CN114453365A - Portable large-diameter silicon wafer box cleaning process - Google Patents
Portable large-diameter silicon wafer box cleaning process Download PDFInfo
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- CN114453365A CN114453365A CN202210054402.4A CN202210054402A CN114453365A CN 114453365 A CN114453365 A CN 114453365A CN 202210054402 A CN202210054402 A CN 202210054402A CN 114453365 A CN114453365 A CN 114453365A
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- wafer box
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- drying
- box
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- 238000000034 method Methods 0.000 title claims abstract description 58
- 238000004140 cleaning Methods 0.000 title claims abstract description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 26
- 239000010703 silicon Substances 0.000 title claims abstract description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000002245 particle Substances 0.000 claims abstract description 24
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 23
- 238000001035 drying Methods 0.000 claims description 69
- 238000005507 spraying Methods 0.000 claims description 27
- 230000003139 buffering effect Effects 0.000 claims description 4
- 230000003749 cleanliness Effects 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 86
- 239000007921 spray Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000008187 granular material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
- B08B9/20—Cleaning containers, e.g. tanks by using apparatus into or on to which containers, e.g. bottles, jars, cans are brought
- B08B9/28—Cleaning containers, e.g. tanks by using apparatus into or on to which containers, e.g. bottles, jars, cans are brought the apparatus cleaning by splash, spray, or jet application, with or without soaking
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2209/00—Details of machines or methods for cleaning hollow articles
- B08B2209/08—Details of machines or methods for cleaning containers, e.g. tanks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a portable large-diameter silicon wafer box cleaning process, which comprises the following steps: s1, firstly warm water pre-cleaning is carried out, the wafer box is sprayed by the warm water at a certain temperature to remove particles and metal ions on the surface of the wafer box, the process wafer box is sprayed at a low speed for a certain time in forward rotation and reverse rotation, the selection is carried out according to actual requirements, low-temperature pure water cleaning is carried out, the wafer box is sprayed by the low-temperature water at a certain temperature to reach secondary cleaning of particles and metal ions on the surface of the wafer box, the process wafer box is sprayed at a low speed for a certain time in forward rotation and reverse rotation, the selection is carried out according to actual requirements, S2, and then low-temperature final cleaning is carried out. The invention can be mainly matched with a novel process set by a portable large-diameter wafer box cleaning machine, can more effectively remove particle impurities and metal ions on the surface of a silicon wafer box, improves the surface cleanliness of the silicon wafer and prevents secondary pollution of the silicon wafer.
Description
Technical Field
The invention relates to the technical field of silicon wafer production, in particular to a convenient large-diameter silicon wafer box cleaning process.
Background
Need use the spool box in the in-process of carrying out silicon chip production and processing, but along with the increase of silicon chip size, corresponding spool box crescent requires more and more high to the clean degree of spool box, only adopts single pure water to spray at present, gets rid of the particle impurity and the metal ion on spool box surface, then only carries out single hot drying to this guarantees spool box surface cleanliness factor, and the clean effect in surface that leads to the spool box is not good, and the cleanliness factor on spool box surface is lower.
Disclosure of Invention
The invention aims to provide a convenient large-diameter silicon wafer box cleaning process, which aims to solve the problems that a wafer box needs to be used in the process of producing and processing silicon wafers, but the corresponding wafer box is gradually increased along with the increase of the size of the silicon wafers, the requirement on the cleanness degree of the wafer box is higher and higher, only single pure water is adopted for spraying at present to remove particle impurities and metal ions on the surface of the wafer box, and then only single heat drying is carried out, so that the cleanness of the surface of the wafer box is ensured, the surface cleaning effect of the wafer box is poor, and the cleanness of the surface of the wafer box is lower.
In order to achieve the purpose, the invention provides the following technical scheme: a portable large-diameter silicon wafer box cleaning process comprises the following steps:
s1, warm water pre-cleaning is firstly carried out, the wafer box is sprayed by the warm water at a certain temperature to remove particles and metal ions on the surface of the wafer box, the process wafer box is rotated forwards and reversely for a certain time at a low speed in a spraying process, the process wafer box is selected according to actual requirements, low-temperature pure water cleaning is carried out, the wafer box is sprayed by the low-temperature water at a certain temperature to clean particles and metal ions on the surface of the wafer box for a second time, and the process wafer box is rotated forwards and reversely for a certain time at a low speed in a spraying process and is selected according to actual requirements.
S2, then carry out low temperature final cleaning, the film box sprays through the low temperature water of uniform temperature and reaches final clean film box surface granule and metal ion, the process film box that sprays is low-speed forward rotation and reverse rotation certain time, select according to the actual demand, carry out film box high temperature drying again, the film box is dried through the high temperature of uniform temperature, the film box is through high-speed forward rotation and reverse rotation certain time, carry out the stoving effect in advance to the film box, detach a large amount of pure water in film box surface, select according to the actual demand.
S3, finally, drying at a medium and high temperature, drying the wafer box at the medium and high temperature at a certain temperature, alternately drying the wafer box at the high and low speeds for a certain time in a forward rotation and a reverse rotation, performing two cycles, removing pure water on the surface of the wafer box in an all-around manner through the high and low speeds and the forward and reverse rotation, alternately drying at the high and low temperature, drying the wafer box at the medium and high temperature at the high and low speeds for a certain time and drying at the low speed and low temperature at the certain temperature for a certain time, alternately drying the wafer box at the high speed, at the medium and high temperature and at the low speed, rotating the wafer box at the forward and reverse rotation for the above time, performing two cycles, removing particle particles and metal ions on the surface of the wafer box, thoroughly drying the wafer box, standing, buffering and downloading.
Preferably, the spraying temperature of the warm water for warm water pre-cleaning is 40-50 ℃, and the time of the low-speed forward rotation and the reverse rotation of the wafer box in the spraying process is 30-90 s.
Preferably, the temperature of the secondary cleaning warm water spraying of the low-temperature pure water and the temperature of the final low-temperature cleaning are both 15-25 ℃, and the time of the low-speed forward rotation and the reverse rotation of the wafer box in the secondary cleaning spraying and the final low-temperature cleaning processes is 30-90 s.
Preferably, the drying temperature of the high-temperature drying 1 for the wafer box is 60-70 ℃, and the time for the wafer box to pass through high-speed forward rotation and reverse rotation is 240-360 seconds.
Preferably, the temperature for drying at the medium and high temperature is 55-65 ℃, and the wafer box is alternately rotated at high speed and low speed in the forward direction and the reverse direction for 90-150 s.
Preferably, the high-low temperature alternate drying wafer box is dried at the high-speed drying temperature and time of 55-65 ℃ and 50-70s respectively, and the wafer box is dried at the low-speed drying temperature and time of 10-30 ℃ and 90-150s respectively.
Compared with the prior art, the invention has the beneficial effects that: the invention can be mainly matched with a novel process set by a portable large-diameter wafer box cleaning machine, can more effectively remove particle impurities and metal ions on the surface of a silicon wafer box, improves the surface cleanliness of the silicon wafer and prevents secondary pollution of the silicon wafer.
Drawings
FIG. 1 is a block diagram of a cartridge cleaning process of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
referring to fig. 1, the cleaning process of the present embodiment includes the following steps:
s1, warm water pre-cleaning is firstly carried out, the wafer box is sprayed by the warm water at a certain temperature to remove particles and metal ions on the surface of the wafer box, the process wafer box is rotated forwards and reversely for a certain time at a low speed in a spraying process, the process wafer box is selected according to actual requirements, low-temperature pure water cleaning is carried out, the wafer box is sprayed by the low-temperature water at a certain temperature to clean particles and metal ions on the surface of the wafer box for a second time, and the process wafer box is rotated forwards and reversely for a certain time at a low speed in a spraying process and is selected according to actual requirements.
S2, then carry out low temperature final cleaning, the film box sprays through the low temperature water of uniform temperature and reaches final clean film box surface granule and metal ion, the process film box that sprays is low-speed forward rotation and reverse rotation certain time, select according to the actual demand, carry out film box high temperature drying again, the film box is dried through the high temperature of uniform temperature, the film box is through high-speed forward rotation and reverse rotation certain time, carry out the stoving effect in advance to the film box, detach a large amount of pure water in film box surface, select according to the actual demand.
S3, drying at middle and high temperature, drying the wafer box at middle and high temperature with a certain temperature, alternately drying the wafer box at high and low speed in forward rotation and reverse rotation for a certain time, performing two cycles, removing pure water on the surface of the wafer box in all directions by high and low speed and forward and reverse rotation, alternately drying at high and low temperature, drying at middle and high temperature for a certain time and drying at low speed and low temperature for a certain time, alternately drying at high speed and middle and low speed in forward rotation and reverse rotation for the above time, performing two cycles, removing particle particles and metal ions on the surface of the wafer box, thoroughly drying the wafer box, standing, buffering and downloading.
In the embodiment, the spraying temperature of the warm water for warm water pre-cleaning is 40-50 ℃, and the time of the low-speed forward rotation and the reverse rotation of the wafer box in the spraying process is 30-90 s.
In the embodiment, the temperature of the secondary cleaning warm water spraying of the low-temperature pure water and the temperature of the final low-temperature cleaning are both 15-25 ℃, and the time of the low-speed forward rotation and the reverse rotation of the wafer box in the processes of the secondary cleaning spraying and the final low-temperature cleaning is 30-90 s.
In the embodiment, the drying temperature of the high-temperature drying 1 for the wafer box is 60-70 ℃, and the time for the wafer box to rotate forwards and backwards at high speed is 240-360 seconds.
In the embodiment, the temperature for drying at medium and high temperature is 55-65 ℃, and the wafer box is alternately rotated at high speed and low speed in the forward direction and the reverse direction for 90-150 s.
In the embodiment, the high-low temperature alternate drying wafer box is dried at the high-speed drying temperature and for the high-speed drying time of 55-65 ℃ and 50-70s respectively, and the low-speed drying temperature and time of the wafer box is dried at the low-speed drying temperature and for the low-speed drying time of 10-30 ℃ and 90-150s respectively.
The experimental result shows that compared with the original process method, the method can greatly improve the cleanliness of the surface of the wafer box.
Example two:
the difference characteristic from the first embodiment is that:
the cleaning process of the embodiment comprises the following steps:
s1, warm water pre-cleaning is firstly carried out, the wafer box is sprayed by the warm water at a certain temperature to remove particles and metal ions on the surface of the wafer box, the process wafer box is rotated forwards and reversely for a certain time at a low speed in a spraying process, the process wafer box is selected according to actual requirements, low-temperature pure water cleaning is carried out, the wafer box is sprayed by the low-temperature water at a certain temperature to clean particles and metal ions on the surface of the wafer box for a second time, and the process wafer box is rotated forwards and reversely for a certain time at a low speed in a spraying process and is selected according to actual requirements.
S2, then carry out low temperature final cleaning, the film box sprays through the low temperature water of uniform temperature and reaches final clean film box surface granule and metal ion, the process film box that sprays is low-speed forward rotation and reverse rotation certain time, select according to the actual demand, carry out film box high temperature drying again, the film box is dried through the high temperature of uniform temperature, the film box is through high-speed forward rotation and reverse rotation certain time, carry out the stoving effect in advance to the film box, detach a large amount of pure water in film box surface, select according to the actual demand.
S3, finally, drying at a medium and high temperature, drying the wafer box at the medium and high temperature at a certain temperature, alternately drying the wafer box at the high and low speeds for a certain time in a forward rotation and a reverse rotation, performing two cycles, removing pure water on the surface of the wafer box in an all-around manner through the high and low speeds and the forward and reverse rotation, alternately drying at the high and low temperature, drying the wafer box at the medium and high temperature at the high and low speeds for a certain time and drying at the low speed and low temperature at the certain temperature for a certain time, alternately drying the wafer box at the high speed, at the medium and high temperature and at the low speed, rotating the wafer box at the forward and reverse rotation for the above time, performing two cycles, removing particle particles and metal ions on the surface of the wafer box, thoroughly drying the wafer box, standing, buffering and downloading.
In the embodiment, the spraying temperature of the warm water for warm water pre-cleaning is 20-30 ℃, and the time of the low-speed forward rotation and the reverse rotation of the wafer box in the spraying process is 30-40 s.
In the embodiment, the temperature of the secondary cleaning warm water spraying of the low-temperature pure water and the temperature of the final low-temperature cleaning are both 15-25 ℃, and the time of the low-speed forward rotation and the reverse rotation of the wafer box in the processes of the secondary cleaning spraying and the final low-temperature cleaning is 30-90 s.
In the embodiment, the drying temperature of the high-temperature drying 1 for the wafer box is 20-50 ℃, and the time for the wafer box to rotate forwards and backwards at a high speed is 100-200 s.
In the embodiment, the temperature for drying at medium and high temperature is 55-65 ℃, and the wafer box is alternately rotated at high speed and low speed for 90-150s in forward rotation and reverse rotation.
In the embodiment, the high-low temperature alternate drying wafer box is dried at the high-speed drying temperature and for the high-speed drying time of 55-65 ℃ and 50-70s respectively, and the low-speed drying temperature and time of the wafer box is dried at the low-speed drying temperature and for the low-speed drying time of 10-30 ℃ and 90-150s respectively.
To sum up: the experimental result of the invention in the first embodiment of the invention shows that compared with the experimental result of the process in the second embodiment, the invention can be mainly matched with a novel process set by a portable large-diameter wafer box cleaning machine to more effectively remove particle impurities and metal ions on the surface of a silicon wafer box, further improve the surface cleanliness of the silicon wafer and more effectively prevent secondary pollution of the silicon wafer.
It should be noted that, in this document, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. The utility model provides a portable major diameter silicon chip spool box cleaning process which characterized in that: the cleaning process comprises the following steps:
s1, firstly, warm water pre-cleaning is carried out, the wafer box is sprayed with warm water at a certain temperature to remove particles and metal ions on the surface of the wafer box, the wafer box rotates forwards and backwards at a low speed for a certain time in the spraying process, selection is carried out according to actual requirements, low-temperature pure water cleaning is carried out, the wafer box is sprayed with low-temperature water at a certain temperature to clean particles and metal ions on the surface of the wafer box for the second time, and the wafer box rotates forwards and backwards at a low speed for a certain time in the spraying process and is selected according to actual requirements;
s2, finally cleaning at low temperature, spraying low-temperature water at a certain temperature on the wafer box to finally clean particles and metal ions on the surface of the wafer box, positively rotating and reversely rotating the wafer box at low speed for a certain time in the spraying process, selecting according to actual requirements, drying the wafer box at high temperature, positively rotating and reversely rotating the wafer box at high speed for a certain time, pre-drying the wafer box, removing a large amount of pure water on the surface of the wafer box, and selecting according to actual requirements;
s3, finally, drying at a medium and high temperature, drying the wafer box at the medium and high temperature at a certain temperature, alternately drying the wafer box at the high and low speeds for a certain time in a forward rotation and a reverse rotation, performing two cycles, removing pure water on the surface of the wafer box in an all-around manner through the high and low speeds and the forward and reverse rotation, alternately drying at the high and low temperature, drying the wafer box at the medium and high temperature at the high and low speeds for a certain time and drying at the low speed and low temperature at the certain temperature for a certain time, alternately drying the wafer box at the high speed, at the medium and high temperature and at the low speed, rotating the wafer box at the forward and reverse rotation for the above time, performing two cycles, removing particle particles and metal ions on the surface of the wafer box, thoroughly drying the wafer box, standing, buffering and downloading.
2. The portable large-diameter silicon wafer box cleaning process according to claim 1, characterized in that: the spraying temperature of the warm water for warm water pre-cleaning is 40-50 ℃, and the time of the low-speed forward rotation and the reverse rotation of the wafer box in the spraying process is 30-90 s.
3. The portable large-diameter silicon wafer box cleaning process according to claim 1, characterized in that: the temperature of the secondary cleaning warm water spraying of the low-temperature pure water and the temperature of the final low-temperature cleaning are both 15-25 ℃, and the time of the low-speed forward rotation and the reverse rotation of the wafer box in the secondary cleaning spraying and low-temperature final cleaning processes is 30-90 s.
4. The portable large-diameter silicon wafer box cleaning process according to claim 1, characterized in that: the drying temperature of the high-temperature drying box 1 is 60-70 ℃, and the time for the box to rotate forwards and backwards at high speed is 240-360 s.
5. The portable large-diameter silicon wafer box cleaning process according to claim 1, characterized in that: the temperature of the medium-high temperature drying is 55-65 ℃, and the high-speed and low-speed alternation of the wafer box is carried out, and the forward rotation time and the reverse rotation time are 90-150 s.
6. The portable large-diameter silicon wafer box cleaning process according to claim 1, characterized in that: the high-low temperature alternate drying wafer box is dried at the high-speed drying temperature and time of 55-65 ℃ and 50-70s respectively, and the low-speed drying temperature and time of the wafer box are dried at the low speed of 10-30 ℃ and 90-150s respectively.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210054402.4A CN114453365B (en) | 2022-01-18 | 2022-01-18 | Portable large-diameter silicon wafer box cleaning process |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210054402.4A CN114453365B (en) | 2022-01-18 | 2022-01-18 | Portable large-diameter silicon wafer box cleaning process |
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| CN114453365A true CN114453365A (en) | 2022-05-10 |
| CN114453365B CN114453365B (en) | 2023-01-03 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115502159A (en) * | 2022-08-24 | 2022-12-23 | 杭州中欣晶圆半导体股份有限公司 | Cleaning process applied to 12-inch recovery wafer box |
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| CN115502159B (en) * | 2022-08-24 | 2023-09-08 | 杭州中欣晶圆半导体股份有限公司 | Cleaning process applied to 12-inch recycling box |
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| Publication number | Publication date |
|---|---|
| CN114453365B (en) | 2023-01-03 |
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