch process |
| CN109946929A (en) * | 2019-04-12 | 2019-06-28 | 江苏汇成光电有限公司 | A kind of IC chip photoresist removal device and technique |
| CN110187614A (en) * | 2019-05-13 | 2019-08-30 | 深圳市华星光电技术有限公司 | Photoresistive striping process and optical resistance-stripping device |
| CN111045300A (en) * | 2019-11-14 | 2020-04-21 | 上海交通大学 | Method for removing SU-8 negative photoresist by plasma etching in cooperation with wet process assistance |
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Application publication date: 20170329 |