JPS629639A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS629639A JPS629639A JP60148864A JP14886485A JPS629639A JP S629639 A JPS629639 A JP S629639A JP 60148864 A JP60148864 A JP 60148864A JP 14886485 A JP14886485 A JP 14886485A JP S629639 A JPS629639 A JP S629639A
- Authority
- JP
- Japan
- Prior art keywords
- printed wiring
- sealed
- isolated
- resin
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体装置の製造方法KlfJlし、特に小
型トランジスタ、ダイオード、小屋ICのチップ部品を
信頼度高くかつ安価に提供するものであるO
〔従来の技術〕
従来、この種の半導体チップ部品は、バンチングされた
リードフレームに半導体ペレットを搭載・結線を行った
のち、リード形状の加工を行いチップ形状にするものや
、セラミック部品に半導体ペレットを搭載・結線し樹脂
封止するものがある。[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to a method for manufacturing semiconductor devices, particularly for providing chip components for small transistors, diodes, and ICs with high reliability and at low cost. [Conventional technology] Conventionally, this type of semiconductor chip component has been produced by mounting semiconductor pellets on a bunched lead frame and connecting them, and then processing the leads into a chip shape, or by mounting semiconductor pellets on a ceramic component. There are some that are equipped with, wired and sealed with resin.
従来の製法に基づくものは、前者の例では封止後にリー
ド加工を行うために耐湿性等の面で劣化が見られる外、
形状寸法のバラツキが大きいという欠点があシ、実装工
程でのトラブルの要因となっている。In the case of products based on conventional manufacturing methods, lead processing is performed after sealing in the former example, which causes deterioration in terms of moisture resistance, etc.
The drawback is that there is large variation in shape and dimensions, which causes trouble during the mounting process.
又、後者の例では、材料が高価である事の外に材料基板
の寸法バラツキ、封止寸法バラツキが大きいという欠点
があシ、やはシ実装工程でのトラプぞの要因となってい
る。In addition, in the latter example, in addition to the expensive materials, there are large variations in the dimensions of the material substrate and the sealing dimensions, which is a cause for failure in the mounting process.
本発明は、あらかじめ素子構造に合致したパターンニン
グを施したプリント配線基板に半導体ペレットを搭載し
、必要な内部結線を行い、その後素子面を樹脂で封止し
、しかる後封止済プリント配線基板を切断分離し、個々
の半導体素子に分離するものである。この時、素子の電
気特性の測定やマーキング等の工程は切断・分離の前後
いずれでもよく、素子構造やプロセスの最適化により最
もやシやすい工程で行えはよい。In the present invention, semiconductor pellets are mounted on a printed wiring board that has been patterned in advance to match the element structure, the necessary internal connections are made, the element surface is then sealed with resin, and then the sealed printed wiring board This is to cut and separate the semiconductor elements into individual semiconductor elements. At this time, processes such as measuring the electrical characteristics of the element and marking may be performed either before or after cutting/separation, and can be performed in the most convenient process by optimizing the element structure and process.
次に1本発明について図面を参照して説明する。 Next, one embodiment of the present invention will be explained with reference to the drawings.
第1図は完成した装置の側面及び断面を表わしている。FIG. 1 shows a side view and cross-section of the completed device.
第2図(5)は本装置の組立に用いるプリント配線基板
の側断面図、同図(均はこのプリント配線基板の平面部
分図である。以降図面に従い組立工程を説明する。FIG. 2(5) is a side cross-sectional view of a printed wiring board used for assembling this device, and the figure (the figure is a partial plan view of this printed wiring board). Hereinafter, the assembly process will be explained with reference to the drawings.
プリント配線基板1に半導体ペレット3をソルダー2で
取シつけ固定し、ボンディングワイヤー4で結線する。A semiconductor pellet 3 is attached and fixed to a printed wiring board 1 with a solder 2, and connected with a bonding wire 4.
この様子を第3図に示す。次に、素子面を樹脂5で封止
する。封止は全面でも部分的に行ってもよい。第4図に
これを示す。最後に素子を切断分離し完成品となる。こ
の様子を第5図に示す。切断はスルーホールの中央部を
正確に行う事により、裏面の実装用コンタクトとの連結
を損うことなく分離出来る。This situation is shown in FIG. Next, the element surface is sealed with resin 5. Sealing may be performed entirely or partially. This is shown in Figure 4. Finally, the elements are cut and separated to form a finished product. This situation is shown in FIG. By cutting accurately in the center of the through hole, it can be separated without damaging the connection with the mounting contact on the back side.
以上説明した様に、本発明によれば加工精度が高く品質
のよい、小型リードレスチップキャリア素子が得られる
。外形は従来のリード加工によるチップキャリアに比較
し30〜50チ小型化する事ができ、今後の小型化志向
にも十分対応できる。As explained above, according to the present invention, a small leadless chip carrier element with high processing accuracy and good quality can be obtained. The external size can be reduced by 30 to 50 inches compared to the conventional lead-processed chip carrier, and can fully accommodate future miniaturization trends.
素子は小型のダイオードやトランジスタから、大形のL
TI素子まで広く適用出来、その効果は測シ知れない。Elements range from small diodes and transistors to large L
It can be widely applied to TI elements, and its effects are immeasurable.
第1図は本発明の一実施例による半導体装置の部分断面
を示した側面図である。
第2図(〜および第2回出)はそれぞれプリント配線基
板の断面および平面図である。
第3図はプリント配線基板に半導体ペレットを搭載し外
部端子と結線した様子を表わしている側面図である。
第4図は半導体素子面を保護用樹脂で封止した様子を表
わす断面図である。
第5図は樹脂封止後の基板を切断分離し、個々の装置と
して完成した様子を示している断面図である。
1・・・・・・プリント配線基板、2・・・・・・マウ
ントソルダー、3・・・・・・半導体ペレット、4・・
・・・・ボンディングワイヤー、5・・−・・・封止樹
脂。
代理人 弁理士 内 原 晋、。
\1.−FIG. 1 is a side view showing a partial cross section of a semiconductor device according to an embodiment of the present invention. FIG. 2 (through and second appearance) are a cross-sectional view and a plan view of the printed wiring board, respectively. FIG. 3 is a side view showing a semiconductor pellet mounted on a printed wiring board and connected to external terminals. FIG. 4 is a cross-sectional view showing the semiconductor element surface sealed with a protective resin. FIG. 5 is a cross-sectional view showing the state in which the resin-sealed substrate is cut and separated to form individual devices. 1...Printed wiring board, 2...Mount solder, 3...Semiconductor pellet, 4...
... Bonding wire, 5 ... Sealing resin. Agent: Susumu Uchihara, patent attorney. \1. −
Claims (1)
半導体チップを搭載し、該半導体チップの電極と前記配
線との結線を行い、樹脂封止後これを切断分離すること
を特徴とする半導体装置の製造方法。A method for manufacturing a semiconductor device, which comprises mounting a semiconductor chip on a printed wiring board having patterned wiring, connecting electrodes of the semiconductor chip to the wiring, and cutting and separating the chips after resin sealing. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60148864A JPS629639A (en) | 1985-07-05 | 1985-07-05 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60148864A JPS629639A (en) | 1985-07-05 | 1985-07-05 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS629639A true JPS629639A (en) | 1987-01-17 |
Family
ID=15462441
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60148864A Pending JPS629639A (en) | 1985-07-05 | 1985-07-05 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS629639A (en) |
Cited By (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5950074A (en) * | 1997-04-18 | 1999-09-07 | Amkor Technology, Inc. | Method of making an integrated circuit package |
US5962810A (en) * | 1997-09-09 | 1999-10-05 | Amkor Technology, Inc. | Integrated circuit package employing a transparent encapsulant |
US5981314A (en) * | 1996-10-31 | 1999-11-09 | Amkor Technology, Inc. | Near chip size integrated circuit package |
US6117705A (en) * | 1997-04-18 | 2000-09-12 | Amkor Technology, Inc. | Method of making integrated circuit package having adhesive bead supporting planar lid above planar substrate |
US6150193A (en) * | 1996-10-31 | 2000-11-21 | Amkor Technology, Inc. | RF shielded device |
US6281568B1 (en) | 1998-10-21 | 2001-08-28 | Amkor Technology, Inc. | Plastic integrated circuit device package and leadframe having partially undercut leads and die pad |
US6433277B1 (en) | 1998-06-24 | 2002-08-13 | Amkor Technology, Inc. | Plastic integrated circuit package and method and leadframe for making the package |
US6448633B1 (en) | 1998-11-20 | 2002-09-10 | Amkor Technology, Inc. | Semiconductor package and method of making using leadframe having lead locks to secure leads to encapsulant |
US6448635B1 (en) | 1999-08-30 | 2002-09-10 | Amkor Technology, Inc. | Surface acoustical wave flip chip |
US6469369B1 (en) | 1999-06-30 | 2002-10-22 | Amkor Technology, Inc. | Leadframe having a mold inflow groove and method for making |
US6472598B1 (en) | 1998-08-28 | 2002-10-29 | Amkor Technology, Inc. | Electromagnetic interference shield device with conductive encapsulant and dam |
US6475827B1 (en) | 1999-10-15 | 2002-11-05 | Amkor Technology, Inc. | Method for making a semiconductor package having improved defect testing and increased production yield |
US6476478B1 (en) | 1999-11-12 | 2002-11-05 | Amkor Technology, Inc. | Cavity semiconductor package with exposed leads and die pad |
US6501161B1 (en) | 1999-10-15 | 2002-12-31 | Amkor Technology, Inc. | Semiconductor package having increased solder joint strength |
US6512288B1 (en) | 1999-06-07 | 2003-01-28 | Amkor Technology, Inc. | Circuit board semiconductor package |
US6515356B1 (en) | 1999-05-07 | 2003-02-04 | Amkor Technology, Inc. | Semiconductor package and method for fabricating the same |
US6525406B1 (en) | 1999-10-15 | 2003-02-25 | Amkor Technology, Inc. | Semiconductor device having increased moisture path and increased solder joint strength |
US6555899B1 (en) | 1999-10-15 | 2003-04-29 | Amkor Technology, Inc. | Semiconductor package leadframe assembly and method of manufacture |
US6605866B1 (en) | 1999-12-16 | 2003-08-12 | Amkor Technology, Inc. | Stackable semiconductor package and method for manufacturing same |
US6605865B2 (en) | 2001-03-19 | 2003-08-12 | Amkor Technology, Inc. | Semiconductor package with optimized leadframe bonding strength |
US6608366B1 (en) | 2002-04-15 | 2003-08-19 | Harry J. Fogelson | Lead frame with plated end leads |
US6611047B2 (en) | 2001-10-12 | 2003-08-26 | Amkor Technology, Inc. | Semiconductor package with singulation crease |
US6616436B1 (en) | 1999-10-15 | 2003-09-09 | Amkor Technology, Inc. | Apparatus for manufacturing semiconductor packages |
US6624005B1 (en) | 2000-09-06 | 2003-09-23 | Amkor Technology, Inc. | Semiconductor memory cards and method of making same |
US6627977B1 (en) | 2002-05-09 | 2003-09-30 | Amkor Technology, Inc. | Semiconductor package including isolated ring structure |
US6627976B1 (en) | 1999-10-15 | 2003-09-30 | Amkor Technology, Inc. | Leadframe for semiconductor package and mold for molding the same |
US6646339B1 (en) | 1999-10-15 | 2003-11-11 | Amkor Technology, Inc. | Thin and heat radiant semiconductor package and method for manufacturing |
US6677662B1 (en) | 1999-10-15 | 2004-01-13 | Amkor Technology, Inc. | Clamp and heat block assembly for wire bonding a semiconductor package assembly |
US6677663B1 (en) | 1999-12-30 | 2004-01-13 | Amkor Technology, Inc. | End grid array semiconductor package |
US6696747B1 (en) | 1999-10-15 | 2004-02-24 | Amkor Technology, Inc. | Semiconductor package having reduced thickness |
US6700187B2 (en) | 2001-03-27 | 2004-03-02 | Amkor Technology, Inc. | Semiconductor package and method for manufacturing the same |
US6713322B2 (en) | 2001-03-27 | 2004-03-30 | Amkor Technology, Inc. | Lead frame for semiconductor package |
US6730544B1 (en) | 1999-12-20 | 2004-05-04 | Amkor Technology, Inc. | Stackable semiconductor package and method for manufacturing same |
US6753597B1 (en) | 1999-12-16 | 2004-06-22 | Amkor Technology, Inc. | Encapsulated semiconductor package including chip paddle and leads |
US6756658B1 (en) | 2001-04-06 | 2004-06-29 | Amkor Technology, Inc. | Making two lead surface mounting high power microleadframe semiconductor packages |
US6798046B1 (en) | 2002-01-22 | 2004-09-28 | Amkor Technology, Inc. | Semiconductor package including ring structure connected to leads with vertically downset inner ends |
US6803645B2 (en) | 2000-12-29 | 2004-10-12 | Amkor Technology, Inc. | Semiconductor package including flip chip |
US6833609B1 (en) | 1999-11-05 | 2004-12-21 | Amkor Technology, Inc. | Integrated circuit device packages and substrates for making the packages |
US6841414B1 (en) | 2002-06-19 | 2005-01-11 | Amkor Technology, Inc. | Saw and etch singulation method for a chip package |
US6847103B1 (en) | 1999-11-09 | 2005-01-25 | Amkor Technology, Inc. | Semiconductor package with exposed die pad and body-locking leadframe |
US6847099B1 (en) | 2003-02-05 | 2005-01-25 | Amkor Technology Inc. | Offset etched corner leads for semiconductor package |
US6853059B1 (en) | 1999-10-15 | 2005-02-08 | Amkor Technology, Inc. | Semiconductor package having improved adhesiveness and ground bonding |
US6858919B2 (en) | 2000-03-25 | 2005-02-22 | Amkor Technology, Inc. | Semiconductor package |
US6867071B1 (en) | 2002-07-12 | 2005-03-15 | Amkor Technology, Inc. | Leadframe including corner leads and semiconductor package using same |
US6885086B1 (en) | 2002-03-05 | 2005-04-26 | Amkor Technology, Inc. | Reduced copper lead frame for saw-singulated chip package |
US6927478B2 (en) | 2001-01-15 | 2005-08-09 | Amkor Technology, Inc. | Reduced size semiconductor package with stacked dies |
US6962829B2 (en) | 1996-10-31 | 2005-11-08 | Amkor Technology, Inc. | Method of making near chip size integrated circuit package |
US7042068B2 (en) | 2000-04-27 | 2006-05-09 | Amkor Technology, Inc. | Leadframe and semiconductor package made using the leadframe |
US8154111B2 (en) | 1999-12-16 | 2012-04-10 | Amkor Technology, Inc. | Near chip size semiconductor package |
US8501539B2 (en) | 2009-11-12 | 2013-08-06 | Freescale Semiconductor, Inc. | Semiconductor device package |
US8841758B2 (en) | 2012-06-29 | 2014-09-23 | Freescale Semiconductor, Inc. | Semiconductor device package and method of manufacture |
US8866278B1 (en) | 2011-10-10 | 2014-10-21 | Amkor Technology, Inc. | Semiconductor device with increased I/O configuration |
US9631481B1 (en) | 2011-01-27 | 2017-04-25 | Amkor Technology, Inc. | Semiconductor device including leadframe with a combination of leads and lands and method |
US9673122B2 (en) | 2014-05-02 | 2017-06-06 | Amkor Technology, Inc. | Micro lead frame structure having reinforcing portions and method |
US9691734B1 (en) | 2009-12-07 | 2017-06-27 | Amkor Technology, Inc. | Method of forming a plurality of electronic component packages |
US9871015B1 (en) | 2002-11-08 | 2018-01-16 | Amkor Technology, Inc. | Wafer level package and fabrication method |
US9947623B1 (en) | 2011-11-29 | 2018-04-17 | Amkor Technology, Inc. | Semiconductor device comprising a conductive pad on a protruding-through electrode |
US10014240B1 (en) | 2012-03-29 | 2018-07-03 | Amkor Technology, Inc. | Embedded component package and fabrication method |
US10090228B1 (en) | 2012-03-06 | 2018-10-02 | Amkor Technology, Inc. | Semiconductor device with leadframe configured to facilitate reduced burr formation |
-
1985
- 1985-07-05 JP JP60148864A patent/JPS629639A/en active Pending
Cited By (75)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5981314A (en) * | 1996-10-31 | 1999-11-09 | Amkor Technology, Inc. | Near chip size integrated circuit package |
US6962829B2 (en) | 1996-10-31 | 2005-11-08 | Amkor Technology, Inc. | Method of making near chip size integrated circuit package |
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