JPS6294654U - - Google Patents
Info
- Publication number
- JPS6294654U JPS6294654U JP18606285U JP18606285U JPS6294654U JP S6294654 U JPS6294654 U JP S6294654U JP 18606285 U JP18606285 U JP 18606285U JP 18606285 U JP18606285 U JP 18606285U JP S6294654 U JPS6294654 U JP S6294654U
- Authority
- JP
- Japan
- Prior art keywords
- mounting base
- pressure transducer
- semiconductor pressure
- metal body
- bonded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 230000005496 eutectics Effects 0.000 claims 1
- 239000006023 eutectic alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Description
第１図は本考案の実施例を示す断面図である。
１……ｎ形シリコン単結晶基板、２……ｐ形ゲ
ージ抵抗、３……酸化膜、４……アルミニウム電
極、５……金―シリコン共晶合金接合層、６……
ｐ形シリコン取付台、７……金―シリコン共晶合
金接合層、８……金線、９……金属本体、１０…
…ハーメチツクシール、１１……外部引出線。
FIG. 1 is a sectional view showing an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... N-type silicon single crystal substrate, 2... P-type gauge resistor, 3... Oxide film, 4... Aluminum electrode, 5... Gold-silicon eutectic alloy bonding layer, 6...
P-type silicon mounting base, 7... Gold-silicon eutectic alloy bonding layer, 8... Gold wire, 9... Metal body, 10...
...Hermetic seal, 11...External leader line.
Claims (1)
形成したダイアフラム形感圧素子を取付台に接合
し前記取付台を金属本体に接合してなる半導体圧
力変換器において、前記取付台が前記シリコン基
板と逆の導電性を有することを特徴とする半導体
圧力変換器。 ２ 実用新案登録請求の範囲第１項において、感
圧素子、取付台、金属本体の接合を金―シリコン
共晶により行うことを特徴とする半導体圧力変換
器。[Claims for Utility Model Registration] 1. A semiconductor pressure transducer comprising a diaphragm pressure-sensitive element in which a strain gauge element is integrally formed on a silicon substrate is bonded to a mounting base, and the mounting base is bonded to a metal body, A semiconductor pressure transducer characterized in that a mounting base has a conductivity opposite to that of the silicon substrate. 2. A semiconductor pressure transducer according to claim 1 of the utility model registration claim, characterized in that the pressure-sensitive element, the mounting base, and the metal body are joined by gold-silicon eutectic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18606285U JPS6294654U (en) | 1985-12-04 | 1985-12-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18606285U JPS6294654U (en) | 1985-12-04 | 1985-12-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6294654U true JPS6294654U (en) | 1987-06-17 |
Family
ID=31135277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18606285U Pending JPS6294654U (en) | 1985-12-04 | 1985-12-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6294654U (en) |
-
1985
- 1985-12-04 JP JP18606285U patent/JPS6294654U/ja active Pending
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