JPS6287481A - 単結晶引上装置における溶湯初期位置設定方法 - Google Patents

単結晶引上装置における溶湯初期位置設定方法

Info

Publication number
JPS6287481A
JPS6287481A JP22577285A JP22577285A JPS6287481A JP S6287481 A JPS6287481 A JP S6287481A JP 22577285 A JP22577285 A JP 22577285A JP 22577285 A JP22577285 A JP 22577285A JP S6287481 A JPS6287481 A JP S6287481A
Authority
JP
Japan
Prior art keywords
molten metal
single crystal
melt
crucible
rod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22577285A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0331673B2 (enrdf_load_stackoverflow
Inventor
Shoichi Konno
今野　昭一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON SILICON KK
Mitsubishi Metal Corp
Original Assignee
NIPPON SILICON KK
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON SILICON KK, Mitsubishi Metal Corp filed Critical NIPPON SILICON KK
Priority to JP22577285A priority Critical patent/JPS6287481A/ja
Publication of JPS6287481A publication Critical patent/JPS6287481A/ja
Publication of JPH0331673B2 publication Critical patent/JPH0331673B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP22577285A 1985-10-09 1985-10-09 単結晶引上装置における溶湯初期位置設定方法 Granted JPS6287481A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22577285A JPS6287481A (ja) 1985-10-09 1985-10-09 単結晶引上装置における溶湯初期位置設定方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22577285A JPS6287481A (ja) 1985-10-09 1985-10-09 単結晶引上装置における溶湯初期位置設定方法

Publications (2)

Publication Number Publication Date
JPS6287481A true JPS6287481A (ja) 1987-04-21
JPH0331673B2 JPH0331673B2 (enrdf_load_stackoverflow) 1991-05-08

Family

ID=16834551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22577285A Granted JPS6287481A (ja) 1985-10-09 1985-10-09 単結晶引上装置における溶湯初期位置設定方法

Country Status (1)

Country Link
JP (1) JPS6287481A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63199169U (enrdf_load_stackoverflow) * 1987-06-08 1988-12-21
US5437242A (en) * 1992-09-17 1995-08-01 Wacker-Chemitronic Gessellschaft Fuer Elektronik-Grundstoffe Mbh Process and apparatus for controlling the melt level while pulling single crystals
JPH07330484A (ja) * 1994-06-03 1995-12-19 Nippon Steel Corp シリコン単結晶の引上げ装置および製造方法
JP2011057464A (ja) * 2009-09-07 2011-03-24 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶シリコンの製造方法及び単結晶シリコンの製造装置
US8801853B2 (en) 2005-07-22 2014-08-12 Sumco Corporation Mechanism for controlling melt level in single crystal pulling apparatus, method for controlling melt level in single crystal pulling apparatus, mechanism for adjusting melt level in single crystal pulling apparatus and method for adjusting melt level while pulling single crystal
CN106065492A (zh) * 2015-04-23 2016-11-02 环球晶圆股份有限公司 热熔间隙测量装置、长晶装置及热熔间隙测量方法
DE112022004283T5 (de) 2021-09-06 2024-08-01 Sumco Corporation Verfahren zur Herstellung eines Einkristalls und Vorrichtung zur Herstellung eines Einkristalls

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6078974B2 (ja) 2012-04-04 2017-02-15 株式会社Sumco シリコン単結晶の製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63199169U (enrdf_load_stackoverflow) * 1987-06-08 1988-12-21
US5437242A (en) * 1992-09-17 1995-08-01 Wacker-Chemitronic Gessellschaft Fuer Elektronik-Grundstoffe Mbh Process and apparatus for controlling the melt level while pulling single crystals
JPH07330484A (ja) * 1994-06-03 1995-12-19 Nippon Steel Corp シリコン単結晶の引上げ装置および製造方法
US8801853B2 (en) 2005-07-22 2014-08-12 Sumco Corporation Mechanism for controlling melt level in single crystal pulling apparatus, method for controlling melt level in single crystal pulling apparatus, mechanism for adjusting melt level in single crystal pulling apparatus and method for adjusting melt level while pulling single crystal
JP2011057464A (ja) * 2009-09-07 2011-03-24 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶シリコンの製造方法及び単結晶シリコンの製造装置
CN106065492A (zh) * 2015-04-23 2016-11-02 环球晶圆股份有限公司 热熔间隙测量装置、长晶装置及热熔间隙测量方法
JP2016204253A (ja) * 2015-04-23 2016-12-08 環球晶圓股▲ふん▼有限公司 メルトギャップ測定装置、結晶成長装置、及びメルトギャップ測定方法
DE112022004283T5 (de) 2021-09-06 2024-08-01 Sumco Corporation Verfahren zur Herstellung eines Einkristalls und Vorrichtung zur Herstellung eines Einkristalls

Also Published As

Publication number Publication date
JPH0331673B2 (enrdf_load_stackoverflow) 1991-05-08

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Legal Events

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