JPH0331674B2 - - Google Patents
Info
- Publication number
- JPH0331674B2 JPH0331674B2 JP23279885A JP23279885A JPH0331674B2 JP H0331674 B2 JPH0331674 B2 JP H0331674B2 JP 23279885 A JP23279885 A JP 23279885A JP 23279885 A JP23279885 A JP 23279885A JP H0331674 B2 JPH0331674 B2 JP H0331674B2
- Authority
- JP
- Japan
- Prior art keywords
- molten metal
- crucible
- seed
- single crystal
- capacitance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23279885A JPS6296389A (ja) | 1985-10-18 | 1985-10-18 | 単結晶製造装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23279885A JPS6296389A (ja) | 1985-10-18 | 1985-10-18 | 単結晶製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6296389A JPS6296389A (ja) | 1987-05-02 |
JPH0331674B2 true JPH0331674B2 (enrdf_load_stackoverflow) | 1991-05-08 |
Family
ID=16944921
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23279885A Granted JPS6296389A (ja) | 1985-10-18 | 1985-10-18 | 単結晶製造装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6296389A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11162975B1 (en) | 2020-05-27 | 2021-11-02 | Shimadzu Corporation | Surface analyzer |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2533864Y2 (ja) * | 1994-04-28 | 1997-04-23 | 三菱マテリアル株式会社 | 単結晶引上装置 |
CN109610000B (zh) * | 2019-02-19 | 2020-12-15 | 博兴战新产业发展有限公司 | 一种热场供热稳定的单晶炉 |
CN113502533B (zh) * | 2021-09-09 | 2021-11-12 | 江苏矽时代材料科技有限公司 | 一种具有可控冷却装置的单晶硅直拉炉 |
-
1985
- 1985-10-18 JP JP23279885A patent/JPS6296389A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11162975B1 (en) | 2020-05-27 | 2021-11-02 | Shimadzu Corporation | Surface analyzer |
Also Published As
Publication number | Publication date |
---|---|
JPS6296389A (ja) | 1987-05-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4915775A (en) | Apparatus for adjusting initial position of melt surface | |
JP3528758B2 (ja) | 単結晶引き上げ装置 | |
KR20010080084A (ko) | 결정을 정확하게 인상하는 방법 및 장치 | |
JPH0331674B2 (enrdf_load_stackoverflow) | ||
EP0498653B1 (en) | A method for measuring the diameter of single crystal ingot | |
JPH0977588A (ja) | 浮遊帯域溶融法における晶出結晶径の自動制御方法およびその装置 | |
EP0425837B1 (en) | Method of adjusting concentration of oxygen in silicon single crystal and apparatus for use in the method | |
KR0182796B1 (ko) | 실리콘 단결정 잉곳 및 그 제조방법 | |
US5725660A (en) | Semiconductor single crystal growing apparatus | |
EP0288605B1 (en) | Method of and apparatus for controlling floating zone of semiconductor rod | |
US5888299A (en) | Apparatus for adjusting initial position of melt surface | |
JPH0331673B2 (enrdf_load_stackoverflow) | ||
JPH11228285A (ja) | 単結晶の製造方法及び装置 | |
JPH07277879A (ja) | Cz法による単結晶製造装置および融液レベル制御方法 | |
JP3592909B2 (ja) | 単結晶引上装置 | |
JPH0377157B2 (enrdf_load_stackoverflow) | ||
JPS61261288A (ja) | シリコン単結晶引上装置 | |
JPS6287482A (ja) | 単結晶製造装置 | |
JPS6283393A (ja) | 単結晶引上装置 | |
JP2843098B2 (ja) | 半導体単結晶引上装置 | |
JP3460483B2 (ja) | 融液面初期位置調整方法 | |
JP2975948B2 (ja) | 結晶育成方法 | |
JP2006044972A (ja) | シリコン単結晶製造装置及び製造方法並びにシリコン単結晶 | |
JP2821962B2 (ja) | 単結晶製造装置 | |
JP2001261484A (ja) | 単結晶引上げ機のギャップ検出方法及びそのギャップ調整装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |