JPS63108638U - - Google Patents

Info

Publication number
JPS63108638U
JPS63108638U JP65587U JP65587U JPS63108638U JP S63108638 U JPS63108638 U JP S63108638U JP 65587 U JP65587 U JP 65587U JP 65587 U JP65587 U JP 65587U JP S63108638 U JPS63108638 U JP S63108638U
Authority
JP
Japan
Prior art keywords
adhesive layer
transverse groove
thicker
insulating member
sides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP65587U
Other languages
Japanese (ja)
Other versions
JPH0642342Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP65587U priority Critical patent/JPH0642342Y2/en
Publication of JPS63108638U publication Critical patent/JPS63108638U/ja
Application granted granted Critical
Publication of JPH0642342Y2 publication Critical patent/JPH0642342Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Die Bonding (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図aは、本考案の第一の実施例を示す平面
図、同図bは同図aのA―A線に沿つて切断し矢
印の方向から見たときの断面図、第2図は、本考
案の第2の実施例を示す平面図である。 1…絶縁部材、2,4…接着剤層、2a,4a
…溝両側の厚い接着剤層、3,5…接着剤層横断
溝。
Fig. 1a is a plan view showing the first embodiment of the present invention, Fig. 1b is a cross-sectional view taken along the line AA in Fig. FIG. 2 is a plan view showing a second embodiment of the present invention. 1... Insulating member, 2, 4... Adhesive layer, 2a, 4a
...thick adhesive layer on both sides of the groove, 3,5...glue layer crossing groove.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体チツプを収容したケースに接着するため
の、一部分に横断溝を有する接着剤層が周辺に形
成された絶縁部材からなり、かつ、前記横断溝の
両側近傍の接着剤層は他の部分より部分的に厚く
されていることを特徴とする半導体装置封止用キ
ヤツプ。
An insulating member is formed around an adhesive layer having a transverse groove in a part thereof for adhering to a case containing a semiconductor chip, and the adhesive layer near both sides of the transverse groove is partially thicker than other parts. A cap for encapsulating a semiconductor device, which is characterized by being thicker.
JP65587U 1987-01-06 1987-01-06 Cap for semiconductor device encapsulation Expired - Lifetime JPH0642342Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP65587U JPH0642342Y2 (en) 1987-01-06 1987-01-06 Cap for semiconductor device encapsulation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP65587U JPH0642342Y2 (en) 1987-01-06 1987-01-06 Cap for semiconductor device encapsulation

Publications (2)

Publication Number Publication Date
JPS63108638U true JPS63108638U (en) 1988-07-13
JPH0642342Y2 JPH0642342Y2 (en) 1994-11-02

Family

ID=30777822

Family Applications (1)

Application Number Title Priority Date Filing Date
JP65587U Expired - Lifetime JPH0642342Y2 (en) 1987-01-06 1987-01-06 Cap for semiconductor device encapsulation

Country Status (1)

Country Link
JP (1) JPH0642342Y2 (en)

Also Published As

Publication number Publication date
JPH0642342Y2 (en) 1994-11-02

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