CN107665810A - The stripping means of nano-grade size photoresist on a kind of semiconductor - Google Patents
The stripping means of nano-grade size photoresist on a kind of semiconductor Download PDFInfo
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- CN107665810A CN107665810A CN201710810781.4A CN201710810781A CN107665810A CN 107665810 A CN107665810 A CN 107665810A CN 201710810781 A CN201710810781 A CN 201710810781A CN 107665810 A CN107665810 A CN 107665810A
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- thin piece
- acetone soln
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- semiconductor slice
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
Abstract
The invention discloses a kind of stripping means of nano-grade size photoresist on semiconductor, including：Metallized semiconductor slice, thin piece is soaked in the first acetone soln of normal temperature；Metallized semiconductor slice, thin piece after the immersion of the first acetone soln of normal temperature terminates is positioned in the second acetone soln, and the metallized semiconductor slice, thin piece being placed in the second acetone soln cleaned with the first power ultrasonic；It will be soaked in the tri acetylacetonate solution of metallized semiconductor slice, thin piece after the heating after the first power ultrasonic settles accounts beam；Metallized semiconductor slice, thin piece after the immersion of tri acetylacetonate solution terminates is positioned in the 4th acetone soln, and the metallized semiconductor slice, thin piece being placed in the 4th acetone soln is cleaned with the second power ultrasonic more than the first power ultrasonic, to remove the photoresist of nano-grade size on metallized semiconductor slice, thin piece.The present invention solves the technical problem of the unexposed photoresist residual in nanoscale size structure.
Description
Technical field
The present invention relates to a kind of stripping side of nano-grade size photoresist in field of semiconductor manufacture, more particularly to semiconductor
Method.
Background technology
In the last few years, as the continuous improvement to micro-nano optics attention rate, the manufacture of micro-nano optical element also obtain
The development advanced by leaps and bounds.Lift-off technology is that through exposure and development and after deposited metal, unexposed photoresist is gone in photoresist
A kind of technology removed.In the past traditional stripping technology is in the line width for large scale (micron order), its photoresist not being exposed
Still it is easier to what is removed at normal temperatures, but when line width as low as nanoscale, traditional stripping technology can not remove unexposed
Photoresist, can exist in nanoscale size structure unexposed photoresist residual.
The content of the invention
The embodiment of the present invention solves nanometer by providing the stripping means of nano-grade size photoresist on semiconductor a kind of
The technical problem of unexposed photoresist residual in level dimensional structure.
The stripping means of nano-grade size photoresist on a kind of semiconductor provided in an embodiment of the present invention, including：
Metallized semiconductor slice, thin piece is soaked in the first acetone soln of normal temperature；
The two the third will be positioned over by the metallized semiconductor slice, thin piece that the first acetone soln of the normal temperature is soaked after terminating
In ketone solution, and the metallized semiconductor slice, thin piece being placed in second acetone soln is carried out clearly with the first power ultrasonic
Wash；
By the tri acetylacetonate of the metallized semiconductor slice, thin piece after first power ultrasonic settles accounts beam after the heating
Soaked in solution；
Metallized semiconductor slice, thin piece after tri acetylacetonate solution immersion terminates is positioned over the 4th acetone soln
In, and with the second power ultrasonic more than the first power ultrasonic to the plating metal half that is placed in the 4th acetone soln
Conductor slice, thin piece is cleaned, to remove the photoresist of nano-grade size on the metallized semiconductor slice, thin piece.
Optionally, described the step of being soaked metallized semiconductor slice, thin piece in the first acetone soln of normal temperature, bag
Include：
The metallized semiconductor slice, thin piece is fixed on the first bracket；
The first acetone that metallized semiconductor slice, thin piece immersion is equipped with to the normal temperature by first bracket is molten
Soaked in the container of liquid, wherein, the total duration soaked in the first acetone soln of the normal temperature is 6~8 hours.
Optionally, it is described with the first power ultrasonic to the metallized semiconductor piece that is placed in second acetone soln
The step of son is cleaned, including：
The metallized semiconductor slice, thin piece is fixed on the second bracket；
Metallized semiconductor after terminating will be soaked by the first acetone soln of the normal temperature by second bracket
Slice, thin piece, which immerses, to be equipped with the container of second acetone soln；
The container for being equipped with the metallized semiconductor slice, thin piece and second acetone soln is placed in supersonic wave cleaning machine
In；
The supersonic wave cleaning machine is worked 5~10 minutes with first power ultrasonic, partly to be led to the plating metal
Body slice, thin piece carries out ultrasonic wave cleaning.
Optionally, the metallized semiconductor slice, thin piece by after first power ultrasonic settles accounts beam is after the heating
Tri acetylacetonate solution in the step of being soaked, including：
The metallized semiconductor slice, thin piece is fixed on the 3rd bracket；
The metallized semiconductor slice, thin piece after first power ultrasonic settles accounts beam is soaked by the 3rd bracket
Enter and soaked in the container of the tri acetylacetonate solution after being equipped with the heating, wherein, the tri acetylacetonate after the heating
The total duration soaked in solution is 10~30 minutes.
Optionally, second power ultrasonic with more than the first power ultrasonic is molten to being placed in the 4th acetone
The step of metallized semiconductor slice, thin piece in liquid is cleaned, including：
The metallized semiconductor slice, thin piece is fixed on the 4th bracket；
Plating metal after the tri acetylacetonate solution immersion after the heating is terminated by the 4th bracket is partly led
Body slice, thin piece, which immerses, to be equipped with the container of the 4th acetone soln；
The container for being equipped with the metallized semiconductor slice, thin piece and the 4th acetone soln is placed in supersonic wave cleaning machine
In；
The supersonic wave cleaning machine is worked 10~15 minutes with second power ultrasonic, partly to be led to the plating metal
Body slice, thin piece carries out ultrasonic wave cleaning.
Optionally, the metallized semiconductor slice, thin piece is specially：There is the plating metal of adhesion layer between the coat of metal and substrate
Semiconductor slice, thin piece.
Optionally, the temperature of the tri acetylacetonate solution after the heating is specially 70~90 DEG C.
Optionally, the concentration of first acetone soln, the concentration of second acetone soln, the tri acetylacetonate solution
Concentration and the concentration of the 4th acetone soln be more than or equal to 99.5%.
Optionally, the power of first power ultrasonic is specially 5~15W, the power of second power ultrasonic
Specially 80~90W.
The one or more technical schemes provided in the embodiment of the present invention, have at least the following technical effects or advantages：
By the way that metallized semiconductor slice, thin piece is soaked in the first acetone soln of normal temperature；With the first power ultrasonic
The process that ripple is cleaned to the metallized semiconductor slice, thin piece being placed in the second acetone soln, makes on metallized semiconductor slice, thin piece
The photoresist of large area unexposed area peels off, photoresist difficult for drop-off in only remaining nano-scale, then after being heated
Acetone soln in soaked, make acetone soln be easier to enter the minimum photoresist area not being exposed so as to high temperature
Domain, finally carry out with the second power ultrasonic more than the first power ultrasonic to the plating metal that is placed in the 4th acetone soln
The process that semiconductor slice, thin piece is cleaned, so as to which high-power ultrasonic glass enables acetone soln more successfully to small scale structures
The photoresist of interior unexposed area is dissolved, so as to smoothly get rid of the unexposed photoresist in nano-scale, therefore,
The stripping of the high efficiency, high quality of the photoresist of nano-grade size unexposed area on slice, thin piece is realized, with low energy loss pair
It is clean to there are whole photoresist lift offs on the semiconductor of nano-grade size photoresist.
By first having carried out being soaked in acetone soln at normal temperatures；With the first power ultrasonic to being placed in the two the third
Metallized semiconductor slice, thin piece in ketone solution is cleaned, to remove the photoresist of the unexposed area in large area, accordingly, it is capable to
The time of the immersion of subsequent high temperature acetone soln and high-power ultrasonic cleaning is reduced, so as to reduce energy loss, reduces cost,
And the infringement very little to component structure.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing of offer obtains other accompanying drawings.
Fig. 1 is the schematic flow sheet of photoresist stripping means on nano-grade size semiconductor in the embodiment of the present invention；
Fig. 2 is the schematic diagram of step S1 in Fig. 1；
Fig. 3 is the schematic diagram of step S2 in Fig. 1；
Fig. 4 is the schematic diagram of step S3 in Fig. 1；
Fig. 5 is the schematic diagram of step S4 in Fig. 1.
Embodiment
The embodiment of the present invention solves nanometer by providing the stripping means of nano-grade size photoresist on semiconductor a kind of
The technical problem of unexposed photoresist residual in level dimensional structure, general thought are：
First cleaned with the ultrasonic wave of the immersion of the acetone soln of normal temperature and low-power, then carry out high temperature acetone soln immersion and
High-power ultrasonic wave cleaning, so as to be realized with low energy loss to existing on the semiconductor of nano-grade size photoresist all
Photoresist cleans up.
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
Part of the embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art
The every other embodiment obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
With reference to shown in 1~Fig. 5 of figure, photoresist stripping means on nano-grade size semiconductor provided in an embodiment of the present invention,
Comprise the following steps：
S1, metallized semiconductor slice, thin piece 1 soaked in the first acetone soln of normal temperature；
S2, the two the third will be positioned over by the metallized semiconductor slice, thin piece 1 that the first acetone soln of normal temperature is soaked after terminating
In ketone solution, and the metallized semiconductor slice, thin piece 1 being placed in the second acetone soln is cleaned with the first power ultrasonic；
S3, by the tri acetylacetonate of metallized semiconductor slice, thin piece 1 after the heating after the first power ultrasonic settles accounts beam
Soaked in solution；
S4, will by tri acetylacetonate solution soak terminate after metallized semiconductor slice, thin piece 1 be positioned over the 4th acetone soln
In, and with the second power ultrasonic more than the first power ultrasonic to the metallized semiconductor that is placed in the 4th acetone soln
Slice, thin piece 1 is cleaned, to remove the photoresist of nano-grade size on metallized semiconductor slice, thin piece 1.
It should be noted that the metallized semiconductor slice, thin piece 1 in the present embodiment step S1~S4 is specifically by electron beam
The semi-finished product of unexposed photoresist to be stripped prepared by the semiconductor technologies such as photoetching, development, magnetron sputtering or evaporation coating, its
In, metallized semiconductor slice, thin piece 1 is made up of the coat of metal of substrate, unexposed photoresist and deposition, the coat of metal and lining
There is adhesion layer between bottom.And the unexposed photoresist of nano-grade size line width is included in unexposed photoresist to be stripped, also
Can have the unexposed photoresist of nano-grade size line width and the unexposed photoresist more than nano-grade size line width simultaneously.
The coat of metal can be gold, silver；The adhesion layer having between the coat of metal and substrate can be such as titanium or chromium, it is to be stripped
The photoresist of nanostructure size can be tens nanometers to hundreds of nanometers.
Below, enter with reference to the stripping means of nano-grade size photoresist on the semiconductor that Fig. 1~Fig. 5 is provided the present embodiment
Row more detailed description：
First, step S1 is performed:Metallized semiconductor slice, thin piece 1 is soaked in the first acetone soln of normal temperature.
In one embodiment, include with reference to figure 2, step S1：Metallized semiconductor slice, thin piece 1 is fixed on the first bracket 2,
Metallized semiconductor slice, thin piece 1 is immersed in the container 3 for the first acetone soln for being equipped with normal temperature by the first bracket 2 and soaked
Bubble, wherein, the total duration soaked in the first acetone soln of normal temperature is 6~8 hours.
It should be noted that normal temperature is current environmental temperature, and without being controlled to current environmental temperature.
In specific implementation process, the total duration soaked in the first acetone soln of normal temperature can be 6 hours, 6.5 small
When, 7 hours, 7.5 hours, 8 hours.
Specifically, metallized semiconductor slice, thin piece 1 is fixed on the first bracket 2 with edge-on or handstand.
After step S1, step S2 is continued executing with：Will be gold-plated after the immersion of the first acetone soln of normal temperature terminates
Category semiconductor slice, thin piece 1 is positioned in the second acetone soln, and with the first power ultrasonic to being placed in the second acetone soln
Metallized semiconductor slice, thin piece 1 is cleaned.
In one embodiment, with reference to shown in figure 3, step S2 includes：Metallized semiconductor slice, thin piece 1 is fixed on the second bracket
On 4；Metallized semiconductor slice, thin piece 1 after the immersion of the first acetone soln of normal temperature terminates is immersed by appearance by the second bracket 4
It is equipped with the container 5 of the second acetone soln；The container 5 for being equipped with the acetone soln of metallized semiconductor slice, thin piece 1 and second is placed in
In supersonic wave cleaning machine 6；Supersonic wave cleaning machine 6 is worked 5~10 minutes with the first power ultrasonic, with to metallized semiconductor piece
Son 1 carries out ultrasonic wave cleaning.
Specifically, metallized semiconductor slice, thin piece 1 is fixed on the second bracket 4 with edge-on or handstand.
In specific implementation process, time that supersonic wave cleaning machine 6 is worked with the first power ultrasonic can be 5 minutes,
Or 6 minutes or 7 minutes or 8 minutes or 9 minutes or 10 minutes.And housed in supersonic wave cleaning machine device 6
There is deionized water.
Specifically, with reference to step S1 any embodiment, the power of the first power ultrasonic is specially 5~15W.Than
Such as, the first power ultrasonic could be arranged to 5W, 6W, 7W, 8W, 9W, 10W.
In specific implementation process, the second acetone soln can continue to use the first acetone soln used in step S1, also may be used
Think original clean acetone soln.
By as above step S1~S2, realize and immersion is carried out in the acetone soln of normal temperature large area can be made unexposed
The photoresist in region easily peels off, and carrying out the ultrasonic wave of low-power after immersion again in the acetone soln of normal temperature, peel off just can be by
The photoresist lift off of large area unexposed area is clean, reduces energy consumption again.
Then, step S3 is performed：Metallized semiconductor slice, thin piece 1 after the first power ultrasonic settles accounts beam is being heated
Soaked in tri acetylacetonate solution afterwards.
Specifically, tri acetylacetonate solution can be continued to use used in the first acetone soln or step S2 used in step S1
Second acetone soln, or original clean acetone soln.
In specific implementation process, the temperature of the tri acetylacetonate solution after heating is specially 70~90 DEG C.Such as Ke Yiwei
70℃、75℃、80℃、85℃、90℃。
In one embodiment, with reference to shown in figure 4, step S3 includes：Metallized semiconductor slice, thin piece 1 is fixed on the 3rd bracket
On 7；The metallized semiconductor slice, thin piece 1 after the first power ultrasonic settles accounts beam is immersed to be equipped with by the 3rd bracket 7 and added
Soaked in the container 8 of tri acetylacetonate solution after heat, wherein, the total duration soaked in tri acetylacetonate solution after the heating
For 10~30 minutes.
Specifically, metallized semiconductor slice, thin piece 1 is fixed on the 3rd bracket 7 with edge-on or handstand.
For example, the total duration soaked in tri acetylacetonate solution after the heating be 10 minutes or 15 minutes or
20 minutes or 25 minutes or 30 minutes.
After step s 3, step S4 is then performed:Plating metal after the immersion of tri acetylacetonate solution terminates partly is led
Body slice, thin piece 1 is positioned in the 4th acetone soln, and with the second power ultrasonic more than the first power ultrasonic to being placed in
Metallized semiconductor slice, thin piece 1 in four acetone solns is cleaned, to remove nano-grade size on metallized semiconductor slice, thin piece 1
Photoresist.
Specifically, the 4th acetone soln is original clean acetone soln.
In one embodiment, with reference to shown in figure 5, step S4 includes：Metallized semiconductor slice, thin piece 1 is fixed on the 4th bracket
On 9；Metallized semiconductor slice, thin piece 1 after the tri acetylacetonate solution immersion after heating is terminated by the 4th bracket 9 immerses
It is equipped with the container 10 of the 4th acetone soln；The container 10 of the acetone soln of metallized semiconductor slice, thin piece 1 and the 4th will be equipped with
It is placed in supersonic wave cleaning machine 6；Supersonic wave cleaning machine 6 is worked 10~15 minutes with the second power ultrasonic, with to plating metal half
Conductor slice, thin piece 1 carries out ultrasonic wave cleaning.
In specific implementation process, duration that supersonic wave cleaning machine 6 is worked with the second power ultrasonic can be 10 minutes,
Or 11 minutes or 12 minutes or 13 minutes or 14 minutes or 15 minutes.
For example in specific implementation process, the second power ultrasonic could be arranged to 80W, 85W, 90W.
It should be noted that the first bracket 2, the second bracket 4, the 3rd bracket 7 and the 4th bracket 9 can with identical bracket,
It can also be same bracket.Container 3,5,8,10 used can be identical beaker or be same beaker in step S1~S4.
It should be noted that the concentration of the first acetone soln, the concentration of the second acetone soln, the concentration of tri acetylacetonate solution
Concentration with the 4th acetone soln is more than or equal to 99.5%.
Below, an instantiation of the present embodiment is provided：
(1) a piece of light to be stripped is prepared by semiconductor technologies such as beamwriter lithography, development, magnetron sputtering or evaporation coatings
The metallized semiconductor slice, thin piece 1 of photoresist；
(2) by metallized semiconductor slice, thin piece 1 it is edge-on be fixed on a bracket and be put into the acetone soln equipped with normal temperature
Soaked 6 hours in beaker；
(3) bracket and metallized semiconductor slice, thin piece 1 are placed into the beaker equipped with acetone soln, and it is clear to be put into ultrasonic wave
To power 10W ultrasonic cleaning 10 minutes in washing machine, until the large area plating metal around nano-scale photoresist drops；
(4) bracket and metallized semiconductor slice, thin piece 1 are together removed and placed in equipped with acetone soln and are heated to 80 DEG C
Soaked 15 minutes in beaker；
(5) bracket and metallized semiconductor slice, thin piece 1 are together removed and placed in a clean beaker equipped with acetone soln
In, beaker is put into supersonic wave cleaning machine with power 90W ultrasonic cleaning 10 minutes, nanometer on metallized semiconductor slice, thin piece 1
The photoresist of level size comes off.
One or more embodiments provided by the invention, have at least the following technical effects or advantages：
By the way that metallized semiconductor slice, thin piece is soaked in the first acetone soln of normal temperature；With the first power ultrasonic
The process that ripple is cleaned to the metallized semiconductor slice, thin piece being placed in the second acetone soln, makes on metallized semiconductor slice, thin piece
The photoresist of large area unexposed area peels off, photoresist difficult for drop-off in only remaining nano-scale, then after being heated
Acetone soln in soaked, make acetone soln be easier to enter the minimum photoresist area not being exposed so as to high temperature
Domain, finally carry out with the second power ultrasonic more than the first power ultrasonic to the plating metal that is placed in the 4th acetone soln
The process that semiconductor slice, thin piece is cleaned, so as to which high-power ultrasonic glass enables acetone soln more successfully to small scale structures
The photoresist of interior unexposed area is dissolved, so as to smoothly get rid of the unexposed photoresist in nano-scale, therefore,
The stripping of the high efficiency, high quality of the photoresist of nano-grade size unexposed area on slice, thin piece is realized, with low energy loss pair
It is clean to there are whole photoresist lift offs on the semiconductor of nano-grade size photoresist.
By first having carried out being soaked in acetone soln at normal temperatures；With the first power ultrasonic to being placed in the two the third
Metallized semiconductor slice, thin piece in ketone solution is cleaned, to remove the photoresist of the unexposed area in large area, accordingly, it is capable to
The time of the immersion of subsequent high temperature acetone soln and high-power ultrasonic cleaning is reduced, so as to reduce energy loss, reduces cost.
Although preferred embodiments of the present invention have been described, but those skilled in the art once know basic creation
Property concept, then can make other change and modification to these embodiments.So appended claims be intended to be construed to include it is excellent
Select embodiment and fall into having altered and changing for the scope of the invention.
Obviously, those skilled in the art can carry out the essence of various changes and modification without departing from the present invention to the present invention
God and scope.So, if these modifications and variations of the present invention belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising including these changes and modification.
Claims (9)
- A kind of 1. stripping means of nano-grade size photoresist on semiconductor, it is characterised in that including：Metallized semiconductor slice, thin piece is soaked in the first acetone soln of normal temperature；It is molten that metallized semiconductor slice, thin piece after the immersion of the first acetone soln of the normal temperature terminates is positioned over the second acetone In liquid, and the metallized semiconductor slice, thin piece being placed in second acetone soln is cleaned with the first power ultrasonic；By the tri acetylacetonate solution of the metallized semiconductor slice, thin piece after first power ultrasonic settles accounts beam after the heating In soaked；Metallized semiconductor slice, thin piece after tri acetylacetonate solution immersion terminates is positioned in the 4th acetone soln, and With the second power ultrasonic more than the first power ultrasonic to the metallized semiconductor that is placed in the 4th acetone soln Slice, thin piece is cleaned, to remove the photoresist of nano-grade size on the metallized semiconductor slice, thin piece.
- 2. the stripping means of nano-grade size photoresist on semiconductor as claimed in claim 1, it is characterised in that described to plate The step of metal semiconductor slice, thin piece is soaked in the first acetone soln of normal temperature, including：The metallized semiconductor slice, thin piece is fixed on the first bracket；Metallized semiconductor slice, thin piece immersion is equipped with to the first acetone soln of the normal temperature by first bracket Soaked in container, wherein, the total duration soaked in the first acetone soln of the normal temperature is 6~8 hours.
- 3. the stripping means of nano-grade size photoresist on semiconductor as claimed in claim 2, it is characterised in that described with The step of one power ultrasonic cleans to the metallized semiconductor slice, thin piece being placed in second acetone soln, including：The metallized semiconductor slice, thin piece is fixed on the second bracket；Metallized semiconductor slice, thin piece after terminating will be soaked by the first acetone soln of the normal temperature by second bracket Immersion is equipped with the container of second acetone soln；The container for being equipped with the metallized semiconductor slice, thin piece and second acetone soln is placed in supersonic wave cleaning machine；The supersonic wave cleaning machine is worked 5~10 minutes with first power ultrasonic, with to the metallized semiconductor piece Son carries out ultrasonic wave cleaning.
- 4. the stripping means of nano-grade size photoresist on semiconductor as claimed in claim 2, it is characterised in that it is described will be through Cross first power ultrasonic and settle accounts and soaked in the tri acetylacetonate solution of the metallized semiconductor slice, thin piece after beam after the heating The step of bubble, including：The metallized semiconductor slice, thin piece is fixed on the 3rd bracket；The metallized semiconductor slice, thin piece after first power ultrasonic settles accounts beam is immersed by the 3rd bracket and held Soaked in the container for the tri acetylacetonate solution being equipped with after the heating, wherein, the tri acetylacetonate solution after the heating The total duration of middle immersion is 10~30 minutes.
- 5. the stripping means of nano-grade size photoresist on semiconductor as claimed in claim 2, it is characterised in that described with big In the first power ultrasonic the second power ultrasonic to the metallized semiconductor slice, thin piece that is placed in the 4th acetone soln The step of being cleaned, including：The metallized semiconductor slice, thin piece is fixed on the 4th bracket；Metallized semiconductor piece after the tri acetylacetonate solution immersion after the heating is terminated by the 4th bracket Son, which immerses, to be equipped with the container of the 4th acetone soln；The container for being equipped with the metallized semiconductor slice, thin piece and the 4th acetone soln is placed in supersonic wave cleaning machine；The supersonic wave cleaning machine is worked 10~15 minutes with second power ultrasonic, with to the metallized semiconductor piece Son carries out ultrasonic wave cleaning.
- 6. the stripping means of nano-grade size photoresist on the semiconductor as described in any in claim 1-5, it is characterised in that The metallized semiconductor slice, thin piece is specially：There is the metallized semiconductor slice, thin piece of adhesion layer between the coat of metal and substrate.
- 7. the stripping means of nano-grade size photoresist on the semiconductor as described in any in claim 1-5, it is characterised in that The temperature of tri acetylacetonate solution after the heating is specially 70~90 DEG C.
- 8. the stripping means of nano-grade size photoresist on the semiconductor as described in any in claim 1-5, it is characterised in that：The concentration of first acetone soln, the concentration of second acetone soln, the concentration of the tri acetylacetonate solution and institute The concentration for stating the 4th acetone soln is more than or equal to 99.5%.
- 9. the stripping means of nano-grade size photoresist on the semiconductor as described in any in claim 1-5, it is characterised in that：The power of first power ultrasonic is specially 5~15W；The power of second power ultrasonic is specially 80~90W.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113721430A (en) * | 2021-03-30 | 2021-11-30 | 腾讯科技（深圳）有限公司 | Photoresist removing method and photoresist removing system |
| EP4095605A4 (en) * | 2021-03-30 | 2022-11-30 | Tencent Technology (Shenzhen) Company Limited | Photoresist removal method and photoresist removal system |
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| JP2013540171A (en) * | 2010-09-27 | 2013-10-31 | イーストマン ケミカル カンパニー | Methods and compositions for removing materials from substrates |
| CN102522500A (en) * | 2011-12-09 | 2012-06-27 | 华中科技大学 | Preparation method for phase change random storage array |
| CN103121659A (en) * | 2013-01-15 | 2013-05-29 | 西北工业大学 | Method for processing microstructure on highly oriented pyrolytic graphite by using photolithography technique |
| CN106547179A (en) * | 2016-11-02 | 2017-03-29 | 山东浪潮华光光电子股份有限公司 | A kind of effective method for removing photoresistance |
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| CN113721430B (en) * | 2021-03-30 | 2022-09-23 | 腾讯科技（深圳）有限公司 | Photoresist removing method and photoresist removing system |
| WO2022205776A1 (en) * | 2021-03-30 | 2022-10-06 | 腾讯科技（深圳）有限公司 | Photoresist removal method and photoresist removal system |
| EP4095605A4 (en) * | 2021-03-30 | 2022-11-30 | Tencent Technology (Shenzhen) Company Limited | Photoresist removal method and photoresist removal system |
| JP7391450B2 (en) | 2021-03-30 | 2023-12-05 | ▲騰▼▲訊▼科技（深▲セン▼）有限公司 | Photoresist removal method and photoresist removal system |
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